KR102244625B1 - 온도 프로파일 제어를 갖는 가열식 기판 지지부 - Google Patents

온도 프로파일 제어를 갖는 가열식 기판 지지부 Download PDF

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KR102244625B1
KR102244625B1 KR1020167009634A KR20167009634A KR102244625B1 KR 102244625 B1 KR102244625 B1 KR 102244625B1 KR 1020167009634 A KR1020167009634 A KR 1020167009634A KR 20167009634 A KR20167009634 A KR 20167009634A KR 102244625 B1 KR102244625 B1 KR 102244625B1
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South Korea
Prior art keywords
shaft
plate
heater
substrate support
layer
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KR1020167009634A
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English (en)
Korean (ko)
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KR20160055257A (ko
Inventor
니르 메리
레온 볼포브스키
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어플라이드 머티어리얼스, 인코포레이티드
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    • H01L21/67103—
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00—Ohmic-resistance heating
    • H05B3/20—Heating elements having extended surface area substantially in a two-dimensional [2D] plane, e.g. plate-heater
    • H05B3/22—Heating elements having extended surface area substantially in a two-dimensional [2D] plane, e.g. plate-heater non-flexible
    • H05B3/28—Heating elements having extended surface area substantially in a two-dimensional [2D] plane, e.g. plate-heater non-flexible heating conductor embedded in insulating material
    • H05B3/283—Heating elements having extended surface area substantially in a two-dimensional [2D] plane, e.g. plate-heater non-flexible heating conductor embedded in insulating material the insulating material being an inorganic material, e.g. ceramic
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H01L21/67248—
    • H01L21/683—
    • H01L21/68792—
    • H01L23/34—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0432—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0602—Temperature monitoring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7626—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the construction of the shaft
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49082—Resistor making
    • Y10T29/49083—Heater type

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Ceramic Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Chemical Vapour Deposition (AREA)
  • Resistance Heating (AREA)
  • Physical Vapour Deposition (AREA)
KR1020167009634A 2013-09-16 2014-09-10 온도 프로파일 제어를 갖는 가열식 기판 지지부 Active KR102244625B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201361878370P 2013-09-16 2013-09-16
US61/878,370 2013-09-16
US14/481,283 US9698074B2 (en) 2013-09-16 2014-09-09 Heated substrate support with temperature profile control
US14/481,283 2014-09-09
PCT/US2014/054945 WO2015038610A1 (en) 2013-09-16 2014-09-10 Heated substrate support with temperature profile control

Publications (2)

Publication Number Publication Date
KR20160055257A KR20160055257A (ko) 2016-05-17
KR102244625B1 true KR102244625B1 (ko) 2021-04-23

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020167009634A Active KR102244625B1 (ko) 2013-09-16 2014-09-10 온도 프로파일 제어를 갖는 가열식 기판 지지부

Country Status (6)

Country Link
US (1) US9698074B2 (https=)
JP (1) JP6404355B2 (https=)
KR (1) KR102244625B1 (https=)
CN (1) CN105556656B (https=)
TW (1) TWI645498B (https=)
WO (1) WO2015038610A1 (https=)

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US9972477B2 (en) 2014-06-28 2018-05-15 Applied Materials, Inc. Multiple point gas delivery apparatus for etching materials
US10186437B2 (en) * 2015-10-05 2019-01-22 Lam Research Corporation Substrate holder having integrated temperature measurement electrical devices
EP3414541B1 (en) * 2016-02-08 2020-09-30 Watlow Electric Manufacturing Company Temperature sensing system for rotatable wafer support assembly
US10184183B2 (en) * 2016-06-21 2019-01-22 Applied Materials, Inc. Substrate temperature monitoring
TWI729447B (zh) 2016-09-22 2021-06-01 美商應用材料股份有限公司 用於寬範圍溫度控制的加熱器基座組件
JP6704834B2 (ja) * 2016-10-28 2020-06-03 日本特殊陶業株式会社 加熱装置
KR102329130B1 (ko) * 2017-02-28 2021-11-19 닛폰 하츠죠 가부시키가이샤 기판 지지 유닛 및 기판 지지 유닛을 가지는 성막장치
WO2018213621A2 (en) 2017-05-18 2018-11-22 Applied Materials, Inc. Thermal chamber with improved thermal uniformity
JP7049818B2 (ja) * 2017-12-13 2022-04-07 東京エレクトロン株式会社 成膜装置
WO2019180785A1 (ja) * 2018-03-19 2019-09-26 日新電機株式会社 基板加熱システム及び基板処理装置
JP6952633B2 (ja) * 2018-03-23 2021-10-20 東京エレクトロン株式会社 基板加熱装置及びこれを用いた基板処理装置
KR20230058534A (ko) * 2018-03-23 2023-05-03 엔지케이 인슐레이터 엘티디 멀티 존 히터
KR102098556B1 (ko) * 2018-07-09 2020-04-17 주식회사 테스 기판지지유닛 및 이를 구비한 기판처리장치
WO2020086122A1 (en) * 2018-10-24 2020-04-30 Applied Materials, Inc. Substrate support designs for a deposition chamber
CN111383891B (zh) * 2018-12-29 2023-03-10 中微半导体设备(上海)股份有限公司 用于半导体处理设备的温度控制装置及其温度控制方法
KR102628367B1 (ko) * 2019-03-18 2024-01-24 엔지케이 인슐레이터 엘티디 세라믹 히터 및 그의 제법
CN110060913A (zh) * 2019-04-22 2019-07-26 德淮半导体有限公司 离子植入机以及监测离子植入机中离子束的方法
KR102638093B1 (ko) * 2019-07-01 2024-02-16 엔지케이 인슐레이터 엘티디 샤프트가 있는 세라믹 히터
CN114175851B (zh) * 2019-07-16 2024-06-25 日本碍子株式会社 带轴的陶瓷加热器
JP7174159B2 (ja) * 2019-07-16 2022-11-17 日本碍子株式会社 シャフト付きセラミックヒータ
JP7430617B2 (ja) * 2020-10-16 2024-02-13 日本碍子株式会社 ウエハ載置台
JP7375069B2 (ja) * 2022-03-07 2023-11-07 株式会社Kokusai Electric 基板処理装置、半導体装置の製造方法及びプログラム
US20250125181A1 (en) * 2023-10-12 2025-04-17 Applied Materials, Inc. Low temperature electrostatic chuck
US20250227851A1 (en) * 2024-01-08 2025-07-10 Tokyo Electron Limited Substrate support with printed heater

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JP2008527746A (ja) * 2005-01-13 2008-07-24 ワトロウ エレクトリック マニュファクチュアリング カンパニー ウエーハ加工用ヒーターと該ヒーターの操作及び製造の方法

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JP2001118662A (ja) * 1999-08-09 2001-04-27 Ibiden Co Ltd セラミックヒータ
JP4637316B2 (ja) * 2000-02-24 2011-02-23 京セラ株式会社 筒状体を有するセラミックヒーター及びこれを用いた加熱装置
US7273526B2 (en) * 2004-04-15 2007-09-25 Asm Japan K.K. Thin-film deposition apparatus
JP4435742B2 (ja) * 2005-08-09 2010-03-24 信越化学工業株式会社 加熱素子
JP4889385B2 (ja) 2006-07-07 2012-03-07 日本発條株式会社 ヒータユニットおよびシャフト
JP4294661B2 (ja) * 2006-07-26 2009-07-15 国立大学法人東北大学 基板ステージ、熱処理装置および基板ステージの製造方法
JP5135915B2 (ja) * 2007-06-28 2013-02-06 東京エレクトロン株式会社 載置台構造及び熱処理装置
KR101305760B1 (ko) * 2008-03-21 2013-09-17 엔지케이 인슐레이터 엘티디 세라믹스 히터
JP5358543B2 (ja) * 2009-09-17 2013-12-04 日本碍子株式会社 セラミックスヒーター及びその製造方法
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JP5666167B2 (ja) 2010-05-07 2015-02-12 日本発條株式会社 ステージヒータ及びシャフトの製造方法
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Also Published As

Publication number Publication date
WO2015038610A1 (en) 2015-03-19
JP6404355B2 (ja) 2018-10-10
JP2016536803A (ja) 2016-11-24
TWI645498B (zh) 2018-12-21
US20150076135A1 (en) 2015-03-19
US9698074B2 (en) 2017-07-04
CN105556656A (zh) 2016-05-04
TW201515145A (zh) 2015-04-16
CN105556656B (zh) 2018-11-02
KR20160055257A (ko) 2016-05-17

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