JP7102271B2 - Semiconductor manufacturing equipment and manufacturing method of semiconductor equipment - Google Patents

Description

The present disclosure relates to semiconductor manufacturing equipment and is applicable to, for example, a die bonder including a camera that recognizes a die.

A part of the manufacturing process of a semiconductor device includes a process of mounting a semiconductor chip (hereinafter, simply referred to as a die) on a wiring board, a lead frame, etc. (hereinafter, simply referred to as a substrate) and assembling a package. Partly, there is a step of dividing a die from a semiconductor wafer (hereinafter, simply referred to as a wafer) (dying step) and a bonding step of mounting the divided die on a substrate. The semiconductor manufacturing equipment used in the bonding process is a die bonder.

A die bonder is a device that uses solder, gold plating, or resin as a bonding material to bond (mount and bond) a die onto a substrate or a die that has already been bonded. In a die bonder that bonds a die to the surface of a substrate, for example, the die is sucked from a wafer using a suction nozzle called a collet, picked up, transported onto the substrate, a pressing force is applied, and the bonding material is heated. By doing so, the operation (work) of performing bonding is repeated. The collet is a holder having suction holes, sucking air, and sucking and holding the die, and has the same size as the die.

In the dicing process, cracks extending inward from the cut surface may occur in the die due to cutting resistance during dicing.

JP-A-2017-117916

When an abnormality on the surface of the die is detected by imaging with a camera, it is difficult to judge from the captured image whether the abnormality is a crack or a foreign substance.
An object of the present disclosure is to provide a technique capable of distinguishing and recognizing foreign matter and cracks.
Other challenges and novel features will become apparent from the description and accompanying drawings herein.

The following is a brief overview of the representative ones of the present disclosure.
That is, the semiconductor manufacturing device includes an image pickup device that images a die, a first state in which the die is irradiated with light at an angle smaller than 45 degrees with respect to the optical axis of the image pickup device, and light at an angle larger than 45 degrees. A lighting device having a second state of irradiating the light, and a control device for controlling the image pickup device and the lighting device. The control device has a first image in which the lighting device is in the first state and the die is imaged by the imaging device, and a second image in which the lighting device is in the second state and the die is imaged by the imaging device. Based on the above, the abnormality on the die surface is recognized.

According to the above-mentioned semiconductor manufacturing apparatus, foreign matter and cracks can be recognized separately.

FIG. 1 is an image of an abnormality of the die. 2A and 2B are diagrams for explaining the principle of distinguishing between foreign matter and cracks in the embodiment, FIG. 2A is a diagram showing a state of high-angle illumination, and FIG. 2B is a diagram showing a state of low-angle illumination. 2 (C) is a diagram showing a captured image in a state of high-angle illumination, and FIG. 2 (D) is a diagram showing an captured image in a state of low-angle illumination. 3A and 3B are views for explaining a method of comparing the detected coordinates, FIG. 3A is a detection image by high-angle illumination, and FIG. 3B is a detection image by low-angle illumination. 4A and 4B are diagrams for explaining an image difference method, FIG. 4A is a detection image by high-angle illumination, FIG. 4B is a detection image by low-angle illumination, and FIG. 4C is a diagram. It is a difference image of the image of 4 (A) and the image of FIG. 4 (B). FIG. 5 is a flowchart of a surface inspection for distinguishing and recognizing foreign matter and cracks. FIG. 6 is a schematic top view showing a configuration example of the die bonder of the embodiment. FIG. 7 is a diagram illustrating a schematic configuration when viewed from the direction of arrow A in FIG. FIG. 8 is an external perspective view showing the configuration of the die supply portion of FIG. FIG. 9 is a schematic cross-sectional view showing a main portion of the die supply portion of FIG. FIG. 10 is a diagram showing the arrangement of the illumination device of the wafer recognition camera. FIG. 11 is a block diagram showing a schematic configuration of the control system of the die bonder of FIG. FIG. 12 is a flowchart illustrating a die bonding process in the die bonder of FIG.

Hereinafter, embodiments and examples will be described with reference to the drawings. However, in the following description, the same components may be designated by the same reference numerals and repeated description may be omitted. In addition, in order to clarify the explanation, the drawings may schematically represent the width, thickness, shape, etc. of each part as compared with the actual embodiment, but this is just an example, and the interpretation of the present invention is used. It is not limited.

First, the technique examined by the inventor of the present application will be described with reference to FIG. FIG. 1 is an image of an abnormality of the die.

When an abnormal AB on the die surface is detected by imaging with a camera, it is difficult to determine from the captured image whether the abnormal AB is a crack or a foreign substance. This is because both the fibrous foreign matter and the crack have a linear shape.

When designing a crack inspection function for images captured by a camera, the lighting configuration is a bright field method that "makes the background bright and makes what you want to see dark" and "makes the background dark and makes what you want to see bright". There is a dark field method.

In general, dark field is better when inspecting fine scratches. The surface of the die is close to a mirror surface, and oblique illumination is preferable for dark field inspection. The problem is determining the angle of incidence. In the case of cracks, it is easier to illuminate the cracks when the incident angle of oblique light illumination is as close as possible to the axis of the optical system (the incident angle is as close to 0 degrees as possible). On the other hand, foreign matter on the surface of the die can be made to shine relatively independently of the incident angle of illumination. In the embodiment, this property is utilized to distinguish between foreign matter and cracks.

Next, the principle of distinguishing between the foreign matter and the crack of the embodiment will be described with reference to FIG. 2A and 2B are diagrams for explaining the principle of distinguishing between foreign matter and cracks in the embodiment, FIG. 2A is a diagram showing a state of high-angle illumination, and FIG. 2B is a diagram showing a state of low-angle illumination. 2 (C) is a diagram showing a captured image in a state of high-angle illumination, and FIG. 2 (D) is a diagram showing an captured image in a state of low-angle illumination.

Here, the high angle means that the incident angle (θ) with respect to the optical axis is less than 45 degrees (θ <45 degrees), and the low angle means that the incident angle (θ) is more than 45 degrees (θ> 45 degrees).

As shown in FIGS. 2A and 2B, the camera CA and the optical system OS, which are image pickup devices, are arranged perpendicular to the surface of the die D. That is, the optical axis is perpendicular to the surface of the die D. The illumination LE irradiates the die D at a predetermined angle with respect to the optical axis.

As shown in FIG. 2 (A), when the illumination LE is set to a high angle (the incident angle (θ) is reduced), both the crack CR and the foreign matter FM shine as shown in FIG. 2 (C). As shown in FIG. 2 (B), when the illumination LE is set to a low angle (increasing the incident angle (θ)), only the foreign matter FM shines as shown in FIG. 2 (D).

Next, a method of separating the foreign matter portion and the crack portion will be described with reference to FIG. 3A and 3B are views for explaining a method of comparing the detected coordinates, FIG. 3A is a detection image by high-angle illumination, and FIG. 3B is a detection image by low-angle illumination.

As shown in FIG. 3A, foreign matter and cracks are detected in the detection image by high-angle illumination. As shown in FIG. 3B, only foreign matter is detected in the detection image by low-angle illumination. Since the illumination is different between high-angle illumination and low-angle illumination, the detection coordinates are not always the same. Therefore, in order to determine whether or not they are in the vicinity, the radius is set and it is determined whether they are the same. When the center coordinates of the abnormality C are within a predetermined radius of the center coordinates of the abnormality C'in FIG. 3B, the abnormality C and the abnormality C'are the same and are determined to be foreign substances. Abnormalities A and B are judged to be cracks.

Next, an image difference method, which is another method for separating the foreign matter portion and the crack portion, will be described with reference to FIG. 4A and 4B are diagrams for explaining an image difference method, FIG. 4A is a detection image by high-angle illumination, FIG. 4B is a detection image by low-angle illumination, and FIG. 4C is a diagram. It is a difference image of the image of 4 (A) and the image of FIG. 4 (B).

As shown in FIG. 4A, foreign matter and cracks are detected in the detection image by high-angle illumination. As shown in FIG. 4B, only foreign matter is detected in the detection image by low-angle illumination. An expansion process is performed on the abnormality C'in FIG. 4 (B), and a difference is performed from the image of the high-angle illumination shown in FIG. 4 (A). As shown in FIG. 4C, if there is a remaining portion, it is determined to be a crack. Therefore, the abnormalities A and B are judged to be cracks.

Next, the effect of the embodiment will be described. If this linear abnormality detected by the camera is a crack, it is a defective product regardless of its size. However, if it is a foreign substance, the target die is likely to be a good product, and in that case, it is possible to produce it as a good product by removing the foreign substance. By automatically distinguishing between them, it is not necessary to intervene an operator each time, and it is possible to automatically and efficiently perform foreign matter removal processing. This operation flow will be described with reference to FIG. FIG. 5 is a flowchart of a surface inspection for distinguishing and recognizing foreign matter and cracks.

The surface of the die D is imaged and inspected by the high-angle illumination of FIG. 2 (A) and the low-angle illumination of FIG. 2 (B) (step S1). It is determined whether or not there is an abnormality as shown in FIGS. 2C and 2D (step S2). If there is no abnormality (NO), the construction starts as it is (step S3). If there is an abnormality (YES), it is determined whether the abnormality is a foreign substance or a crack by comparing the coordinates in FIG. 3 or the image difference in FIG. 4 (step S4). In the case of a crack, the start of construction such as picking up the die having an abnormality is not performed, and the process is skipped to the next die or stopped because there is an error (step S5).

If it is a foreign substance, a foreign substance removal process such as air injection or suction is performed (step S6), and the surface of the die is re-inspected (step S7). If there is no abnormality (determined as a non-defective product), the construction starts as it is (step S8). If an abnormality is determined, it is determined whether the re-inspection (foreign matter removal process) has reached a predetermined number of times (step S9). If YES, the construction of the die with the abnormality is not started and the process is skipped to the next die or stopped because there is an error (step SA). If NO, the process returns to step S6.

If it can be determined whether it is a foreign substance or a crack, it becomes possible to incorporate the above algorithm, and the probability of skipping a non-defective product is reduced. In addition, it is not necessary to re-inspect defective products and remove foreign substances many times, which improves production efficiency. That is, if it is possible to determine whether a foreign substance or a crack is caused by an abnormality on the surface, a large number of non-defective products can be relieved, and the yield can be improved. Further, since it is possible to suppress the device stop due to the detection of product abnormality, it is possible to improve the MTBF (Mean Time Between Failures) of the device.

When an abnormality on the die surface is detected by imaging with a camera, it is difficult to judge from the captured image whether the abnormality is a scratch or a foreign substance, and the abnormality on the substrate surface is detected by imaging with a camera. At that time, it is difficult to judge from the captured image whether the abnormality is a scratch or a foreign substance. In the embodiment, foreign matter and cracks on the die surface are recognized separately, but the present invention is not limited to the die surface, and for example, foreign matter and scratches on the substrate or lead frame to which the die is bonded are recognized separately. Alternatively, foreign matter and scratches on the surface of the die may be recognized separately.

FIG. 6 is a schematic top view showing the configuration of the die bonder of the embodiment. FIG. 7 is a diagram illustrating a schematic configuration when viewed from the direction of arrow A in FIG.

The die bonder 10 is roughly divided into a die supply unit 1 for supplying a die D for mounting a product area (hereinafter, referred to as a package area P) which is one or a plurality of final packages on a printed circuit board S, and a pickup unit 2. , An intermediate stage unit 3, a bonding unit 4, a transport unit 5, a substrate supply unit 6, a substrate carry-out unit 7, and a control unit 8 that monitors and controls the operation of each unit. The Y-axis direction is the front-rear direction of the die bonder 10, and the X-axis direction is the left-right direction. The die supply unit 1 is arranged on the front side of the die bonder 10, and the bonding unit 4 is arranged on the back side.

First, the die supply unit 1 supplies the die D to be mounted in the package area P of the substrate S. The die supply unit 1 includes a wafer holding table 12 for holding the wafer 11, and a pushing unit 13 indicated by a dotted line for pushing the die D from the wafer 11. The die supply unit 1 is moved in the XY direction by a driving means (not shown), and the die D to be picked up is moved to the position of the push-up unit 13.

The pickup unit 2 includes a pickup head 21 that picks up the die D, a Y drive unit 23 of the pickup head that moves the pickup head 21 in the Y direction, and each drive unit (not shown) that moves the collet 22 up / down, rotates, and moves in the X direction. , Have. The pickup head 21 has a collet 22 (see also FIG. 7) that attracts and holds the pushed-up die D to the tip, picks up the die D from the die supply unit 1, and places it on the intermediate stage 31. The pickup head 21 has drive units (not shown) that move the collet 22 up / down, rotate, and move in the X direction.

The intermediate stage unit 3 has an intermediate stage 31 on which the die D is temporarily placed, and a stage recognition camera 32 for recognizing the die D on the intermediate stage 31.

The bonding portion 4 picks up the die D from the intermediate stage 31 and bonds it on the package area P of the substrate S to be conveyed, or laminates it on the die already bonded on the package area P of the substrate S. Bond in shape. The bonding unit 4 includes a bonding head 41 having a collet 42 (see also FIG. 7) that attracts and holds the die D to the tip like the pickup head 21, a Y drive unit 43 that moves the bonding head 41 in the Y direction, and a substrate. It has a substrate recognition camera 44 that captures a position recognition mark (not shown) of the package area P of S and recognizes the bonding position.
With such a configuration, the bonding head 41 corrects the pickup position / orientation based on the image data of the stage recognition camera 32, picks up the die D from the intermediate stage 31, and bases the board based on the image data of the board recognition camera 44. Bond the die D to.

The transport unit 5 has a substrate transport claw 51 that grips and transports the substrate S, and a transport lane 52 to which the substrate S moves. The substrate S moves by driving a nut (not shown) of the substrate transport claw 51 provided in the transport lane 52 with a ball screw (not shown) provided along the transport lane 52.
With such a configuration, the substrate S moves from the substrate supply unit 6 to the bonding position along the transfer lane 52, and after bonding, moves to the substrate unloading unit 7 and passes the substrate S to the substrate unloading unit 7.

The control unit 8 includes a memory for storing a program (software) for monitoring and controlling the operation of each unit of the die bonder 10, and a central processing unit (CPU) for executing the program stored in the memory.

Next, the configuration of the die supply unit 1 will be described with reference to FIGS. 8 and 9. FIG. 8 is an external perspective view showing the configuration of the die supply portion of FIG. FIG. 9 is a schematic cross-sectional view showing a main portion of the die supply portion of FIG.

The die supply unit 1 includes a wafer holding table 12 that moves in the horizontal direction (XY direction) and a push-up unit 13 that moves in the vertical direction. The wafer holding table 12 has an expanding ring 15 for holding the wafer ring 14 and a support ring 17 for horizontally positioning the dicing tape 16 held on the wafer ring 14 and to which a plurality of dies D are adhered. The push-up unit 13 is arranged inside the support ring 17.

The die supply unit 1 lowers the expanding ring 15 holding the wafer ring 14 when the die D is pushed up. As a result, the dicing tape 16 held by the wafer ring 14 is stretched to widen the interval between the dies D, and the push-up unit 13 pushes up the die D from below the die D to improve the pick-up property of the die D. The adhesive that adheres the die to the substrate as it becomes thinner changes from a liquid to a film, and a film-like adhesive material called a die attach film (DAF) 18 is attached between the wafer 11 and the dicing tape 16. There is. In the wafer 11 having the die attach film 18, dicing is performed on the wafer 11 and the die attach film 18. Therefore, in the peeling step, the wafer 11 and the die attach film 18 are peeled from the dicing tape 16. In the following, the description will be made ignoring the existence of the die attach film 18.

The die bonder 10 has a wafer recognition camera 24 that recognizes the posture of the die D on the wafer 11, a stage recognition camera 32 that recognizes the posture of the die D mounted on the intermediate stage 31, and a mounting position on the bonding stage BS. It has a board recognition camera 44 for recognizing. It is the stage recognition camera 32 involved in the pickup by the bonding head 41 and the substrate recognition camera 44 involved in bonding to the mounting position by the bonding head 41 that must correct the posture deviation between the recognition cameras. In this embodiment, the surface of the die D is inspected by using the illumination device described later together with the wafer recognition camera 24, the stage recognition camera 32, and the substrate recognition camera 44.

Next, the lighting for surface inspection will be described with reference to FIG. FIG. 10 is a diagram showing the arrangement of the illumination device of the wafer recognition camera.

The wafer recognition camera 24 is arranged perpendicular to the surface of the wafer 11 (die D). That is, the optical axis is perpendicular to the surface of the wafer 11 (die D). The illuminations LE1 and LE2 are oblique illuminations, and irradiate the wafer 11 (die D) at a predetermined angle with respect to the optical axis.

The illumination LE1 is oblique illumination, corresponds to the high-angle illumination of the embodiment, and the incident angle (θ1) is preferably 5 to 15 degrees. The control unit 8 can control the lighting LE1 to be turned on and off. In the case of high-angle lighting, the lighting LE1 is turned on, and in the case of low-angle lighting, the lighting LE1 is turned off. As a result, both the crack CR and the foreign matter FM shine, as in FIG. 2C.

The illumination LE2 is oblique illumination, corresponds to the low-angle illumination of the embodiment, and the incident angle (θ2) is preferably 75 to 85 degrees. The control unit 8 can control the lighting LE2 to be turned on and off. In the case of high-angle lighting, the lighting LE2 is turned off, and in the case of low-angle lighting, the lighting LE2 is turned on. As a result, only the foreign matter FM shines as in FIG. 2 (D).

The lighting devices of the stage recognition camera 32 and the substrate recognition camera 44 are the same as the lighting devices of the wafer recognition camera 24.

Next, the control unit 8 will be described with reference to FIG. FIG. 11 is a block diagram showing a schematic configuration of the control system of the die bonder of FIG. The control system 80 includes a control unit 8, a drive unit 86, a signal unit 87, and an optical system 88. The control unit 8 is roughly divided into a control / arithmetic unit 81 mainly composed of a CPU (Central Processor Unit), a storage device 82, an input / output device 83, a bus line 84, and a power supply unit 85. The storage device 82 is an auxiliary device composed of a main storage device 82a composed of a RAM for storing a processing program and the like, and an HDD, an SSD or the like for storing control data, image data and the like necessary for control. It has a storage device 82b. The input / output device 83 includes a monitor 83a for displaying the device status and information, a touch panel 83b for inputting operator instructions, a mouse 83c for operating the monitor, and an image capture device 83d for capturing image data from the optical system 88. And have. Further, the input / output device 83 includes a motor control device 83e that controls a drive unit 86 such as an XY table (not shown) of the die supply unit 1 and a ZZ drive shaft of a bonding head table, various sensor signals, lighting devices, and the like. It has an I / O signal control device 83f that captures or controls a signal from a signal unit 87 such as a switch of the above. The optical system 88 includes a wafer recognition camera 24, a stage recognition camera 32, and a substrate recognition camera 44. The control / arithmetic unit 81 takes in necessary data via the bus line 84, calculates the data, controls the pickup head 21 and the like, and sends the information to the monitor 83a and the like.

The control unit 8 stores the image data captured by the wafer recognition camera 24, the stage recognition camera 32, and the substrate recognition camera 44 in the storage device 82 via the image acquisition device 83d. Using the software programmed based on the stored image data, the control / arithmetic unit 81 is used to position the package area P of the die D and the substrate S, and to inspect the surface of the die D and the substrate S. Based on the positions of the die D and the package area P of the substrate S calculated by the control / arithmetic unit 81, the drive unit 86 is moved by software via the motor control device 83e. By this process, the die on the wafer is positioned and operated by the drive unit of the pickup unit 2 and the bonding unit 4 to bond the die D onto the package area P of the substrate S. The wafer recognition camera 24, the stage recognition camera 32, and the substrate recognition camera 44 to be used are grayscale, color, or the like, and the light intensity is quantified.

Next, FIG. 12 is a flowchart illustrating a die bonding process in the die bonder of FIG.
In the die bonding step of the embodiment, first, the control unit 8 takes out the wafer ring 14 holding the wafer 11 from the wafer cassette and places it on the wafer holding table 12, and the wafer holding table 12 is picked up by the die D. It is conveyed to the reference position where it is performed (wafer loading (step P1)). Next, the control unit 8 makes fine adjustments so that the arrangement position of the wafer 11 exactly matches the reference position from the image acquired by the wafer recognition camera 24.

Next, the control unit 8 arranges the first die D to be picked up at the pickup position by moving the wafer holding table 12 on which the wafer 11 is placed at a predetermined pitch and holding it horizontally (die transfer). (Step P2)). The wafer 11 is inspected in advance for each die by an inspection device such as a prober, and map data indicating good or bad is generated for each die and stored in the storage device 82 of the control unit 8. Whether the die D to be picked up is a non-defective product or a defective product is determined by the map data. When the die D is a defective product, the control unit 8 moves the wafer holding table 12 on which the wafer 11 is placed at a predetermined pitch, arranges the die D to be picked up next at the pickup position, and arranges the defective product. Die D is skipped.

The control unit 8 photographs the main surface (upper surface) of the die D to be picked up by the wafer recognition camera 24, and calculates the amount of misalignment of the die D to be picked up from the pickup position from the acquired image. The control unit 8 moves the wafer holding table 12 on which the wafer 11 is placed based on this amount of misalignment, and accurately arranges the die D to be picked up at the pickup position (die positioning (step P3)).

Next, the control unit 8 inspects the surface of the die D from the image acquired by the wafer recognition camera 24 (step P4). The control unit 8 performs the processes of steps S1 to SA of FIG. Here, if the control unit 8 determines that there is no problem on the surface of the die D, the process proceeds to the next step (step P9 described later), but if it determines that there is a problem, the control unit 8 skips or stops with an error. In the skip process, steps P9 and subsequent steps of the die D are skipped, the wafer holding table 12 on which the wafer 11 is placed is moved by a predetermined pitch, and the die D to be picked up next is arranged at the pickup position.

The control unit 8 is placed on the substrate S transport lane 52 by the substrate supply unit 6 (board loading (process P5)). The control unit 8 moves the substrate transfer claw 51 that grabs and conveys the substrate S to the bonding position (board transfer (process P6)).

The board is imaged by the board recognition camera 44 and positioned (board positioning (process P7)).

Next, the control unit 8 inspects the surface of the package area P of the substrate S from the image acquired by the substrate recognition camera 44 (step P8). Here, the control unit 8 determines whether or not there is a problem in the surface inspection, and if it is determined that there is no problem in the surface of the package area P of the substrate S, the process proceeds to the next step (step P9 described later), but there is a problem. If it is determined to be present, the surface image is visually confirmed, or a high-sensitivity inspection or an inspection with different lighting conditions is performed. If there is a problem, skip processing is performed, and if there is no problem, the next process is performed. Perform processing. In the skip process, steps P10 and subsequent steps to the corresponding tab in the package area P of the substrate S are skipped, and defects are registered in the substrate construction start information.

The control unit 8 accurately arranges the die D to be picked up at the pickup position by the die supply unit 1, and then picks up the die D from the dicing tape 16 by the pickup head 21 including the collet 22 (die handling (step P9)). , Placed on the intermediate stage 31 (step P10). The control unit 8 detects the posture deviation (rotational deviation) of the die placed on the intermediate stage 31 with the stage recognition camera 32 (die position inspection (step P11)). When there is a posture deviation, the control unit 8 rotates the intermediate stage 31 on a surface parallel to the mounting surface having the mounting position by a turning drive device (not shown) provided on the intermediate stage 31 to correct the posture deviation.

The control unit 8 inspects the surface of the die D from the image acquired by the stage recognition camera 32 (step P12). The control unit 8 performs the processes of steps S1 to SA of FIG. Here, if the control unit 8 determines that there is no problem on the surface of the die D, the process proceeds to the next step (step P13 described later), but if it determines that there is a problem, the control unit 8 skips or stops with an error. In the skip process, the die is placed on a defective tray (not shown), the steps P13 and subsequent steps of the die D are skipped, the wafer holding table 12 on which the wafer 11 is placed is moved by a predetermined pitch, and then the die is moved at a predetermined pitch. The die D to be picked up is placed at the pick-up position.

The control unit 8 picks up the die D from the intermediate stage 31 by the bonding head 41 including the collet 42, and die-bonds the die D to the package area P of the substrate S or the die already bonded to the package area P of the substrate S (diatouch). (Step P13)).

After bonding the die D, the control unit 8 inspects whether the bonding position is accurate (relative position inspection between the die and the substrate (step P14)). At this time, the center of the die and the center of the tab are obtained in the same manner as the alignment of the die described later, and it is inspected whether the relative position is correct.

Next, the control unit 8 inspects the surfaces of the die D and the substrate S from the image acquired by the substrate recognition camera 44 (step P15). The control unit 8 performs the processes of steps S1 to SA of FIG. Here, if the control unit 8 determines that there is no problem on the surface of the die D, the process proceeds to the next step (step P9 described later), but if it determines that there is a problem, the control unit 8 skips or stops with an error. In the skip process, defects are registered in the board construction start information.

After that, the dies D are bonded to the package area P of the substrate S one by one according to the same procedure. When the bonding of one substrate is completed, the substrate S is moved to the substrate unloading portion 7 by the substrate transport claw 51 (board transport (process P16)), and the substrate S is passed to the substrate unloading portion 7 (board unloading (process P17). )).

After that, the dies D are peeled off from the dicing tape 16 one by one according to the same procedure (step P9). When the pickup of all the dies D except the defective products is completed, the dicing tape 16 and the wafer ring 14 and the like holding the dies D in the outer shape of the wafer 11 are unloaded to the wafer cassette (step P18).

The surface inspection of the crack may be performed at at least one place of the die supply part, the intermediate stage, and the bonding stage where the die position recognition is performed, but it is more preferable to perform the surface inspection at all the places. If it is done in the die supply section, cracks can be detected quickly. If the intermediate stage is performed, cracks that could not be detected in the die supply unit or cracks that occurred after the pick-up process (cracks that did not become apparent before the bonding process) can be detected before bonding. Further, if the bonding stage is performed, cracks that could not be detected in the die supply section and the intermediate stage (cracks that did not become apparent before the bonding process) or cracks generated after the bonding process are bonded by laminating the next die. It can be detected before or before the substrate is ejected.

The invention made by the present inventor has been specifically described above based on the embodiments and examples, but the present invention is not limited to the above examples and modifications, and can be variously modified. Not to mention.

For example, in the embodiment, it has been described that two oblique lighting for high-angle illumination and oblique illumination for low-angle illumination are provided, but one oblique illumination may be moved to provide high-angle illumination and low-angle illumination.
Further, coaxial illumination may be used for high-angle illumination, and oblique illumination may be used for low-angle illumination.

Further, in the embodiment, the die appearance inspection recognition is performed after the die position recognition, but the die position recognition may be performed after the die appearance inspection recognition.

Further, in the embodiment, the DAF is attached to the back surface of the wafer, but the DAF may not be present.

Further, in the embodiment, one pickup head and one bonding head are provided, but two or more of each may be provided. Further, although the intermediate stage is provided in the embodiment, the intermediate stage may not be provided. In this case, the pickup head and the bonding head may be used in combination.

Further, in the embodiment, the die is bonded with the front surface facing up, but after picking up the die, the front and back surfaces of the die may be inverted and the die may be bonded with the back surface facing up. In this case, the intermediate stage may not be provided. This device is called a flip chip bonder.

Further, although the bonding head is provided in the embodiment, the bonding head may not be provided. In this case, the picked-up die is placed in a container or the like. This device is called a pickup device.

10 ... Die bonder 1 ... Die supply unit 13 ... Push-up unit 2 ... Pickup unit 24 ... Wafer recognition camera 3 ... Alignment unit 31 ... Intermediate stage 32 ... Stage recognition Camera 4 ・ ・ ・ Bonding part 41 ・ ・ ・ Bonding head 42 ・ ・ ・ Collet 44 ・ ・ ・ Board recognition camera 5 ・ ・ ・ Transfer part 51 ・ ・ ・ Board transfer claw 8 ・ ・ ・ Control part S ・ ・ ・ Board BS・ ・ ・ Bonding stage D ・ ・ ・ Die P ・ ・ ・ Package area CA ・ ・ ・ Camera LE ・ ・ ・ Lighting OS ・ ・ ・ Optical system

Claims (17)

An imaging device that captures the die and
A lighting device having a first state in which the die is irradiated with light at an angle smaller than 45 degrees with respect to the optical axis of the imaging device and a second state in which the die is irradiated with light at an angle larger than 45 degrees.
A control device that controls the image pickup device and the lighting device,
With
The control device
Based on the first image in which the lighting device is in the first state and the die is imaged by the imaging device and the second image in which the lighting device is in the second state and the die is imaged by the imaging device. Recognizing the abnormality on the surface of the die ,
A semiconductor manufacturing apparatus configured to treat an abnormality recognized in the second image as a foreign substance and to recognize an abnormality recognized in the first image excluding the abnormality recognized in the second image as a crack . In the semiconductor manufacturing apparatus of claim 1,
The lighting device includes a first oblique light illumination and a second oblique light illumination.
The control device is
By turning on the first oblique light illumination and turning off the second oblique light illumination, the illuminating device is put into the first state.
A semiconductor manufacturing device that puts the lighting device into the second state by turning off the first oblique light illumination and turning on the second oblique light illumination. In the semiconductor manufacturing apparatus of claim 1,
The lighting device is one type of lighting.
The control device is a semiconductor manufacturing device configured to bring the lighting device into the first state and the second state by moving the lighting device. In the semiconductor manufacturing apparatus of claim 1 ,
The control device is a semiconductor manufacturing device configured to determine the abnormal portion as a foreign substance when the center coordinates of the abnormal portion of the first image are within a predetermined radius of the center coordinates of the abnormal portion of the second image. In the semiconductor manufacturing apparatus of claim 1 ,
The control device is a semiconductor manufacturing device configured to expand an abnormal portion of the second image, perform a difference process from the first image, and determine the remaining portion as a crack. In the semiconductor manufacturing apparatus of claim 1, further
A die supply unit having a wafer ring holder for holding the dicing tape to which the die is attached is provided.
The control device is a semiconductor manufacturing device configured to image the die attached to the dicing tape by using the image pickup device and the lighting device. In the semiconductor manufacturing apparatus of claim 1, further
A bonding head for bonding the die onto a substrate or a die that has already been bonded is provided.
The control device is a semiconductor manufacturing device configured to image a die bonded onto the substrate or die by using the image pickup device and the illumination device. In the semiconductor manufacturing apparatus of claim 1, further
A pickup head that picks up the die and
The intermediate stage on which the picked-up die is placed and
With
The control device is a semiconductor manufacturing device configured to image a die mounted on the intermediate stage by using the image pickup device and the lighting device. In the semiconductor manufacturing apparatus of claim 3,
In addition, it is equipped with a foreign matter removal device that blows or sucks air.
A semiconductor manufacturing device configured to remove the foreign matter by the foreign matter removing device when the control device determines that the abnormality is the foreign matter. (A) The step of preparing the semiconductor manufacturing apparatus according to any one of claims 1 to 5.
(B) The process of carrying in the wafer ring holder that holds the dicing tape to which the die is attached, and
(C) The process of bringing in the substrate and
(D) The process of picking up the die and
(E) A step of bonding the picked-up die onto the substrate or a die that has already been bonded to the substrate.
A method for manufacturing a semiconductor device including. In the method for manufacturing a semiconductor device according to claim 10,
In step (d), the picked-up die is placed on an intermediate stage, and the picked-up die is placed on an intermediate stage.
The step (e) is a method for manufacturing a semiconductor device that picks up a die mounted on the intermediate stage. In the method for manufacturing a semiconductor device according to claim 10, further
(G) A method for manufacturing a semiconductor device, which comprises a step of inspecting the surface of the die using the imaging device and the lighting device before the step (d). In the method for manufacturing a semiconductor device according to claim 10, further
(H) A method for manufacturing a semiconductor device, which comprises a step of performing a surface inspection of the die using the imaging device and the lighting device after the step (e). In the method for manufacturing a semiconductor device according to claim 11, further
(I) A method for manufacturing a semiconductor device, which comprises a step of inspecting the surface of the die using the imaging device and the lighting device after the step (d) and before the step (e). In the method for manufacturing a semiconductor device according to claim 12,
The step (g) is
(G1) A step of determining whether or not there is an abnormality on the surface of the die, and
(G2) When there is an abnormality on the surface of the die, a step of determining whether the abnormality is a foreign substance or a crack, and
(G3) When the abnormality is the crack, a step of performing skip processing or error stop processing and
(G4) When the abnormality is the foreign matter, the step of performing the foreign matter removal process and
A method for manufacturing a semiconductor device including. In the method for manufacturing a semiconductor device according to claim 13,
The step (h) is
(H1) A step of determining whether or not there is an abnormality on the surface of the die, and
(H2) When there is an abnormality on the surface of the die, a step of determining whether the abnormality is a foreign substance or a crack, and
(H3) When the abnormality is the crack, a step of performing a skip process or an error stop process and
(H4) When the abnormality is the foreign matter, the step of performing the foreign matter removal process and
A method for manufacturing a semiconductor device including. In the method for manufacturing a semiconductor device according to claim 14,
The step (i) is
(I1) A step of determining whether or not there is an abnormality on the surface of the die, and
(I2) When there is an abnormality on the surface of the die, a step of determining whether the abnormality is a foreign substance or a crack, and
(I3) When the abnormality is the crack, a step of performing a skip process or an error stop process and
(I4) When the abnormality is the foreign matter, the step of performing the foreign matter removal process and
A method for manufacturing a semiconductor device including.

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