KR102281623B1 - 반도체 장치 - Google Patents

반도체 장치 Download PDF

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KR102281623B1
KR102281623B1 KR1020140124625A KR20140124625A KR102281623B1 KR 102281623 B1 KR102281623 B1 KR 102281623B1 KR 1020140124625 A KR1020140124625 A KR 1020140124625A KR 20140124625 A KR20140124625 A KR 20140124625A KR 102281623 B1 KR102281623 B1 KR 102281623B1
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film
insulating film
oxide semiconductor
oxide
transistor
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KR20150034093A (ko
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순페이 야마자키
준이치 코에주카
켄이치 오카자키
야스하루 호사카
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가부시키가이샤 한도오따이 에네루기 켄큐쇼
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Priority to KR1020210093447A priority Critical patent/KR102416118B1/ko
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/481—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs integrated with passive devices, e.g. auxiliary capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices

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  • Thin Film Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
  • Non-Volatile Memory (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electroluminescent Light Sources (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
KR1020140124625A 2013-09-25 2014-09-18 반도체 장치 Active KR102281623B1 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020210093447A KR102416118B1 (ko) 2013-09-25 2021-07-16 반도체 장치

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2013198891 2013-09-25
JPJP-P-2013-198891 2013-09-25

Related Child Applications (1)

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Publications (2)

Publication Number Publication Date
KR20150034093A KR20150034093A (ko) 2015-04-02
KR102281623B1 true KR102281623B1 (ko) 2021-07-23

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KR1020210093447A Active KR102416118B1 (ko) 2013-09-25 2021-07-16 반도체 장치

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US (2) US9905586B2 (enExample)
JP (8) JP6383616B2 (enExample)
KR (2) KR102281623B1 (enExample)

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JP6488124B2 (ja) * 2013-12-27 2019-03-20 株式会社半導体エネルギー研究所 半導体装置
KR20220046701A (ko) * 2013-12-27 2022-04-14 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광 장치
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CN107534057B (zh) 2015-04-20 2021-04-30 株式会社半导体能源研究所 半导体装置及电子设备
US9837547B2 (en) 2015-05-22 2017-12-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising oxide conductor and display device including the semiconductor device
US10139663B2 (en) * 2015-05-29 2018-11-27 Semiconductor Energy Laboratory Co., Ltd. Input/output device and electronic device
DE112016005330T5 (de) * 2015-11-20 2018-08-23 Semiconductor Energy Laboratory Co., Ltd. Halbleitervorrichtung, Herstellungsverfahren der Halbleitervorrichtung oder Anzeigevorrichtung, die die Halbleitervorrichtung beinhaltet
CN115954389A (zh) 2016-03-04 2023-04-11 株式会社半导体能源研究所 半导体装置以及包括该半导体装置的显示装置
US10388738B2 (en) * 2016-04-01 2019-08-20 Semiconductor Energy Laboratory Co., Ltd. Composite oxide semiconductor and method for manufacturing the same
US11530134B2 (en) 2017-03-13 2022-12-20 Semiconductor Energy Laboratory Co., Ltd. Composite oxide comprising In and Zn, and transistor
JP2018157101A (ja) 2017-03-17 2018-10-04 東芝メモリ株式会社 トランジスタ、メモリ及びトランジスタの製造方法
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JP7066672B2 (ja) * 2019-12-19 2022-05-13 株式会社半導体エネルギー研究所 半導体装置
CN111785656B (zh) * 2020-07-28 2023-08-15 哈尔滨工业大学 电子器件氧化层中固定负电荷陷阱的检测方法
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