WO2022104651A1 - Dbr 结构、 led 芯片、半导体发光器件及制造方法及显示面板 - Google Patents

Dbr 结构、 led 芯片、半导体发光器件及制造方法及显示面板 Download PDF

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Publication number
WO2022104651A1
WO2022104651A1 PCT/CN2020/130156 CN2020130156W WO2022104651A1 WO 2022104651 A1 WO2022104651 A1 WO 2022104651A1 CN 2020130156 W CN2020130156 W CN 2020130156W WO 2022104651 A1 WO2022104651 A1 WO 2022104651A1
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Prior art keywords
material layer
region
layer
optical thickness
led chip
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PCT/CN2020/130156
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English (en)
French (fr)
Inventor
王庆
栗伟
何敏游
刘士伟
洪灵愿
林素慧
张中英
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厦门三安光电有限公司
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Application filed by 厦门三安光电有限公司 filed Critical 厦门三安光电有限公司
Priority to CN202310611638.8A priority Critical patent/CN116632132A/zh
Priority to CN202080007443.7A priority patent/CN113826222B/zh
Priority to PCT/CN2020/130156 priority patent/WO2022104651A1/zh
Publication of WO2022104651A1 publication Critical patent/WO2022104651A1/zh
Priority to US18/320,057 priority patent/US20230290907A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/10—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
    • H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/1336—Illuminating devices
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
    • G02F2201/34—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 reflector
    • G02F2201/346—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 reflector distributed (Bragg) reflector

Definitions

  • the present invention relates to the field of semiconductor devices, and in particular, to a DBR structure, an LED chip, a semiconductor light-emitting device, a manufacturing method thereof, and a display panel.
  • LED chips have been rapidly developed in the field of lighting as a light source.
  • Mini LED as an improved version of LED backlight technology, has been rapidly popularized because it can greatly improve the picture effect of LCD panels.
  • the MiniLED chip flip-chip solution is adopted.
  • the control of the light-emitting angle of the Mini LED chip is also a key and difficult point in its technical route.
  • the current conventional method is to coat a distributed Bragg reflection structure (distributed Bragg reflection, DBR) on the substrate side of the light-emitting surface of the LED chip.
  • DBR distributed Bragg reflection
  • the DBR structure of the present invention includes a plurality of reflective film groups, and the reflective film groups include a first material layer and a second material layer stacked in sequence; wherein, along the stacking direction of the reflective film groups, the distributed Bragg reflection
  • the structure includes: a first area and a second area, the optical thickness ranges of the first material layer are different in the first area and the second area, and the second material layer is in the first area and the second area. The optical thickness ranges of the second regions are different.
  • the first area is closer to the substrate, and mainly reflects the light emitted by the LED chip; the second area is formed above the first area, and the deflection of the LED chip is 35° ⁇ 45° ° and 50° to 55° light have lower transmittance, which can reduce the front light transmittance of the chip.
  • the DBR structure and the packaging layer of the semiconductor light-emitting device have a difference in refractive index, which can improve the reflection effect and reduce the front light leakage after packaging.
  • the present invention provides a distributed Bragg reflection structure, which includes: a reflection film group, the reflection film group includes a first material layer and the second material layer stacked in sequence, The refractive indices of the first material layer and the second material layer are different;
  • the distributed Bragg reflection structure includes: a first region and a second region, and the first material layer has different differences between the first region and the second region.
  • the optical thickness range, the second material layer has different optical thickness ranges in the first region and the second region.
  • the optical thicknesses of the first material layer and the second material layer are both greater than ⁇ 0 /4, where 420 ⁇ 0 ⁇ 470 nm.
  • the optical thicknesses of the first material layer and the second material layer are both ⁇ 1 /4, where ⁇ 1 ⁇ 550 nm.
  • the first material layer has a first optical thickness, and the first optical thickness is ⁇ 2 /4; the second material layer has a second optical thickness, and the second The optical thickness is ⁇ 3 /4, where ⁇ 2 ⁇ 900 nm and ⁇ 3 ⁇ 700 nm.
  • the number of the reflective film groups ranges from 6 to 19.
  • the refractive index of the first material layer is smaller than the refractive index of the second material layer.
  • it further includes the second material layer formed under the reflective film group.
  • the distributed Bragg reflection structure further includes a third region, the third region is located above the second region, and the oxygen content of the second material layer in the third region is lower than that of the second region The oxygen content of the second material layer in the first region and the second region.
  • the second material layers in the first region and the second region are TiO 2 layers
  • the second material layers in the third region are TiO n layers, where 1.7 ⁇ n ⁇ 1.95.
  • an LED chip comprising:
  • the substrate includes a first surface and a second surface disposed oppositely;
  • a DBR structure formed on the second surface of the substrate comprising: a reflective film group, the reflective film group comprising a first material layer and the second material layer stacked in sequence, the first material layer A material layer and the second material layer have different refractive indices; wherein, along the stacking direction of the reflective film group, the distributed Bragg reflection structure includes: a first region and a second region, the first material layer The first region and the second region have different optical thickness ranges, and the second material layer has different optical thickness ranges in the first region and the second region.
  • the optical thicknesses of the first material layer and the second material layer are both greater than ⁇ 0 /4, where 420 ⁇ 0 ⁇ 470 nm.
  • the optical thicknesses of the first material layer and the second material layer are both ⁇ 1 /4, where ⁇ 1 ⁇ 550 nm.
  • the first material layer has a first optical thickness, and the first optical thickness is ⁇ 2 /4; the second material layer has a second optical thickness, and the second The optical thickness is ⁇ 3 /4, where ⁇ 2 ⁇ 900 nm and ⁇ 3 ⁇ 700 nm.
  • the number of the reflective film groups ranges from 6 to 19.
  • the first region includes at least three layers of the first material, and the difference in optical thickness of the at least three layers of the first material is less than 30 nm.
  • the first region includes at least three layers of the second material, and the difference in optical thickness of the at least three layers of the second material is less than 30 nm.
  • the second region includes at least three layers of the first material layer, wherein at least one layer of the first material layer has an optical thickness below 135 nm, and at least one layer of the first material layer in the remaining first material layers is the first material layer.
  • the optical thickness of a material layer is above 175 nm.
  • the second region includes at least three layers of the first material layer, and the at least three layers of the first material layer have a maximum optical thickness D11 and a minimum optical thickness D12, and D11 and D12 satisfy: D11-D12 ⁇ 60nm.
  • the second region includes at least three layers of the second material layer, and the at least three layers of the second material layer have a maximum optical thickness D21 and a minimum optical thickness D22, and D21 and D22 satisfy: D21-D22 ⁇ 30nm.
  • the refractive index of the first material layer is smaller than the refractive index of the second material layer, and in the second region, the sum of the optical thicknesses of the first material layer is greater than the second material layer The sum of the optical thicknesses.
  • the maximum value of the optical thickness difference of the first material layer in the first region and the optical thickness difference of the second material layer in the first region in the reflective film group is smaller than that of the reflective film.
  • the maximum value among the optical thickness difference of the first material layer in the second region and the optical thickness difference of the second material layer in the second region in the group is smaller than that of the reflective film.
  • the DBR structure further includes the second material layer formed between the reflective film group and the substrate, and the refractive index of the first material layer is smaller than the refractive index of the second material layer Rate.
  • the distributed Bragg reflection structure further includes a third region, the third region is located above the second region, and the oxygen content of the second material layer in the third region is lower than that of the second region The oxygen content of the second material layer in the first region and the second region.
  • the second material layers in the first region and the second region are TiO 2 layers
  • the second material layers in the third region are TiO n layers, where 1.7 ⁇ n ⁇ 1.95.
  • a semiconductor light-emitting device comprising:
  • the packaging support includes a die bonding area
  • the LED chip includes: a substrate, the substrate includes a first surface and a second surface arranged oppositely; a light-emitting epitaxial layer formed on the first surface; a light-emitting epitaxial layer formed above the light-emitting epitaxial layer an electrode; and a DBR structure formed on the second surface of the substrate, and the LED chip is flip-chipped on the die-bonding region through the electrode; and
  • the encapsulation layer covers the LED chip
  • the DBR structure includes a reflective film group formed on the second surface of the substrate, the reflective film group includes a first material layer and a second material layer stacked in sequence, the first material layer and The refractive indices of the second material layers are different; and, along the stacking direction of the reflective film group, the distributed Bragg reflection structure includes: a first region and a second region, and the first material layer is in the first region. A region and the second region have different optical thickness ranges, and the second material layer has different optical thickness ranges in the first region and the second region.
  • the optical thicknesses of the first material layer and the second material layer are both greater than ⁇ 0 /4, where 420 ⁇ 0 ⁇ 470 nm.
  • the optical thicknesses of the first material layer and the second material layer are ⁇ 1 /4, where ⁇ 1 ⁇ 550 nm.
  • the first material layer has a first optical thickness, and the first optical thickness is ⁇ 2 /4; the second material layer has a second optical thickness, and the first optical thickness is The second optical thickness is ⁇ 3 /4, where ⁇ 2 ⁇ 900 nm and ⁇ 3 ⁇ 700 nm.
  • the number of the reflective film groups ranges from 6 to 19.
  • the refractive index of the first material layer is smaller than the refractive index of the second material layer.
  • the LED chip further includes the second material layer disposed between the substrate and the DBR structure.
  • the distributed Bragg reflection structure further includes a third region, the third region is located above the second region, and the oxygen content of the second material layer in the third region is lower than that of the second region The oxygen content of the second material layer in the first region and the second region.
  • the second material layers in the first region and the second region are TiO 2 layers
  • the second material layers in the third region are TiO n layers, where 1.7 ⁇ n ⁇ 1.95.
  • a method for preparing a semiconductor light-emitting device comprising the following steps:
  • the substrate including first and second oppositely disposed surfaces
  • a first material layer and two material layers with different refractive indices are sequentially stacked on the second surface of the substrate to form a DBR structure, and adjacent first material layers and second material layers form a reflective film group; wherein, Along the stacking direction of the reflective film group, the DBR structure includes: a first area and a second area, the first area and the second area both include the reflective film group, and the first material layer is The first region and the second region have different optical thickness ranges, and the second material layer has different optical thickness ranges in the first region and the second region.
  • the optical thicknesses of the first material layer and the second material layer are both greater than ⁇ 0 /4, where 420 ⁇ 0 ⁇ 470 nm.
  • the optical thicknesses of the first material layer and the second material layer are ⁇ 1 /4, where ⁇ 1 ⁇ 550 nm.
  • the first material layer has a first optical thickness, and the first optical thickness is ⁇ 2 /4; the second material layer has a second optical thickness, and the first optical thickness is The second optical thickness is ⁇ 3 /4, where ⁇ 2 ⁇ 900 nm and ⁇ 3 ⁇ 700 nm.
  • the number of the reflective film groups ranges from 6 to 19.
  • the refractive index of the first material layer is smaller than the refractive index of the second material layer.
  • the substrate is a sapphire substrate
  • the light-emitting epitaxial layer includes a buffer layer, an N-type GaN layer, a quantum well and a P-type GaN layer sequentially formed on the first surface of the sapphire substrate.
  • the preparation method also includes:
  • a packaging support is provided, the packaging support includes a die bonding area
  • An encapsulation layer is filled in the encapsulation groove to cover the chip, and the encapsulation layer has a refractive index different from that of the DBR structure.
  • the method before stacking the first material layer and the two material layers with different refractive indices in sequence on the second surface of the substrate to form the DBR structure, the method further includes: forming the first material layer and the second material layer on the second surface of the substrate. the second material layer.
  • the distributed Bragg reflection structure further includes a third region, the third region is located above the second region, and the oxygen content of the second material layer in the third region is lower than that of the second region The oxygen content of the second material layer in the first region and the second region.
  • the second material layers in the first region and the second region are TiO 2 layers
  • the second material layers in the third region are TiO n layers, where 1.7 ⁇ n ⁇ 1.95.
  • the semiconductor light emitting device includes a plurality of semiconductor light emitting devices, and the semiconductor light emitting device is the semiconductor light emitting device of the present invention.
  • the DBR structure, LED chip, semiconductor light-emitting device and its manufacturing method and display panel provided by the present invention have at least the following beneficial technical effects:
  • the DBR structure of the present invention includes a plurality of reflective film groups, the reflective film groups include a first material layer and a second material layer stacked in sequence, and the first material layer and the second material layer have different refractive indices, Preferably, the refractive index of the first material layer is smaller than the refractive index of the second material layer; wherein, along the stacking direction of the reflective film group, the distributed Bragg reflection structure includes: a first region and a second region, the The optical thickness ranges of the first material layer in the first region and the second region are different, and the optical thickness ranges of the second material layer in the first region and the second region are different.
  • the first material layer is SiO 2
  • the second material layer is a TiO 2 layer.
  • the optical thicknesses of the first material and the second material layer are both between 420 nm/4 and 550 nm/4; in the second region, the optical thickness of the first material layer is The thickness is between 420nm/4 ⁇ 900nm/4; the optical thickness of the second material layer is between 420nm/4 ⁇ 700nm/4.
  • the first region in the above-mentioned DBR structure maximizes the reflection inside the chip, and the light at 35°-45° and 50°-55° in the second region has lower transmittance, thereby reducing the front light transmittance of the chip.
  • the DBR structure of the present invention may further include a second material layer disposed under the plurality of reflective film groups, the second material layer is used as a starting layer of the DBR structure, and when the DBR structure is formed on the LED chip, the second material layer The layer is formed directly on the chip substrate, which prevents chip dicing, a problem with chipping.
  • the LED chip of the present invention includes the above-mentioned DBR structure, so that the light inside the chip can be reflected to the maximum extent, and the light of 35° ⁇ 45° and 50° ⁇ 55° is transmitted relatively low, thereby reducing the front light transmittance of the chip,
  • the light-emitting angle of the LED chip of the present invention can reach 160° ⁇ 170°.
  • the above-mentioned second material layer such as a TiO 2 layer, can also be formed between the substrate of the LED chip of the present invention and the above-mentioned DBR structure, and the second material layer can prevent chip chipping during chip cutting. , which is conducive to improving the qualified rate of products.
  • the semiconductor light emitting device of the present invention includes a package support, an LED chip mounted in a package groove of the package support, and a package layer covering the LED chip and filling the package groove.
  • the LED chip has a DBR structure formed on the surface of the side where the light-emitting epitaxial layer is not formed on the substrate, and the DBR structure is the above-mentioned DBR structure of the present invention.
  • the first area in the above-mentioned DBR structure maximizes the reflection inside the chip, and the light at 35° ⁇ 45° and 50° ⁇ 55° in the second area has a lower transmittance, thereby reducing the front light transmittance of the chip, reducing the Light leakage from semiconductor devices.
  • the above-mentioned second material layer can be first formed on the substrate of the LED chip, which makes the lower part of the DBR structure and the termination layer of the DBR structure both the second material layer, such as a TiO2 layer,
  • the TiO 2 layer above the substrate under the DBR structure can prevent chip chipping during the dicing process of semiconductor device fabrication;
  • the TiO 2 layer of the DBR structure termination layer has a difference in refractive index with the encapsulation layer, which can further reduce the light emission transmittance, improving the optical performance of the device.
  • the problem of light leakage of the display panel formed by the above-mentioned semiconductor light emitting device of the present invention is improved, and the display effect of the display panel is improved.
  • Figure 1 shows a schematic diagram of Brewster's angle.
  • FIG. 2 is a schematic diagram showing the principle of light leakage from a light-emitting device due to the existence of Brewster's angle.
  • FIG. 3 a shows a schematic diagram of a distributed Bragg reflection structure according to Embodiment 1 of the present invention.
  • FIG. 3b is a schematic diagram of a distributed Bragg reflection structure provided for an optional embodiment of Embodiment 1 of the present invention.
  • FIG. 4a is a schematic diagram showing the optical thickness setting of the material layers when the DBR structure shown in FIG. 3b includes 25 material layers.
  • FIG. 4b is a schematic diagram showing the optical thickness setting of the material layers when the DBR structure shown in FIG. 3b includes 31 material layers.
  • FIG. 4c is a schematic diagram showing the optical thickness setting of the material layers when the DBR structure shown in FIG. 3b includes 39 material layers.
  • FIG. 5a shows a comparison diagram of the internal transmittance of the chip with the DBR structure of the first embodiment, the chip with the conventional reflective structure, and the chip without the reflective structure.
  • 5b to 5d respectively show schematic diagrams of light exit angles of a chip without a reflective structure, a chip with a conventional reflective structure, and a chip with the DBR structure of the present invention.
  • FIG. 6 is a schematic structural diagram of an LED chip provided by Embodiment 2 of the present invention.
  • FIG. 7 is a schematic structural diagram of the semiconductor light-emitting device provided in Embodiment 3 of the present invention.
  • FIG. 8 is a schematic flowchart of a method for fabricating the semiconductor light-emitting device shown in FIG. 7 .
  • FIG. 9 is a schematic diagram showing the structure of forming a light-emitting epitaxial layer on the front side of the substrate.
  • FIG. 10 is a schematic diagram showing a structure of forming a mesa structure and forming an electrode in a light emitting epitaxial layer.
  • FIG. 11 shows a schematic diagram of forming a DBR structure on the backside of a substrate.
  • FIG. 12 is a schematic diagram of a distributed Bragg reflection structure provided in Embodiment 5 of the present invention.
  • FIG. 13 is a graph showing the internal transmittance comparison of the chip with the DBR structure of the first embodiment and the chip with the DBR structure of the fifth embodiment.
  • the reflected light 2 and the refracted light 3 are both partially polarized light, and the reflected light 2 is linearly polarized only when the incident angle is a certain angle
  • this particular angle is called Brewster's angle or deflection angle, denoted by ⁇ b .
  • This law is called Brewster's law.
  • a light-emitting device such as an LED
  • the light-emitting device when light is incident from the light-emitting epitaxial layer 02 on the substrate 01 to the encapsulation layer 04 , and passes through the reflective structure 03 between the light-emitting epitaxial layer 02 and the encapsulation layer 04 , due to the existence of Brewster's angle, the light cannot be 100% reflected inside the LED package, so the light-emitting device has the phenomenon of light leakage. That is to say, the above-mentioned reflection structure only considers the reflection at the chip end, and does not consider the reflection inside the chip in the end application after packaging.
  • the present invention provides a new reflective structure, which will now be described in detail through the following specific embodiments.
  • the distributed Bragg reflection structure 100 in this embodiment includes a reflective film group 1001 , and each reflective film group 1001 includes sequentially stacked reflective film groups 1001 .
  • the first material layer 1011 and the second material layer 1012 have different refractive indices.
  • the distributed Bragg reflection structure 100 in the stacking direction of the reflective film group, further includes: a first region 101 and a second region 102, and the first material layer is The first region and the second region have different optical thickness ranges, and the second material layer has different optical thickness ranges in the first region and the second region.
  • the refractive index of the first material layer 1011 is smaller than the refractive index of the second material layer 1012 .
  • the first material 1011 is a SiO 2 layer with a refractive index between 1.4 and 1.5
  • the second material layer 1012 is a TiO 2 layer with a refractive index of 2.42.
  • the sum of the optical thicknesses of the first material layers is greater than the sum of the optical thicknesses of the second material layers.
  • the number of reflective film groups is about 6-19, and the number of reflective film groups in the first region and the second region can be the same or different, and can be set according to the light emitting wavelength of the LED chip.
  • the first material layer 1011 has different optical thickness ranges in the first region and the second region
  • the second material layer 1012 also has different optical thickness ranges in the first region and the second region range of optical thicknesses.
  • the optical thicknesses of the first material layer and the second material layer in the above-mentioned DBR structure are both greater than ⁇ 0 /4, preferably, 420 ⁇ 0 ⁇ 470 nm.
  • the optical thicknesses of the first material layer 1011 and the second material layer 1012 in the first region 101 are ⁇ 1 /4, and ⁇ 1 ⁇ 550 nm. That is, in the first region 101, the optical thicknesses of the first material layer 1011 and the second material layer 1012 can be set within this range, and their specific optical thicknesses are determined by their physical thicknesses and the refractive index of the material itself.
  • the first material layer 1011 and the second material layer 1012 have different optical thickness ranges, the optical thickness of the first material layer 1101 is ⁇ 2 /4, and the optical thickness of the second material layer is ⁇ 3/4 , wherein, ⁇ 2 ⁇ 900nm, ⁇ 3 ⁇ 700nm.
  • the optical thicknesses of the first material layer 1011 and the second material layer 1012 can be set within the above-mentioned different optical thickness ranges, and the specific optical thicknesses of the two are also determined by their physical thicknesses and the refraction of the material itself. rate decision.
  • the first region 101 is formed on the light-emitting surface of the chip in the LED device, and the second region 102 is formed above the first region 101 .
  • the first region 101 with the above design mainly reflects the light emitted by the LED chip, and the first region 101 can reflect most of the light emitted by the LED. However, near the Brewster angle, 33° ⁇ 55° There is still a large amount of light transmission in the range; and the above-mentioned second region 102 located above the first region 101, through the setting of the optical thickness of the first material layer and the second material layer, the reflective film group in the second region is set.
  • the DBR structure of the present embodiment can finally reduce the front-side light leakage of the LED chip, thereby reducing the front-side light leakage of the LED package device and improving the light extraction rate.
  • the DBR structure further includes a second material layer 1012 disposed under the first region. That is, the DBR structure includes a second material layer 1012 and a reflective film group 1001 disposed above the second material layer, and the second material layer also serves as a part of the first region of the DBR structure. And the second material layer is the same material layer as the second material layer in the reflective film group, and its optical thickness setting can be the same as the setting of the optical thickness of the second material layer in the first region.
  • the first layer that is, the starting layer
  • the reflective film group is the first material layer and the second material layer stacked in sequence
  • the last layer of the DBR structure is also the second material layer.
  • the number of reflective film groups of the DBR structure can also be 6-19, therefore, the number of material layers of the DBR structure is between 13-39 layers.
  • the LED chip 300 includes a substrate 301 , and the substrate 301 includes a first surface and a second surface disposed opposite to each other; formed on the first surface of the substrate 301 and a DBR structure formed on the second surface of the substrate 301.
  • the light-emitting epitaxial layer may include a first semiconductor layer 303 , a quantum well layer 304 and a second semiconductor layer 305 that are sequentially formed on the first surface of the substrate 301 .
  • a buffer layer 302 is also formed between the layers 303 .
  • the first semiconductor layer is n-type GaN
  • the second semiconductor layer is p-type GaN. As shown in FIG.
  • the LED chip further includes an electrode 306 formed above the light-emitting epitaxial layer, and the electrode 306 includes a first electrode 3061 and a second electrode respectively connected to the first semiconductor layer 303 and the second semiconductor layer 305 3062, and an insulating protective layer 307 covering the light-emitting epitaxial layer and the electrode structure.
  • the DBR structure formed on the second surface of the substrate 301 may be the DBR structure 100 shown in FIG. 3 a or FIG. 3 b provided in the first embodiment above.
  • the DBR structure For the features of the DBR structure, reference may be made to the description of the first embodiment.
  • the first region includes at least three first material layers, and the optical thickness difference of the at least three first material layers is less than 30 nm; the first region includes at least three second material layers, which is The optical thickness difference of the at least three second material layers is also less than 30 nm.
  • the second region also includes at least three first material layers, at least three second material layers, and among the at least three first material layers, at least one of the first material layers has an optical thickness below 135 nm, and the rest of the first material layers have an optical thickness below 135 nm.
  • At least one of the first material layers has an optical thickness of more than 175 nm; among at least three second material layers, at least one of the second material layers has an optical thickness of less than 135 nm.
  • each of the at least three first material layers in the second region has a maximum optical thickness D11 and a minimum optical thickness D12, and the relationship between D11 and D12 is as follows: D11-D12 ⁇ 60nm.
  • D11-D12 ⁇ 60nm When the first material layer is a SiO 2 layer, due to the characteristics of the SiO 2 material itself, excessive thickness may easily cause the DBR structure to crack, causing the DBR structure to lose its reflective effect. Therefore, preferably, 120nm ⁇ D11-D12 ⁇ 60nm.
  • the second region also includes at least three second material layers.
  • each second material layer also has a maximum optical thickness D21 and a minimum optical thickness D22, and the difference between D11 and D12 is The following relationship is satisfied: D21-D22 ⁇ 30nm, preferably, 70nm ⁇ D21-D22 ⁇ 30nm. More preferably, there is a maximum value between the optical thickness difference of the first material layer in the first area and the optical thickness difference of the second material layer in the first area in the reflection module forming the above-mentioned DBR structure. The maximum value is recorded as the maximum value of the optical thickness difference in the first area.
  • the optical thickness difference of the first material layer in the reflection module in the second area is the same as the optical thickness difference of the second material layer in the second area.
  • There is a maximum value and the maximum value is recorded as the maximum value of the optical thickness difference of the second region, and the maximum value of the optical thickness difference of the first region is smaller than the maximum value of the optical thickness difference of the second region.
  • the optical thickness distributions of each material layer are respectively shown when the DBR structure includes 25, 31 and 39 material layers, respectively. It can be seen from FIGS. 4a to 4c that in the first region and the second region, the optical thicknesses of the first material layer 1011 are distributed in different optical thickness ranges, but in general, the first material layer and the second material layer The optical thicknesses are all greater than ⁇ 0 /4, where 420 ⁇ 0 ⁇ 470nm. Moreover, although the total number of material layers of each DBR structure shown in FIGS. 4a to 4c is different, the optical thickness range of each material layer is the same in the first region and the second region of the different DBR structures.
  • the optical thickness ranges of the first material layer and the second material layer are both (420nm ⁇ 550nm)/4; in the second region 102, the first material layer 1011 and the second material layer 1012 have In different optical thickness ranges, the optical thickness of the first material layer 1101 is between (420 nm ⁇ 900 nm)/4, and the optical thickness of the second material layer is between (420 nm ⁇ 700 nm)/4.
  • the specific optical thickness of each material layer in the DBR structure with different material layers is different, which needs to be determined according to the number of material layers, the physical thickness of each material layer, the refractive index of the material itself, the wavelength of the light emitted from the chip, etc. A combination of factors is determined.
  • the DBR structure of this embodiment includes the second material layer and the first material layer and the second material layer that are stacked in sequence above the second material layer, this makes the starting layer of the DBR structure and the The termination layers are all second material layers, such as the TiO 2 layer described in this embodiment. Therefore, the DBR structure of this optional embodiment can reduce the light leakage from the front side of the device and at the same time, the TiO 2 layer of the second material layer on the light emitting surface of the chip can prevent the chip edge and corner chipping problem when the chip is cut. There is a difference between the refractive index of the second material layer TiO2 layer of the last layer and the refractive index of the packaging layer of the LED light-emitting device, which can further improve the reflection effect and further reduce the front light leakage of the device.
  • the internal transmittance of the LED chip with the above-mentioned DBR structure of this embodiment the LED chip with a conventional reflective structure, and the LED chip without any reflective structure and The light-emitting angle is tested and compared, and the chip in it is an LED chip with a wavelength of 450 nm as an example.
  • Fig. 5a shows a comparison diagram of the internal transmittance of a chip without a reflective structure, a chip with a conventional reflective structure, and a chip with the DBR structure of the present invention
  • Figs. 5b to 5d respectively show a chip without a reflective structure, a chip with The light-emitting angle of the chip with the conventional reflective structure and the chip with the DBR structure of the present invention.
  • the DBR structure is the DBR structure shown in Figure 3b.
  • the conventional reflective structure refers to a reflective structure formed by alternately stacking first material layers (eg, TiO 2 ) and second material SiO 2 with different refractive indices.
  • first material layers eg, TiO 2
  • second material SiO 2 with different refractive indices.
  • the number of film layers of different reflective structures is the same.
  • the conventional reflective structure includes a first TiO2 / SiO2 film group and a second TiO2 / SiO2 film group, wherein the numbers of the first and second TiO2 / SiO2 film groups are both 6, and the first TiO2/SiO2 film group
  • the optical thickness of TiO2 in the 2 / SiO2 film group is 41.2 nm
  • the optical thickness of SiO2 is 69.5 nm
  • the optical thickness of TiO2 in the second TiO2 / SiO2 film group is 50.5 nm
  • the optical thickness of SiO2 is 85.2 nm .
  • the number of reflective film groups of the DBR structure in the LED chip with the DBR structure of this embodiment is also 12.
  • the conventional DBR structure can significantly reduce the transmittance inside the LED chip, but at and around Brewster's angle (35 ⁇ 55°), the LED The internal transmittance of the chip is still as high as about 50%.
  • the transmittance of the LED chip with the DBR structure of the present invention at Brewster's angle and its vicinity (35-55°) is significantly reduced, especially at the vicinity of 35°-40° and 50°-55°, the front transmittance of the LED chip is remarkable reduce.
  • the light-emitting angle of the LED chip without any reflective structure is about 130°-140°, and the front side of the LED chip has serious light leakage;
  • the light-emitting angle of the LED chip with a conventional DBR structure is about 150°-160° , at the Brewster angle and its vicinity (35 ⁇ 55°), the light leakage of the LED chip is still relatively serious; for the LED chip with the DBR structure shown in FIG.
  • the Brewster angle and its vicinity (35 ⁇ 55°) LED The transmittance of the chip is significantly reduced, especially in the vicinity of 35° ⁇ 40° and 50° ⁇ 55°, the front transmittance of the LED chip is significantly reduced, and the light emitting angle of the LED chip reaches 160° ⁇ 170°. It can be seen that the DBR structure of the present invention can significantly reduce the internal front transmittance of the LED chip, thereby reducing the front light leakage of the LED light emitting device and improving the display effect of the device.
  • the transmittance of the LED chip in this embodiment is significantly reduced at Brewster's angle and its vicinity, that is, the angle ⁇ (35 ⁇ 55°) shown in FIG. 6 , especially at 35° ⁇ 40° And around 50° ⁇ 55°, the front transmittance of the LED chip is significantly reduced, the front light leakage of the LED chip is suppressed, and the light exit angle reaches 160° ⁇ 170°.
  • the semiconductor light-emitting device 200 includes:
  • the mounting bracket 201 can be any mounting bracket suitable for mounting and fixing LED chips. As shown in FIG. 7 , in an optional embodiment of this embodiment, the package bracket 201 is provided with a die-bonding area on one side of the mounting layer, and the die-bonding area is used to mount LED chips. In this embodiment, the above-mentioned die-bonding area is used for mounting LED chips. Taking the package groove as an example, of course, it can also be any other form of die bonding area.
  • An electrode layer 202 is disposed on the bottom of the mounting side of the package bracket 201 , and the electrode layer 202 includes two electrode layers arranged at intervals, which are respectively connected to the electrodes of the LED chip.
  • the LED chip 300 referring to FIG. 6 in combination with FIGS. 7 to 11, the LED chip 300 includes:
  • the substrate 301 includes a first surface and a second surface disposed oppositely;
  • the light-emitting epitaxial layer formed on the first surface includes a first semiconductor layer 303, a quantum well layer 304 and a second semiconductor layer that are sequentially formed on the first surface of the substrate
  • the layer 305 is further formed with a buffer layer 302 between the first surface of the substrate and the first semiconductor layer 303 .
  • the LED chip is flip-chipped in the package groove through the electrode; as shown in FIG. 7 , the LED chip is connected to the package bracket 201 through the electrode 306 on the electrode layer. Specifically, the first electrode and the second electrode of the electrode 306 are respectively connected to the two electrode layers of the electrode layer 202 .
  • the encapsulation layer 400 covers the DBR structure and the LED chip and fills the encapsulation groove of the encapsulation bracket.
  • the above-mentioned DBR structure includes: a reflective film group, or further includes a second material layer disposed under the plurality of reflective film groups.
  • the reflective film group includes a first material layer and a second material layer stacked in sequence, and the first material layer and the second material layer have different refractive indices; and, along the stacking direction of the reflective film group,
  • the distributed Bragg reflection structure includes: a first region and a second region, the optical thickness ranges of the first material layer are different in the first region and the second region, and the second material layer is in the second region. The optical thickness ranges of the first region and the second region are different.
  • the above-mentioned DBR structure in this embodiment is the same as the DBR structure in Embodiment 1 and Embodiment 2, and the first area is directly disposed on the second surface of the substrate 301, and the second area is disposed on the first area.
  • the specific structure and setting of the DBR will not be repeated here, and reference may be made to the detailed descriptions of the first and second embodiments above.
  • the LED chip with the above-mentioned DBR structure is at Brewster’s angle and its vicinity, especially around 35° ⁇ 40° and 50° ⁇ 55°, the internal transmittance of the LED chip is significantly reduced, and the LED chip has a significantly reduced internal transmittance.
  • the light-emitting angle reaches 160° ⁇ 170°. It can be seen that the DBR structure of the present invention can significantly reduce the internal front transmittance of the LED chip, thereby reducing the front light leakage of the LED light emitting device and improving the light extraction rate of the device.
  • This embodiment also provides a method for manufacturing the above-mentioned semiconductor light-emitting device. As shown in FIG. 8 , the method includes the following steps:
  • the substrate includes a first surface and a second surface disposed opposite to each other; as shown in FIG. 9 , the substrate 301 may be any substrate suitable for forming an epitaxial layer.
  • the substrate 301 is a sapphire substrate suitable for growing GaN epitaxial layers.
  • S200 forming a light-emitting epitaxial layer on the first surface of the substrate; as shown in FIG. 9 , sequentially forming a first semiconductor layer 303 , a quantum well layer 304 and a second semiconductor layer 305 on the first surface of the substrate 301 .
  • the step of forming a buffer layer 302 on the first surface of the substrate 301 is also included before forming the first semiconductor layer in an alternative embodiment.
  • the first semiconductor layer is n-type GaN
  • the second semiconductor layer is p-type GaN.
  • each mesa structure includes a p-type mesa and an n-type mesa, the top of the p-type mesa is p-type GaN, and the top of the n-type mesa is n-type GaN.
  • a first electrode 3061 and a second electrode 3062 are then formed over the n-type mesa and the p-type mesa, respectively, to form an electrode 306 structure.
  • the DBR structure includes: a first area and a second area, the first area and the second area both include a plurality of the reflective film groups, the The first material layer has different optical thickness ranges in the first region and the second region, and the second material layer has different optical thickness ranges in the first region and the second region:
  • each of the reflective film groups includes a first material layer 1011 and the second material layer 1012 stacked in sequence to form The first area 101 .
  • a plurality of reflective film groups are sequentially formed over the first region 101 to form the second region 102 .
  • the refractive indices of the first material layer 1011 and the second material layer 1012 are different, and the optical thickness ranges of the first material layer in the first region and the second region are different, and the second material layer in the The optical thickness ranges of the first region and the second region are different.
  • the above-mentioned DBR structure formed is the DBR structure shown in FIG. 3a in the embodiment of the present invention.
  • the first region 101 of the DBR structure can reflect most of the light emitted by the LED.
  • Bruce Near the special angle there is still a large amount of light transmission in the range of 33° to 55°; and the above-mentioned second area 102 located above the first area 101, by setting the optical thickness of the first material layer and the second material layer. , so that the reflective film group in the second area has a lower transmittance to the light at 35° ⁇ 45° and 50° ⁇ 55°, thereby inhibiting the device from 35° ⁇ 45° and 50° ⁇ 55°. light exits.
  • the DBR structure of the present embodiment can finally reduce the front-side light leakage of the LED chip, thereby reducing the front-side light leakage of the LED package device and improving the light extraction rate.
  • the step of forming the above-mentioned DBR structure further includes forming a second material layer on the second surface of the substrate 301 before forming the plurality of reflective film groups. Then, a plurality of reflective film groups are formed over the second material layer, and the second material layer constitutes a part of the first region.
  • the DBR structure formed in this optional embodiment is the DBR structure shown in FIG. 3b in the first embodiment. As described in the first embodiment, in the DBR structure, the first layer, that is, the starting layer, is the second material layer.
  • the last layer of the DBR structure is also the second material layer, such as the TiO 2 layer described in this embodiment. . Therefore, the DBR structure of this optional embodiment can reduce the light leakage from the front side of the device and at the same time, the TiO 2 layer of the second material layer on the light emitting surface of the chip can prevent the chip edge and corner chipping problem when the chip is cut.
  • the last layer of the second material layer TiO 2 layer has a refractive index difference with the packaging layer of the LED light-emitting device, which can further improve the reflection effect and further reduce the front light leakage of the device.
  • the light-emitting epitaxial layer, the DBR structure and the substrate are cut to obtain a single chip; with reference to FIG. 11 and FIG. 6 , cutting is performed along the area between the mesa structures shown in FIG. 11 to obtain the LED chip shown in FIG. 6 .
  • a package bracket is provided, and the package bracket includes a die bonding area; as shown in FIG. 7 , the mounting bracket 201 may be any mounting bracket suitable for mounting and fixing LED chips. As shown in FIG. 7 , in an optional embodiment of this embodiment, the die-bonding area of the package bracket 201 is formed as a package groove, and the package groove is used for accommodating and mounting the LED chip.
  • An electrode layer 202 is disposed at the bottom of the mounting side of the package bracket 201 , and the electrode layer 202 includes two electrode layers arranged at intervals.
  • the chip is flip-chipped in the package groove through the electrode structure; the first electrode 3061 and the second electrode 3062 of the LED chip are respectively connected to the electrode layer 202 of the package support.
  • An encapsulation layer is filled in the encapsulation groove to cover the chip, and the encapsulation layer has a refractive index different from that of the DBR structure.
  • the encapsulation layer evenly fills the encapsulation groove, and surrounds and covers the LED chip and the DBR structure.
  • the encapsulation layer 400 may be silica gel, and the refractive index of the silica gel is approximately between 1.41 and 1.53.
  • the LED chip with the DBR structure of the present invention has a significant decrease in the internal transmittance of the LED chip at Brewster's angle and its vicinity, especially in the range of 35°-40° and 50°-55°, and the light is emitted.
  • the angle increases significantly, up to 160° ⁇ 170°. It can be seen that the DBR structure of the present invention can significantly reduce the internal front transmittance of the LED chip, thereby reducing the front light leakage of the LED light emitting device and improving the display effect of the device.
  • the first layer and the termination layer are both second material layers, such as titanium oxide layers, and the TiO2 layer of the starting layer can be The problem of chip chipping and edge chipping during the cutting process is prevented during the preparation of semiconductor devices; there is a difference in the refractive index between the TiO2 layer of the termination layer and the encapsulation layer, which can further reduce the transmittance of light and improve the optical performance of the device.
  • This embodiment provides a display panel, which includes a semiconductor light-emitting device and a control unit.
  • the display panel may be a liquid crystal display panel, and the semiconductor light-emitting device is used as a backlight source of the liquid crystal display panel.
  • the above-mentioned semiconductor light-emitting device is the semiconductor light-emitting device described in Embodiment 3 of the present invention.
  • the structure of the semiconductor light emitting device is not repeated here, and the description of the third embodiment may be referred to.
  • the above-mentioned control unit is used to control related functions such as turning on or off of the semiconductor light-emitting device.
  • This embodiment provides a distributed Bragg reflection structure. Different from the DBR structure described in Embodiment 1, the DBR structure described in this embodiment further includes a third region 103 . In the stacking direction of the membrane stack structure, the third region 103 is located above the second region 102 , including Multiple reflective film groups.
  • each reflective film group 1001 in the DBR structure 100 includes a first material layer 1011 and a second material layer 1012 that are stacked in sequence.
  • the first material layer 1011 and the second material layer 1012 have different refractive indices.
  • the refractive index of the first material layer forming the above-mentioned DBR structure is smaller than the refractive index of the second material layer, and the materials forming the first material layer and the second material layer can both be oxides, for example, forming the first material layer
  • the layer 1011 can be made of SiO 2 with a refractive index between 1.4 and 1.5, and a material with a high refractive index, such as titanium oxide, forming the second material layer 1012 .
  • the oxygen content of the second material layer in the first and second regions is higher than the oxygen content of the second material layer in the third region, for example, the second material layer in the first and second regions It can be TiO 2 , and the second material layer in the third region can be TiO n , where 1.7 ⁇ n ⁇ 1.95.
  • the number of reflective film groups in the first area 101 is approximately 3-15
  • the number of reflective film groups in the second area 102 is approximately 3-15
  • the number of reflective film groups in the third area 103 is approximately
  • the number of reflective film groups in the first region, the second region and the third region can be the same or different, which can be set according to the wavelength of the light emitted by the light emitting structure and the different materials forming the reflective film group.
  • the thickness of the first material layer 1011 in the third region 103 ranges from 70 nm to 150 nm
  • the thickness of the second material layer 1023 in the third region ranges from 35 nm to 70 nm.
  • the oxygen content of the oxide in the second material layer forming the first and second regions and the second material layer forming the third region are different, for example, the present invention
  • the oxygen content of the second material layer in the third region is lower than the oxygen content of the second material layer in the first and second regions.
  • the DBR reflective film groups in the first and second regions are sequentially formed on the light-emitting surface of the LED device, and the DBR reflective film group in the third region is formed Above the DBR reflective film group in the second region.
  • the DBR film stack structure in the first and second regions can maximize the reflection inside the LED chip; the second material layer in the DBR film stack structure in the third region is relative to the DBR film stack structure in the first and second regions.
  • the reduction of the oxygen content of the second material layer in the middle can increase the absorption of light in the Brewster angle and its vicinity.
  • FIG. 13 shows a comparison diagram of the internal transmittance of the chip having the DBR structure described in the first embodiment and the chip having the DBR structure described in this embodiment.
  • the transmittance of the LED chip with the DBR structure of Example 1 is significantly reduced at Brewster’s angle and its vicinity (35-55°), but still has a transmittance of nearly 50% near 45-50° .
  • the LED chip with the DBR structure of the fifth embodiment (that is, the DBR film stack structure in the second region is added with the DBR film stack structure in the third region) is at and near Brewster's angle (35 ⁇ 55°), The internal transmittance of the LED chip is significantly reduced to about 15%, thereby further reducing the front-side light leakage of the LED light-emitting device.
  • the DBR structure, the semiconductor light-emitting device and the manufacturing method thereof and the display panel provided by the present invention have at least the following beneficial technical effects:
  • the DBR structure of the present invention includes a plurality of reflective film groups, the reflective film groups include a first material layer and a second material layer stacked in sequence, and the first material layer and the second material layer have different refractive indices;
  • the distributed Bragg reflection structure includes: a first region and a second region, and the optical thickness of the first material layer in the first region and the second region The ranges are different, and the optical thickness ranges of the second material layer in the first region and the second region are different.
  • the first material layer is SiO 2
  • the second material layer is a TiO 2 layer.
  • the optical thicknesses of the first material layer and the second material layer are both between 420 nm/4 and 470 nm/4; in the second area, the first material layer has The first optical thickness is between 420nm/4 ⁇ 700nm/4; the second material layer has a second optical thickness, and the second optical thickness is between 420nm/4 ⁇ 900nm/4.
  • the first region in the above-mentioned DBR structure maximizes the reflection inside the chip, and the second region has lower transmittance to light of 35° ⁇ 45° and 50° ⁇ 55°, thereby reducing the front light transmittance of the chip.
  • the DBR structure of the present invention may further include a second material layer disposed under the plurality of reflective film groups, the second material layer is used as a starting layer of the DBR structure, and when the DBR structure is formed on the LED chip, the second material layer The layer is formed directly on the chip substrate, which prevents chip dicing, a problem with chipping.
  • the DBR structure of the present invention may further include a third region located above the second region, and the oxygen content of the second material layer in the third region is lower than the oxygen content of the second material layer in the first region and the second region , the third region can increase the absorption of light near the Brewster angle, thereby further reducing the front-side light transmittance of the chip.
  • the LED chip of the present invention includes the above-mentioned DBR structure, so that the light inside the chip can be reflected to the maximum extent, and the light of 35° ⁇ 45° and 50° ⁇ 55° is transmitted relatively low, thereby reducing the front light transmittance of the chip,
  • the light-emitting angle of the LED chip of the present invention can reach 160° ⁇ 170°.
  • the above-mentioned second material layer such as a TiO 2 layer, can also be formed between the substrate of the LED chip of the present invention and the above-mentioned DBR structure, and the second material layer can prevent chip chipping during chip cutting. , which is conducive to improving the qualified rate of products.
  • the semiconductor light-emitting device of the present invention includes a package support, an LED chip mounted on a die-bonding region of the package support, and a package layer covering the LED chip and filling the package groove.
  • the LED chip has a DBR structure formed on the surface of the side where the light-emitting epitaxial layer is not formed on the substrate, and the DBR structure is the above-mentioned DBR structure of the present invention.
  • the first area in the above-mentioned DBR structure maximizes the reflection inside the chip, and the light at 35° ⁇ 45° and 50° ⁇ 55° in the second area has a lower transmittance, thereby reducing the front light transmittance of the chip, reducing the Light leakage from semiconductor devices.
  • the above-mentioned second material layer can be first formed on the substrate of the LED chip, which makes the lower part of the DBR structure and the termination layer of the DBR structure both the second material layer, such as a TiO2 layer,
  • the TiO 2 layer above the substrate under the DBR structure can prevent chip chipping during the cutting process during semiconductor device fabrication;
  • the TiO 2 layer of the DBR structure termination layer has a difference in refractive index with the encapsulation layer, which can further reduce the light emission transmittance, improving the optical performance of the device.
  • the problem of light leakage of the display panel formed by the above-mentioned semiconductor light emitting device of the present invention is improved, and the display effect of the display panel is improved.

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Abstract

一种DBR结构、LED芯片、半导体发光器件及其制造方法及显示面板。DBR结构包括多个反射膜组（1001），反射膜组（1001）包括依次叠置的折射率不同的第一材料层（1011）和第二材料层(1012)；其中，沿所述反射膜组（1001）的堆叠方向，DBR结构包含：第一区域（101）及第二区域（102），第一材料层（1011）在第一区域（101）和第二区域（102）的光学厚度范围不同，第二材料层（1012）在第一区域（101）和第二区域（102）的光学厚度范围不同。该DBR结构还可以包括设置在反射膜组（1001）下方的第二材料层（1012）。上述第一材料层（1011）的折射率小于第二材料层（1012）的折射率。通过设置材料层不同的光学厚度，上述DBR结构的第一区域（101）对芯片内部的反射最大化，第二区域（102）对35°-45°及50°-55°的光具有较低的透射率，从而降低芯片的正面透光率。

Description

DBR结构、LED芯片、半导体发光器件及制造方法及显示面板 技术领域
本发明涉及半导体器件领域，具体地，涉及一种DBR结构、LED芯片、半导体发光器件及其制造方法及显示面板。
 背景技术
LED芯片作为光源在照明领域得到了快速的发展。近年来，Mini LED作为LED背光技术的改良版本，由于其可大幅提升液晶显示面板的画面效果，得以迅速被推广开来。
为了提升MiniLED的出光效果，通过采用MiniLED芯片倒装方案。另外，由于芯片出光角度的大小将直接决定芯片的多项光学性能表现，MiniLED芯片的出光角度的控制也是其技术路线上的一个重点及难点。目前常规的方法是在LED芯片出光面的衬底一侧镀分布式布拉格反射结构（distributed Bragg reflection，DBR）。这种方案仅仅考虑了芯片端的光反射，未考虑封装后应用中芯片的光反射问题，通常会导致在芯片封装后的应用端，芯片的正面仍有较大的漏光，形成热点，进而影响终端产品的光学性能。
 技术解决方案
鉴于以上所述现有技术的缺点，本发明的目的在于提供一种DBR结构、LED芯片、半导体发光器件及其制造方法及显示面板。本发明的DBR结构包括多个反射膜组，所述反射膜组包括依次叠置的第一材料层及第二材料层；其中，沿所述反射膜组的堆叠方向，所述分布式布拉格反射结构包含：第一区域及第二区域，所述第一材料层在所述第一区域和所述第二区域的光学厚度范围不同，所述第二材料层在所述第一区域和所述第二区域的光学厚度范围不同。本发明的DBR结构应用与LED芯片时，第一区域更靠近衬底，并且主要起到对LED芯片发出的光进行反射；第二区域形成在第一区域上方，对偏向LED芯片35°~45°及50°~55°的光具有较低的透射率，由此能够降低芯片的正面透光率。在形成半导体发光器件时，该DBR结构与半导体发光器件的封装层在折射率上存在差异，能够提升反射效果，减少封装后的正面漏光。
为实现上述目的及其它相关目的，本发明提供了一种分布式布拉格反射结构，其包括：反射膜组，所述反射膜组包括依次叠置的第一材料层和所述第二材料层，所述第一材料层和所述第二材料层的折射率不同；
其中，沿所述反射膜组的堆叠方向，所述分布式布拉格反射结构包含：第一区域及第二区域，所述第一材料层在所述第一区域和所述第二区域具有不同的光学厚度范围，所述第二材料层在所述第一区域和所述第二区域具有不同的光学厚度范围。
可选地，所述第一材料层和所述第二材料层的光学厚度均大于λ 0/4，其中420≤λ 0≤470nm。
可选地，在所述第一区域中，所述第一材料层和所述第二材料层的光学厚度均为λ 1/4，其中λ 1≤550nm。
可选地，在所述第二区域中，所述第一材料层具有第一光学厚度，所述第一光学厚度为λ 2/4；第二材料层具有第二光学厚度，所述第二光学厚度为λ 3/4，其中λ 2≤900nm，λ 3≤700nm。
可选地，所述反射膜组的数量介于6~19。
可选地，所述第一材料层的折射率小于所述第二材料层的折射率。
可选地，还包括形成在所述反射膜组下方的所述第二材料层。
可选地，所述分布式布拉格反射结构还包含第三区域，所述第三区域位于所述第二区域的上方，所述第三区域中的第二材料层的含氧量低于所述第一区域和所述第二区域中所述第二材料层的含氧量。
可选地，第一区域和第二区域中的第二材料层为TiO 2层，第三区域中的第二材料层为TiO n层，其中，1.7≤n≤1.95。
根据本发明第二方面，提供一种LED芯片，所述LED芯片包括：
衬底，所述衬底包括相对设置的第一表面和第二表面；
形成在所述第一表面上的发光外延层；以及
形成在所述衬底的第二表面上的DBR结构，所述DBR结构包括：反射膜组，所述反射膜组包括依次叠置的第一材料层和所述第二材料层，所述第一材料层和所述第二材料层的折射率不同；其中，沿所述反射膜组的堆叠方向，所述分布式布拉格反射结构包含：第一区域及第二区域，所述第一材料层在所述第一区域和所述第二区域具有不同的光学厚度范围，所述第二材料层在所述第一区域和所述第二区域具有不同的光学厚度范围。
可选地，所述第一材料层和所述第二材料层的光学厚度均大于λ 0/4，其中420≤λ 0≤470nm。
可选地，在所述第一区域中，所述第一材料层和所述第二材料层的光学厚度均为λ 1/4，其中λ 1≤550nm。
可选地，在所述第二区域中，所述第一材料层具有第一光学厚度，所述第一光学厚度为λ 2/4；第二材料层具有第二光学厚度，所述第二光学厚度为λ 3/4，其中λ 2≤900nm，λ 3≤700nm。
可选地，所述反射膜组的数量介于6~19。
可选地，所述第一区域至少包括三层第一材料层，至少三层所述第一材料层的光学厚度差小于30nm。
可选地，所述第一区域至少包括三层第二材料层，至少三层所述第二材料层的光学厚度差小于30nm。
可选地，所述第二区域至少包含三层所述第一材料层，其中至少有一层所述第一材料层的光学厚度在135 nm以下，其余第一材料层中至少有一层所述第一材料层的光学厚度在175nm以上。
可选地，所述第二区域至少包含三层所述第一材料层，至少三层所述第一材料层具有一最大光学厚度D11和一最小光学厚度D12，D11和D12满足：D11-D12≥60nm。
可选地，所述第二区域至少包含三层所述第二材料层，至少三层所述第二材料层具有一最大光学厚度D21和一最小光学厚度D22，D21和D22满足：D21-D22≥30nm。
可选地，所述第一材料层的折射率小于所述第二材料层的折射率，在所述第二区域中，所述第一材料层的光学厚度之和大于所述第二材料层的光学厚度之和。
可选地，所述反射膜组中的第一材料层在第一区域的光学厚度差和所述第二材料层在所述第一区域中的光学厚度差中的最大值小于所述反射膜组中第一材料层在第二区域的光学厚度差和所述第二材料层在所述第二区域中的光学厚度差中的最大值。
可选地，所述DBR结构还包括形成在所述反射膜组与所述衬底之间的所述第二材料层，所述第一材料层的折射率小于所述第二材料层的折射率。
可选地，所述分布式布拉格反射结构还包含第三区域，所述第三区域位于所述第二区域的上方，所述第三区域中的第二材料层的含氧量低于所述第一区域和所述第二区域中所述第二材料层的含氧量。
可选地，第一区域和第二区域中的第二材料层为TiO 2层，第三区域中的第二材料层为TiO n层，其中，1.7≤n≤1.95。
根据本发明第三方面，提供了一种半导体发光器件，包括：
封装支架，所述封装支架包括固晶区；
LED芯片，所述LED芯片包括：衬底，所述衬底包括相对设置的第一表面和第二表面；形成在所述第一表面上的发光外延层；形成在所述发光外延层上方的电极；以及形成在所述衬底的第二表面上的DBR结构，所述LED芯片通过所述电极倒装在所述固晶区；以及
封装层，所述封装层覆盖所述LED芯片；
其中，所述DBR结构包括形成在所述衬底的第二表面上的反射膜组，所述反射膜组包括依次叠置的第一材料层和第二材料层，所述第一材料层和所述第二材料层的折射率不同；并且，沿所述反射膜组的堆叠方向，所述分布式布拉格反射结构包含：第一区域及第二区域，所述第一材料层在所述第一区域和所述第二区域具有不同的光学厚度范围，所述第二材料层在所述第一区域和所述第二区域具有不同的光学厚度范围。
可选地，所述第一材料层和所述第二材料层的光学厚度均大于λ 0/4，其中420≤λ 0≤470nm。
可选地，在所述第一区域中，所述第一材料层和所述第二材料层的光学厚度为λ 1/4，其中λ 1≤550nm。
可选地，在所述第二区域中，所述第一材料层具有第一光学厚度，所述第一光学厚度为λ 2/4；所述第二材料层具有第二光学厚度，所述第二光学厚度为λ 3/4，其中λ 2≤900nm，λ 3≤700nm。
可选地，所述反射膜组的数量介于6~19。
可选地，所述第一材料层的折射率小于所述第二材料层的折射率。
可选地，所述LED芯片还包括设置在所述衬底及所述DBR结构之间的所述第二材料层。
可选地，所述分布式布拉格反射结构还包含第三区域，所述第三区域位于所述第二区域的上方，所述第三区域中的第二材料层的含氧量低于所述第一区域和所述第二区域中所述第二材料层的含氧量。
可选地，第一区域和第二区域中的第二材料层为TiO 2层，第三区域中的第二材料层为TiO n层，其中，1.7≤n≤1.95。
根据本发明的第四方面，提供了一种半导体发光器件的制备方法，该方法包括以下步骤：
提供衬底，所述衬底包括相对设置的第一表面和第二表面；
在所述衬底的第一表面形成发光外延层；
在所述发光外延层上方形成电极；
在所述衬底的第二表面依次叠置具有不同折射率的第一材料层及二材料层以形成DBR结构，相邻的第一材料层和第二材料层形成一个反射膜组；其中，沿所述反射膜组的堆叠方向，所述DBR结构包含：第一区域及第二区域，所述第一区域和所述第二区域均包括所述反射膜组，所述第一材料层在所述第一区域和所述第二区域具有不同的光学厚度范围，所述第二材料层在所述第一区域和所述第二区域具有不同的光学厚度范围。
可选地，所述第一材料层和所述第二材料层的光学厚度均大于λ 0/4，其中420≤λ 0≤470nm。
可选地，在所述第一区域中，所述第一材料层和所述第二材料层的光学厚度为λ 1/4，其中λ 1≤550nm。
可选地，在所述第二区域中，所述第一材料层具有第一光学厚度，所述第一光学厚度为λ 2/4；所述第二材料层具有第二光学厚度，所述第二光学厚度为λ 3/4，其中λ 2≤900nm，λ 3≤700nm。
可选地，所述反射膜组的数量介于6~19。
可选地，所述第一材料层的折射率小于所述第二材料层的折射率。
可选地，所述衬底为蓝宝石衬底，所述发光外延层包括依次形成在所述蓝宝石衬底的第一表面上的缓冲层、N型GaN层、量子阱以及P型GaN层。
可选地，所述制备方法还包括：
对所述发光外延层、DBR结构以及衬底进行切割，获得单个的芯片；
提供封装支架，所述封装支架包括固晶区；
通过所述电极将所述芯片倒装在所述固晶区；
在所述封装凹槽中填充封装层以覆盖所述芯片，所述封装层的折射率与所述DBR结构的折射率不同。
可选地，在所述衬底的第二表面依次叠置具有不同折射率的第一材料层及二材料层，以形成DBR结构之前，还包括：在所述衬底的第二表面形成所述第二材料层。
可选地，所述分布式布拉格反射结构还包含第三区域，所述第三区域位于所述第二区域的上方，所述第三区域中的第二材料层的含氧量低于所述第一区域和所述第二区域中所述第二材料层的含氧量。
可选地，第一区域和第二区域中的第二材料层为TiO 2层，第三区域中的第二材料层为TiO n层，其中，1.7≤n≤1.95。
根据本发明的第五方面，还提供了一种显示面板，其特征在于，包括多个半导体发光器件所述半导体发光器件为本发明所述的半导体发光器件。
 有益效果
如上所述，本发明提供的DBR结构、LED芯片、半导体发光器件及其制造方法及显示面板，至少具备如下有益技术效果：
本发明的DBR结构包括多个反射膜组，所述反射膜组包括依次叠置的第一材料层和第二材料层，所述第一材料层和所述第二材料层的折射率不同，优选地，第一材料层的折射率小于第二材料层的折射率；其中，沿所述反射膜组的堆叠方向，所述分布式布拉格反射结构包含：第一区域及第二区域，所述第一材料层在所述第一区域和所述第二区域的光学厚度范围不同，所述第二材料层在所述第一区域和所述第二区域的光学厚度范围不同。例如，本发明一实施例中，上述第一材料层为SiO 2，第二材料层为TiO 2层。在所述第一区域中，所述第一材料和所述第二材料层的光学厚度均介于420nm/4~550nm/4；在所述第二区域中，所述第一材料层的光学厚度介于420nm/4~900nm/4；第二材料层的光学厚度介于420nm/4~700nm/4。上述DBR结构中的第一区域实现对芯片内部的反射最大化，第二区域35°~45°及50°~55°的光具有较低的透射率，从而降低芯片的正面透光率。本发明的DBR结构还可以包括设置在多个反射膜组的下方的第二材料层，该第二材料层作为DBR结构的起始层，在LED芯片上形成该DBR结构时，该第二材料层直接形成在芯片衬底上，可以防止芯片切割是崩边崩角的问题。
本发明的LED芯片包括上述DBR结构，因此能够实现芯片内部的光最大化地被反射，35°~45°及50°~55°的光较低地透射，从而降低芯片的正面透光率，本发明的LED芯片的发光角能够达到160°~170°。另外，本发明的LED芯片的衬底和上述DBR结构之间还可以形成有上述第二材料层，例如TiO 2层，该第二材料层可以在防止芯片切割过程中发生芯片崩边崩角问题，有利于提高产品的合格率。
本发明的半导体发光器件包括封装支架、安装在封装支架的封装凹槽中的LED芯片以及覆盖LED芯片并填充封装凹槽的封装层。其中，LED芯片在衬底不形成发光外延层的一侧的表面上形成有DBR结构，该DBR结构为本发明上述的DBR结构。上述DBR结构中的第一区域实现对芯片内部的反射最大化，第二区域35°~45°及50°~55°的光具有较低的透射率，从而降低芯片的正面透光率，降低半导体器件的漏光。
另外，形成有上述DBR结构之前，可以首先在LED芯片的衬底上形成上述第二材料层，这就使得DBR结构的下方以及DBR结构的终止层均为第二材料层，例如TiO 2层，DBR结构下方衬底上方的TiO 2层可以防止半导体器件制备时切割过程中发生芯片崩边崩角问题；DBR结构终止层的TiO 2层与封装层在折射率上存在差异，可以进一步降低光的透射率，提高器件的光学性能。
由本发明的上述半导体发光器件形成的显示面板的漏光问题得以改善，提升了显示面板的显示效果。
 附图说明
图1显示为布鲁斯特角的原理示意图。
图2显示为由于布鲁斯特角的存在造成的发光器件漏光的原理示意图。
图3a显示为本发明实施例一提供的分布式布拉格反射结构的示意图。
图3b显示为本发明实施例一的一可选实施例提供的分布式布拉格反射结构的示意图。
图4a显示为图3b所示的DBR结构包括25层材料层时材料层的光学厚度设置示意图。
图4b显示为图3b所示的DBR结构包括31层材料层时材料层的光学厚度设置示意图。
图4c显示为图3b所示的DBR结构包括39层材料层时材料层的光学厚度设置示意图。
图5a显示为具有实施例一的DBR结构的芯片、具有常规反射结构的芯片以及不具有反射结构的芯片的内部透射率对比图。
图5b~图5d分别显示为不具有反射结构的芯片、具有常规反射结构的芯片以及具有本发明的DBR结构的芯片的出光角示意图。
图6显示为本发明实施例二提供的LED芯片的结构示意图。
图7显示为本发明实施例三提供的半导体发光器件的结构示意图。
图8显示为图7所示的半导体发光器件的制备方法的流程示意图。
图9显示为在衬底正面形成发光外延层的结构示意图。
图10显示为在发光外延层中形成台面结构并形成电极的结构示意图。
图11显示为在衬底背面形成DBR结构的示意图。
图12显示为本发明实施例五提供的分布式布拉格反射结构的示意图。
图13显示为具有实施例一的DBR结构的芯片和具有实施例五的DBR结构的芯片的内部透射率对比图。
附图标记列表
[根据细则91更正 05.08.2021]　
1入射光；2反射光；3折射光；10入射面；01发光结构；02衬底；03反射结构04封装层；100分布式布拉格反射结构；1001反射膜组；101第一区域；102第二区域1011第一材料层；1012第二材料层；200半导体发光器件；201封装支架；202电极层300LED芯片；301衬底；302缓冲层；303第一半导体层；304量子阱层；305第二半导体层；306电极结构；3061第一电极；3062第二电极；307绝缘保护层；400封装层。
 本发明的实施方式
以下通过特定的具体实例说明本发明的实施方式，本领域技术人员可由本说明书所揭露的内容轻易地了解本发明的其它优点与功效。本发明还可以通过另外不同的具体实施方式加以实施或应用，本说明书中的各项细节也可以基于不同观点与应用，在没有背离本发明的精神下进行各种修饰或改变。
需要说明的是，本实施例中所提供的图示仅以示意方式说明本发明的基本构想，虽图示中仅显示与本发明中有关的组件而非按照实际实施时的组件数目、形状及尺寸绘制，其实际实施时各组件的形态、数量、位置关系及比例可在实现本方技术方案的前提下随意改变，且其组件布局形态也可能更为复杂。
如图1所示，自然光1在电介质界面10上反射和折射时，一般情况下反射光2和折射光3都是部分偏振光，只有当入射角为某特定角时反射光2才是线偏振光，其振动方向与入射面垂直，此特定角称为布鲁斯特角或起偏角，用θ b表示。此规律称为布鲁斯特律。
在发光器件，例如LED中，如图2所示，当光自位于衬底01上的发光外延层02入射至封装层04时，经过发光外延层02和封装层04之间的反射结构03时，由于布鲁斯特角的存在，导致在LED封装体内部，光不能100%被反射，因此发光器件存在漏光的现象。也就是说，上述反射结构仅仅考虑了芯片端的反射，并未考虑封装后在终端应用中的芯片内部的反射。在芯片封装后的应用端，芯片的正面仍有较大的漏光，会形成热点，影响终端产品的光学性能。基于此，本发明提供了一种新的反射结构，现通过如下具体实施例进行详细描述。
实施例一
本实施例提供一种分布式布拉格反射结构，如图3a所示，本实施例的分布式布拉格反射结构100（DBR结构）包括反射膜组1001，每一个反射膜组1001均包括依次叠置的第一材料层1011及第二材料层1012，第一材料层1011及第二材料层1012的折射率不同。在本实施例的可选实施例中，在反射膜组的堆叠方向上，所述分布式布拉格反射结构100进一步包括：第一区域101及第二区域102，并且，所述第一材料层在所述第一区域和所述第二区域具有不同的光学厚度范围，所述第二材料层在所述第一区域和所述第二区域具有不同的光学厚度范围。
在本实施例的优选实施例中，第一材料层1011的折射率小于第二材料层1012的折射率。例如，所述第一材料1011为折射率在1.4~1.5之间的SiO 2层，上述第二材料层1012为折射率为2.42的TiO 2层。并且，在所述第二区域中，所述第一材料层的光学厚度之和大于所述第二材料层的光学厚度之和。
在可选实施例中，反射膜组的数量大约为6~19，第一区域和第二区域的反射膜组数量可以根据相同也可以不同，具体可以根据LED芯片的出光波长进行设置。如上所述，第一材料层1011在所述第一区域和所述第二区域具有不同的光学厚度范围，所述第二材料层1012在所述第一区域和所述第二区域同样具有不同的光学厚度范围。优选地，上述DBR结构中的第一材料层和第二材料层的光学厚度均大于λ 0/4，优选地，420≤λ 0≤470nm。在优选实施例中，第一区域101中第一材料层1011和第二材料层1012的光学厚度为λ 1/4，λ 1≤550nm。即，在第一区域101中，可以在该范围内设置第一材料层1011和第二材料层1012的光学厚度，二者的具体光学厚度由其物理厚度及材料本身的折射率决定。第二区域102中，第一材料层层1011和第二材料层1012具有不同的光学厚度范围，第一材料层1101的光学厚度为λ 2/4，所述第二材料层的光学厚度为λ 3/4，其中，λ 2≤900nm，λ 3≤700nm。即，在第二区域102中，可以在上述不同的光学厚度范围内设置第一材料层1011和第二材料层1012的光学厚度，二者的具体光学厚度同样由其物理厚度及材料本身的折射率决定。
上述DBR结构应用与发光器件，例如LED器件中时，第一区域101形成在LED器件中芯片的出光面上，第二区域102形成在第一区域101上方。具有如上设计的第一区域101主要起到对LED芯片出射的光进行反射，该第一区域101对于LED出射的光的大部分能够进行反射，然而，在布鲁斯特角附近，33°~55°范围内仍存在大量的透光现象；而位于第一区域101上方的上述第二区域102，通过对其中第一材料层和第二材料层的光学厚度的设置，使得第二区域的反射膜组对偏向LED芯片35°~45°及50°~55°的光具有较低的透射率，由此抑制了器件在35°~45°及50°~55°之间的光出射。通过第一区域和第二区域的相互作用，本实施例的DBR结构最终能够减少LED芯片的正面漏光，由此能够减少LED封装器件的正面漏光，提高出光率。
如图3b所示，在本实施例的一可选实施例中，DBR结构还包括设置在第一区域下方的第二料层1012。即，该DBR结构包括第二材料层1012以及设置在该第二材料层上方的反射膜组1001，该第二材料层同样作为DBR结构的第一区域的一部分。并且该第二材料层与反射膜组中的第二材料层为相同的材料层，并且其光学厚度设置可以与第一区域中第二材料层的光学厚度的设置相同。
在图3b所示的DBR结构中，第一层即起始层为第二材料层。由于反射膜组是依次叠置的第一材料层和第二材料层，因此，在DBR结构的最后一层，即终止层也同样为第二材料层。该可选实施例中DBR结构的反射膜组的数量同样可以是6~19，因此，该DBR结构的材料层数介于13~39层。
实施例二
本实施例提供一种LED芯片，如图6所示，该LED芯片300包括衬底301，该衬底301包括相对设置的第一表面和第二表面；形成在衬底301的第一表面上的发光外延层，以及形成在衬底301的第二表面上的DBR结构。
本实施例中，上述发光外延层可以包括依次形成在衬底301的第一表面上的第一半导体层303、量子阱层304及第二半导体层305，在衬底第一表面与第一半导体层303之间还形成有缓冲层302。以GaN外延层为例，上述第一半导体层为n型GaN，第二半导体层为p型GaN。如图6所示，该LED芯片还包括形成在所述发光外延层上方的电极306，该电极306包括分别与第一半导体层303和第二半导体层305连接的第一电极3061和第二电极3062，以及覆盖所述发光外延层以及电极结构的绝缘保护层307。
形成在衬底301的第二表面上的DBR结构可以是上述实施例一提供的图3a或者图3b所示的DBR结构100。关于该DBR结构的特征，可以参照实施例一的描述。
另外，在本实施例的可选实施例中，在图3a和图3b所示的DBR结构中，反射膜组的数量介于6~19。结合图4a~图4c，其中第一区域中至少包括三层第一材料层，这至少三层第一材料层的光学厚度差小于30 nm；第一区域至少包括三层第二材料层，这至少三层第二材料层的光学厚度差同样小于30 nm。第二区域同样包括至少三层第一材料层，至少三层第二材料层，至少三层第一材料层中，其中至少有一层第一材料层的光学厚度在135 nm以下，其余第一材料层中，至少有一层第一材料层的光学厚度在175 nm以上；至少三层第二材料层中，其中至少有一层第二材料层的光学厚度在135 nm以下。可选地，第二区域的至少三层的各层第一材料层具有一最大光学厚度D11以及一最小光学厚度D12，并且D11和D12之间满足如下关系：D11-D12≥60nm。当第一材料层为SiO 2层时，由于SiO 2材料自身的特点，厚度过大容易造成DBR结构崩裂，使得DBR结构失去反射效果，因此优选地，120nm≥D11-D12≥60nm。第二区域同样至少包含三层第二材料层，这至少三层第二材料层中，各层第二材料层之间同样具有一最大光学厚度D21及一最小光学厚度D22，并且D11和D12之间满足如下关系：D21-D22≥30nm，优选地，70nm≥D21-D22≥30nm。更加优选地，形成上述DBR结构的反射模组中的第一材料层在第一区域的光学厚度差和所述第二材料层在所述第一区域中的光学厚度差存在一最大值，该最大值记为第一区域的光学厚度差最大值，反射模组中的第一材料层在第二区域的光学厚度差和所述第二材料层在所述第二区域中的光学厚度差同样存在一最大值，该最大值记为第二区域的光学厚度差最大值，第一区域的光学厚度差最大值小于第二区域的光学厚度差最大值。
如图4a~图4c所示，分别示出了DBR结构分别包括25层、31层及39层材料层时各材料层的光学厚度分布。由图4a~4c可以看出，在第一区域和第二区域，第一材料层1011的光学厚度分布在不同的光学厚度范围内，但是总体上，第一材料层和所述第二材料层的光学厚度均大于λ 0/4，其中420≤λ 0≤470nm。并且，虽然图4a~图4c所示的各DBR结构的总的材料层数不同，但是在不同的DBR结构的第一区域和第二区域中，各材料层的光学厚度范围是一致的。例如，在第一区域，第一材料层和第二材料层的光学厚度范围均介于（420nm~550nm）/4；第二区域102中，第一材料层层1011和第二材料层1012具有不同的光学厚度范围，第一材料层1101的光学厚度介于（420nm~900nm）/4，第二材料层的光学厚度介于（420nm~700nm）/4。另外，具有不同材料层数的DBR结构中各材料层的具体的光学厚度是不同的，这需要根据材料层数、各材料层的物理厚度以及材料本身的折射率、芯片出射光的波长等各种因素综合确定。
另外，如上所述，由于本实施例的DBR结构包括第二材料层以及位于第二材料层上方的依次叠置的第一材料层和第二材料层，这就使得DBR结构的起始层和终止层均为第二材料层，例如本实施例所述的TiO 2层。因此该可选实施例的DBR结构在实现上述减少器件正面漏光的同时，位于芯片出光面上的第二材料层TiO 2层可防止芯片切割时，芯片崩边崩角的问题。最后一层的第二材料层TiO 2层的折射率与LED发光器件的封装层折射率存在差异，能够进一步提升反射效果，进一步降低器件的正面漏光。
为了验证具有上述DBR结构的LED芯片的出光效果，本实施例中，将具有本实施例上述DBR结构的LED芯片、具有常规反射结构的LED芯片以及不具有任何反射结构的LED芯片内部透射率以及发光角进行了测试对比，其中的芯片以波长为450 nm的LED芯片为例。图5a示出了无反射结构的芯片、具有常规反射结构的芯片以及具有本发明的DBR结构的芯片的内部透射率对比图，图5b~图5d分别示出了不具有反射结构的芯片、具有常规反射结构的芯片以及具有本发明的DBR结构的芯片的出光角。其中该DBR结构为图3b所示的DBR结构。
在图5a中，常规反射结构是指具有不同折射率的第一材料层（例如TiO 2）和第二材料SiO 2交替堆叠形成的反射结构。为了更好地显示对比效果，不同的反射结构的膜层数量是相同的。图5a中，常规反射结构包括第一TiO 2/ SiO 2膜组和第二TiO 2/ SiO 2膜组，其中第一和第二TiO 2/ SiO 2膜组的数量均为6，第一TiO 2/ SiO 2膜组中TiO 2的光学厚度为41.2nm，SiO 2的光学厚度为69.5nm，第二TiO 2/ SiO 2中TiO 2的光学厚度为50.5nm，SiO 2的光学厚度为85.2nm。具有本实施例的DBR结构的LED芯片中DBR结构的反射膜组的数量同样为12。
由图5a可以看出，相对于未设置任何反射结构的LED芯片来说，常规的DBR结构能够显著降低LED芯片内部的透射率，但是在布鲁斯特角及其附近（35~55°），LED芯片的内部透射率仍然高达50%左右。具有本发明的DBR结构的LED芯片在布鲁斯特角及其附近（35~55°）的透射率显著降低，尤其在35°~40°及50°~55°附近，LED芯片的正面透射率显著降低。参照图5b~图5d，无任何反射结构的LED芯片的出光角大约为130°~140°，LED芯片的正面漏光严重；具有常规的DBR结构的LED芯片的出光角大约为150°~160°，在布鲁斯特角及其附近（35~55°），LED芯片的漏光仍然较为严重；具有本发明图3b所示的DBR结构的LED芯片，布鲁斯特角及其附近（35~55°）LED芯片的透射率显著降低，尤其在35°~40°及50°~55°附近，LED芯片的正面透射率显著降低，LED芯片的出光角达到160°~170°。由此可见，本发明的DBR结构能够显著降低LED芯片的内部的正面透射率，由此降低LED发光器件的正面漏光，提高器件的显示效果。
由于设置了上述DBR结构，本实施例的LED芯片在布鲁斯特角及其附近，即图6所示的角度θ（35≤θ≤55°）的透射率显著降低，尤其在35°~40°及50°~55°附近，LED芯片的正面透射率显著降低，LED芯片的正面漏光现象得到抑制，出光角达到160°~170°。
实施例三
本实施例提供一种半导体发光器件，如图7所示，该半导体发光器件200包括：
封装支架201，该安装支架201可以是任意适合安装固定LED芯片的安装支架。如图7所示，在本实施例的可选实施例中，封装支架201在安装层一侧设置有固晶区，该固晶区用于安装LED芯片，在本实施例中上述固晶区以封装凹槽为例，当然也可以是其他任意形式的固晶区。封装支架201安装侧的底部设置有电极层202，该电极层202包括间隔设置的两个电极层，分别与LED芯片的电极连接。
LED芯片300，参照图6并结合图7~图11，该LED芯片300包括：
衬底301，衬底301包括相对设置的第一表面和第二表面；
形成在所述第一表面上的发光外延层，在可选实施例中，该发光外延层包括依次形成在衬底的第一表面上的第一半导体层303、量子阱层304及第二半导体层305，在衬底第一表面与第一半导体层303之间还形成有缓冲层302。
形成在所述发光外延层上方的电极306以及覆盖在电极上方及发光外延层上方的绝缘保护层307，该电极306包括分别与第一半导体层303和第二半导体层305连接的第一电极3061和第二电极3062。
以及形成在所述衬底的第二表面上的DBR结构，所述LED芯片通过所述电极倒装在所述封装凹槽中；如图7所示，LED芯片通过电极306连接至封装支架201的电极层上。具体地，电极306的第一电极和第二电极分别与电极层202的两个电极层连接。
封装层400，所述封装层覆盖所述DBR结构及所述LED芯片并填充封装支架的封装凹槽。
在本实施例中，上述DBR结构包括：反射膜组，或者，还包括设置在多个反射膜组下方的第二材料层。所述反射膜组包括依次叠置的第以材料层和第二材料层，所述第一材料层和所述第二材料层的折射率不同；并且，沿所述反射膜组的堆叠方向，所述分布式布拉格反射结构包含：第一区域及第二区域，所述第一材料层在所述第一区域和所述第二区域的光学厚度范围不同，所述第二材料层在所述第一区域和所述第二区域的光学厚度范围不同。
本实施例的上述DBR结构与实施例一及实施例二中的DBR结构相同，并且其中的第一区域直接设置在衬底301的第二表面上，第二区域设置在第一区域上。关于DBR的具体结构及设置在此不再赘述，可参照上述实施例一及实施例二的详细描述。
同样参照图5a~同样5d，具有上述DBR结构的LED芯片在在布鲁斯特角及其附近，尤其在35°~40°及50°~55°附近，LED芯片的内部透射率显著降低，LED芯片的出光角达到160°~170°。由此可见，本发明的DBR结构能够显著降低LED芯片的内部的正面透射率，由此降低LED发光器件的正面漏光，提高器件的出光率。
本实施例还同时提供了上述半导体发光器件的制造方法，如图8所示，该方法包括以下步骤：
S100：提供衬底，所述衬底包括相对设置的第一表面和第二表面；如图9所示，该衬底301可以是任意适合形成外延层的衬底，在本实施例中，该衬底301为适合生长GaN外延层的蓝宝石衬底。
S200：在所述衬底的第一表面形成发光外延层；如图9所示，在衬底301的第一表面上依次形成第一半导体层303、量子阱层304以及第二半导体层305。在可选实施例中形成第一半导体层之前，还包括在衬底301的第一表面上形成缓冲层302的步骤。以形成GaN外延层为例，上述第一半导体层为n型GaN，第二半导体层为p型GaN。
S300：在所述发光外延层上方形成电极；参照图10，形成上述外延层之后，首先刻蚀外延层在衬底301的第一表面上形成外延层的台面结构，相邻的台面结构间隔设置，并且每一个台面结构均包括p型台面和n型台面，p型台面最上方为p型GaN，n型台面最上方为n型GaN。然后分别在n型台面和p型台面上方形成第一电极3061和第二电极3062，以形成电极306结构。
S400：在所述衬底的第二表面依次叠置具有不同折射率的第一材料层及第二材料层以形成DBR结构，相邻的第一材料层和第二材料层形成一个反射膜组；其中，沿所述反射膜组的堆叠方向，所述DBR结构包含：第一区域及第二区域，所述第一区域和所述第二区域均包括多个所述反射膜组，所述第一材料层在所述第一区域和所述第二区域具有不同的光学厚度范围，所述第二材料层在所述第一区域和所述第二区域具有不同的光学厚度范围：
同样可参照图3a，在所述衬底的第二表面依次形成多个反射膜组，每一个所述反射膜组包括依次叠置的第一材料层1011及所述第二材料层1012以形成第一区域101。
然后，在所述第一区域101上方继续依次形成多个反射膜组以形成第二区域102。第一材料层1011及第二材料层1012的折射率不同，并且，所述第一材料层在所述第一区域和所述第二区域的光学厚度范围不同，所述第二材料层在所述第一区域和所述第二区域的光学厚度范围不同。
形成的上述DBR结构为本发明实施例中图3a所示的DBR结构，如实施例一所述，该DBR结构的第一区域101对于LED出射的光的大部分能够进行反射，然而，在布鲁斯特角附近，33°~55°范围内仍存在大量的透光现象；而位于第一区域101上方的上述第二区域102，通过对其中第一材料层和第二材料层的光学厚度的设置，使得第二区域的反射膜组对35°~45°及50°~55°的光具有较低的透射率，由此抑制了器件在35°~45°及50°~55°之间的光出射。通过第一区域和第二区域的相互作用，本实施例的DBR结构最终能够减少LED芯片的正面漏光，由此能够减少LED封装器件的正面漏光，提高出光率。
在本实施例的可选实施例中，形成上述DBR结构的步骤还包括在形成多个反射膜组之前，首先在衬底301的第二表面上形成第二材料层。之后在该第二材料层上方形成多个反射膜组，该第二材料层构成第一区域的一部分。该可选实施例形成的DBR结构为实施例一中图3b所示的DBR结构。如实施例一所述，DBR结构中，第一层即起始层为第二材料层。由于反射膜组是依次叠置的第二材料层和第一材料层，因此，在DBR结构的最后一层，即终止层也同样为第二材料层，例如本实施例所述的TiO 2层。因此该可选实施例的DBR结构在实现上述减少器件正面漏光的同时，位于芯片出光面上的第二材料层TiO 2层可防止芯片切割时，芯片崩边崩角的问题。最后一层的第二材料层TiO 2层与LED发光器件的封装层有折射率差异，能够进一步提升反射效果，进一步降低器件的正面漏光。
形成图11所示的结构之后，还包括如下步骤：
对所述发光外延层、DBR结构以及衬底进行切割，获得单个的芯片；结合图11和图6，沿图11所示的台面结构之间的区域进行切割，获得图6所示LED芯片。
提供封装支架，所述封装支架包括固晶区；如图7所示，该安装支架201可以是任意适合安装固定LED芯片的安装支架。如图7所示，在本实施例的可选实施例中，封装支架201的固晶区形成为封装凹槽，该封装凹槽用于容纳并安装LED芯片。封装支架201安装侧的底部设置有电极层202，该电极层202包括间隔设置的两个电极层。
通过所述电极结构将所述芯片倒装在所述封装凹槽中；将LED芯片的第一电极3061和第二电极3062分别连接至封装支架的电极层202。
在所述封装凹槽中填充封装层以覆盖所述芯片，所述封装层的折射率与所述DBR结构的折射率不同。同样参照图7，该封装层均匀填充封装凹槽，并且包围覆盖LED芯片及DBR结构。在可选实施例中，该封装层400可以是硅胶，硅胶的折射率大约介于1.41~1.53。
同样可参照图5a~图5d，具有本发明的DBR结构的LED芯片在布鲁斯特角及其附近，尤其35°~40°及50°~55°范围内LED芯片的内部透射率显著降低，出光角显著增大，可达160°~170°。由此可见，本发明的DBR结构能够显著降低LED芯片的内部的正面透射率，由此降低LED发光器件的正面漏光，提高器件的显示效果。
另外，如上所述，当形成的所述DBR结构为图3b所述的DBR结构时，其第一层和终止层均为第二材料层，例如氧化钛层，起始层的TiO 2层可以防止半导体器件制备时切割过程中发生芯片崩边崩角问题；终止层的TiO 2层与封装层在折射率上存在差异，可以进一步降低光的透射率，提高器件的光学性能。
实施例四
本实施例提供一种显示面板，该显示面板包括半导体发光器件以及控制单元，例如该显示面板可以是液晶显示面板，半导体发光器件用于液晶显示面板的背光源。在可选实施例中，上述半导体发光器件为本发明实施例三所述的半导体发光器件。关于该半导体发光器件的结构在此不再赘述，可参照上述实施例三的描述。上述控制单元用于控制半导体发光器件的点亮或者关闭等等相关功能。
实施例五
本实施例提供一种分布式布拉格反射结构。与实施例一所述的DBR结构不同的是，本实施例所述DBR结构还进一步包括第三区域103，在膜堆结构的堆叠方向上，第三区域103位于第二区域102的上方，包括多个反射膜组。
如图12所示，在本实施例的可选实施例中，DBR结构100中每一个反射膜组1001均包括依次叠置的第一材料层1011和第二材料层1012，该第一材料层1011和第二材料层1012具有不同的折射率。
在本实施例中，形成上述DBR结构的第一材料层的折射率小于第二材料层的折射率，形成第一材料层和第二材料层的材料均可以是氧化物，例如形成第一材料层1011的可以是折射率在1.4~1.5之间的SiO 2，形成第二材料层1012的高折射率的材料，例如氧化钛。在优选实施例中，第一、第二区域中的第二材料层的含氧量高于第三区域中第二材料层的含氧量，例如第一、第二区域中的第二材料层可以是TiO 2，而第三区域中的第二材料层可以是TiO n，其中，1.7≤n≤1.95。在可选实施例中，第一区域101中反射膜组的数量大约为3~15，第二区域102中反射膜组的数量大约为3~15，第三区域103中反射膜组的数量大约为3~15，第一区域、第二区域和第三区域中反射膜组的数量可以相同也可以不同，具体可以根据发光结构发射的光的波长以及形成反射膜组的材料不同来设置。在优选实施例中，第三区域103的第一材料层1011的厚度范围介于70 nm~150 nm，第三区域的第二材料层1023的厚度范围介于35 nm~70 nm。
如上所述，图12所示的DBR结构中，形成第一、第二区域的第二材料层与形成第三区域的第二材料层中的所述氧化物的氧含量不同，例如，本发明一实施例中，第三区域中的第二材料层的氧含量低于第一、第二区域的第二材料层的氧含量。上述DBR结构中的第一区域实现对芯片内部的反射最大化，第二区域对布儒斯特角附近的光具有较低的透射率，第三区域增加对布儒斯特角以及附近的光的吸收，从而降低芯片的正面透光率。
图12所示的DBR结构应用于发光器件，例如LED器件中时，上述第一、第二区域的DBR反射膜组依次形成在LED器件中的出光面上，第三区域的DBR反射膜组形成在第二区域的DBR反射膜组上方。其中，第一、第二区域的DBR膜堆结构能够使LED芯片内部的反射最大化；第三区域的DBR膜堆结构中的第二材料层相对于第一、第二区域的DBR膜堆结构中第二材料层的氧含量降低，能够增加布儒斯特角以及其附近光的吸收。通过以上两方面的作用，减少LED芯片的正面漏光，提高出光率。
图13示出了具有实施例一所述的DBR结构的芯片以及具有本实施例所述DBR结构的芯片的内部透射率对比图。如图13所示，具有实施例一的DBR结构的LED芯片在布鲁斯特角及其附近（35~55°）的透射率显著降低，但是在45~50°附近仍然有近50%的透射率。具有实施例五的DBR结构（即，在第二区域的DBR膜堆结构的基础上增加设置第三区域的DBR膜堆结构）的LED芯片在布鲁斯特角及其附近（35~55°），LED芯片的内部透射率显著降低，降低至15%左右，由此可以进一步降低LED发光器件的正面漏光。
如上所述，本发明提供的DBR结构、半导体发光器件及其制造方法及显示面板，至少具备如下有益技术效果：
本发明的DBR结构包括多个反射膜组，所述反射膜组包括依次叠置的第一材料层和第二材料层，所述第一材料层和所述第二材料层的折射率不同；其中，沿所述反射膜组的堆叠方向，所述分布式布拉格反射结构包含：第一区域及第二区域，所述第一材料层在所述第一区域和所述第二区域的光学厚度范围不同，所述第二材料层在所述第一区域和所述第二区域的光学厚度范围不同。例如，本发明一实施例中，上述第一材料层为SiO 2，第二材料层为TiO 2层。在所述第一区域中，所述第一材料层和所述第二材料层的光学厚度均介于420nm/4~470nm/4；在所述第二区域中，所述第一材料层具有第一光学厚度，所述第一光学厚度介于420nm/4~700nm/4；第二材料层具有第二光学厚度，所述第二光学厚度介于420nm/4~900nm/4。上述DBR结构中的第一区域实现对芯片内部的反射最大化，第二区域对35°~45°及50°~55°的光具有较低的透射率，从而降低芯片的正面透光率。本发明的DBR结构还可以包括设置在多个反射膜组的下方的第二材料层，该第二材料层作为DBR结构的起始层，在LED芯片上形成该DBR结构时，该第二材料层直接形成在芯片衬底上，可以防止芯片切割是崩边崩角的问题。
本发明的DBR结构还可以包括位于第二区域上方的第三区域，该第三区域中的第二材料层的含氧量低于第一区域和第二区域中第二材料层的含氧量，第三区域能够增加对布儒斯特角附近的光的吸收，由此进一步降低芯片的正面透光率。
本发明的LED芯片包括上述DBR结构，因此能够实现芯片内部的光最大化地被反射，35°~45°及50°~55°的光较低地透射，从而降低芯片的正面透光率，本发明的LED芯片的发光角能够达到160°~170°。另外，本发明的LED芯片的衬底和上述DBR结构之间还可以形成有上述第二材料层，例如TiO 2层，该第二材料层可以在防止芯片切割过程中发生芯片崩边崩角问题，有利于提高产品的合格率。
本发明的半导体发光器件包括封装支架、安装在封装支架的固晶区的LED芯片以及覆盖LED芯片并填充封装凹槽的封装层。其中，LED芯片在衬底不形成发光外延层的一侧的表面上形成有DBR结构，该DBR结构为本发明上述的DBR结构。上述DBR结构中的第一区域实现对芯片内部的反射最大化，第二区域35°~45°及50°~55°的光具有较低的透射率，从而降低芯片的正面透光率，降低半导体器件的漏光。
另外，形成有上述DBR结构之前，可以首先在LED芯片的衬底上形成上述第二材料层，这就使得DBR结构的下方以及DBR结构的终止层均为第二材料层，例如TiO 2层，DBR结构下方衬底上方的TiO 2层可以防止半导体器件制备时切割过程中发生芯片崩边崩角问题；DBR结构终止层的TiO 2层与封装层在折射率上存在差异，可以进一步降低光的透射率，提高器件的光学性能。
由本发明的上述半导体发光器件形成的显示面板的漏光问题得以改善，提升了显示面板的显示效果。
[根据细则91更正 05.08.2021]　
上述实施例仅例示性说明本发明的原理及其功效，而非用于限制本发明。任何熟悉此技术的人士皆可在不违背本发明的精神及范畴下，对上述实施例进行修饰或改变。因此，举凡所属技术领域中具有通常知识者在未脱离本发明所揭示的精神与技术思想下所完成的一切等效修饰或改变，仍应由本发明的权利要求所涵盖。

Claims (45)

  1. 一种分布式布拉格反射结构，其特征在于，包括：
    反射膜组，所述反射膜组包括依次叠置的第一材料层和所述第二材料层，所述第一材料层和所述第二材料层的折射率不同；
    其中，沿所述反射膜组的堆叠方向，所述分布式布拉格反射结构包含：第一区域及第二区域，所述第一材料层在所述第一区域和所述第二区域具有不同的光学厚度范围，所述第二材料层在所述第一区域和所述第二区域具有不同的光学厚度范围。
  2. 根据权利要求1所述的分布式布拉格反射结构，其特征在于，所述第一材料层和所述第二材料层的光学厚度均大于λ 0/4，其中420≤λ 0≤470nm。
  3. [根据细则91更正 05.08.2021]　
    根据权利要求2所述的分布式布拉格反射结构，其特征在于，在所述第一区域中，所述第一材料层和所述第二材料层的光学厚度均为λ 1/4，其中λ 1≤550nm。
  4. 根据权利要求1或3所述的分布式布拉格反射结构，其特征在于，在所述第二区域中，所述第一材料层具有第一光学厚度，所述第一光学厚度为λ 2/4；第二材料层具有第二光学厚度，所述第二光学厚度为λ 3/4，其中λ 2≤900nm，λ 3≤700nm。
  5. 根据权利要求1所述的分布式布拉格反射结构，其特征在于，所述反射膜组的数量介于6~19。
  6. 根据权利要求1所述的分布式布拉格反射结构，其特征在于，所述第一材料层的折射率小于所述第二材料层的折射率。
  7. 根据权利要求6所述的分布式布拉格反射结构，其特征在于，还包括形成在所述反射膜组下方的所述第二材料层。
  8. 根据权利要求1所述的分布式布拉格反射结构，其特征在于，所述分布式布拉格反射结构还包含第三区域，所述第三区域位于所述第二区域的上方，所述第三区域中的第二材料层的含氧量低于所述第一区域和所述第二区域中所述第二材料层的含氧量。
  9. 根据权利要求8所述的分布式布拉格反射结构，其特征在于，第一区域和第二区域中的第二材料层为TiO 2层，第三区域中的第二材料层为TiO n层，其中，1.7≤n≤1.95。
  10. 一种LED芯片，其特征在于，所述LED芯片包括：
    衬底，所述衬底包括相对设置的第一表面和第二表面；
    形成在所述第一表面上的发光外延层；以及
    形成在所述衬底的第二表面上的DBR结构，所述DBR结构包括：反射膜组，所述反射膜组包括依次叠置的第一材料层和所述第二材料层，所述第一材料层和所述第二材料层的折射率不同；其中，沿所述反射膜组的堆叠方向，所述分布式布拉格反射结构包含：第一区域及第二区域，所述第一材料层在所述第一区域和所述第二区域具有不同的光学厚度范围，所述第二材料层在所述第一区域和所述第二区域具有不同的光学厚度范围。
  11. 根据权利要求10所述的LED芯片，其特征在于，所述第一材料层和所述第二材料层的光学厚度均大于λ 0/4，其中420≤λ 0≤470nm。
  12. [根据细则91更正 05.08.2021]　
    根据权利要求10所述的LED芯片，其特征在于，在所述第一区域中，所述第一材料层和所述第二材料层的光学厚度均为λ 1/4，其中λ 1≤550nm。
  13. 根据权利要求10或12所述的LED芯片，其特征在于，在所述第二区域中，所述第一材料层具有第一光学厚度，所述第一光学厚度为λ 2/4；第二材料层具有第二光学厚度，所述第二光学厚度为λ 3/4，其中λ 2≤900nm，λ 3≤700nm。
  14. 根据权利要求10所述的LED芯片，其特征在于，所述反射膜组的数量介于6~19。
  15. 根据权利要求10所述的LED芯片，其特征在于，所述第一区域至少包括三层第一材料层，至少三层所述第一材料层的光学厚度差小于30nm。
  16. 根据权利要求10所述的LED芯片，其特征在于，所述第一区域至少包括三层第二材料层，至少三层所述第二材料层的光学厚度差小于30nm。
  17. 根据权利要求10所述的LED芯片，其特征在于，所述第二区域至少包含三层所述第一材料层，其中至少有一层所述第一材料层的光学厚度在135 nm以下，其余第一材料层中至少有一层所述第一材料层的光学厚度在175nm以上。
  18. 根据权利要求10所述的LED芯片，其特征在于，所述第二区域至少包含三层所述第一材料层，至少三层所述第一材料层具有一最大光学厚度D11和一最小光学厚度D12，D11和D12满足：D11-D12≥60nm。
  19. 根据权利要求10所述的LED芯片，其特征在于，所述第二区域至少包含三层所述第二材料层，至少三层所述第二材料层具有一最大光学厚度D21和一最小光学厚度D22，D21和D22满足：D21-D22≥30nm。
  20. 根据权利要求10所述的LED芯片，其特征在于，所述第一材料层的折射率小于所述第二材料层的折射率，在所述第二区域中，所述第一材料层的光学厚度之和大于所述第二材料层的光学厚度之和。
  21. 根据权利要求10所述的LED芯片，其特征在于，所述反射膜组中的第一材料层在第一区域的光学厚度差和所述第二材料层在所述第一区域中的光学厚度差中的最大值小于所述反射膜组中第一材料层在第二区域的光学厚度差和所述第二材料层在所述第二区域中的光学厚度差中的最大值。
  22. 根据权利要求10所述的LED芯片，其特征在于，所述DBR结构还包括形成在所述反射膜组与所述衬底之间的所述第二材料层，所述第一材料层的折射率小于所述第二材料层的折射率。
  23. 根据权利要求10所述的分布式布拉格反射结构，其特征在于，所述分布式布拉格反射结构还包含第三区域，所述第三区域位于所述第二区域的上方，所述第三区域中的第二材料层的含氧量低于所述第一区域和所述第二区域中所述第二材料层的含氧量。
  24. 根据权利要求23所述的分布式布拉格反射结构，其特征在于，第一区域和第二区域中的第二材料层为TiO 2层，第三区域中的第二材料层为TiO n层，其中，1.7≤n≤1.95。
  25. 一种半导体发光器件，其特征在于，包括：
    封装支架，所述封装支架包括固晶区；
    LED芯片，所述LED芯片包括：衬底，所述衬底包括相对设置的第一表面和第二表面；形成在所述第一表面上的发光外延层；形成在所述发光外延层上方的电极；以及形成在所述衬底的第二表面上的DBR结构，所述LED芯片通过所述电极倒装在所述固晶区；以及
    封装层，所述封装层覆盖所述LED芯片；
    其中，所述DBR结构包括形成在所述衬底的第二表面上的反射膜组，所述反射膜组包括依次叠置的第一材料层和第二材料层，所述第一材料层和所述第二材料层的折射率不同；并且，沿所述反射膜组的堆叠方向，所述分布式布拉格反射结构包括：第一区域及第二区域，所述第一材料层在所述第一区域和所述第二区域具有不同的光学厚度范围，所述第二材料层在所述第一区域和所述第二区域具有不同的光学厚度范围。
  26. 根据权利要求25所述的半导体发光器件，其特征在于，所述第一材料层和所述第二材料层的光学厚度均大于λ 0/4，其中420≤λ 0≤470nm。
  27. [根据细则91更正 05.08.2021]　
    根据权利要求25所述的半导体发光器件，其特征在于，在所述第一区域中，所述第一材料层和所述第二材料层的光学厚度为λ 1/4，其中λ 1≤550nm。
  28. 根据权利要求25或27所述的半导体发光器件，其特征在于，在所述第二区域中，所述第一材料层具有第一光学厚度，所述第一光学厚度为λ 2/4；所述第二材料层具有第二光学厚度，所述第二光学厚度为λ 3/4，其中λ 2≤900nm，λ 3≤700nm。
  29. 根据权利要求25所述的半导体发光器件，其特征在于，所述反射膜组的数量介于6~19。
  30. 根据权利要求25所述的半导体发光器件，其特征在于，所述第一材料层的折射率小于所述第二材料层的折射率。
  31. 根据权利要求30所述的半导体发光器件，其特征在于，所述LED芯片还包括设置在所述衬底及所述DBR结构之间的所述第二材料层。
  32. 根据权利要求25所述的分布式布拉格反射结构，其特征在于，所述分布式布拉格反射结构还包含第三区域，所述第三区域位于所述第二区域的上方，所述第三区域中的第二材料层的含氧量低于所述第一区域和所述第二区域中所述第二材料层的含氧量。
  33. 根据权利要求32所述的分布式布拉格反射结构，其特征在于，第一区域和第二区域中的第二材料层为TiO 2层，第三区域中的第二材料层为TiO n层，其中，1.7≤n≤1.95。
  34. 一种半导体发光器件的制备方法，其特征在于，包括以下步骤：
    提供衬底，所述衬底包括相对设置的第一表面和第二表面；
    在所述衬底的第一表面形成发光外延层；
    在所述发光外延层上方形成电极；
    在所述衬底的第二表面依次叠置具有不同折射率的第一材料层及二材料层以形成DBR结构，相邻的第一材料层和第二材料层形成一个反射膜组；其中，沿所述反射膜组的堆叠方向，所述DBR结构包括：第一区域及第二区域，所述第一区域和所述第二区域均包括所述反射膜组，所述第一材料层在所述第一区域和所述第二区域具有不同的光学厚度范围，所述第二材料层在所述第一区域和所述第二区域具有不同的光学厚度范围。
  35. 据权利要求34所述的制备方法，其特征在于，所述第一材料层和所述第二材料层的光学厚度均大于λ 0/4，其中420≤λ 0≤470nm。
  36. [根据细则91更正 05.08.2021]　
    根据权利要求34所述的制备方法，其特征在于，在所述第一区域中，所述第一材料层和所述第二材料层的光学厚度为λ 1/4，其中λ 1≤550nm。
  37. 根据权利要求34或36所述的制备方法，其特征在于，在所述第二区域中，所述第一材料层具有第一光学厚度，所述第一光学厚度为λ 2/4；所述第二材料层具有第二光学厚度，所述第二光学厚度为λ 3/4，其中λ 2≤900nm，λ 3≤700nm。
  38. 根据权利要求34所述的制备方法，其特征在于，所述反射膜组的数量介于6~19。
  39. 根据权利要求34所述的制备方法，其特征在于，所述第一材料层的折射率小于所述第二材料层的折射率。
  40. 根据权利要求34所述的制备方法，其特征在于，所述衬底为蓝宝石衬底，所述发光外延层包括依次形成在所述蓝宝石衬底的第一表面上的缓冲层、N型GaN层、量子阱以及P型GaN层。
  41. 根据权利要求34所述的制备方法，其特征在于，还包括：
    对所述发光外延层、DBR结构以及衬底进行切割，获得单个的芯片；
    提供封装支架，所述封装支架包括固晶区；
    通过所述电极将所述芯片倒装在所述固晶区；
    在所述封装凹槽中填充封装层以覆盖所述芯片，所述封装层的折射率与所述DBR结构的折射率不同。
  42. 根据权利要求34所述的制备方法，其特征在于，在所述衬底的第二表面依次叠置具有不同折射率的第一材料层及第二材料层，以形成DBR结构之前，还包括：在所述衬底的第二表面形成所述第二材料层。
  43. 根据权利要求34所述的分布式布拉格反射结构，其特征在于，所述分布式布拉格反射结构还包含第三区域，所述第三区域位于所述第二区域的上方，所述第三区域中的第二材料层的含氧量低于所述第一区域和所述第二区域中所述第二材料层的含氧量。
  44. 根据权利要求43所述的分布式布拉格反射结构，其特征在于，第一区域和第二区域中的第二材料层为TiO 2层，第三区域中的第二材料层为TiO n层，其中，1.7≤n≤1.95。
  45. 一种显示面板，其特征在于，包括多个半导体发光器件，所述半导体发光器件为权利要求25~33中任意一项所述的半导体发光器件。
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