JP6068091B2 - 発光素子 - Google Patents
発光素子 Download PDFInfo
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- JP6068091B2 JP6068091B2 JP2012234555A JP2012234555A JP6068091B2 JP 6068091 B2 JP6068091 B2 JP 6068091B2 JP 2012234555 A JP2012234555 A JP 2012234555A JP 2012234555 A JP2012234555 A JP 2012234555A JP 6068091 B2 JP6068091 B2 JP 6068091B2
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- emitting element
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- 239000004065 semiconductor Substances 0.000 claims description 101
- 239000000758 substrate Substances 0.000 claims description 29
- 230000000903 blocking effect Effects 0.000 claims description 22
- 230000002093 peripheral effect Effects 0.000 claims description 20
- 239000004020 conductor Substances 0.000 claims description 19
- 238000000034 method Methods 0.000 claims description 14
- 239000012212 insulator Substances 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 260
- 239000011241 protective layer Substances 0.000 description 41
- 239000010408 film Substances 0.000 description 20
- 239000002184 metal Substances 0.000 description 16
- 229910052751 metal Inorganic materials 0.000 description 16
- 239000000463 material Substances 0.000 description 15
- 230000001681 protective effect Effects 0.000 description 9
- 238000004544 sputter deposition Methods 0.000 description 8
- 229920002120 photoresistant polymer Polymers 0.000 description 7
- 229910052719 titanium Inorganic materials 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 6
- 229910052737 gold Inorganic materials 0.000 description 5
- 229910052697 platinum Inorganic materials 0.000 description 5
- 229910004298 SiO 2 Inorganic materials 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- 238000001312 dry etching Methods 0.000 description 4
- 238000001020 plasma etching Methods 0.000 description 4
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 238000010894 electron beam technology Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 238000005498 polishing Methods 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 229910001316 Ag alloy Inorganic materials 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 2
- 229910002704 AlGaN Inorganic materials 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 229910008599 TiW Inorganic materials 0.000 description 2
- 239000012670 alkaline solution Substances 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 238000005566 electron beam evaporation Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 229910002711 AuNi Inorganic materials 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- -1 for example Substances 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000001552 radio frequency sputter deposition Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/405—Reflective materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
- H01L33/145—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure with a current-blocking structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Description
以下に、LED素子を例にして、本発明の実施例1に係る発光素子10について、図1及び図2を参照しつつ説明する。図1は、本発明の実施例1に係る発光素子10断面図であり、図2は、図1の断面図の右端部を拡大した一部拡大図である。
以下に、本発明の実施例2に係る発光素子40について説明する。図4に示すように、発光素子40は、素子側面を覆う絶縁体からなる絶縁性保護膜を有する以外は、発光素子10とほぼ同一の構成を有している。絶縁性保護膜41は、半導体構造層23の側面全体から下面の端部を覆っている。絶縁性保護膜41は、SiO2等の絶縁体で形成されており、例えば、150nmの厚さを有している。
以下に、本発明の実施例3に係る発光素子50について説明する。図6に示すように、発光素子50は、支持基板11上に接合層13が存在しない領域がある以外は、発光素子10とほぼ同一の構成を有している。発光素子50においては、支持基板11上の周縁部領域に接合層13を一部形成しない領域を設けることで高抵抗部17を形成している。
11 支持基板
13 接合層
15 導電性保護層
17 高抵抗部
19 周縁接触面
21 反射電極層
23 半導体構造層
25 p型半導体層
27 活性層
29 n型半導体層
31 電流阻止部
32 高抵抗接触面
33、43 n電極
35 成長基板
41 絶縁性保護膜
45A、45B 配線パターン
47 サブマウント
49 オーミック電極層
Claims (11)
- 半導体構造層と、
前記半導体構造層上に形成され、前記半導体構造層と対向する面に、前記半導体構造層の上面中央から端部方向に延在する凹部を有し、前記半導体構造層と対向する面の周縁部において前記半導体構造層と接している導電体層と、
前記凹部及び前記半導体構造層の上面によって画定される領域を埋めるように形成された反射電極層と、
前記導電体層上に設けられ前記導電体層に接合層を介して接合されている支持基板と、を有する発光素子であって、
前記半導体構造層と前記導電体層との前記周縁部における界面は高抵抗接触面となっており、前記導電体層を挟んで前記高抵抗接触面となっている領域と対向している領域に高抵抗部が配されており、前記導電体層は、前記高抵抗部よりも外側の前記導電体層の周縁領域において前記接合層に電気的に接続されていることを特徴とする発光素子。 - 前記半導体構造層は、前記高抵抗接触面から前記半導体構造層の内部に至る電流阻止部を有することを特徴とする請求項1に記載の発光素子。
- 前記高抵抗部は、空隙であることを特徴とする請求項1または2に記載の発光素子。
- 前記反射電極層と前記半導体構造層との間にオーミック電極層が形成されていることを特徴とする請求項1乃至3のいずれか1に記載の発光素子。
- 前記反射電極層は、前記高抵抗接触面上まで延在していることを特徴とする請求項4に記載の発光素子。
- 前記反射電極層は、前記高抵抗接触面と前記高抵抗部との間の領域に至る位置まで前記高抵抗接触面上に延在していることを特徴とする請求項5に記載の発光素子。
- 前記高抵抗部よりも外側の前記導電体層の周縁領域における前記導電体層と前記高抵抗部との接続面の内縁と外縁との間の距離が、前記高抵抗部の上面と前記高抵抗接触面との間の距離よりも大きいことを特徴とする請求項1乃至6のいずれか1に記載の方法。
- 前記発光素子は、前記半導体構造層の側面から前記半導体層の前記導電体層に接した面の端部領域を覆う絶縁体をさらに有することを特徴とする請求項1乃至7のいずれか1に記載の発光素子。
- 前記接合層は、前記導電体層を挟んで前記高抵抗接触面が形成されている領域と対向する領域に空隙を有することを特徴とする請求項1乃至8のいずれか1に記載の発光素子。
- 前記電流阻止部は、前記半導体構造層をプラズマ処理することによって形成されていることを特徴とする請求項2に記載の発光素子。
- 前記導電体層と前記半導体構造層とがショットキー接合を形成していることを特徴とする請求項1に記載の発光素子。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012234555A JP6068091B2 (ja) | 2012-10-24 | 2012-10-24 | 発光素子 |
US14/062,795 US9368689B2 (en) | 2012-10-24 | 2013-10-24 | Light emitting element |
Applications Claiming Priority (1)
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JP2012234555A JP6068091B2 (ja) | 2012-10-24 | 2012-10-24 | 発光素子 |
Publications (2)
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JP2014086574A JP2014086574A (ja) | 2014-05-12 |
JP6068091B2 true JP6068091B2 (ja) | 2017-01-25 |
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JP2012234555A Active JP6068091B2 (ja) | 2012-10-24 | 2012-10-24 | 発光素子 |
Country Status (2)
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US (1) | US9368689B2 (ja) |
JP (1) | JP6068091B2 (ja) |
Cited By (1)
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KR101748888B1 (ko) * | 2010-11-10 | 2017-06-19 | 닛토덴코 가부시키가이샤 | 반도체 장치의 제법 |
Families Citing this family (14)
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JP6282493B2 (ja) * | 2014-03-12 | 2018-02-21 | スタンレー電気株式会社 | 半導体発光装置 |
US20160064603A1 (en) * | 2014-08-26 | 2016-03-03 | Toshiba Corporation | Light Emitting Diodes With Current Confinement |
CN105552190B (zh) * | 2015-04-30 | 2018-10-09 | 美科米尚技术有限公司 | 微型发光二极管 |
CN105405943A (zh) * | 2015-05-21 | 2016-03-16 | 美科米尚技术有限公司 | 微型发光二极管 |
US10468361B2 (en) * | 2015-08-27 | 2019-11-05 | Mikro Mesa Technology Co., Ltd. | Method of manufacturing light emitting diodes having a supporting layer attached to temporary adhesive |
US10297719B2 (en) * | 2015-08-27 | 2019-05-21 | Mikro Mesa Technology Co., Ltd. | Micro-light emitting diode (micro-LED) device |
CN106711301B (zh) * | 2015-11-12 | 2020-10-27 | 美科米尚技术有限公司 | 发光二极管与其制作方法 |
US10838126B2 (en) * | 2016-09-19 | 2020-11-17 | Apple Inc. | Electronic devices with infrared blocking filters |
US10505072B2 (en) * | 2016-12-16 | 2019-12-10 | Nichia Corporation | Method for manufacturing light emitting element |
JP7096485B2 (ja) | 2018-03-26 | 2022-07-06 | 日亜化学工業株式会社 | 発光素子の製造方法 |
JP7161096B2 (ja) | 2018-06-29 | 2022-10-26 | 日亜化学工業株式会社 | 半導体素子の製造方法 |
JP7324395B2 (ja) | 2018-09-27 | 2023-08-10 | 日亜化学工業株式会社 | 発光素子及びその製造方法 |
EP3891816A4 (en) | 2018-12-03 | 2022-08-31 | Nanosys, Inc. | LIGHT EMITTING DIODES WITH DEACTIVATED AREAS AND METHOD FOR THEIR MANUFACTURE |
US10694607B1 (en) | 2019-06-24 | 2020-06-23 | Apple Inc. | Electronic devices with light sensor waveguides |
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2012
- 2012-10-24 JP JP2012234555A patent/JP6068091B2/ja active Active
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2013
- 2013-10-24 US US14/062,795 patent/US9368689B2/en active Active
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101748888B1 (ko) * | 2010-11-10 | 2017-06-19 | 닛토덴코 가부시키가이샤 | 반도체 장치의 제법 |
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US20140110738A1 (en) | 2014-04-24 |
US9368689B2 (en) | 2016-06-14 |
JP2014086574A (ja) | 2014-05-12 |
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