KR102249339B1 - 칩 간격 유지 장치 및 칩 간격 유지 방법 - Google Patents

칩 간격 유지 장치 및 칩 간격 유지 방법 Download PDF

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KR102249339B1
KR102249339B1 KR1020150063009A KR20150063009A KR102249339B1 KR 102249339 B1 KR102249339 B1 KR 102249339B1 KR 1020150063009 A KR1020150063009 A KR 1020150063009A KR 20150063009 A KR20150063009 A KR 20150063009A KR 102249339 B1 KR102249339 B1 KR 102249339B1
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KR1020150063009A
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KR20150128579A (ko
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아츠시 우에키
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가부시기가이샤 디스코
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Publication of KR102249339B1 publication Critical patent/KR102249339B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
    • H01L21/46—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428
    • H01L21/461—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Dicing (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
KR1020150063009A 2014-05-08 2015-05-06 칩 간격 유지 장치 및 칩 간격 유지 방법 KR102249339B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2014-096486 2014-05-08
JP2014096486A JP6266429B2 (ja) 2014-05-08 2014-05-08 チップ間隔維持装置及びチップ間隔維持方法

Publications (2)

Publication Number Publication Date
KR20150128579A KR20150128579A (ko) 2015-11-18
KR102249339B1 true KR102249339B1 (ko) 2021-05-06

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ID=54577644

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020150063009A KR102249339B1 (ko) 2014-05-08 2015-05-06 칩 간격 유지 장치 및 칩 간격 유지 방법

Country Status (4)

Country Link
JP (1) JP6266429B2 (ja)
KR (1) KR102249339B1 (ja)
CN (1) CN105097479A (ja)
TW (1) TWI653674B (ja)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6741529B2 (ja) * 2016-09-09 2020-08-19 株式会社ディスコ チップ間隔維持方法
JP6820099B2 (ja) * 2017-05-10 2021-01-27 リンテック株式会社 離間装置および離間方法
JP6934327B2 (ja) * 2017-06-07 2021-09-15 株式会社ディスコ ウエーハの分割方法及び分割装置
JP6847529B2 (ja) * 2017-06-15 2021-03-24 株式会社ディスコ 被加工物の切削方法
JP7109916B2 (ja) * 2017-12-27 2022-08-01 株式会社ディスコ 分割装置
JP7112205B2 (ja) * 2018-02-13 2022-08-03 株式会社ディスコ 分割装置
JP7321883B2 (ja) * 2019-10-18 2023-08-07 株式会社ディスコ シートの拡張方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010147317A (ja) * 2008-12-19 2010-07-01 Disco Abrasive Syst Ltd テープ拡張方法およびテープ拡張装置
JP2010263164A (ja) 2009-05-11 2010-11-18 Disco Abrasive Syst Ltd 粘着テープの拡張方法
JP2011216508A (ja) 2010-03-31 2011-10-27 Furukawa Electric Co Ltd:The ウエハ加工用テープ
JP2012186447A (ja) 2011-02-16 2012-09-27 Tokyo Seimitsu Co Ltd ワーク分割装置及びワーク分割方法
JP5791866B2 (ja) 2009-03-06 2015-10-07 株式会社ディスコ ワーク分割装置

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2004038779A1 (ja) * 2002-10-28 2004-05-06 Tokyo Seimitsu Co., Ltd. エキスパンド方法及びエキスパンド装置
JP4247670B2 (ja) * 2003-07-22 2009-04-02 株式会社東京精密 エキスパンド方法及びエキスパンド装置
JP4288392B2 (ja) * 2003-09-29 2009-07-01 株式会社東京精密 エキスパンド方法
JP4238669B2 (ja) * 2003-08-07 2009-03-18 株式会社東京精密 エキスパンド方法及びエキスパンド装置
JP4851795B2 (ja) 2006-01-13 2012-01-11 株式会社ディスコ ウエーハの分割装置
JP5988599B2 (ja) * 2012-02-09 2016-09-07 株式会社ディスコ 被加工物の分割方法
JP5985245B2 (ja) * 2012-05-15 2016-09-06 株式会社ディスコ チップ間隔維持装置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010147317A (ja) * 2008-12-19 2010-07-01 Disco Abrasive Syst Ltd テープ拡張方法およびテープ拡張装置
JP5791866B2 (ja) 2009-03-06 2015-10-07 株式会社ディスコ ワーク分割装置
JP2010263164A (ja) 2009-05-11 2010-11-18 Disco Abrasive Syst Ltd 粘着テープの拡張方法
JP2011216508A (ja) 2010-03-31 2011-10-27 Furukawa Electric Co Ltd:The ウエハ加工用テープ
JP2012186447A (ja) 2011-02-16 2012-09-27 Tokyo Seimitsu Co Ltd ワーク分割装置及びワーク分割方法

Also Published As

Publication number Publication date
TW201543559A (zh) 2015-11-16
TWI653674B (zh) 2019-03-11
KR20150128579A (ko) 2015-11-18
JP2015216151A (ja) 2015-12-03
CN105097479A (zh) 2015-11-25
JP6266429B2 (ja) 2018-01-24

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