KR102471102B1 - 분포 브래그 반사기를 가지는 발광 다이오드 칩 - Google Patents

분포 브래그 반사기를 가지는 발광 다이오드 칩 Download PDF

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KR102471102B1
KR102471102B1 KR1020150148036A KR20150148036A KR102471102B1 KR 102471102 B1 KR102471102 B1 KR 102471102B1 KR 1020150148036 A KR1020150148036 A KR 1020150148036A KR 20150148036 A KR20150148036 A KR 20150148036A KR 102471102 B1 KR102471102 B1 KR 102471102B1
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material layers
optical thickness
region
light emitting
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KR20170047664A (ko
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김예슬
우상원
김경완
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서울바이오시스 주식회사
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Priority to KR1020150148036A priority Critical patent/KR102471102B1/ko
Priority to US15/767,284 priority patent/US10804437B2/en
Priority to EP16857630.4A priority patent/EP3353821B1/en
Priority to PCT/KR2016/006428 priority patent/WO2017069372A1/en
Priority to TW105121835A priority patent/TWI613839B/zh
Priority to TW106139078A priority patent/TWI665810B/zh
Priority to CN201610670509.6A priority patent/CN106611811B/zh
Priority to JP2016162217A priority patent/JP6275788B2/ja
Publication of KR20170047664A publication Critical patent/KR20170047664A/ko
Priority to JP2018002039A priority patent/JP6831801B2/ja
Priority to US17/016,371 priority patent/US12471416B2/en
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Publication of KR102471102B1 publication Critical patent/KR102471102B1/ko
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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/84Coatings, e.g. passivation layers or antireflective coatings
    • H10H20/841Reflective coatings, e.g. dielectric Bragg reflectors
    • H01L33/46
    • H01L33/50
    • H01L33/58
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24Coupling light guides
    • G02B6/26Optical coupling means
    • G02B6/28Optical coupling means having data bus means, i.e. plural waveguides interconnected and providing an inherently bidirectional system by mixing and splitting signals
    • G02B6/293Optical coupling means having data bus means, i.e. plural waveguides interconnected and providing an inherently bidirectional system by mixing and splitting signals with wavelength selective means
    • G02B6/29379Optical coupling means having data bus means, i.e. plural waveguides interconnected and providing an inherently bidirectional system by mixing and splitting signals with wavelength selective means characterised by the function or use of the complete device
    • G02B6/29392Controlling dispersion
    • G02B6/29394Compensating wavelength dispersion
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/12Passive devices, e.g. 2 terminal devices
    • H01L2924/1204Optical Diode
    • H01L2924/12041LED
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/85Packages
    • H10H20/851Wavelength conversion means

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  • Led Devices (AREA)
  • Led Device Packages (AREA)
  • Planar Illumination Modules (AREA)
KR1020150148036A 2015-10-23 2015-10-23 분포 브래그 반사기를 가지는 발광 다이오드 칩 Active KR102471102B1 (ko)

Priority Applications (10)

Application Number Priority Date Filing Date Title
KR1020150148036A KR102471102B1 (ko) 2015-10-23 2015-10-23 분포 브래그 반사기를 가지는 발광 다이오드 칩
US15/767,284 US10804437B2 (en) 2015-10-23 2016-06-17 Light emitting diode chip having distributed Bragg reflector
EP16857630.4A EP3353821B1 (en) 2015-10-23 2016-06-17 Light emitting diode chip having distributed bragg reflector
PCT/KR2016/006428 WO2017069372A1 (en) 2015-10-23 2016-06-17 Light emitting diode chip having distributed bragg reflector
TW106139078A TWI665810B (zh) 2015-10-23 2016-07-12 具有分布式布拉格反射器的發光二極體晶片
TW105121835A TWI613839B (zh) 2015-10-23 2016-07-12 具有分布式布拉格反射器的發光二極體晶片
CN201610670509.6A CN106611811B (zh) 2015-10-23 2016-08-15 具有分布式布拉格反射器的发光二极管芯片
JP2016162217A JP6275788B2 (ja) 2015-10-23 2016-08-22 分布ブラッグ反射器を有する発光ダイオードチップ
JP2018002039A JP6831801B2 (ja) 2015-10-23 2018-01-10 分布ブラッグ反射器を有する発光ダイオードチップ
US17/016,371 US12471416B2 (en) 2015-10-23 2020-09-10 Light emitting diode chip having distributed bragg reflector

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020150148036A KR102471102B1 (ko) 2015-10-23 2015-10-23 분포 브래그 반사기를 가지는 발광 다이오드 칩

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KR20170047664A KR20170047664A (ko) 2017-05-08
KR102471102B1 true KR102471102B1 (ko) 2022-11-25

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US (2) US10804437B2 (enExample)
EP (1) EP3353821B1 (enExample)
JP (2) JP6275788B2 (enExample)
KR (1) KR102471102B1 (enExample)
CN (1) CN106611811B (enExample)
TW (2) TWI613839B (enExample)
WO (1) WO2017069372A1 (enExample)

Families Citing this family (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102471102B1 (ko) * 2015-10-23 2022-11-25 서울바이오시스 주식회사 분포 브래그 반사기를 가지는 발광 다이오드 칩
CN109285929B (zh) 2017-07-21 2023-09-08 日亚化学工业株式会社 发光装置、集成型发光装置以及发光模块
JP7082273B2 (ja) 2017-07-21 2022-06-08 日亜化学工業株式会社 発光装置、集積型発光装置および発光モジュール
KR20190022326A (ko) * 2017-08-24 2019-03-06 서울바이오시스 주식회사 분포 브래그 반사기를 가지는 발광 다이오드
CN108134005B (zh) * 2017-12-13 2023-12-22 华灿光电(浙江)有限公司 一种发光二极管芯片及其制备方法
US20190237629A1 (en) 2018-01-26 2019-08-01 Lumileds Llc Optically transparent adhesion layer to connect noble metals to oxides
CN108172673B (zh) * 2018-01-31 2023-10-13 江苏新广联科技股份有限公司 用于led倒装芯片的分布式布拉格反射镜图形的制作方法和结构
US10340480B1 (en) 2018-03-01 2019-07-02 Avalon Holographics Inc. OLED microcavity design and optimization method
DE102018107667A1 (de) 2018-03-15 2019-09-19 Osram Opto Semiconductors Gmbh Optoelektronischer halbleiterchip
US11799058B2 (en) * 2018-03-15 2023-10-24 Osram Oled Gmbh Optoelectronic semiconductor chip
CN108447955B (zh) * 2018-03-16 2019-07-23 厦门市三安光电科技有限公司 发光二极管芯片结构及其制作方法
KR102496316B1 (ko) * 2018-05-30 2023-02-07 서울바이오시스 주식회사 분포 브래그 반사기를 가지는 발광 다이오드 칩
US11469349B2 (en) * 2018-07-17 2022-10-11 Xiamen Changelight Co., Ltd. Semiconductor chip of light emitting diode and manufacturing method thereof
KR102624112B1 (ko) 2018-10-23 2024-01-12 서울바이오시스 주식회사 플립칩형 발광 다이오드 칩
KR102610626B1 (ko) * 2019-01-31 2023-12-07 서울바이오시스 주식회사 솔더 범프를 갖는 발광 다이오드
KR102632226B1 (ko) * 2019-01-31 2024-02-02 서울바이오시스 주식회사 분포 브래그 반사기를 갖는 발광 다이오드
BR112021015173A2 (pt) 2019-01-31 2021-09-28 Seoul Viosys Co., Ltd. Diodo emissor de luz e dispositivo emissor de luz
JP6811293B1 (ja) * 2019-08-21 2021-01-13 日機装株式会社 半導体発光素子および半導体発光素子の製造方法
DE102019122593A1 (de) * 2019-08-22 2021-02-25 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronischer Halbleiterchip
JP2021114594A (ja) * 2019-08-27 2021-08-05 株式会社東芝 光半導体素子
KR102745348B1 (ko) * 2019-09-23 2024-12-23 삼성전자주식회사 광 변조 소자, 이를 포함하는 빔 스티어링 장치 및 빔 스티어링 장치를 포함하는 전자 장치
CN111146321B (zh) * 2020-02-17 2024-06-25 佛山市国星半导体技术有限公司 一种具有dbr绝缘保护的出光均匀led芯片及其制作方法
US12243966B2 (en) * 2020-06-24 2025-03-04 Epistar Corporation Light-emitting device
TWI846125B (zh) * 2020-09-16 2024-06-21 晶元光電股份有限公司 具有布拉格反射結構的半導體發光元件
TWI785383B (zh) * 2020-09-16 2022-12-01 晶元光電股份有限公司 具有布拉格反射結構的半導體發光元件
WO2022104651A1 (zh) * 2020-11-19 2022-05-27 厦门三安光电有限公司 Dbr 结构、 led 芯片、半导体发光器件及制造方法及显示面板
US12136610B2 (en) * 2020-11-30 2024-11-05 Seoul Viosys Co., Ltd. Unit pixel and displaying apparatus including the unit pixel
US12062737B2 (en) 2020-12-17 2024-08-13 Samsung Electronics Co., Ltd. LED chip and display apparatus including the same
CN112909139A (zh) * 2021-02-01 2021-06-04 扬州乾照光电有限公司 一种基于dbr结构的led芯片及其制备方法
TWI792283B (zh) 2021-04-27 2023-02-11 錼創顯示科技股份有限公司 微型發光二極體結構與使用其的微型發光二極體顯示面板
CN113193090B (zh) * 2021-04-27 2023-06-06 錼创显示科技股份有限公司 微型发光二极管结构与使用其的微型发光二极管显示面板
CN113471342B (zh) * 2021-06-30 2022-12-02 厦门士兰明镓化合物半导体有限公司 Led外延结构以及led芯片
US20250169243A1 (en) * 2023-11-21 2025-05-22 Lumileds Llc Led with transparent conductive structure
CN119300576B (zh) * 2024-09-30 2025-11-25 湖北三安光电有限公司 Dbr结构、发光二极管及发光装置

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20120161176A1 (en) 2010-12-24 2012-06-28 Seoul Opto Device Co., Ltd. Light emitting diode chip and method of fabricating the same
KR101289442B1 (ko) 2012-03-02 2013-07-24 일진엘이디(주) 분포 브래그 반사기를 포함하는 질화물 반도체 발광소자 및 그 제조 방법

Family Cites Families (38)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3439063B2 (ja) * 1997-03-24 2003-08-25 三洋電機株式会社 半導体発光素子および発光ランプ
US5999321A (en) * 1998-06-19 1999-12-07 Philips Electronics North America Corporation Dichroic filters with low nm per degree sensitivity
US6720585B1 (en) * 2001-01-16 2004-04-13 Optical Communication Products, Inc. Low thermal impedance DBR for optoelectronic devices
US20020163952A1 (en) * 2001-03-01 2002-11-07 Wen-Yen Hwang VCSEL with single lasing-reflectivity peak reflector
US7067849B2 (en) 2001-07-17 2006-06-27 Lg Electronics Inc. Diode having high brightness and method thereof
JP2003270432A (ja) * 2002-03-13 2003-09-25 Shin Etsu Handotai Co Ltd 可視光反射部材
JP3795007B2 (ja) * 2002-11-27 2006-07-12 松下電器産業株式会社 半導体発光素子及びその製造方法
JP2008211164A (ja) * 2007-01-29 2008-09-11 Matsushita Electric Ind Co Ltd 窒化物半導体発光装置及びその製造方法
JP4851953B2 (ja) 2007-02-07 2012-01-11 株式会社日立製作所 光学部材
JP5634003B2 (ja) 2007-09-29 2014-12-03 日亜化学工業株式会社 発光装置
US8575633B2 (en) * 2008-12-08 2013-11-05 Cree, Inc. Light emitting diode with improved light extraction
KR101292390B1 (ko) * 2008-05-02 2013-08-01 가부시키가이샤 리코 수직 공진기형 면발광 레이저 소자, 수직 공진기형 면발광 레이저 어레이, 광 주사 장치 및 화상 형성 장치
CN102124405B (zh) * 2008-05-30 2015-08-26 欧帕鲁克斯有限公司 可调布拉格堆叠
KR20110053064A (ko) * 2009-11-13 2011-05-19 서울옵토디바이스주식회사 분포 브래그 반사기를 갖는 발광 다이오드 칩 및 발광 다이오드 패키지
US8963178B2 (en) * 2009-11-13 2015-02-24 Seoul Viosys Co., Ltd. Light emitting diode chip having distributed bragg reflector and method of fabricating the same
JP5855344B2 (ja) 2010-02-12 2016-02-09 ソウル バイオシス カンパニー リミテッドSeoul Viosys Co.,Ltd. 分布ブラッグ反射器を有する発光ダイオードチップ及びその製造方法
US8772805B2 (en) * 2010-03-31 2014-07-08 Seoul Viosys Co., Ltd. High efficiency light emitting diode and method for fabricating the same
WO2011145794A1 (ko) * 2010-05-18 2011-11-24 서울반도체 주식회사 파장변환층을 갖는 발광 다이오드 칩과 그 제조 방법, 및 그것을 포함하는 패키지 및 그 제조 방법
KR101171329B1 (ko) * 2010-07-28 2012-08-10 서울옵토디바이스주식회사 발광 다이오드
KR101782557B1 (ko) * 2010-10-25 2017-09-28 삼성디스플레이 주식회사 유기 발광 디스플레이 장치 및 그 제조 방법
KR20120126856A (ko) 2011-05-13 2012-11-21 삼성전자주식회사 반도체 발광다이오드 칩 및 이를 이용한 발광장치
JP5228089B2 (ja) * 2011-07-06 2013-07-03 シャープ株式会社 発光装置および表示装置
US8624482B2 (en) * 2011-09-01 2014-01-07 Toshiba Techno Center Inc. Distributed bragg reflector for reflecting light of multiple wavelengths from an LED
JP5731996B2 (ja) * 2012-02-21 2015-06-10 富士フイルム株式会社 半導体発光素子
US9099626B2 (en) 2012-04-02 2015-08-04 Jds Uniphase Corporation Broadband dielectric reflectors for LED
EP2648237B1 (en) 2012-04-02 2019-05-15 Viavi Solutions Inc. Broadband dielectric reflectors for LED
JP2014139997A (ja) 2013-01-21 2014-07-31 Rohm Co Ltd 発光素子および発光素子パッケージ
WO2014115697A1 (ja) * 2013-01-28 2014-07-31 シャープ株式会社 照明装置、表示装置、及びテレビ受信装置
WO2014122709A1 (ja) * 2013-02-07 2014-08-14 シャープ株式会社 半導体装置およびその製造方法
US20140316330A1 (en) 2013-03-15 2014-10-23 Gary Fudem Pressurized oxygen delivery system
CN104078843A (zh) * 2013-03-29 2014-10-01 新科实业有限公司 具有窄激光发射角度的多模垂直腔面发射激光器
JP6112986B2 (ja) * 2013-06-19 2017-04-12 キヤノン株式会社 半導体dbrおよび、半導体発光素子、固体レーザ、光音響装置、画像形成装置、および半導体dbrの製造方法
TWI478387B (zh) * 2013-10-23 2015-03-21 隆達電子股份有限公司 發光二極體結構
KR20160034534A (ko) * 2014-09-19 2016-03-30 삼성전자주식회사 반도체 발광 소자
KR102224848B1 (ko) * 2014-10-06 2021-03-08 삼성전자주식회사 발광 소자 패키지 제조 방법
KR102332218B1 (ko) * 2015-03-18 2021-11-29 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 발광 소자 및 이를 구비한 카메라 모듈
KR102480902B1 (ko) * 2015-09-18 2022-12-22 삼성전자주식회사 표시 장치
KR102471102B1 (ko) * 2015-10-23 2022-11-25 서울바이오시스 주식회사 분포 브래그 반사기를 가지는 발광 다이오드 칩

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20120161176A1 (en) 2010-12-24 2012-06-28 Seoul Opto Device Co., Ltd. Light emitting diode chip and method of fabricating the same
JP2014500629A (ja) 2010-12-24 2014-01-09 ソウル バイオシス カンパニー リミテッド 発光ダイオードチップ及びそれを製造する方法
KR101289442B1 (ko) 2012-03-02 2013-07-24 일진엘이디(주) 분포 브래그 반사기를 포함하는 질화물 반도체 발광소자 및 그 제조 방법

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US20190067526A1 (en) 2019-02-28
WO2017069372A1 (en) 2017-04-27
US20200411725A1 (en) 2020-12-31
TW201715750A (zh) 2017-05-01
EP3353821A1 (en) 2018-08-01
JP6275788B2 (ja) 2018-02-07
EP3353821A4 (en) 2019-05-01
JP2017085081A (ja) 2017-05-18
JP6831801B2 (ja) 2021-02-17
TWI613839B (zh) 2018-02-01
KR20170047664A (ko) 2017-05-08
TWI665810B (zh) 2019-07-11
CN106611811A (zh) 2017-05-03
JP2018088535A (ja) 2018-06-07
TW201806182A (zh) 2018-02-16
EP3353821B1 (en) 2021-05-26
US10804437B2 (en) 2020-10-13
CN106611811B (zh) 2018-12-25
US12471416B2 (en) 2025-11-11

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