KR102359074B1 - 패턴 형성 방법, 전자 디바이스의 제조 방법, 키트 - Google Patents

패턴 형성 방법, 전자 디바이스의 제조 방법, 키트 Download PDF

Info

Publication number
KR102359074B1
KR102359074B1 KR1020197009119A KR20197009119A KR102359074B1 KR 102359074 B1 KR102359074 B1 KR 102359074B1 KR 1020197009119 A KR1020197009119 A KR 1020197009119A KR 20197009119 A KR20197009119 A KR 20197009119A KR 102359074 B1 KR102359074 B1 KR 102359074B1
Authority
KR
South Korea
Prior art keywords
formula
mass
chemical
impurity
repeating unit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020197009119A
Other languages
English (en)
Korean (ko)
Other versions
KR20190045270A (ko
Inventor
테츠야 카미무라
Original Assignee
후지필름 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 후지필름 가부시키가이샤 filed Critical 후지필름 가부시키가이샤
Priority to KR1020227003398A priority Critical patent/KR20220019072A/ko
Publication of KR20190045270A publication Critical patent/KR20190045270A/ko
Application granted granted Critical
Publication of KR102359074B1 publication Critical patent/KR102359074B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
    • C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
    • C08F220/10—Esters
    • C08F220/12—Esters of monohydric alcohols or phenols
    • C08F220/16—Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms
    • C08F220/18—Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms with acrylic or methacrylic acids
    • C08F220/1807—C7-(meth)acrylate, e.g. heptyl (meth)acrylate or benzyl (meth)acrylate
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
    • C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
    • C08F220/10—Esters
    • C08F220/26—Esters containing oxygen in addition to the carboxy oxygen
    • C08F220/28—Esters containing oxygen in addition to the carboxy oxygen containing no aromatic rings in the alcohol moiety
    • C08F220/283—Esters containing oxygen in addition to the carboxy oxygen containing no aromatic rings in the alcohol moiety and containing one or more carboxylic moiety in the chain, e.g. acetoacetoxyethyl(meth)acrylate
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0382—Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
    • G03F7/0758—Macromolecular compounds containing Si-O, Si-C or Si-N bonds with silicon- containing groups in the side chains
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers
    • G03F7/325—Non-aqueous compositions
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/38—Treatment before imagewise removal, e.g. prebaking
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • H01L21/027—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Organic Chemistry (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials For Photolithography (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Emergency Medicine (AREA)
  • Wire Bonding (AREA)
  • Manufacturing Of Printed Circuit Boards (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
KR1020197009119A 2016-09-30 2017-09-29 패턴 형성 방법, 전자 디바이스의 제조 방법, 키트 Active KR102359074B1 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020227003398A KR20220019072A (ko) 2016-09-30 2017-09-29 패턴 형성 방법, 전자 디바이스의 제조 방법, 키트

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2016194760 2016-09-30
JPJP-P-2016-194760 2016-09-30
PCT/JP2017/035443 WO2018062471A1 (ja) 2016-09-30 2017-09-29 パターン形成方法、電子デバイスの製造方法、キット

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020227003398A Division KR20220019072A (ko) 2016-09-30 2017-09-29 패턴 형성 방법, 전자 디바이스의 제조 방법, 키트

Publications (2)

Publication Number Publication Date
KR20190045270A KR20190045270A (ko) 2019-05-02
KR102359074B1 true KR102359074B1 (ko) 2022-02-07

Family

ID=61763496

Family Applications (3)

Application Number Title Priority Date Filing Date
KR1020197009119A Active KR102359074B1 (ko) 2016-09-30 2017-09-29 패턴 형성 방법, 전자 디바이스의 제조 방법, 키트
KR1020237028164A Active KR102689234B1 (ko) 2016-09-30 2017-09-29 패턴 형성 방법, 전자 디바이스의 제조 방법, 키트
KR1020227003398A Ceased KR20220019072A (ko) 2016-09-30 2017-09-29 패턴 형성 방법, 전자 디바이스의 제조 방법, 키트

Family Applications After (2)

Application Number Title Priority Date Filing Date
KR1020237028164A Active KR102689234B1 (ko) 2016-09-30 2017-09-29 패턴 형성 방법, 전자 디바이스의 제조 방법, 키트
KR1020227003398A Ceased KR20220019072A (ko) 2016-09-30 2017-09-29 패턴 형성 방법, 전자 디바이스의 제조 방법, 키트

Country Status (5)

Country Link
US (2) US11733611B2 (enExample)
JP (3) JP6703124B2 (enExample)
KR (3) KR102359074B1 (enExample)
TW (1) TWI795370B (enExample)
WO (1) WO2018062471A1 (enExample)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6890610B2 (ja) * 2016-11-18 2021-06-18 富士フイルム株式会社 薬液、薬液収容体、パターン形成方法、及び、キット
KR102828756B1 (ko) * 2018-07-13 2025-07-03 후지필름 가부시키가이샤 약액, 키트, 패턴 형성 방법, 약액의 제조 방법 및 약액 수용체
KR102837395B1 (ko) * 2018-10-03 2025-07-23 후지필름 가부시키가이샤 약액 및 약액 수용체
WO2020071042A1 (ja) 2018-10-03 2020-04-09 富士フイルム株式会社 薬液、薬液収容体、レジストパターン形成方法、半導体チップの製造方法
JP7166149B2 (ja) * 2018-11-15 2022-11-07 東京応化工業株式会社 レジスト組成物及びレジストパターン形成方法
JPWO2020179428A1 (enExample) 2019-03-04 2020-09-10
JP7342941B2 (ja) * 2019-03-08 2023-09-12 Jsr株式会社 感放射線性樹脂組成物及びレジストパターン形成方法
JP7292378B2 (ja) * 2019-03-29 2023-06-16 富士フイルム株式会社 処理液、パターン形成方法
JP7390470B2 (ja) * 2020-03-12 2023-12-01 富士フイルム株式会社 薬液の精製方法、薬液の製造方法、薬液
WO2022176685A1 (ja) * 2021-02-19 2022-08-25 富士フイルム株式会社 混合比率の決定方法、および、現像装置
WO2024004598A1 (ja) * 2022-06-29 2024-01-04 富士フイルム株式会社 感活性光線性又は感放射線性樹脂組成物、感活性光線性又は感放射線性膜、パターン形成方法、及び電子デバイスの製造方法
KR102515739B1 (ko) * 2022-12-07 2023-03-30 타코마테크놀러지 주식회사 감광성 수지 및 이를 포함하는 포토레지스트 조성물

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012032788A (ja) 2010-06-30 2012-02-16 Fujifilm Corp パターン形成方法及び該パターン形成方法に用いられる現像液

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000062513A (ja) * 1998-08-21 2000-02-29 Hino Motors Ltd 容器ホルダ
JP2000288458A (ja) * 1999-02-03 2000-10-17 Tokyo Electron Ltd 塗布膜形成方法および塗布装置
JP5002360B2 (ja) * 2007-07-23 2012-08-15 富士フイルム株式会社 パターン形成方法
JP5629520B2 (ja) * 2010-07-28 2014-11-19 富士フイルム株式会社 パターン形成方法及びこの方法に用いられる有機系処理液
JP5848869B2 (ja) 2010-08-25 2016-01-27 富士フイルム株式会社 パターン形成方法
JP6075124B2 (ja) * 2012-03-15 2017-02-08 Jsr株式会社 現像液の精製方法
JP5764589B2 (ja) * 2012-10-31 2015-08-19 富士フイルム株式会社 化学増幅型レジスト膜のパターニング用有機系処理液の収容容器、並びに、これらを使用したパターン形成方法及び電子デバイスの製造方法
JP6060012B2 (ja) * 2013-03-15 2017-01-11 富士フイルム株式会社 パターン形成方法、及び、電子デバイスの製造方法
JP5728517B2 (ja) * 2013-04-02 2015-06-03 富士フイルム株式会社 化学増幅型レジスト膜のパターニング用有機系処理液の製造方法、パターン形成方法、及び、電子デバイスの製造方法
JP6154653B2 (ja) * 2013-04-17 2017-06-28 アーゼッド・エレクトロニック・マテリアルズ（ルクセンブルグ）ソシエテ・ア・レスポンサビリテ・リミテ リソグラフィー用現像またはリンス液およびそれを用いたパターン形成方法
JP6185874B2 (ja) 2013-05-02 2017-08-23 富士フイルム株式会社 パターン形成方法、感活性光線性又は感放射線性樹脂組成物、レジスト膜、電子デバイスの製造方法、及び、電子デバイス
JP6186168B2 (ja) * 2013-05-02 2017-08-23 富士フイルム株式会社 パターン形成方法、及び電子デバイスの製造方法
JP6134619B2 (ja) * 2013-09-13 2017-05-24 富士フイルム株式会社 パターン形成方法、及び、電子デバイスの製造方法
JP6384424B2 (ja) 2014-09-04 2018-09-05 信越化学工業株式会社 レジスト組成物及びパターン形成方法
JP6427590B2 (ja) 2014-09-30 2018-11-21 富士フイルム株式会社 レジスト膜のパターニング用有機系処理液の製造方法、及び、レジスト膜のパターニング用有機系処理液が収容された収容容器、並びに、これらを使用したレジスト膜のパターニング用有機系処理液の保管方法、パターン形成方法、及び、電子デバイスの製造方法
JP2015084122A (ja) * 2015-01-08 2015-04-30 富士フイルム株式会社 化学増幅型レジスト膜のパターニング用有機系処理液
CN119846905A (zh) * 2016-03-31 2025-04-18 富士胶片株式会社 半导体制造用处理液、其制造方法、图案形成方法及电子器件的制造方法
JP6757411B2 (ja) * 2016-09-02 2020-09-16 富士フイルム株式会社 溶液、溶液収容体、感活性光線性又は感放射線性樹脂組成物、パターン形成方法、半導体デバイスの製造方法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012032788A (ja) 2010-06-30 2012-02-16 Fujifilm Corp パターン形成方法及び該パターン形成方法に用いられる現像液

Also Published As

Publication number Publication date
TW201819434A (zh) 2018-06-01
JPWO2018062471A1 (ja) 2019-07-04
KR102689234B1 (ko) 2024-07-30
US20230333478A1 (en) 2023-10-19
TWI795370B (zh) 2023-03-11
WO2018062471A1 (ja) 2018-04-05
KR20190045270A (ko) 2019-05-02
JP2018060193A (ja) 2018-04-12
KR20230128388A (ko) 2023-09-04
JP6703124B2 (ja) 2020-06-03
KR20220019072A (ko) 2022-02-15
US11733611B2 (en) 2023-08-22
JP2020122985A (ja) 2020-08-13
US20190227435A1 (en) 2019-07-25

Similar Documents

Publication Publication Date Title
KR102359074B1 (ko) 패턴 형성 방법, 전자 디바이스의 제조 방법, 키트
KR102407582B1 (ko) 반도체 칩의 제조 방법 및 패턴 형성 방법
KR102282589B1 (ko) 약액, 약액 수용체, 패턴 형성 방법, 및 키트
KR102088653B1 (ko) 처리액 및 처리액 수용체
TWI764923B (zh) 溶液、溶液收容體、感光化射線性或感放射線性樹脂組成物、圖案形成方法、半導體裝置的製造方法
TWI822658B (zh) 有機溶劑的精製方法及有機溶劑的精製裝置
JP6757412B2 (ja) 溶液、溶液収容体、感活性光線性又は感放射線性樹脂組成物、パターン形成方法、半導体デバイスの製造方法
KR102245548B1 (ko) 반도체 제조용 처리액, 그 제조 방법, 패턴 형성 방법 및 전자 디바이스의 제조 방법
JPWO2018061573A1 (ja) 薬液、薬液収容体、薬液の充填方法、及び、薬液の保管方法

Legal Events

Date Code Title Description
A201 Request for examination
P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

D13-X000 Search requested

St.27 status event code: A-1-2-D10-D13-srh-X000

D14-X000 Search report completed

St.27 status event code: A-1-2-D10-D14-srh-X000

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E90F Notification of reason for final refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PA0104 Divisional application for international application

St.27 status event code: A-0-1-A10-A18-div-PA0104

St.27 status event code: A-0-1-A10-A16-div-PA0104

PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U12-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000