WO2014122709A1 - 半導体装置およびその製造方法 - Google Patents
半導体装置およびその製造方法 Download PDFInfo
- Publication number
- WO2014122709A1 WO2014122709A1 PCT/JP2013/007193 JP2013007193W WO2014122709A1 WO 2014122709 A1 WO2014122709 A1 WO 2014122709A1 JP 2013007193 W JP2013007193 W JP 2013007193W WO 2014122709 A1 WO2014122709 A1 WO 2014122709A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- film
- dbr
- layer
- tio
- refractive index
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract description 89
- 239000004065 semiconductor Substances 0.000 title claims description 143
- 238000004519 manufacturing process Methods 0.000 title claims description 19
- 229910052751 metal Inorganic materials 0.000 claims abstract description 135
- 239000002184 metal Substances 0.000 claims abstract description 135
- 230000003628 erosive effect Effects 0.000 claims abstract description 25
- 229910010413 TiO 2 Inorganic materials 0.000 claims description 134
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 71
- 238000007740 vapor deposition Methods 0.000 claims description 27
- 238000009751 slip forming Methods 0.000 claims description 13
- 239000010408 film Substances 0.000 abstract description 883
- 238000002310 reflectometry Methods 0.000 abstract description 27
- 238000004140 cleaning Methods 0.000 abstract description 16
- 238000005530 etching Methods 0.000 abstract description 11
- 239000010409 thin film Substances 0.000 abstract description 11
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 abstract description 10
- 238000010521 absorption reaction Methods 0.000 abstract description 6
- 238000005336 cracking Methods 0.000 abstract description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 4
- 229910052681 coesite Inorganic materials 0.000 abstract 2
- 229910052906 cristobalite Inorganic materials 0.000 abstract 2
- 239000000377 silicon dioxide Substances 0.000 abstract 2
- 229910052682 stishovite Inorganic materials 0.000 abstract 2
- 229910052905 tridymite Inorganic materials 0.000 abstract 2
- 238000005260 corrosion Methods 0.000 abstract 1
- 230000007797 corrosion Effects 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 271
- 239000000463 material Substances 0.000 description 44
- 238000005259 measurement Methods 0.000 description 39
- 239000000758 substrate Substances 0.000 description 37
- 229920002120 photoresistant polymer Polymers 0.000 description 32
- 238000000151 deposition Methods 0.000 description 16
- 230000008021 deposition Effects 0.000 description 15
- 239000002253 acid Substances 0.000 description 14
- 239000012788 optical film Substances 0.000 description 12
- 230000015572 biosynthetic process Effects 0.000 description 10
- 239000002356 single layer Substances 0.000 description 10
- 238000012360 testing method Methods 0.000 description 10
- 238000005253 cladding Methods 0.000 description 9
- 239000012212 insulator Substances 0.000 description 8
- 229910052594 sapphire Inorganic materials 0.000 description 8
- 239000010980 sapphire Substances 0.000 description 8
- 230000002829 reductive effect Effects 0.000 description 7
- 230000007423 decrease Effects 0.000 description 6
- 238000000605 extraction Methods 0.000 description 5
- 230000003287 optical effect Effects 0.000 description 5
- 239000011241 protective layer Substances 0.000 description 5
- 239000012528 membrane Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 238000004381 surface treatment Methods 0.000 description 3
- 238000005019 vapor deposition process Methods 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000003475 lamination Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 230000002265 prevention Effects 0.000 description 2
- 230000007261 regionalization Effects 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- -1 moisture Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000036961 partial effect Effects 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 238000012795 verification Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
- H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
- H01S5/125—Distributed Bragg reflector [DBR] lasers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
- H01S5/18369—Structure of the reflectors, e.g. hybrid mirrors based on dielectric materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
- H01S5/18377—Structure of the reflectors, e.g. hybrid mirrors comprising layers of different kind of materials, e.g. combinations of semiconducting with dielectric or metallic layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0025—Processes relating to coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18305—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] with emission through the substrate, i.e. bottom emission
Definitions
- the present invention relates to a semiconductor device such as a light emitting diode element or a semiconductor laser element having a distributed Bragg reflection film, and a manufacturing method thereof.
- a metal reflective film or a distributed Bragg reflective film is formed on a lower surface of a transparent substrate such as sapphire.
- FIG. 12 is a cross-sectional view for explaining a conventional light emitting diode chip having a distributed Bragg reflection film disclosed in Patent Document 1.
- FIG. 13 is an enlarged cross-sectional view of the distributed Bragg reflection film of FIG.
- a conventional light emitting diode chip 100 includes a substrate 101, a buffer layer 102 on the surface side of the substrate 101, a light emitting structure 103 on the buffer layer 102, and a transparent electrode 104 on the optical structure 103.
- a distributed Bragg reflection film 107, a reflective metal layer 108 on the distributed Bragg reflection film 107, and a protective layer 109 on the reflective metal layer 108 are provided on the back side of the substrate 101.
- the substrate 101 is not particularly limited as long as it is a transparent substrate, and may be, for example, a sapphire or SiC substrate.
- the substrate 101 may also have a predetermined uneven pattern such as a sapphire substrate (PSS) patterned on the upper surface, that is, the entire surface.
- PSS sapphire substrate
- the area of the substrate 101 determines the entire area of the chip. As the area of the light emitting diode chip 100 is relatively large, the reflection effect increases.
- the light emitting structure 103 includes a first conductive semiconductor layer 103a, a second conductive semiconductor layer 103b, and an active layer 103c disposed between the first conductive semiconductor layer 103a and the second conductive semiconductor layer 103b. And have.
- the first conductivity type semiconductor layer 103a and the second conductivity type semiconductor layer 103b may have opposite conductivity types, the first conductivity type may be n type, and the second conductivity type may be p type, Or they may be the opposite.
- the first conductive semiconductor layer 103a, the active layer 103c, and the second conductive semiconductor layer 103b may be formed of a gallium nitride-based compound semiconductor material, that is, (Al, In, Ga) N.
- the active layer 103c has a composition element and a composition ratio so as to emit light having a required wavelength, for example, ultraviolet light or blue light.
- the first conductive type semiconductor layer 103a and / or the second conductive type semiconductor layer 103b may be formed as a single layer as shown in the figure, but may be formed in a multilayer structure.
- the active layer 103c may be formed in a single quantum well structure or a multiple quantum well structure.
- the buffer layer 102 is disposed between the substrate 101 and the first conductive semiconductor layer 103a, this may not be necessary.
- the semiconductor layers 103a to 103c are each formed by MOCVD (metal-organic vapor deposition) or MBE (molecular). It may be formed using a beam epitaxy technique, or may be patterned using a photolithography and etching process so that a partial region of the first conductivity type semiconductor layer 103a is exposed.
- MOCVD metal-organic vapor deposition
- MBE molecular
- the transparent electrode layer 104 may be formed of, for example, ITO or Ni / Au on the second conductive semiconductor layer 103b. Since the transparent electrode layer 104 has a lower specific resistance than the second conductivity type semiconductor layer 103b, the transparent electrode layer 104 has a role of dispersing current throughout the chip.
- a p-electrode pad 105 is formed on a part of the transparent electrode layer 104, and an n-electrode pad 106 is formed on a part of the exposed surface exposed in the middle of the first conductivity type semiconductor layer 103a. The p-electrode pad 105 is electrically connected to the second conductivity type semiconductor layer 103b through the transparent electrode layer 104 as shown in the figure.
- a distributed Bragg reflection film 107 is disposed below the substrate 101, that is, on the back side of the substrate 101.
- the distributed Bragg reflective film 107 includes a first distributed Bragg reflective film 111 and a second distributed Bragg reflective film 112.
- the first distributed Bragg reflective film 111 is formed by repeatedly forming a plurality of pairs of the first material layer 111a and the second material layer 111b. A plurality of pairs of the material layer 112a and the fourth material layer 112b are repeatedly formed.
- the plurality of pairs of the first material layer 111a and the second material layer 111b have a relatively high reflectance with respect to light in the red wavelength region, for example, 550 nm or 630 nm, compared to light in the blue wavelength region.
- the distributed Bragg reflection film 112 may have a relatively high reflectance with respect to light in the blue wavelength region, for example, light at 460 nm, compared to light in the red or green wavelength region.
- the optical film thickness of the material layers 111a and 111b in the first distributed Bragg reflection film 111 is thicker than the optical film thickness of the material layers 112a and 112b in the second distribution Bragg reflection film 112, but this is not limitative. The opposite is also possible.
- the first material layer 111a may have the same material as the third material layer 112a, that is, the same refractive index
- the second material layer 111b may be the same material as the fourth material layer 112b, that is, the same refraction. May have a rate.
- the first material layer 111a and the third material layer 112a may be formed of a TiO 2 film (refractive index n: about 2.5), and the second material layer 111b and the fourth material layer 112b are SiO 2 films. (Refractive index n: about 1.5) may be formed.
- the high refractive index film and the low refractive index film are repeated here for 48 layers, thereby providing high reflectance performance in a wide wavelength band.
- the optical film thickness (refractive index ⁇ thickness) of the first material layer 111a has a substantially integral multiple relationship with the optical film thickness of the second material layer 111b.
- the film thickness may be substantially the same.
- the optical film thickness of the third material layer 112a has a substantially integral multiple relationship with the optical film thickness of the fourth material layer 112b, and preferably these optical film thicknesses are substantially the same. It is good.
- the optical film thickness of the first material layer 111a is made thicker than the optical film thickness of the third material layer 112a
- the optical film thickness of the second material layer 111b is made thicker than the optical film thickness of the fourth material layer 112b. May be.
- the optical film thickness of the first to fourth material layers 111a, 111b, 112a, 112b can be controlled by adjusting the refractive index and / or the actual thickness of each material layer.
- a reflective metal layer 108 such as Al, Ag, or Rh and a protective layer 109 for protecting the distributed Bragg reflective film 107 may be formed below the distributed Bragg reflective film 107.
- the protective layer 109 may be formed of, for example, any one metal layer selected from Ti, Cr, Ni, Pt, Ta, and Au, or an alloy thereof.
- the reflective metal layer 108 or the protective layer 109 can protect the distributed Bragg reflective film 107 from external impact and contamination.
- the reflective metal layer 108 or the protective layer 109 can prevent the distributed Bragg reflective film 107 from being deformed by a material such as an adhesive when the light emitting diode chip 100 is mounted on the light emitting diode package.
- the reflective metal layer 108 can reflect the light transmitted through the distributed Bragg reflective film 107, the thickness of the distributed Bragg reflective film 107 can be relatively reduced.
- the distributed Bragg reflection film 107 exhibits a relatively high reflectance, but may transmit visible light in a long wavelength region to light having a large incident angle. Therefore, by disposing the reflective metal layer 108 below the distributed Bragg reflective film 107, the light transmitted through the distributed Bragg reflective film 107 can be reflected by the reflective metal layer 108, thereby further improving the light emission utilization efficiency. Can do.
- the optical loss in the distributed Bragg reflective film 107 is reduced as compared to the case of conversely. Can be reduced.
- a light-emitting diode chip 100 as a conventional semiconductor light-emitting element of the face-up light emission system that emits all the light emitted from the active layer 103c upward on the p-electrode pad 105 and n-electrode pad 106 side is obtained. Can do.
- the light emitting diode chip 100 having the conventional distributed Bragg reflection film 107 disclosed in Patent Document 1 the light emitted from the light emitting structure including the internal active layer 103 c is reflected upward on the back side of the substrate 101.
- a distributed Bragg reflective film 107 (DBR film) is formed, and a reflective metal layer 108 is further formed on the distributed Bragg reflective film 107.
- the distributed Bragg reflection film 107 and the reflective metal layer 108 thereon have a reflectivity of 90% or more for blue wavelength light, green wavelength light, and red wavelength light.
- a DBR film (reflective film) on the substrate 101
- SiO 2 and TiO 2 are alternately laminated to form a total of about 40 layers (the final layer is SiO 2 from the viewpoint of reflectivity), and has a high wavelength broadband.
- hydrofluoric acid during the cleaning process in the subsequent process erodes the DBR film surface (decreases film thickness), absorbs moisture from the DBR film surface, and cracks are generated on the DBR film surface. In such a case, there is a problem that the optical characteristics of the DBR film change.
- the present invention solves the above-mentioned conventional problems, and the DBR film surface is eroded (thickness reduction) by the subsequent cleaning process or etching process, moisture is absorbed from the DBR film surface, or the DBR film surface.
- An object of the present invention is to provide a semiconductor device and a method for manufacturing the same that can suppress or prevent the occurrence of cracks.
- the low refractive index film in which a pair of the high refractive index film and the low refractive index film is repeatedly formed on the low refractive index film in a DBR film configuration serving as a reflective film.
- the high refractive index film is continuously formed as a final film for preventing erosion, thereby achieving the above object.
- the low refractive index film is an SiO 2 film
- the high refractive index film is a TiO 2 film
- the final TiO 2 film has a thickness of 1 to 13 nm. Yes.
- the film thickness of the final TiO 2 film in the semiconductor device of the present invention is 1 to 10 or 1 to 5 nm.
- the shape of the pattern edge portion of the DBR film configuration in the semiconductor device of the present invention has a slope shape in which the film thickness is thinner toward the tip side having a cross-sectional taper angle of 15 to 45 degrees.
- the multilayer reflective film having a DBR film structure has a number of layers in the range of 4 to 50 layers.
- a metal film (metal reflective film) is provided on the DBR film configuration (DBR film) and the underlying layer in the semiconductor device of the present invention.
- an Al film is used as the metal film in the semiconductor device of the present invention.
- a Ni film is used as an adhesion layer between the high refractive index film of the final film and the metal film, or the metal is directly on the high refractive index film of the final film.
- a membrane is used.
- the light reflectance in the vertical direction with respect to the DBR film configuration is 80% or more in the band range of the light wavelength from 400 to 600 nm.
- a method for manufacturing a semiconductor device according to the present invention is a method for manufacturing the above-described semiconductor device according to the present invention, wherein after the resist pattern is formed in a cross-sectional shape, the slope shape of the DBR film structure is formed by DBR vapor deposition. And a lift-off process for removing the resist pattern, which achieves the above object.
- the plasma cleaning and the DBR vapor deposition process are performed using an ion gun before and during the formation of the DBR film structure in the semiconductor device manufacturing method of the present invention.
- the DBR film structure and its underlying layer are further formed by metal film deposition using the lift-off process.
- a metal film is formed on the substrate.
- the pair of the high refractive index film and the low refractive index film is repeatedly formed on the low refractive index film on the low refractive index film.
- the high refractive index film is continuously formed as a final film to prevent erosion.
- the final film is a high refractive index film for preventing erosion
- the high refractive index film for preventing erosion covers the DBR film structure itself and protects the inside thereof.
- the vapor deposition formation at the pattern edge portion of the DBR film has a poor coverage and causes breakage. End up.
- the shape of the pattern edge portion (end portion) of the DBR film configuration has a slope shape with a thinner film thickness on the tip side having a cross-sectional taper angle of 15 to 45 degrees, the pattern of the DBR film The coverage of the vapor deposition film (metal reflection film) at the edge portion (end portion) becomes good and the occurrence of step breakage is prevented.
- the light-emitting diode chip 100 as the conventional semiconductor light-emitting element disclosed in Patent Document 1 is a face-up light emission method, and the light emitted from the active layer 103 c is emitted from the p-electrode pad 105 and the n-electrode pad 106. As a result, the light emission efficiency decreases.
- a face-down next-generation semiconductor light emitting device flip chip
- the p-electrode pad and Since light is not blocked by the n-electrode pad, it is possible to prevent a decrease in light emission efficiency.
- the DBR film surface is eroded (thickness reduction) in the subsequent cleaning process or etching process, moisture is absorbed from the DBR film surface, or cracks are generated on the DBR film surface. This can be suppressed or prevented.
- the shape of the pattern edge portion of the DBR film configuration has a slope shape with a thinner film thickness toward the tip side having a cross-sectional taper angle of 15 to 45 degrees, the vapor deposition film at the pattern edge portion of the DBR film is formed. The coverage is good and the occurrence of disconnection can be prevented.
- FIG. 5C is a cross-sectional view of a main part for explaining a photo-registry shift-off process in the semiconductor light-emitting element
- FIG. 5D is a metal reflective film photoresist in the semiconductor light-emitting element
- FIG. 5E is a fragmentary cross-sectional view for explaining a metal reflective film deposition step in the semiconductor light emitting device.
- (A) is principal part sectional drawing for demonstrating the photoresist pattern formation process for DBR film
- (b) is for demonstrating the DBR film
- (C) is principal part sectional drawing for demonstrating the photo resist ftoff process in the semiconductor light-emitting device. It is an expanded sectional view of the slope shape part of the edge part of the DBR film in the semiconductor light emitting element of this Embodiment 5.
- FIG. 1 is a longitudinal sectional view showing an example of the configuration of the main part of a face-down light emission type semiconductor light emitting device according to Embodiment 1 of the present invention.
- a semiconductor light emitting device 1 constituting a light emitting diode device as a semiconductor device according to the first embodiment has a high refractive index as a distributed Bragg reflection film on a next generation flip chip of a face-down light emission method.
- a DBR film 7 reflection film configuration
- TiO 2 film a film
- a light emitting structure 3 is provided on a transparent insulator substrate 2 such as sapphire.
- the light emitting structure 3 includes an active layer 33 that emits light between the first conductive semiconductor layer 31 (N-type cladding layer) and the second conductive semiconductor layer 32 (P-type cladding layer).
- the surface part of the light emitting structure 3 is configured to be uneven, and the transparent electrode film 4 made of an ITO film is provided on the surface of the flat part on the convex side.
- a p-electrode pad 5 is provided on a part of the surface of the transparent electrode film 4, and an n-electrode is formed on a part of a partly exposed surface (concave part) of the first conductive type semiconductor layer 31 in the light emitting structure 3.
- a pad 6 is provided.
- a DBR film 7 having a reflective film structure that forms a distributed Bragg reflective film is formed.
- a predetermined voltage is applied between the p-electrode pad 5 and the n-electrode pad 6 with the p-electrode pad 5 as a positive electrode and the n-electrode pad 6 as a negative electrode, and a predetermined voltage is applied to the light emitting structure 3.
- the light emitted from the active layer 33 of the light emitting structure 3 is transmitted from the active layer 33 through the transparent insulator substrate 2 and emitted as light emission A from the back side of the substrate, and reflected from the active layer 33 by the DBR film 7. Then, the light passes through the transparent insulator substrate 2 and is emitted as reflected light B from the back surface side of the substrate, and almost all light emission is emitted downward from the back surface of the transparent insulator substrate 2.
- the high refractive index film (TiO 2 film) is hardly etched with respect to BHF and does not decrease in film thickness, and has acid resistance and water resistance (moisture does not pass inside).
- the TiO 2 film is used as the final film of the DBR film 7, the internal SiO 2 film is protected from acid, moisture, etc. by the TiO 2 film.
- the DBR film 7 is formed by repeatedly forming a plurality of pairs of a low refractive index film of the first material layer and a high refractive index film of the second material layer.
- a high refractive index film (deposited TiO 2 film) is continuously formed to prevent erosion. This has a number of layers in the range of 4 to 50 layers.
- the high refractive index film (on the low refractive index film (deposited SiO 2 film))
- a high refractive index film (deposited as a final film) is formed on a low refractive index film (deposited SiO 2 film) in which one or more pairs of a deposited TiO 2 film and a low refractive index film (deposited SiO 2 film) are repeatedly formed.
- a TiO 2 film is continuously formed to prevent erosion (for internal protection).
- the vapor deposition TiO 2 film which is a high refractive index film, is additionally continuously formed as the uppermost layer, which ends with the vapor deposition SiO 2 film of the low refractive index film which is reduced by acid. Since the upper surface of the deposited SiO 2 film of the DBR film 7 is covered with the deposited TiO 2 film of the final film, erosion (thickness reduction), moisture absorption and cracking of the DBR uppermost layer film in the etching process and cleaning process in the subsequent process Can be prevented.
- the DBR film 7 is employed in a next-generation flip chip as the face-down light emission type semiconductor light emitting device 1, and a high refractive index film (TiO 2 film) is formed on the uppermost layer of the DBR film 7.
- a high refractive index film TiO 2 film
- the DBR film configuration in which the high refractive index film (TiO 2 film) is formed on the uppermost layer of the DBR film 7 is not limited to this, and is also applied to a semiconductor light emitting device of a face-up light emission system. be able to. This will be described in detail in the second embodiment.
- FIG. 2 is a longitudinal sectional view showing a configuration example of a main part of a face-up light emitting type semiconductor light emitting device according to Embodiment 2 of the present invention.
- a semiconductor light emitting element 1A that constitutes a light emitting diode element as a semiconductor device according to the second embodiment is a DBR in which the uppermost layer is a high refractive index film (TiO 2 film) as a face-up light emitting semiconductor chip.
- the film 7A is employed on the back side of the substrate.
- a light emitting structure 3 is provided on a transparent insulator substrate 2 such as sapphire.
- the light emitting structure 3 includes an active layer 33 that emits light between the first conductive semiconductor layer 31 (N-type cladding layer) and the second conductive semiconductor layer 32 (P-type cladding layer).
- the surface part of the light emitting structure 3 is configured to be uneven, and the transparent electrode film 4 made of an ITO film is provided on the surface of the flat part on the convex side.
- a p-electrode pad 5 A including a reflective layer on the bottom surface is provided on a part of the surface of the transparent electrode film 4, and a part of the partly exposed surface of the first conductive type semiconductor layer 31 in the light emitting structure 3 is provided.
- n-electrode pad 6A including a reflective layer on the bottom surface are provided with an n-electrode pad 6A including a reflective layer on the bottom surface.
- a DBR film 7 ⁇ / b> A is formed on the back side of the transparent insulator substrate 2.
- a predetermined voltage is applied to the light emitting structure 3 between the p-electrode pad 5A and the n-electrode pad 6A, with the p-electrode pad 5A serving as a positive electrode and the n-electrode pad 6A serving as a negative electrode.
- the light emitted from the active layer 33 of the light emitting structure 3 passes through the transparent electrode film 4 from the active layer 33 and is emitted as light emission A from the surface side, and the light from the active layer 33 is a transparent insulator substrate. 2 is reflected by the DBR film 7A on the back surface of the substrate 2 and is emitted as reflected light B from the substrate surface side.
- the other light is reflected to the DBR film 7A side by the reflection layers on the bottom surfaces of the p-electrode pad 5A and the n-electrode pad 6A, and the light emitted from almost all the active layer 33 is emitted upward from the substrate surface side.
- the TiO 2 film of the high refractive index film is hardly etched with respect to BHF and does not reduce the film, and has acid resistance and water resistance (moisture does not pass inside).
- the TiO 2 film is used as the final film of the DBR film 7A, the internal SiO 2 film is protected from acid, moisture, and the like by the TiO 2 film.
- the DBR film 7A is configured such that a plurality of pairs of a low refractive index film of the first material layer and a high refractive index film of the second material layer are repeatedly formed.
- the multilayer reflective film of the DBR film 7A has a number of layers in the range of 4 to 50 layers.
- the high refractive index film (deposited TiO 2 film) is formed on the low refractive index film (deposited SiO 2 film).
- the low refractive index film (deposited SiO 2 film) pairs one or more pairs repeating the formed low refractive index film (deposited SiO 2 film) high refractive index film as the final film (deposited TiO 2 film) Is continuously formed to prevent erosion.
- a vapor deposition TiO 2 film which is a high refractive index film, is additionally continuously formed at the end of the vapor deposition SiO 2 film, which is originally a low refractive index film that is reduced by acid as the uppermost layer. Since the upper surface of the deposited SiO 2 film in the DBR film 7A is covered with the final deposited TiO 2 film, erosion (thickness reduction), moisture absorption and cracking of the DBR top layer film in the etching process and cleaning process in the subsequent process Can be prevented.
- the light emitted from the active layer 103c is blocked by the p-electrode pad 105 and the n-electrode pad 106 and the light extraction efficiency is increased. Decreases.
- the light emitted from the active layer 33 is blocked by the p-electrode pad 5A and the n-electrode pad 6A.
- the electrode pad 5A and the n-electrode pad 6A include a reflection layer on the bottom surface thereof, the light emitted from the active layer 33 is reflected on the bottom surface by the reflection layer on the DBR film 7A side, and further on the device upper side by the DBR film 7A. Therefore, the light extraction efficiency is better than the conventional one.
- the semiconductor light emitting device 1 of the face-down light emission method of the first embodiment the light emitted from the active layer 33 is reflected by the DBR film 7 on the p-electrode pad 5 and n-electrode pad 6 side, and the device Since the light is emitted from the back surface, the p-electrode pad 5 and the n-electrode pad 6 do not block light.
- the face-down next-generation semiconductor light emitting device 1 flip chip that emits light downward in the device, the conventional light-emitting diode chip 100 of the face-up light emission method and the face-up light emission of the second embodiment are used.
- the semiconductor light emitting device 1A of the type Compared with the semiconductor light emitting device 1A of the type, light is not blocked by the p-electrode pads 5 and 5A and the n-electrode pads 6 and 6A, so that the light extraction efficiency can be improved. Further, the p-electrode pad 5A and the n-electrode pad 6A each having a reflective film on the bottom side of the p-electrode pad 5 and the n-electrode pad 6 are used as the face-down type next-generation semiconductor light emitting device of the first embodiment. 1, the light extraction efficiency can be improved only by the amount reflected from the bottom surface of the p-electrode pad 5A and the n-electrode pad 6A toward the back side of the device.
- the DBR film 7 is adopted for the semiconductor light emitting device 1 of the face-down light emission method
- the DBR film 7A is adopted for the semiconductor light-emitting device 1A of the face-up light emission method in the second embodiment.
- the high refractive index film TiO 2 film
- the present invention is not limited to this, and the high refractive index is applied to the uppermost layer of the DBR films 7 and 7A (reflection film).
- FIG. 3 is a longitudinal sectional view showing an example of the configuration of the main part of a semiconductor light emitting device constituting a semiconductor laser device according to Embodiment 3 of the present invention.
- the semiconductor light emitting device 1 ⁇ / b > B constituting the semiconductor laser device as the semiconductor device of Embodiment 3 employs a DBR film 7 ⁇ / b > B whose uppermost layer is a high refractive index film (TiO 2 film) on the side surface of the active layer 133. ing.
- a light emitting structure 13 is provided on an N-type semiconductor substrate 12.
- the light emitting structure 13 includes an active layer 133 that emits light between the first conductive semiconductor layer 131 (N-type cladding layer) and the second conductive semiconductor layer 132 (P-type cladding layer).
- An upper P electrode film 15 is provided on the second conductivity type semiconductor layer 132 (P type clad layer), and a lower N electrode film 16 is provided on the back side of the N type semiconductor substrate 12.
- DBR films 7B are formed on the four side surfaces of the active layer 133. Of the four side surfaces of the active layer 133, only the laser light emission surface is different in the reflection film configuration of the DBR film 7B and the thickness of the configuration so that the laser light can be easily emitted.
- a predetermined voltage is applied between the upper P electrode film 15 and the lower N electrode film 16 with the upper P electrode film 15 as a positive electrode and the lower N electrode film 16 as a negative electrode, and a predetermined voltage is applied to the light emitting structure 13.
- the light emitted from the active layer 133 of the light emitting structure 13 is emitted as laser light from the DBR film 7B on the laser light emitting surface side after resonating between the opposing DBR films 7B in the active layer 133.
- the TiO 2 film of the high refractive index film is hardly etched with respect to BHF and does not reduce the film, and has acid resistance and water resistance (moisture does not pass inside).
- the TiO 2 film is used as the final film of the DBR film 7B, the internal SiO 2 film is protected from acid, moisture, and the like by the TiO 2 film.
- the DBR film 7B is configured such that a plurality of pairs of a low refractive index film of the first material layer and a high refractive index film of the second material layer are repeatedly formed.
- the multilayer reflective film of the DBR film 7B has a number of layers in the range of 4 to 50 layers.
- a high refractive index is formed on the low refractive index film (deposited SiO 2 film).
- a (deposited TiO 2 film) is continuously formed to prevent erosion.
- a vapor deposition TiO 2 film which is a high refractive index film, is additionally continuously formed at the end of the vapor deposition SiO 2 film, which is originally a low refractive index film that is reduced by acid as the uppermost layer. Since the upper surface of the deposited SiO 2 film in the DBR film 7B is covered with the final deposited TiO 2 film, erosion (thickness reduction), moisture absorption, and cracking of the DBR uppermost layer film in the etching process and cleaning process in the subsequent process Can be prevented.
- a DBR film 7, 7A or 7B having a high refractive index film (TiO 2 film) formed on the uppermost layer is applied to a light-emitting diode element or a semiconductor laser element as a semiconductor light-emitting element.
- a metal reflection film 8 such as an Al film is further provided on the DBR film 7, 7A or 7B to further improve the reflection efficiency. May be. This will be described in detail in the following fourth and subsequent embodiments.
- a high refractive index film (TiO 2 film) is formed on the uppermost layer like the DBR film 7 (reflective film) of the first embodiment, and a metal reflective film is formed on the DBR film 7.
- a high refractive index film TiO 2 film
- a metal reflective film is formed on the DBR film 7.
- the two-layer reflection film structure of the DBR film having a high reflection characteristic and the metal reflection film can be applied to the first to third embodiments to obtain a high reflection characteristic. That is, it is possible to further improve the reflection efficiency by providing a metal reflection film such as an Al film on the DBR film 7, 7A or 7B of the first to third embodiments to form a two-layer reflection film structure.
- the two-layer reflective film structure of the DBR film 7 and the metal reflective film is applied to the face-down light emission type semiconductor light emitting device 1 of the first embodiment, it is formed on the end of the DBR film 7.
- the metal reflection which will be described later on the DBR film 7C which will be described later with reference to FIG. 4 in which the end of the DBR film 7 is tapered (slope shape) by vapor deposition by a lift-off process method.
- the film 8 is formed will be described in detail below.
- FIG. 4 is a longitudinal sectional view showing a configuration example of a main part of a semiconductor light emitting element of face-down light emission type in Embodiment 4 of the present invention.
- a semiconductor light emitting element 1C constituting a light emitting diode element as a semiconductor device according to the fourth embodiment is a face-down light emission type next-generation flip chip, and a high refractive index film (TiO 2 film) as the uppermost layer.
- a metal reflective film 8 such as an Al film on the DBR film 7C.
- the pattern end of the DBR film 7C is formed in a tapered shape on the light emitting structure 3C and the transparent electrode film 4 of the semiconductor light emitting element 1C of the fourth embodiment by a lift-off process method.
- the shape of the pattern edge portion (end portion) of the DBR film configuration has a slope shape in which the film thickness is thinner toward the tip side having a cross-sectional taper angle of 15 to 45 degrees.
- the DBR pattern edge portion formed by the lift-off process is formed into a gentle slope shape having a predetermined taper angle, so that the light emitting structure 3C and the DBR film 7C formed on the transparent electrode film 4 and the light emitting structure thereof are formed. It is possible to prevent the metal reflective film 8 on the body 3 ⁇ / b> C and the transparent electrode film 4 from undergoing a sudden change due to the film thickness and causing a break at the change position of the metal reflective film 8.
- the two-layer reflection film structure of the DBR film 7C and the metal reflection film 8 of the fourth embodiment can obtain higher reflection characteristics than the conventional single-layer reflection film structure of the DBR film or the metal reflection film. Can do.
- Plasma cleaning of the underlying film is performed using an ion gun before and during the formation of the DBR film structure of the DBR film 7C.
- the metal reflective film 8 is formed on the DBR film 7C by metal vapor deposition, pre-deposition surface treatment is performed. This time, the uppermost film of the DBR film 7C is a TiO 2 film, so that plasma or wet etching is used. Resistant to conventional deposition surface treatment.
- the metal reflection film 8 made of Al material or the like is electrically connected to the light emitting structure 3C and the transparent electrode film 4 through the opening 9 of the DBR film 7C. Further, on the metal reflective film 8 on the opening 9 of the DBR film 7C, electrode portions such as a p-electrode pad 5 and an n-electrode pad 6A (not shown) are formed in a predetermined shape, and this is a metal reflective film.
- the light emitting structure 3 ⁇ / b> C or the transparent electrode film 4 is electrically connected via 8.
- the semiconductor light emitting device 1C of the face-down light emission type according to the fourth embodiment which is a method for manufacturing a two-layer reflection film structure of the DBR film 7C and the metal reflection film 8 thereon, will be described in detail.
- FIG. 5A is a cross-sectional view of a main part for explaining a DBR film photoresist pattern forming step in the semiconductor light emitting device 1C of Embodiment 4, and FIG. 5B is a DBR film deposition in the semiconductor light emitting device 1C.
- FIG. 5C is a cross-sectional view of a main part for explaining the steps
- FIG. 5C is a cross-sectional view of a main part for explaining a photo-registry shift-off process in the semiconductor light emitting device 1C
- FIG. FIG. 5E is a fragmentary cross-sectional view for explaining the metal reflective film deposition step in the semiconductor light emitting device 1C.
- FIG. 5A is a cross-sectional view of a main part for explaining a DBR film photoresist pattern forming step in the semiconductor light emitting device 1C of Embodiment 4
- FIG. 5B is a DBR film deposition in the semiconductor light emitting device 1C.
- FIG. 5C is a cross-
- a multilayer DBR film 7C having a reflective function is formed using the patterned photoresist 10 as a mask.
- a multi-layer DBR film is also formed on the photoresist 10.
- the DBR film 7C is formed by repeatedly forming a plurality of pairs of a deposited SiO 2 film of the first material layer and a deposited TiO 2 film of the second material layer.
- a vapor deposition TiO 2 film is continuously vapor deposited to prevent erosion as the uppermost layer (CAP layer) of the DBR film 7C.
- the end portion of the DBR film 7C is formed in a slope shape having a gentle taper angle in which the film thickness becomes thinner toward the end portion. This cross-sectional taper angle is about 15 to 45 degrees.
- plasma cleaning of the base film is performed using an ion gun before and during the formation of the DBR film 7C.
- the end portion of the DBR film 7C is formed in a slope shape around the periphery of the photoresist 10 by DBR vapor deposition, and thereafter, FIG.
- the photoresist 10 is removed as shown in the photo-registry lift-off process of c), a part of the light emitting structure 3C and the transparent electrode film 4 under the photoresist 10 can be exposed.
- the transparent electrode film 4 and the DBR film 7C are patterned to form a bowl-like cross-sectional shape with a taper on the lower inner side for metal reflective film deposition, thereby forming a photoresist 10A.
- a surface treatment using a wet process or a plasma irradiation process is performed as a pre-deposition process of the metal reflective film 8.
- the light emitting structure is formed using the photoresist 10A patterned in a bowl-like cross-sectional shape having a taper inside the lower part for the metal reflective film as a mask.
- a metal reflective film 8 is deposited on 3C and the transparent electrode film 4 by vapor deposition.
- the metal reflection film 8 is also formed on the photoresist 10A.
- the end portion of the DBR film 7C has a slope shape in which the film thickness is thinned, step breakage that occurs in the metal reflective film 8 from the light emitting structure 3C or the transparent electrode film 4 to the DBR film 7C is prevented. be able to.
- the taper angle 15 to 45 degrees of the DBR film 7C is smaller than the taper angle 60 degrees at which the step breakage may occur, even if the metal reflective film 8 is formed on the slope shape of the DBR film 7C, the step breakage is not caused. Occurrence does not occur.
- the resist pattern on the entire surface is formed in a cross-sectional shape by a lift-off process, and a slope shape is formed at the tip of the DBR film 7C. Then, the DBR film 7C and its A metal reflective film 8 is formed on the light emitting structure 3C and the transparent electrode film 4 of the underlayer. Thereafter, the photoresist 10A is removed as shown in the photo-registry shift-off process of FIG. In the lift-off process, the photoresist 10, 10A is present when the photoresist 10, 10A is removed after the deposited film is deposited on the underlying layer using the photoresist 10, 10A with a ridge as a mask. The underlying film is exposed.
- the DBR film forming method uses a plasma cleaning process in which the surfaces of the light emitting structure 3C and the transparent electrode film 4 are plasma-cleaned by using an ion gun, and an ion gun, when ion plasma is used before the DBR film 7C is deposited. And a DBR vapor deposition film forming step of forming a DBR film 7C on the surface of the light emitting structure 3C and the transparent electrode film 4 that have been plasma cleaned. In this way, after removing organic substances, moisture, and other contaminants on the surfaces of the light emitting structure 3C and the transparent electrode film 4 from the surfaces by plasma cleaning, the DBR film 7C is formed on the light emitting structure 3C and the transparent electrode film 4 with each other. Formed on the surface.
- the manufacturing method of the semiconductor light emitting element 1C constituting the face down light emitting type light emitting diode element as the semiconductor device of the fourth embodiment is such that the resist pattern 10 is formed in a cross-sectional shape and then the DBR film 7C is formed.
- a slope shape having a cross-section taper angle of 15 to 45 degrees is formed around the edge of the resist pattern 10 by DBR vapor deposition at the end, and a lift-off process is performed to remove the resist pattern 10.
- an Al film or the like is formed on the DBR film structure and its underlying layer (the light emitting structure 3C and the transparent electrode film 4) by metal film deposition using the lift-off process.
- the two-layer reflective film structure of the DBR film 7C and the metal reflective film 8 is formed.
- the light emitted from the active layer of the light emitting structure 3C is all reflected downward by the DBR film 7C and the metal reflective film 8 on the DBR film 7C. Chip) can be manufactured.
- the high refractive index film (TiO 2 film) is formed as the uppermost layer of the DBR film 7C, and the DBR film 7C itself is acid-resistant and formed by the high refractive index film (TiO 2 film). Has moisture resistance.
- the uppermost layer originally ends with the SiO 2 film because of the reflection characteristics.
- the TiO 2 film is continuously added as the high refractive index film.
- the DBR end portion of the DBR film 7C is formed in a low taper slope shape by vapor deposition using a lift-off process technique.
- the taper angle of the cross section has a slope shape with a thinner film thickness at the tip side of an angle of 15 to 45 degrees.
- the upper metal reflective film 8 is formed. No breaks occur in Thereby, a multilayer structure of the DBR pattern and the metal reflective film 8 thereon can be easily formed. As a result, it is possible to obtain a higher reflection characteristic by using the DBR film 7C of the fourth embodiment and the metal reflection film 8 of the double-layer reflection film structure than the conventional DBR film or the single-layer reflection film structure of the metal reflection film. .
- FIG. 6A is a cross-sectional view of a main part for explaining a DBR film or metal reflective film photoresist pattern forming step in a conventional semiconductor light emitting device
- FIG. 6B is a DBR film or metal reflective film deposition step
- FIG. 6C is a fragmentary cross-sectional view for explaining a photo-resistive shift-off process in the semiconductor light emitting device.
- a resist pattern formed on the entire surface of the light emitting structure 3C and the transparent electrode film 4 is formed in a cross-sectional shape by a lift-off process to form a DBR film.
- the end of the DBR film or the metal reflective film 14 is formed in a slope shape around the periphery of the photoresist 11 by vapor deposition, and then the photoresist is turned off.
- the photoresist 11 is removed in the process, the surface of the base film such as the light emitting structure 3C and the transparent electrode film 4 under the photoresist 11 can be exposed.
- the single-layer reflective film structure of the DBR film or the metal reflective film 14 has been conventionally used. Compared to this, the two-layer reflection film structure of the DBR film 7C and the metal reflection film 8 as in the fourth embodiment can obtain higher reflection characteristics.
- the end of the DBR film or the metal reflective film 14 is deposited in a slope shape by a lift-off process, but the cross-sectional taper angle is 60 degrees or more, and this is the upper layer.
- the metal reflective film 8 is formed, the metal reflective film 8 is disconnected.
- a taper that may cause a step break is generated by setting the slope-shaped cross-section taper angle at the end of the DBR film 7C to an angle of 15 to 45 degrees using a lift-off process. It is shaped more gently than the angle of 60 degrees. As a result, disconnection of the metal reflective film 8 on the upper end of the DBR film 7C can be reliably prevented.
- the two-layer reflection film structure of the DBR film 7C and the metal reflection film 8 can be easily formed with high quality as in the fourth embodiment, and higher reflection characteristics can be obtained by this two-layer reflection film structure.
- Can do. (Embodiment 5)
- a high refractive index film (TiO 2 film) is formed on the uppermost layer of the DBR film 7C (reflective film), and a metal reflective film 8 is formed on the DBR film 7 and the metal reflective film.
- the DBR film structure of the DBR film is formed by repeatedly forming one or more pairs of vapor-deposited SiO 2 film and vapor-deposited TiO 2 film.
- the uppermost layer is a deposited SiO 2 film, while the uppermost layer is a high refractive index film (deposited TiO 2 film) to prevent erosion while maintaining high reflectivity.
- deposited TiO 2 film deposited TiO 2 film
- FIG. 7 is an enlarged cross-sectional view of the slope-shaped portion at the end of the DBR film 7D in the semiconductor light emitting device 1D according to the fifth embodiment.
- the deposited SiO 2 film has a thickness of 100 to 600 nm and reaches the tip.
- the deposited TiO 2 film is formed on the deposited SiO 2 film so as to be thin, and the deposited TiO 2 film is formed in a tapered shape having a film thickness of 30 to 90 nm and becomes thinner at the tip, and the deposited SiO 2 film is formed on the deposited TiO 2 film.
- the tip is formed in a tapered shape with a thickness of 30 to 90 nm, and the deposited TiO 2 film is formed on the deposited SiO 2 film in a tapered shape with a thickness of 30 to 90 nm and becomes thinner at the tip.
- depositing SiO 2 film on the TiO 2 film is formed on the thinning tapered as the tip portion at a film thickness of 30 ⁇ 90 nm, as a final layer, it is deposited TiO 2 film on the deposition SiO 2 film 1nm
- the taper angle of the total is in the 15 to 45 degrees.
- the DBR film 7D having the reflective film structure is composed of a low refractive index film (deposited SiO 2 film) / high refractive index film (deposited TiO 2 film) / low refractive index film (deposited SiO 2 film).
- a low refractive index film deposited SiO 2 film
- high refractive index film deposited TiO 2 film
- low refractive index film deposited SiO 2 film
- a low refractive index film pairs one or more repeated high refractive index film as the final layer on the uppermost low refractive index film formed (deposited SiO 2 film) (deposited TiO 2 film ) Is continuously deposited to prevent erosion.
- a TiO 2 film having a high refractive index film which is superior in moisture resistance and acid resistance than the SiO 2 film and hardly eroded by an etching solution such as HF or BHF is formed on the uppermost layer of the DBR film 7D. is doing. At this time, the TiO 2 film is formed into a thin film (film thickness: 1 to 13 nm) so that the reflectance characteristics are not deteriorated as compared with the conventional film structure.
- the final film of the DBR film 7D uses a SiO 2 film in order to improve the reflectivity.
- the fifth embodiment while maintaining the reflectivity, there is acid resistance and water resistance. It is verified whether a TiO 2 film having a high refractive index film can be provided.
- the film thickness of the additional TiO 2 film of the uppermost layer is 1 to 5 nm (the film thickness of 0 corresponds to the case where there is no additional TiO 2 film), the vertical direction and the tilt direction (angle 15 degrees) ) Both had the best reflectivity of 95% or more. Further, when the thickness of the additional TiO 2 film of the uppermost layer is 5 to 10 nm, the reflectance is good at 92% or more in both the vertical direction and the tilt direction, but the thickness of the TiO 2 film is 1 to 5 nm. The reflectivity was somewhat lower than in the case.
- the reflectance is good at 90% or more in both the vertical direction and the tilt direction, but when the film thickness of the TiO 2 film is 5 to 10 nm.
- the reflectivity was slightly lower than that of.
- the film thickness of the uppermost additional TiO 2 film exceeds 14 nm, the reflectance decreases in both the vertical direction and the tilt direction from 90%, and the film thickness of the uppermost additional TiO 2 film starts from 15 nm. Went down sharply.
- the reflectance becomes 90% or more.
- the thickness of the additional TiO 2 film of the uppermost layer is 5 nm, the reflectivity is about 95%, and even when the thickness of the additional TiO 2 film of the uppermost layer is 1 nm, the reflectivity is 95% and there is not much change.
- the thickness of the additional TiO 2 film is set to about 5 nm ( ⁇ 1 nm) here.
- the reflectivity can be set to about 95 percent.
- the film thickness of the uppermost TiO 2 film having the number of DBR6 layers or more is set to about 5 nm ( ⁇ 1 nm), about 88 nm of the next period, and further about 188 nm of the next period, it is highly reflective. Erosion prevention (acid resistance) can be best achieved with the rate maintained.
- the DBR film structure of the DBR film 7D is formed by repeatedly forming one or more pairs of vapor-deposited SiO 2 film and vapor-deposited TiO 2 film.
- the upper layer is a vapor-deposited SiO 2 film, and the uppermost layer is a thin film of a high refractive index film (for example, vapor-deposited TiO 2 film) having a film thickness of 1 to 13 nm to prevent erosion while maintaining high reflectivity.
- the DBR end portion is tapered (slope shape, where the cross-sectional taper angle is 15 to 45 degrees) by vapor deposition film formation by a lift-off process method.
- a first-layer metal reflection film 8 serving as a metal reflection film and electrode wiring film is provided thereon.
- a thin film (thickness 1 to 13 nm) of a vapor deposition TiO 2 film having a high refractive index is formed on the uppermost layer of the DBR film 7D, and the DBR film 7D is maintained at a high level while maintaining the required reflectance characteristics. 7D itself has acid resistance and moisture resistance. Further, when the pattern of the DBR film 7D is formed on the device, the DBR end is formed into a low taper slope shape (cross section taper angle of 15 to 45 degrees) by vapor deposition film formation by a lift-off process method. Further, a high reflective property is obtained by forming a metal reflective film 8D on the film without any step.
- the TiO 2 film is formed as a high refractive index thin film (film thickness: 1 to 13 nm) where the uppermost layer originally ends with the SiO 2 film because of the reflection characteristics.
- the upper metal reflection film 8D is not stepped. As a result, a multilayer structure of the DBR film 7D and the metal reflective film 8D thereon can be easily formed.
- the uppermost layer of the DBR film 7D is a thin film of a high refractive index film (deposited TiO 2 film) having a film thickness of 1 to 13 nm, and a metal reflection is formed thereon.
- a slope shape cross-section taper angle of 15 to 45 degrees
- the present invention is not limited to this.
- the metal reflection film 8D is provided on the DBR film 7D or the metal reflection on the DBR film 7D.
- the uppermost layer of the DBR film of the fifth embodiment is limited to a thin film of a high refractive index film (deposited TiO 2 film) having a film thickness of 1 to 13 nm to maintain high reflectivity. Can do. (Embodiment 6)
- the case where the uppermost layer of the DBR film 7D is a thin film of a high refractive index film (evaporated TiO 2 film) having a film thickness of 1 to 13 nm will be described.
- the evaporated TiO 2 film has the smallest film thickness of 5 nm.
- a two-layer reflection film structure including a DBR film 7E and a metal reflection film 8E having a lower Ni film, and a DBR film are described.
- a two-layer reflection film structure of 7E and a metal reflection film 8E ′ having no lower Ni film will be described.
- FIG. 8 shows the reflectance measurement in the case where the reflectance measurement test is performed on each of the two-layer reflective film structures of the DBR film 7E and the metal reflective films 8E and 8E ′ in the semiconductor light emitting devices 1E and 1E ′ of the sixth embodiment. It is a schematic diagram which shows the lamination
- the sample for the reflectance measurement test of the two-layer reflective film structure in the semiconductor light emitting device 1E of the sixth embodiment is SiO 2 film / TiO 2 film / SiO 2 film / TiO 2 film / on a transparent sapphire substrate.
- a sample for the reflectance measurement test of the two-layer reflective film structure in the semiconductor light emitting device 1E ′ of the sixth embodiment has a SiO 2 film / TiO 2 film / SiO 2 film / TiO 2 film / SiO 2 on a transparent sapphire substrate. and 2 film / ⁇ ⁇ ⁇ TiO 2 film DBR6 or more layers number of DBR layer 7E, 1st metal reflective layer 8E 'on DBR film 7E and (Ni; stack of 30 ⁇ 100nm; 0nm / Al) Have.
- the semiconductor light emitting device 1E includes a DBR film 7E and a metal reflective film 8E ′ provided with only a second Al layer without providing a thin Ni film.
- the film thickness of the uppermost TiO 2 film of the DBR6 layer is 1 to 13 nm, in this case, 5 nm.
- the reflectance for the measurement wavelength when the film thickness is 88 nm thick curve B
- the film thickness of the uppermost TiO 2 film is 5 nm of 1 to 13 nm.
- the reflectance is lowered to 40% or less at a measurement wavelength of 450 nm, but the reflectance is about 40 to 50 percent in a wide range of other measurement wavelengths of 400 to 700 nm.
- FIG. 9 shows a case where the lower layer Ni film thickness of the first metal reflective film 8E ′ is 0 nm and the uppermost TiO 2 film of the DBR6 layer is 5 nm in the reflectance measurement test of FIG. 8 (curve C). It is a figure which shows the reflectance with respect to the measurement wavelength when it carries out by the film thickness of 88 nm thick one period (curve E).
- a curve C in the case where the lower layer Ni film thickness of the first metal reflective film 8E ′ is 0 nm and the uppermost TiO 2 film of the DBR6 layer is 5 nm is shown in FIG.
- the reflectivity of curve E drops to 40%. The percentage has been improved. Therefore, when the thickness of the lower Ni layer of the first metal reflective film is 0 nm and the thickness of the uppermost TiO 2 film of the DBR6 layer is 5 nm, the thickness of the TiO 2 film is one cycle thicker than 88 nm.
- the reflectance at the measurement wavelength of 600 nm is greatly improved by 52% as compared with the case where the measurement is performed, and the wavelength bandwidth of the reflectance of 90% or more is greatly expanded to 243 nm.
- FIG. 10 shows the case where the lower layer Ni film thickness of the first metal reflective film 8E is 3 nm and the uppermost TiO 2 film of the DBR6 layer is 5 nm in the reflectance measurement test of FIG. It is a figure which shows the reflectance with respect to the measurement wavelength in the case of carrying out by the thick film thickness of 88 nm (curve F).
- a curve D in the case where the lower layer Ni film thickness of the first metal reflective film 8E is 3 nm and the uppermost TiO 2 film of the DBR6 layer is 5 nm is shown in FIG.
- the Ni film thickness of the lower layer of the reflective film is 3 nm and the thickness of the TiO 2 film as the uppermost layer of the DBR6 layer is 1 cycle thick
- the reflectance of the curve F drops to 27%. The percentage has been improved. Accordingly, when the thickness of the lower Ni layer of the first metal reflective film 8E is 3 nm and the thickness of the uppermost TiO 2 film of the DBR6 layer is 5 nm, the thickness of the TiO 2 film is increased to 88 nm, which is one cycle thicker.
- the reflectance at the measurement wavelength of 600 nm is greatly improved by 62%, and the wavelength bandwidth of the reflectance of 90% or more is greatly expanded to 177 nm.
- the thickness of the TiO 2 film as the uppermost layer of the DBR6 layer is approximately equal to 90% or more when the film thickness is 5 nm and the film thickness is 88 nm thick.
- the DBR film having the uppermost TiO 2 film having a thickness of 5 nm is thicker by one period than the uppermost TiO 2 film.
- the wavelength bandwidth having a reflectance of 90% or more is wider than that of the 88 nm DBR film, and the wavelength bandwidth having a reflectance of 90% or more of 400 to 600 nm can be secured, and the wavelength bandwidth is excellent.
- the reflectivity without the metal reflective films 8E and 8E ′ itself is about 50% when the thickness of the uppermost TiO 2 film is 5 nm. If the metal reflection films 8E and 8E ′ are not arranged on the top, high reflectance cannot be secured.
- Curve C in the case where the thickness of the uppermost TiO 2 film of the DBR6 layer is 5 nm and the lower Ni thickness of the first metal reflective film 8E ′ is 0 nm is, for example, when the measurement wavelength is 450 nm, the uppermost TiO2 layer of the DBR6 layer
- the reflectance is improved by 3.6% compared to the curve D when the thickness of the two films is 5 nm and the thickness of the lower Ni layer of the first metal reflective film 8E is 3 nm. In short, the reflectance is better when there is no lower Ni film thickness.
- the curve E shows the TiO2 of the uppermost layer of the DBR6 layer at a measurement wavelength of 450 nm, for example.
- the reflectance is improved by 3.2% compared to the curve F when the thickness of the two films is 88 nm and the thickness of the lower Ni layer of the first metal reflective film is 3 nm. Also in this case, the reflectance is better when there is no lower Ni film thickness.
- these curves E and F have a measurement wavelength of 600 nm and reflectivity drops to 27% and 41%.
- the case where the lower Ni film thickness of the first metal reflective film is 0 nm is the case where the lower Ni film thickness is 3 nm (curves D and F).
- the reflectance is higher (the measurement wavelength is about 3 to 4 percent at 450 nm), and the wavelength bandwidth with a reflectance of 90 percent or more is also greatly expanded.
- the reflection characteristic is better when the lower Ni film thickness of the first metal reflective film is not present, but the adhesion between the electrodes of the DBR film 7E and the first metal reflective film 8E is better when the lower Ni film thickness is present.
- electrode peeling does not occur when there is no lower Ni film thickness, it is more reliable that there is a lower Ni film thickness for electrode adhesion.
- the following effects can be obtained by reducing the thickness of the TiO 2 film of the sixth DBR layer (uppermost layer) from 88 nm to 5 nm.
- a drop in reflectance waveform at a wavelength of 600 nm is eliminated. This improved the reflectivity from 27% to 89% when the lower Ni film thickness was 3 nm.
- the bandwidth of the reflectivity of the TiO 2 film is wider than 88 nm, and the reflectivity of 90% or more is secured in the wavelength band of 415 to 592 nm (when the lower layer Ni film thickness is 3 nm). did it.
- the thickness value of the lowermost Ni film of the 1st metal reflection film 8E is 3 nm to 0 nm (1st metal reflection film 8E ′).
- the reflectivity is improved substantially over the entire measurement wavelength region, the reflectivity at a wavelength of 450 nm is improved from 91.9% to 95.5%, and the reflectivity is improved by 3.6% (TiO2 in the DBR layer 6) When the thickness of the two films is 5 nm).
- the wavelength bandwidth with a reflectance of 90% or more is expanded when the film thickness value of the lowermost layer Ni film is 0 nm than when the film thickness value of the lowermost layer Ni film is 3 nm. For example, when the thickness of the TiO 2 film of the sixth DBR layer is 5 nm, the wavelength band 415 to 592 nm is expanded to the wavelength band 394 to 637 nm.
- the semiconductor light emitting elements 1, 1A to 1E, 1E ′ and the manufacturing method thereof have been described.
- the present invention is not limited thereto, and any semiconductor device and manufacturing method thereof may be used.
- a semiconductor in which any of the DBR films 7, 7A to 7E is formed, and at least one of the first-layer metal reflective films 8, 8D, 8E, 8E ′ is formed thereon is just an apparatus and its manufacturing method.
- any of the DBR layer 7, 7A ⁇ 7E in the same manner as mentioned above, pairs pair of SiO 2 film of TiO 2 film and a low refractive index film of the high refractive index film on the SiO 2 film of the low refractive index film Alternatively, a TiO 2 film of a high refractive index film is continuously formed as a final film on the SiO 2 film of a low refractive index film formed repeatedly in pairs to prevent erosion.
- a first-layer metal reflective film corresponding to any one of the metal reflective films 8, 8D, 8E, and 8E ′ is formed thereon.
- the single-layer reflective film structure of the metal (Al) reflective film is compared with the double-layer reflective film structure of the DBR film 7E and the metal (Al) reflective film.
- the reflectance with respect to the measurement wavelength can be further improved.
- FIG. 11 shows a measurement wavelength in a single-layer reflection film structure of a metal reflection film and a two-layer reflection film structure of a DBR film 7E and metal (Al) reflection films 8E and 8E ′ in each semiconductor light emitting device of the sixth embodiment. It is a figure which shows the reflectance profile with respect to.
- the DBR film 7E and the two-layer reflecting film structures of the metal (Al) reflecting films 8E and 8E ′ are compared with the reflectance of the single-layer reflecting film structure of the metal (Al) reflecting films 8E and 8E ′.
- the reflectance is higher at a measurement wavelength of about 380 nm to 660 nm, and the bandwidth with a reflectance of 90% or more is wide as 243 nm (394 nm to 637 nm).
- the DBR film 7E is provided in the base layer of the single-layer reflective film structure of the metal (Al) reflective films 8E and 8E ′, the bandwidth having a reflectivity of 90% or more and a wide reflection of 243 nm (394 nm to 637 nm) is wide.
- the rate (percent) can be obtained.
- the photoresist in the lift-off process may be a photoresist film, or the size of the photoresist in plan view may be smaller than its thickness. Includes no shape.
- the material for the low refractive index film is SiO 2 and the material for the high refractive index film is TiO 2 has been described.
- the present invention is not limited to this, and the material for the low refractive index film is used.
- SiO 2 or SiO is used as the material, and any of TiO 2 , Ti 3 O 5 , Ti 2 O 3 , TiO, ZrO 2 , TiO 2 ZrO 2 Nb 2 O 5 , and Al 2 O 3 is used as the material for the high refractive index film. Can be used.
- the final film is a high refractive index film for preventing erosion in the field of semiconductor devices such as light emitting diode elements having a distributed Bragg reflection film and semiconductor light emitting elements such as semiconductor laser elements, and the manufacturing method thereof. Since the high-refractive index film for protection covers and protects the DBR film structure itself, the DBR film surface is eroded (thickness reduction) by the cleaning process or etching process in the subsequent process, or moisture is absorbed from the DBR film surface. Or the occurrence of cracks on the DBR film surface can be suppressed or prevented.
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
- Led Device Packages (AREA)
- Semiconductor Lasers (AREA)
Abstract
Description
beam epitaxy)技術を用いて形成してもよく、フォトリソグラフィおよびエッチング工程を用いて第1導電型半導体層103aの一部領域が露出するようにパターニングしてもよい。
2 透明な絶縁体基板
3、3C、3D 発光構造体
31 第1導電型半導体層31(N型クラッド層)
32 第2導電型半導体層32(P型クラッド層)
33 活性層
4 透明電極膜
5、5A p-電極パッド
6、6A n-電極パッド
7、7A~7E DBR膜
8、8D、8E,8E’ 金属反射膜(例えば金属(Al)反射膜)
9 DBR膜の開口部
10 DBR膜用のフォトレジスト
10A、11 金属反射膜用のフォトレジスト
12 N型半導体基板
13 発光構造体
131 第1導電型半導体層131(N型クラッド層)
132 第2導電型半導体層132(P型クラッド層)
133 活性層
14 DBR膜または金属反射膜
15 上部P電極膜
16 下部N電極膜
(実施形態1)
図1は、本発明の実施形態1におけるフェイスダウン光出射方式の半導体発光素子の要部構成例を示す縦断面図である。
(実施形態2)
図2は、本発明の実施形態2におけるフェイスアップ光出射方式の半導体発光素子の要部構成例を示す縦断面図である。
(実施形態3)
図3は、本発明の実施形態3における半導体レーザ素子を構成する半導体発光素子の要部構成例を示す縦断面図である。
(実施形態4)
本記実施形態4では、上記実施形態1のDBR膜7(反射膜)のように最上層に高屈折率膜(TiO2膜)を形成すると共に、DBR膜7上に金属反射膜を形成するDBR膜7と金属反射膜との2層反射膜構造により高反射特性を得る場合について説明する。
(実施形態5)
上記実施形態4では、DBR膜7C(反射膜)の最上層に高屈折率膜(TiO2膜)を形成すると共に、DBR膜7上に金属反射膜8を形成するDBR膜7と金属反射膜8との2層反射膜構造により高反射特性を得る場合について説明したが、本実施形態5では、DBR膜のDBR膜構造は蒸着SiO2膜と蒸着TiO2膜が1対または複数対繰り返し形成されるが、本来は高反射率を得るために最上層を蒸着SiO2膜としていたものを、高反射率を維持しつつ浸食防止のために最上層の高屈折率膜(蒸着TiO2膜)の膜厚を1~13nmの薄膜に限定する場合について説明する。
と低屈折率膜(蒸着SiO2膜)の対が一または複数繰り返し成膜された最も上の低屈折率膜(蒸着SiO2膜)上に最終膜として更に高屈折率膜(蒸着TiO2膜)が浸食防止用に連続蒸着成膜されている。
(実施形態6)
上記実施形態5では、DBR膜7Dの最上層を膜厚が1~13nmの高屈折率膜(蒸着TiO2膜)の薄膜とする場合について説明し、蒸着TiO2膜の膜厚が最も薄い5nm程度がよく、次に厚い次周期の88nm程度がよいことを説明したが、本実施形態6では、DBR膜7Eと下層Ni膜を持つ金属反射膜8Eとの2層反射膜構造および、DBR膜7Eと下層Ni膜を持たない金属反射膜8E’との2層反射膜構造について説明する。
(1)波長600nmでの反射率波形の落ち込みがなくなった。これは下層Ni膜厚が3nmで反射率27パーセントから89パーセントに向上した。
(2)TiO2膜の膜厚が88nmよりも高反射率の帯域幅が広がり、波長415~592nm(下層Ni膜厚が3nmの場合)の帯域で90パーセント以上の反射率を確保することができた。
(1)略測定波長領域全体で反射率が向上し、波長450nmでの反射率は91.9パーセントから95.5パーセントに向上し、反射率は3.6パーセント向上した(DBR6層目のTiO2膜の膜厚が5nmの場合)。
(2)反射率が90パーセント以上の波長帯域幅は、最下層Ni膜の膜厚値が3nmの場合よりも最下層Ni膜の膜厚値が0nmの場合の方が拡張されている。例えばDBR6層目のTiO2膜の膜厚が5nmの場合で、波長帯域415~592nmが波長帯域394~637nmへと拡張されている。
Claims (5)
- 反射膜となるDBR膜構成において、低屈折率膜上に高屈折率膜と該低屈折率膜の対が1対または複数対繰り返し成膜された該低屈折率膜上に最終膜として該高屈折率膜が浸食防止用に連続成膜されている半導体装置。
- 前記低屈折率膜はSiO2膜であり、前記高屈折率膜はTiO2膜であって、前記最終膜のTiO2膜の膜厚を1~13nmとした請求項1に記載の半導体装置。
- 前記DBR膜構成のパターンエッジ部の形状が、角度15~45度の断面テーパ角度を有する先端側ほど膜厚が薄いスロープ形状になっている請求項1に記載の半導体装置。
- 前記DBR膜構成上およびその下地層上に金属膜を備える請求項1から3のいずれかに記載の半導体装置。
- 請求項3に記載の半導体装置を製造する方法であって、レジストパターンを断面庇状に形成した後に、前記DBR膜構成のスロープ形状をDBR蒸着処理により該レジストパターンの庇周囲に形成し、該レジストパターンを除去するリフトオフプロセスを有する半導体装置の製造方法。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014560540A JP5989810B2 (ja) | 2013-02-07 | 2013-12-06 | 半導体装置およびその製造方法 |
CN201380072345.1A CN104969365B (zh) | 2013-02-07 | 2013-12-06 | 半导体发光元件及其制造方法 |
US14/761,713 US9705044B2 (en) | 2013-02-07 | 2013-12-06 | Semiconductor device and method for manufacturing same |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013022736 | 2013-02-07 | ||
JP2013-022736 | 2013-02-07 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2014122709A1 true WO2014122709A1 (ja) | 2014-08-14 |
Family
ID=51299325
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2013/007193 WO2014122709A1 (ja) | 2013-02-07 | 2013-12-06 | 半導体装置およびその製造方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US9705044B2 (ja) |
JP (1) | JP5989810B2 (ja) |
CN (1) | CN104969365B (ja) |
WO (1) | WO2014122709A1 (ja) |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105047768A (zh) * | 2015-06-01 | 2015-11-11 | 合肥彩虹蓝光科技有限公司 | 一种新型高亮pss的制备方法 |
JP2017135348A (ja) * | 2016-01-29 | 2017-08-03 | 日亜化学工業株式会社 | 発光素子及びその製造方法 |
CN107086224A (zh) * | 2016-02-12 | 2017-08-22 | 唯亚威解决方案股份有限公司 | 制造传感器装置 |
JP2018010958A (ja) * | 2016-07-13 | 2018-01-18 | 日亜化学工業株式会社 | 発光装置およびその製造方法、ならびに表示装置 |
JP2021082782A (ja) * | 2019-11-22 | 2021-05-27 | 株式会社リコー | 面発光レーザ素子、面発光レーザ、面発光レーザ装置、光源装置及び検出装置 |
JP2022540011A (ja) * | 2019-06-27 | 2022-09-14 | ルミレッズ リミテッド ライアビリティ カンパニー | 光分解を低減したledのdbr構造 |
CN115064937A (zh) * | 2022-06-08 | 2022-09-16 | 北京大学 | 一种微曲面dbr及其制备方法和应用 |
JP7410261B1 (ja) | 2022-12-08 | 2024-01-09 | 日機装株式会社 | 半導体発光素子および半導体発光素子の製造方法 |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102471102B1 (ko) * | 2015-10-23 | 2022-11-25 | 서울바이오시스 주식회사 | 분포 브래그 반사기를 가지는 발광 다이오드 칩 |
KR102673595B1 (ko) * | 2017-02-14 | 2024-06-12 | 삼성전자주식회사 | Led 장치 및 그 제조 방법 |
CN108172673B (zh) * | 2018-01-31 | 2023-10-13 | 江苏新广联科技股份有限公司 | 用于led倒装芯片的分布式布拉格反射镜图形的制作方法和结构 |
KR102443027B1 (ko) | 2018-03-02 | 2022-09-14 | 삼성전자주식회사 | 반도체 발광소자 |
CN111837300A (zh) * | 2018-03-07 | 2020-10-27 | 索尼半导体解决方案公司 | 表面发射激光器 |
DE102018107667A1 (de) | 2018-03-15 | 2019-09-19 | Osram Opto Semiconductors Gmbh | Optoelektronischer halbleiterchip |
US11799058B2 (en) | 2018-03-15 | 2023-10-24 | Osram Oled Gmbh | Optoelectronic semiconductor chip |
MX2021009299A (es) * | 2019-01-31 | 2022-01-24 | Seoul Viosys Co Ltd | Diodo emisor de luz. |
CN111312874B (zh) * | 2020-03-18 | 2024-06-25 | 佛山市国星半导体技术有限公司 | 一种抗水解led芯片及其制作方法、抗水解led器件 |
CN112787210B (zh) * | 2020-12-31 | 2022-05-27 | 厦门三安光电有限公司 | 一种激光二极管 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5620165A (en) * | 1979-07-25 | 1981-02-25 | Chiyou Lsi Gijutsu Kenkyu Kumiai | Formation of pattern |
JPS6053028A (ja) * | 1983-09-02 | 1985-03-26 | Hitachi Ltd | 微細パタ−ン形成方法 |
JPH09236859A (ja) * | 1996-02-28 | 1997-09-09 | Canon Inc | ファインダー内表示装置 |
JP2009164423A (ja) * | 2008-01-08 | 2009-07-23 | Nichia Corp | 発光素子 |
JP2012511252A (ja) * | 2008-12-08 | 2012-05-17 | クリー インコーポレイテッド | 複合高反射性層 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03239386A (ja) * | 1990-02-16 | 1991-10-24 | Nec Corp | 面発光半導体レーザ |
JP2005166881A (ja) * | 2003-12-02 | 2005-06-23 | Victor Co Of Japan Ltd | 窒化物半導体レーザ素子 |
US8247302B2 (en) | 2008-12-04 | 2012-08-21 | Micron Technology, Inc. | Methods of fabricating substrates |
JP2010171182A (ja) * | 2009-01-22 | 2010-08-05 | Sanyo Electric Co Ltd | 多波長半導体レーザ装置 |
JP5326677B2 (ja) * | 2009-03-09 | 2013-10-30 | ソニー株式会社 | 半導体レーザおよびその製造方法 |
JP5855344B2 (ja) | 2010-02-12 | 2016-02-09 | ソウル バイオシス カンパニー リミテッドSeoul Viosys Co.,Ltd. | 分布ブラッグ反射器を有する発光ダイオードチップ及びその製造方法 |
JP5706962B2 (ja) * | 2010-06-24 | 2015-04-22 | ソウル バイオシス カンパニー リミテッドSeoul Viosys Co.,Ltd. | 発光ダイオード |
WO2013157179A1 (ja) | 2012-04-19 | 2013-10-24 | シャープ株式会社 | 半導体装置の製造方法、耐熱シート、基板裏面膜形成時の基板表面保護方法および半導体基板の保持方法 |
WO2013161146A1 (ja) | 2012-04-26 | 2013-10-31 | シャープ株式会社 | 半導体装置の製造方法 |
-
2013
- 2013-12-06 US US14/761,713 patent/US9705044B2/en active Active
- 2013-12-06 JP JP2014560540A patent/JP5989810B2/ja active Active
- 2013-12-06 WO PCT/JP2013/007193 patent/WO2014122709A1/ja active Application Filing
- 2013-12-06 CN CN201380072345.1A patent/CN104969365B/zh active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5620165A (en) * | 1979-07-25 | 1981-02-25 | Chiyou Lsi Gijutsu Kenkyu Kumiai | Formation of pattern |
JPS6053028A (ja) * | 1983-09-02 | 1985-03-26 | Hitachi Ltd | 微細パタ−ン形成方法 |
JPH09236859A (ja) * | 1996-02-28 | 1997-09-09 | Canon Inc | ファインダー内表示装置 |
JP2009164423A (ja) * | 2008-01-08 | 2009-07-23 | Nichia Corp | 発光素子 |
JP2012511252A (ja) * | 2008-12-08 | 2012-05-17 | クリー インコーポレイテッド | 複合高反射性層 |
Cited By (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105047768A (zh) * | 2015-06-01 | 2015-11-11 | 合肥彩虹蓝光科技有限公司 | 一种新型高亮pss的制备方法 |
JP2017135348A (ja) * | 2016-01-29 | 2017-08-03 | 日亜化学工業株式会社 | 発光素子及びその製造方法 |
CN107086224A (zh) * | 2016-02-12 | 2017-08-22 | 唯亚威解决方案股份有限公司 | 制造传感器装置 |
JP2017168822A (ja) * | 2016-02-12 | 2017-09-21 | ヴァイアヴィ・ソリューションズ・インコーポレイテッドViavi Solutions Inc. | センサデバイスの製造方法 |
JP2018010958A (ja) * | 2016-07-13 | 2018-01-18 | 日亜化学工業株式会社 | 発光装置およびその製造方法、ならびに表示装置 |
JP2022540011A (ja) * | 2019-06-27 | 2022-09-14 | ルミレッズ リミテッド ライアビリティ カンパニー | 光分解を低減したledのdbr構造 |
JP7164737B2 (ja) | 2019-06-27 | 2022-11-01 | ルミレッズ リミテッド ライアビリティ カンパニー | 光分解を低減したledのdbr構造 |
US11901702B2 (en) | 2019-06-27 | 2024-02-13 | Lumileds Llc | LED DBR structure with reduced photodegradation |
JP7507828B2 (ja) | 2019-06-27 | 2024-06-28 | ルミレッズ リミテッド ライアビリティ カンパニー | 光分解を低減したledのdbr構造 |
JP2021082782A (ja) * | 2019-11-22 | 2021-05-27 | 株式会社リコー | 面発光レーザ素子、面発光レーザ、面発光レーザ装置、光源装置及び検出装置 |
JP7367484B2 (ja) | 2019-11-22 | 2023-10-24 | 株式会社リコー | 面発光レーザ素子、面発光レーザ、面発光レーザ装置、光源装置及び検出装置 |
CN115064937A (zh) * | 2022-06-08 | 2022-09-16 | 北京大学 | 一种微曲面dbr及其制备方法和应用 |
CN115064937B (zh) * | 2022-06-08 | 2023-01-24 | 北京大学 | 一种微曲面dbr及其制备方法和应用 |
JP7410261B1 (ja) | 2022-12-08 | 2024-01-09 | 日機装株式会社 | 半導体発光素子および半導体発光素子の製造方法 |
Also Published As
Publication number | Publication date |
---|---|
US9705044B2 (en) | 2017-07-11 |
US20150357525A1 (en) | 2015-12-10 |
CN104969365B (zh) | 2017-12-26 |
CN104969365A (zh) | 2015-10-07 |
JP5989810B2 (ja) | 2016-09-07 |
JPWO2014122709A1 (ja) | 2017-01-26 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5989810B2 (ja) | 半導体装置およびその製造方法 | |
EP2362453B1 (en) | Light emitting diode chip having distributed Bragg reflector and light emitting diode package having distributed Bragg reflector | |
JP5633477B2 (ja) | 発光素子 | |
CN108281523B (zh) | 具有电流阻挡层的发光元件 | |
JP5929714B2 (ja) | 半導体発光素子 | |
JP5541261B2 (ja) | Iii族窒化物半導体発光素子 | |
CN111446336A (zh) | 发光二极管 | |
US20140124821A1 (en) | Semiconductor light-emitting element | |
JP6087096B2 (ja) | 半導体発光素子及びその製造方法 | |
US8772790B2 (en) | Nitride semiconductor light-emitting element, nitride semiconductor light-emitting device, and method of manufacturing nitride semiconductor light-emitting element | |
US20230268466A1 (en) | Light emitting diode device | |
JP5855344B2 (ja) | 分布ブラッグ反射器を有する発光ダイオードチップ及びその製造方法 | |
JP6176025B2 (ja) | 金属膜の形成方法及び発光素子の製造方法 | |
KR102562063B1 (ko) | 발광 다이오드 | |
KR20110117964A (ko) | 반도체 발광 소자 | |
US20220140203A1 (en) | Flip-chip light-emitting diode | |
JP5378131B2 (ja) | 窒化物半導体発光ダイオード素子 | |
JP6252123B2 (ja) | 発光素子の製造方法 | |
KR101604092B1 (ko) | 반도체 발광소자 | |
KR101928309B1 (ko) | 반도체 발광소자의 제조 방법 | |
JP5404808B2 (ja) | 発光素子 | |
KR101205437B1 (ko) | 반도체 발광 소자 | |
JP2011071340A (ja) | 発光素子 | |
JP7453588B2 (ja) | 垂直共振器面発光レーザ素子 | |
CN113903840B (zh) | 发光二极管及发光模块 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 13874446 Country of ref document: EP Kind code of ref document: A1 |
|
WWE | Wipo information: entry into national phase |
Ref document number: 14761713 Country of ref document: US |
|
ENP | Entry into the national phase |
Ref document number: 2014560540 Country of ref document: JP Kind code of ref document: A |
|
NENP | Non-entry into the national phase |
Ref country code: DE |
|
122 | Ep: pct application non-entry in european phase |
Ref document number: 13874446 Country of ref document: EP Kind code of ref document: A1 |