JP6669144B2 - 発光素子の製造方法 - Google Patents

発光素子の製造方法 Download PDF

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Publication number
JP6669144B2
JP6669144B2 JP2017171833A JP2017171833A JP6669144B2 JP 6669144 B2 JP6669144 B2 JP 6669144B2 JP 2017171833 A JP2017171833 A JP 2017171833A JP 2017171833 A JP2017171833 A JP 2017171833A JP 6669144 B2 JP6669144 B2 JP 6669144B2
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Japan
Prior art keywords
substrate
light emitting
nitride semiconductor
layer
region
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JP2017171833A
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English (en)
Japanese (ja)
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JP2018101771A (ja
Inventor
俊 北濱
俊 北濱
芳樹 井上
芳樹 井上
永峰　和浩
和浩 永峰
成田　准也
准也 成田
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Nichia Corp
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Nichia Corp
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Application filed by Nichia Corp filed Critical Nichia Corp
Priority to AU2017276283A priority Critical patent/AU2017276283B2/en
Priority to US15/842,655 priority patent/US10505072B2/en
Priority to BR102017027106-4A priority patent/BR102017027106B1/pt
Priority to CN202211539888.7A priority patent/CN115863494A/zh
Priority to EP17207634.1A priority patent/EP3336907B1/en
Priority to EP21160607.4A priority patent/EP3848982B1/en
Priority to TW112137806A priority patent/TWI900899B/zh
Priority to MYPI2017704845A priority patent/MY198985A/en
Priority to CN201711347059.8A priority patent/CN108206226B/zh
Priority to TW111106289A priority patent/TWI816308B/zh
Priority to KR1020170173095A priority patent/KR102438948B1/ko
Priority to EP22181047.6A priority patent/EP4086976B1/en
Priority to TW106144121A priority patent/TWI759384B/zh
Publication of JP2018101771A publication Critical patent/JP2018101771A/ja
Priority to US16/677,287 priority patent/US11056612B2/en
Application granted granted Critical
Publication of JP6669144B2 publication Critical patent/JP6669144B2/ja
Priority to US17/338,446 priority patent/US11855238B2/en
Priority to KR1020220106758A priority patent/KR102549581B1/ko
Priority to US18/507,177 priority patent/US12218271B2/en
Priority to US19/003,702 priority patent/US20250324819A1/en
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0137—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials the light-emitting regions comprising nitride materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/813—Bodies having a plurality of light-emitting regions, e.g. multi-junction LEDs or light-emitting devices having photoluminescent regions within the bodies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
    • H10H20/01335—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials the light-emitting regions comprising nitride materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/021—Singulating, e.g. dicing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/032—Manufacture or treatment of electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/034—Manufacture or treatment of coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/816—Bodies having carrier transport control structures, e.g. highly-doped semiconductor layers or current-blocking structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/816—Bodies having carrier transport control structures, e.g. highly-doped semiconductor layers or current-blocking structures
    • H10H20/8162—Current-blocking structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H10H20/8312—Electrodes characterised by their shape extending at least partially through the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/82—Roughened surfaces, e.g. at the interface between epitaxial layers

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)
  • Dicing (AREA)
  • Laser Beam Processing (AREA)
JP2017171833A 2016-12-16 2017-09-07 発光素子の製造方法 Active JP6669144B2 (ja)

Priority Applications (18)

Application Number Priority Date Filing Date Title
US15/842,655 US10505072B2 (en) 2016-12-16 2017-12-14 Method for manufacturing light emitting element
AU2017276283A AU2017276283B2 (en) 2016-12-16 2017-12-14 Method for manufacturing light emitting element
EP22181047.6A EP4086976B1 (en) 2016-12-16 2017-12-15 Light emitting element
EP17207634.1A EP3336907B1 (en) 2016-12-16 2017-12-15 Method for manufacturing light emitting element and light emitting element
EP21160607.4A EP3848982B1 (en) 2016-12-16 2017-12-15 Method for manufacturing light emitting element
TW112137806A TWI900899B (zh) 2016-12-16 2017-12-15 發光元件之製造方法、及發光元件
MYPI2017704845A MY198985A (en) 2016-12-16 2017-12-15 Method for manufacturing light emitting element
CN201711347059.8A CN108206226B (zh) 2016-12-16 2017-12-15 发光元件的制造方法及发光元件
TW111106289A TWI816308B (zh) 2016-12-16 2017-12-15 發光元件之製造方法、及發光元件
KR1020170173095A KR102438948B1 (ko) 2016-12-16 2017-12-15 발광소자의 제조 방법
BR102017027106-4A BR102017027106B1 (pt) 2016-12-16 2017-12-15 Método para fabricar uma pluralidade de elementos emissores de luz, e, elemento emissor de luz
TW106144121A TWI759384B (zh) 2016-12-16 2017-12-15 發光元件之製造方法、及發光元件
CN202211539888.7A CN115863494A (zh) 2016-12-16 2017-12-15 发光元件的制造方法及发光元件
US16/677,287 US11056612B2 (en) 2016-12-16 2019-11-07 Light emitting element
US17/338,446 US11855238B2 (en) 2016-12-16 2021-06-03 Light emitting element
KR1020220106758A KR102549581B1 (ko) 2016-12-16 2022-08-25 발광소자의 제조 방법
US18/507,177 US12218271B2 (en) 2016-12-16 2023-11-13 Light emitting element
US19/003,702 US20250324819A1 (en) 2016-12-16 2024-12-27 Light emitting element

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2016243899 2016-12-16
JP2016243899 2016-12-16

Related Child Applications (1)

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JP2019181932A Division JP7144684B2 (ja) 2016-12-16 2019-10-02 発光素子

Publications (2)

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JP2018101771A JP2018101771A (ja) 2018-06-28
JP6669144B2 true JP6669144B2 (ja) 2020-03-18

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JP2017171833A Active JP6669144B2 (ja) 2016-12-16 2017-09-07 発光素子の製造方法
JP2019181932A Active JP7144684B2 (ja) 2016-12-16 2019-10-02 発光素子
JP2022139459A Active JP7445160B2 (ja) 2016-12-16 2022-09-01 発光素子
JP2024024363A Active JP7590680B2 (ja) 2016-12-16 2024-02-21 発光素子の製造方法

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JP2019181932A Active JP7144684B2 (ja) 2016-12-16 2019-10-02 発光素子
JP2022139459A Active JP7445160B2 (ja) 2016-12-16 2022-09-01 発光素子
JP2024024363A Active JP7590680B2 (ja) 2016-12-16 2024-02-21 発光素子の製造方法

Country Status (9)

Country Link
US (2) US12218271B2 (cg-RX-API-DMAC7.html)
EP (1) EP4086976B1 (cg-RX-API-DMAC7.html)
JP (4) JP6669144B2 (cg-RX-API-DMAC7.html)
KR (2) KR102438948B1 (cg-RX-API-DMAC7.html)
CN (1) CN115863494A (cg-RX-API-DMAC7.html)
AU (1) AU2017276283B2 (cg-RX-API-DMAC7.html)
BR (1) BR102017027106B1 (cg-RX-API-DMAC7.html)
MY (1) MY198985A (cg-RX-API-DMAC7.html)
TW (2) TWI759384B (cg-RX-API-DMAC7.html)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2019220723A (ja) * 2016-12-16 2019-12-26 日亜化学工業株式会社 発光素子の製造方法

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7339509B2 (ja) 2019-08-02 2023-09-06 日亜化学工業株式会社 発光素子の製造方法

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