MX2021009299A - Diodo emisor de luz. - Google Patents
Diodo emisor de luz.Info
- Publication number
- MX2021009299A MX2021009299A MX2021009299A MX2021009299A MX2021009299A MX 2021009299 A MX2021009299 A MX 2021009299A MX 2021009299 A MX2021009299 A MX 2021009299A MX 2021009299 A MX2021009299 A MX 2021009299A MX 2021009299 A MX2021009299 A MX 2021009299A
- Authority
- MX
- Mexico
- Prior art keywords
- conductive
- type semiconductor
- semiconductor layer
- wavelength
- reflection
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 abstract 6
- 230000001747 exhibiting effect Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
- H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/10—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
- H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/405—Reflective materials
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Led Devices (AREA)
- Led Device Packages (AREA)
Abstract
Un diodo emisor de luz de acuerdo con una realización ejemplar incluye: una primera capa semiconductora de tipo conductivo; una mesa dispuesta sobre la primera capa semiconductora de tipo conductivo, y que incluye una capa activa y una segunda capa semiconductora de tipo conductivo; y una capa aislante inferior que cubre la mesa y al menos una porción de la primera capa semiconductora de tipo conductivo expuesta alrededor de la mesa, y que tiene una primera abertura para permitir la conexión eléctrica a la primera capa semiconductora de tipo conductivo y una segunda abertura para permitir la conexión eléctrica a la segunda capa semiconductora de tipo conductivo, en la que la capa activa genera luz que tiene una longitud de onda de pico de unos 500 nm o menos, la capa aislante inferior incluye un reflector de Bragg distribuido, la capa aislante inferior tiene una banda de longitud de onda de alta reflexión que exhibe continuamente reflectancias del 90% o más en un rango de longitudes de onda de la región visible, las reflectancias en una primera región de longitud de onda que incluye una longitud de onda de pico de la luz generada en la capa activa dentro de la banda de longitud de onda de alta reflexión son mayores que las de una segunda región de longitud de onda dentro de un rango de 554 nm a 700 nm, y la primera región de longitud de onda está situada en una región de longitudes de onda más cortas que 554 nm.
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020190012988A KR102610626B1 (ko) | 2019-01-31 | 2019-01-31 | 솔더 범프를 갖는 발광 다이오드 |
KR1020190012666A KR102632226B1 (ko) | 2019-01-31 | 2019-01-31 | 분포 브래그 반사기를 갖는 발광 다이오드 |
PCT/KR2019/017219 WO2020159068A1 (ko) | 2019-01-31 | 2019-12-06 | 발광 다이오드 |
Publications (1)
Publication Number | Publication Date |
---|---|
MX2021009299A true MX2021009299A (es) | 2022-01-24 |
Family
ID=71842204
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
MX2021009299A MX2021009299A (es) | 2019-01-31 | 2019-12-06 | Diodo emisor de luz. |
Country Status (8)
Country | Link |
---|---|
US (1) | US12015112B2 (es) |
EP (1) | EP3920245A4 (es) |
CN (3) | CN111509101A (es) |
BR (1) | BR112021015173A2 (es) |
CA (1) | CA3127995A1 (es) |
MX (1) | MX2021009299A (es) |
WO (1) | WO2020159068A1 (es) |
ZA (2) | ZA202106006B (es) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW202143507A (zh) * | 2020-05-04 | 2021-11-16 | 晶元光電股份有限公司 | 發光元件 |
DE112021005773T5 (de) * | 2021-01-19 | 2023-08-31 | Ams-Osram International Gmbh | Strahlungsemittierender halbleiterchip und verfahren zur herstellung eines strahlungsemittierenden halbleiterchips |
CN113644177B (zh) * | 2021-08-10 | 2022-12-09 | 厦门三安光电有限公司 | 发光二极管及发光装置 |
CN113921672B (zh) * | 2021-09-14 | 2023-06-20 | 厦门三安光电有限公司 | 发光二极管及发光模块 |
CN114464710B (zh) * | 2021-12-27 | 2023-08-08 | 厦门士兰明镓化合物半导体有限公司 | 一种led芯片及其制备方法 |
CN115579438A (zh) * | 2022-12-09 | 2023-01-06 | 江西兆驰半导体有限公司 | 一种倒装银镜发光二极管芯片及其制备方法 |
CN116960253B (zh) * | 2023-09-19 | 2023-12-19 | 江西兆驰半导体有限公司 | 一种倒装发光二极管芯片及其制备方法 |
Family Cites Families (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8963178B2 (en) * | 2009-11-13 | 2015-02-24 | Seoul Viosys Co., Ltd. | Light emitting diode chip having distributed bragg reflector and method of fabricating the same |
KR101364720B1 (ko) * | 2010-07-28 | 2014-02-19 | 서울바이오시스 주식회사 | 분포 브래그 반사기를 갖는 발광 다이오드 |
KR101562375B1 (ko) * | 2011-07-08 | 2015-10-23 | 서울바이오시스 주식회사 | 분포 브래그 반사기를 갖는 발광 다이오드 칩 및 발광 다이오드 패키지 |
DE202012013620U1 (de) * | 2011-09-16 | 2018-08-06 | Seoul Viosys Co., Ltd. | Leuchtdiode |
WO2014122709A1 (ja) * | 2013-02-07 | 2014-08-14 | シャープ株式会社 | 半導体装置およびその製造方法 |
EP3014630B1 (en) | 2013-06-24 | 2017-08-09 | ABB Schweiz AG | A material comprising reduced graphene oxide, a device comprising the material and a method of producing the material |
KR20160027875A (ko) * | 2014-08-28 | 2016-03-10 | 서울바이오시스 주식회사 | 발광소자 |
KR102227769B1 (ko) * | 2014-11-06 | 2021-03-16 | 삼성전자주식회사 | 반도체 발광소자 및 이를 이용한 반도체 발광소자 패키지 |
KR102282137B1 (ko) * | 2014-11-25 | 2021-07-28 | 삼성전자주식회사 | 반도체 발광소자 및 이를 구비한 반도체 발광장치 |
US20160329461A1 (en) * | 2015-02-17 | 2016-11-10 | Genesis Photonics Inc. | Light emitting diode |
EP3062392A1 (de) * | 2015-02-24 | 2016-08-31 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Reflektor mit einer elektronischen Schaltung und Antennenvorrichtung mit einem Reflektor |
KR102323250B1 (ko) * | 2015-05-27 | 2021-11-09 | 삼성전자주식회사 | 반도체 발광소자 제조방법 |
US9851056B2 (en) * | 2015-10-16 | 2017-12-26 | Seoul Viosys Co., Ltd. | Compact light emitting diode chip and light emitting device having a slim structure with secured durability |
CN109904293B (zh) * | 2015-10-16 | 2022-01-18 | 首尔伟傲世有限公司 | 发光二极管芯片、发光装置及电子装置 |
KR102471102B1 (ko) * | 2015-10-23 | 2022-11-25 | 서울바이오시스 주식회사 | 분포 브래그 반사기를 가지는 발광 다이오드 칩 |
KR102672611B1 (ko) * | 2016-11-07 | 2024-06-07 | 서울바이오시스 주식회사 | 칩 스케일 패키지 발광 다이오드 |
KR102610627B1 (ko) * | 2016-11-25 | 2023-12-07 | 서울바이오시스 주식회사 | 복수의 파장변환기를 가지는 발광 다이오드 |
KR102550007B1 (ko) * | 2016-11-30 | 2023-07-03 | 서울바이오시스 주식회사 | 복수의 발광셀들을 가지는 발광 다이오드 |
KR102601419B1 (ko) * | 2016-12-28 | 2023-11-14 | 서울바이오시스 주식회사 | 고 신뢰성 발광 다이오드 |
CN106684219A (zh) * | 2017-01-22 | 2017-05-17 | 厦门乾照光电股份有限公司 | 一种led芯片结构及其加工方法 |
KR102382037B1 (ko) * | 2017-05-04 | 2022-04-04 | 서울바이오시스 주식회사 | 고 신뢰성의 발광 다이오드 |
CN107799638A (zh) * | 2017-10-24 | 2018-03-13 | 厦门乾照光电股份有限公司 | 一种倒装led及其制作方法 |
-
2019
- 2019-12-06 CA CA3127995A patent/CA3127995A1/en active Pending
- 2019-12-06 MX MX2021009299A patent/MX2021009299A/es unknown
- 2019-12-06 BR BR112021015173-7A patent/BR112021015173A2/pt unknown
- 2019-12-06 EP EP19913227.5A patent/EP3920245A4/en active Pending
- 2019-12-06 WO PCT/KR2019/017219 patent/WO2020159068A1/ko unknown
- 2019-12-26 CN CN201911399673.8A patent/CN111509101A/zh active Pending
- 2019-12-26 CN CN201911369944.5A patent/CN111509100A/zh active Pending
- 2019-12-26 CN CN201911399687.XA patent/CN111509115A/zh active Pending
-
2021
- 2021-07-29 US US17/389,025 patent/US12015112B2/en active Active
- 2021-08-20 ZA ZA2021/06006A patent/ZA202106006B/en unknown
-
2022
- 2022-10-17 ZA ZA2022/11367A patent/ZA202211367B/en unknown
Also Published As
Publication number | Publication date |
---|---|
US20210359188A1 (en) | 2021-11-18 |
CA3127995A1 (en) | 2020-08-06 |
CN111509115A (zh) | 2020-08-07 |
US12015112B2 (en) | 2024-06-18 |
CN111509101A (zh) | 2020-08-07 |
ZA202106006B (en) | 2023-01-25 |
EP3920245A4 (en) | 2022-11-02 |
WO2020159068A1 (ko) | 2020-08-06 |
CN111509100A (zh) | 2020-08-07 |
ZA202211367B (en) | 2023-02-22 |
BR112021015173A2 (pt) | 2021-09-28 |
EP3920245A1 (en) | 2021-12-08 |
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