KR102438948B1 - 발광소자의 제조 방법 - Google Patents

발광소자의 제조 방법 Download PDF

Info

Publication number
KR102438948B1
KR102438948B1 KR1020170173095A KR20170173095A KR102438948B1 KR 102438948 B1 KR102438948 B1 KR 102438948B1 KR 1020170173095 A KR1020170173095 A KR 1020170173095A KR 20170173095 A KR20170173095 A KR 20170173095A KR 102438948 B1 KR102438948 B1 KR 102438948B1
Authority
KR
South Korea
Prior art keywords
nitride semiconductor
semiconductor layer
light emitting
substrate
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020170173095A
Other languages
English (en)
Korean (ko)
Other versions
KR20180070489A (ko
Inventor
슌 기타하마
šœ 기타하마
요시키 이노우에
가즈히로 나가미네
준야 나리타
Original Assignee
니치아 카가쿠 고교 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 니치아 카가쿠 고교 가부시키가이샤 filed Critical 니치아 카가쿠 고교 가부시키가이샤
Publication of KR20180070489A publication Critical patent/KR20180070489A/ko
Priority to KR1020220106758A priority Critical patent/KR102549581B1/ko
Application granted granted Critical
Publication of KR102438948B1 publication Critical patent/KR102438948B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0137—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials the light-emitting regions comprising nitride materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/813—Bodies having a plurality of light-emitting regions, e.g. multi-junction LEDs or light-emitting devices having photoluminescent regions within the bodies
    • H01L33/005—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L33/0008—
    • H01L33/14—
    • H01L33/62—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
    • H10H20/01335—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials the light-emitting regions comprising nitride materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/021—Singulating, e.g. dicing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/032—Manufacture or treatment of electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/034—Manufacture or treatment of coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/816—Bodies having carrier transport control structures, e.g. highly-doped semiconductor layers or current-blocking structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/816—Bodies having carrier transport control structures, e.g. highly-doped semiconductor layers or current-blocking structures
    • H10H20/8162—Current-blocking structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H10H20/8312—Electrodes characterised by their shape extending at least partially through the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/82—Roughened surfaces, e.g. at the interface between epitaxial layers

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)
  • Dicing (AREA)
  • Laser Beam Processing (AREA)
KR1020170173095A 2016-12-16 2017-12-15 발광소자의 제조 방법 Active KR102438948B1 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020220106758A KR102549581B1 (ko) 2016-12-16 2022-08-25 발광소자의 제조 방법

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2016243899 2016-12-16
JPJP-P-2016-243899 2016-12-16
JPJP-P-2017-171833 2017-09-07
JP2017171833A JP6669144B2 (ja) 2016-12-16 2017-09-07 発光素子の製造方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020220106758A Division KR102549581B1 (ko) 2016-12-16 2022-08-25 발광소자의 제조 방법

Publications (2)

Publication Number Publication Date
KR20180070489A KR20180070489A (ko) 2018-06-26
KR102438948B1 true KR102438948B1 (ko) 2022-08-31

Family

ID=62715668

Family Applications (2)

Application Number Title Priority Date Filing Date
KR1020170173095A Active KR102438948B1 (ko) 2016-12-16 2017-12-15 발광소자의 제조 방법
KR1020220106758A Active KR102549581B1 (ko) 2016-12-16 2022-08-25 발광소자의 제조 방법

Family Applications After (1)

Application Number Title Priority Date Filing Date
KR1020220106758A Active KR102549581B1 (ko) 2016-12-16 2022-08-25 발광소자의 제조 방법

Country Status (9)

Country Link
US (2) US12218271B2 (cg-RX-API-DMAC7.html)
EP (1) EP4086976B1 (cg-RX-API-DMAC7.html)
JP (4) JP6669144B2 (cg-RX-API-DMAC7.html)
KR (2) KR102438948B1 (cg-RX-API-DMAC7.html)
CN (1) CN115863494A (cg-RX-API-DMAC7.html)
AU (1) AU2017276283B2 (cg-RX-API-DMAC7.html)
BR (1) BR102017027106B1 (cg-RX-API-DMAC7.html)
MY (1) MY198985A (cg-RX-API-DMAC7.html)
TW (2) TWI759384B (cg-RX-API-DMAC7.html)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6669144B2 (ja) * 2016-12-16 2020-03-18 日亜化学工業株式会社 発光素子の製造方法
JP7339509B2 (ja) 2019-08-02 2023-09-06 日亜化学工業株式会社 発光素子の製造方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5625522B2 (ja) * 2010-06-16 2014-11-19 豊田合成株式会社 レーザ加工方法
JP5920186B2 (ja) * 2012-11-20 2016-05-18 豊田合成株式会社 半導体発光素子の製造方法および半導体発光素子

Family Cites Families (65)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4084116A (en) * 1976-09-20 1978-04-11 International Business Machines Corporation Procedure for tightening tape wraps on a spindle
JPS5342956A (en) * 1976-09-25 1978-04-18 Toshio Uenishi Method of stitching visor of cap
JPH04103666U (ja) * 1991-02-18 1992-09-07 日亜化学工業株式会社 青色発光デバイスの電極
JP2836685B2 (ja) * 1993-02-02 1998-12-14 日亜化学工業株式会社 ｐ型窒化ガリウム系化合物半導体の製造方法
JPH07235731A (ja) * 1994-02-24 1995-09-05 Fujitsu Ltd 化合物半導体装置の製造方法
JPH08306643A (ja) * 1995-04-28 1996-11-22 Sumitomo Chem Co Ltd ３−５族化合物半導体用電極および発光素子
JPH09162441A (ja) * 1995-12-05 1997-06-20 Toshiba Corp 半導体装置及びその製造方法
JPH10294531A (ja) * 1997-02-21 1998-11-04 Toshiba Corp 窒化物化合物半導体発光素子
WO1998039827A1 (en) 1997-03-07 1998-09-11 Sharp Kabushiki Kaisha Gallium nitride semiconductor light emitting element with active layer having multiplex quantum well structure and semiconductor laser light source device
JP3741528B2 (ja) * 1997-12-15 2006-02-01 シャープ株式会社 窒化ガリウム系半導体素子の製造方法
JP2000294828A (ja) * 1999-04-07 2000-10-20 Mitsubishi Cable Ind Ltd ＧａＮ系半導体素子の製造方法
JP2000353822A (ja) 1999-06-11 2000-12-19 Hitachi Ltd 窒化ガリウム系化合物半導体発光素子およびその製造方法
JP3723434B2 (ja) 1999-09-24 2005-12-07 三洋電機株式会社 半導体発光素子
JP3626442B2 (ja) 2000-09-13 2005-03-09 浜松ホトニクス株式会社 レーザ加工方法
JP4659300B2 (ja) 2000-09-13 2011-03-30 浜松ホトニクス株式会社 レーザ加工方法及び半導体チップの製造方法
EP1387453B1 (en) * 2001-04-12 2009-11-11 Nichia Corporation Gallium nitride compound semiconductor element
JP2002009392A (ja) 2001-06-22 2002-01-11 Matsushita Electric Ind Co Ltd 半導体発光素子およびその製造方法
JP2004088086A (ja) * 2002-06-25 2004-03-18 Toyota Central Res & Dev Lab Inc 半導体レーザ素子とその製造方法
JP4056481B2 (ja) * 2003-02-07 2008-03-05 三洋電機株式会社 半導体素子およびその製造方法
JP4385746B2 (ja) 2003-11-28 2009-12-16 三菱化学株式会社 窒化物系半導体素子の製造方法
JP3910603B2 (ja) 2004-06-07 2007-04-25 株式会社東芝 熱処理装置、熱処理方法及び半導体装置の製造方法
GB2432455A (en) * 2005-11-17 2007-05-23 Sharp Kk Growth of a semiconductor layer structure
JP5522490B2 (ja) 2005-11-30 2014-06-18 株式会社リコー 面発光レーザ素子、それを備えた面発光レーザアレイ、面発光レーザ素子または面発光レーザアレイを備えた電子写真システムおよび面発光レーザ素子または面発光レーザアレイを備えた光通信システム
JP5194432B2 (ja) 2005-11-30 2013-05-08 株式会社リコー 面発光レーザ素子
JP4535997B2 (ja) 2005-12-09 2010-09-01 シャープ株式会社 窒化物半導体レーザ素子およびその製造方法
JP4940987B2 (ja) 2006-03-20 2012-05-30 日亜化学工業株式会社 窒化物半導体レーザ素子及びその製造方法
US20070298529A1 (en) 2006-05-31 2007-12-27 Toyoda Gosei, Co., Ltd. Semiconductor light-emitting device and method for separating semiconductor light-emitting devices
JP5232375B2 (ja) 2006-10-13 2013-07-10 アイシン精機株式会社 半導体発光素子の分離方法
JP2009176781A (ja) * 2008-01-21 2009-08-06 Mitsubishi Chemicals Corp ＧａＮ系ＬＥＤチップおよびＧａＮ系ＬＥＤチップの製造方法
KR101205527B1 (ko) * 2009-01-15 2012-11-27 서울옵토디바이스주식회사 발광 다이오드 및 그 제조 방법
US20100291772A1 (en) * 2009-05-15 2010-11-18 Yang Cheng-Chung Semiconductor Manufacturing Method
JP2011129765A (ja) * 2009-12-18 2011-06-30 Showa Denko Kk 半導体発光素子の製造方法
JP2011233783A (ja) 2010-04-28 2011-11-17 Mitsubishi Heavy Ind Ltd 半導体発光素子、半導体発光素子の保護膜及びその作製方法
JP2011243875A (ja) * 2010-05-20 2011-12-01 Disco Abrasive Syst Ltd サファイアウェーハの分割方法
JP2012000636A (ja) * 2010-06-16 2012-01-05 Showa Denko Kk レーザ加工方法
US8877612B2 (en) 2010-06-16 2014-11-04 Toyoda Gosei Co., Ltd. Laser processing method
JP2012004313A (ja) * 2010-06-16 2012-01-05 Showa Denko Kk レーザ加工方法
JP2012028381A (ja) 2010-07-20 2012-02-09 Sharp Corp 半導体発光素子およびその製造方法
KR100988194B1 (ko) * 2010-07-26 2010-10-18 (주)더리즈 반도체 발광 소자 및 그 제조 방법
TWI462338B (zh) * 2010-08-16 2014-11-21 Lextar Electronics Corp A light-emitting diode with a protective layer of the region
JP5589942B2 (ja) 2011-04-15 2014-09-17 豊田合成株式会社 半導体発光チップの製造方法
KR101259483B1 (ko) 2011-06-01 2013-05-06 서울옵토디바이스주식회사 반도체 발광 소자 및 그 제조 방법
KR20130007030A (ko) * 2011-06-28 2013-01-18 (주)세미머티리얼즈 무반사막을 갖는 발광소자 및 그 제조 방법
GB2494008A (en) * 2011-08-23 2013-02-27 Oclaro Technology Ltd semiconductor laser device and a method for manufacturing a semiconductor laser device
US20140225062A1 (en) 2011-10-05 2014-08-14 Sharp Kabushiki Kaisha Nitride semiconductor light emitting element and method for manufacturing nitride semiconductor light emitting element
JP6125176B2 (ja) * 2012-08-27 2017-05-10 シャープ株式会社 高透過率保護膜作製方法および半導体発光素子の製造方法
US9276170B2 (en) * 2012-10-23 2016-03-01 Toyoda Gosei Co., Ltd. Semiconductor light emitting element and method of manufacturing semiconductor light emitting element
JP5929705B2 (ja) 2012-10-23 2016-06-08 豊田合成株式会社 半導体発光素子および半導体発光素子の製造方法
JP6068091B2 (ja) 2012-10-24 2017-01-25 スタンレー電気株式会社 発光素子
JP2014216470A (ja) 2013-04-25 2014-11-17 スタンレー電気株式会社 半導体発光素子
DE102013104270A1 (de) * 2013-04-26 2014-10-30 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines optoelektronischen Halbleiterchips und optoelektronischer Halbleiterchip
JP2015082612A (ja) 2013-10-23 2015-04-27 旭化成株式会社 窒化物発光素子および窒化物発光素子の製造方法
JP6187156B2 (ja) * 2013-10-29 2017-08-30 日亜化学工業株式会社 窒化物半導体素子の製造方法
JP2015130470A (ja) * 2013-12-05 2015-07-16 豊田合成株式会社 Ｉｉｉ族窒化物半導体発光素子およびその製造方法
JP6136908B2 (ja) * 2013-12-12 2017-05-31 豊田合成株式会社 発光素子の製造方法
JP6561367B2 (ja) 2014-02-26 2019-08-21 学校法人 名城大学 ｎｐｎ型窒化物半導体発光素子の製造方法
JP5907210B2 (ja) 2014-05-26 2016-04-26 株式会社リコー 半導体装置の製造方法
CN104409585B (zh) * 2014-11-28 2017-11-24 杭州士兰明芯科技有限公司 一种垂直led结构及其制作方法
JP6476854B2 (ja) 2014-12-26 2019-03-06 日亜化学工業株式会社 発光素子の製造方法
JP6146455B2 (ja) * 2015-03-24 2017-06-14 日亜化学工業株式会社 発光素子の製造方法
US9873170B2 (en) * 2015-03-24 2018-01-23 Nichia Corporation Method of manufacturing light emitting element
JP2017107921A (ja) * 2015-12-07 2017-06-15 株式会社ディスコ ウエーハの加工方法
US10505072B2 (en) 2016-12-16 2019-12-10 Nichia Corporation Method for manufacturing light emitting element
JP6669144B2 (ja) * 2016-12-16 2020-03-18 日亜化学工業株式会社 発光素子の製造方法
JP6504194B2 (ja) * 2017-03-31 2019-04-24 日亜化学工業株式会社 発光素子の製造方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5625522B2 (ja) * 2010-06-16 2014-11-19 豊田合成株式会社 レーザ加工方法
JP5920186B2 (ja) * 2012-11-20 2016-05-18 豊田合成株式会社 半導体発光素子の製造方法および半導体発光素子

Also Published As

Publication number Publication date
KR20220123614A (ko) 2022-09-08
JP7144684B2 (ja) 2022-09-30
AU2017276283A1 (en) 2018-07-05
TWI816308B (zh) 2023-09-21
US12218271B2 (en) 2025-02-04
TW202404123A (zh) 2024-01-16
US20250324819A1 (en) 2025-10-16
CN115863494A (zh) 2023-03-28
TW202224210A (zh) 2022-06-16
BR102017027106B1 (pt) 2023-12-12
JP2019220723A (ja) 2019-12-26
US20240079517A1 (en) 2024-03-07
KR102549581B1 (ko) 2023-06-28
JP2018101771A (ja) 2018-06-28
JP7445160B2 (ja) 2024-03-07
KR20180070489A (ko) 2018-06-26
TWI759384B (zh) 2022-04-01
JP6669144B2 (ja) 2020-03-18
AU2017276283B2 (en) 2022-05-12
BR102017027106A2 (pt) 2018-07-17
JP7590680B2 (ja) 2024-11-27
EP4086976A1 (en) 2022-11-09
JP2024056981A (ja) 2024-04-23
JP2022164879A (ja) 2022-10-27
MY198985A (en) 2023-10-06
TW201830730A (zh) 2018-08-16
EP4086976B1 (en) 2025-11-12

Similar Documents

Publication Publication Date Title
US9559253B2 (en) Method of manufacturing nitride semiconductor element
JP7590680B2 (ja) 発光素子の製造方法
US11855238B2 (en) Light emitting element
JP6504194B2 (ja) 発光素子の製造方法
JP2016171141A (ja) 窒化物発光素子および窒化物発光素子の製造方法
JP5025199B2 (ja) Ｉｉｉ族窒化物半導体発光素子
TWI900899B (zh) 發光元件之製造方法、及發光元件
KR20140135557A (ko) 발광 소자 및 그 제조 방법
JP2008053385A (ja) 窒化物半導体発光ダイオード素子

Legal Events

Date Code Title Description
PA0109 Patent application

Patent event code: PA01091R01D

Comment text: Patent Application

Patent event date: 20171215

PG1501 Laying open of application
A201 Request for examination
PA0201 Request for examination

Patent event code: PA02012R01D

Patent event date: 20201026

Comment text: Request for Examination of Application

Patent event code: PA02011R01I

Patent event date: 20171215

Comment text: Patent Application

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

Comment text: Notification of reason for refusal

Patent event date: 20211217

Patent event code: PE09021S01D

E90F Notification of reason for final refusal
PE0902 Notice of grounds for rejection

Comment text: Final Notice of Reason for Refusal

Patent event date: 20220411

Patent event code: PE09021S02D

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

Patent event code: PE07011S01D

Comment text: Decision to Grant Registration

Patent event date: 20220623

PA0107 Divisional application

Comment text: Divisional Application of Patent

Patent event date: 20220825

Patent event code: PA01071R01D

GRNT Written decision to grant
PR0701 Registration of establishment

Comment text: Registration of Establishment

Patent event date: 20220829

Patent event code: PR07011E01D

PR1002 Payment of registration fee

Payment date: 20220829

End annual number: 3

Start annual number: 1

PG1601 Publication of registration