KR102134943B1 - 반도체 샘플의 계측을 수행하기 위한 타원편광 측정기 장치 - Google Patents

반도체 샘플의 계측을 수행하기 위한 타원편광 측정기 장치 Download PDF

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KR102134943B1
KR102134943B1 KR1020167009901A KR20167009901A KR102134943B1 KR 102134943 B1 KR102134943 B1 KR 102134943B1 KR 1020167009901 A KR1020167009901 A KR 1020167009901A KR 20167009901 A KR20167009901 A KR 20167009901A KR 102134943 B1 KR102134943 B1 KR 102134943B1
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illumination
aoi
sample
polarization
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KR20160055908A (ko
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데이빗 와이. 왕
클라우스 플록
로렌스 디. 로터
샨카르 크리쉬난
비어 요하네스 디. 드
캐털린 필립
그레고리 브레이디
무잠밀 아라인
안드레이 스케그로프
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케이엘에이 코포레이션
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    • H01L22/12—
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/21—Polarisation-affecting properties
    • G01N21/211—Ellipsometry
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
    • G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
    • G01B11/0616—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating
    • G01B11/0641—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating with measurement of polarization
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/8806—Specially adapted optical and illumination features
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501—Semiconductor wafers
    • H01L21/02348—
    • H01L21/268—
    • H01L22/30—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
    • H10P14/6536—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to radiation, e.g. visible light
    • H10P14/6538—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to radiation, e.g. visible light by exposure to UV light
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P34/00—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices
    • H10P34/40—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation
    • H10P34/42—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation with electromagnetic radiation, e.g. laser annealing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/27—Structural arrangements therefor

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Spectrometry And Color Measurement (AREA)
  • Investigating, Analyzing Materials By Fluorescence Or Luminescence (AREA)
KR1020167009901A 2013-09-16 2014-09-15 반도체 샘플의 계측을 수행하기 위한 타원편광 측정기 장치 Active KR102134943B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201361878561P 2013-09-16 2013-09-16
US61/878,561 2013-09-16
US14/043,783 2013-10-01
US14/043,783 US9116103B2 (en) 2013-01-14 2013-10-01 Multiple angles of incidence semiconductor metrology systems and methods
PCT/US2014/055666 WO2015039031A1 (en) 2013-09-16 2014-09-15 Multiple angles of incidence semiconductor metrology systems and methods

Related Child Applications (1)

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KR1020207019773A Division KR102216201B1 (ko) 2013-09-16 2014-09-15 반도체 샘플의 계측을 수행하기 위한 타원편광 측정기 장치

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KR20160055908A KR20160055908A (ko) 2016-05-18
KR102134943B1 true KR102134943B1 (ko) 2020-08-26

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KR1020207019773A Active KR102216201B1 (ko) 2013-09-16 2014-09-15 반도체 샘플의 계측을 수행하기 위한 타원편광 측정기 장치

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EP (3) EP3624174B1 (https=)
JP (6) JP6688732B2 (https=)
KR (2) KR102134943B1 (https=)
CN (1) CN105051877B (https=)
IL (2) IL239666B (https=)
WO (1) WO2015039031A1 (https=)

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KR20220125160A (ko) * 2021-03-04 2022-09-14 샹하이 프리시전 메져먼트 세미콘덕터 테크놀러지 인코포레이티드 반사광 변화를 탐측하는 장치, 방법 및 막 두께 측정 장치
KR20220125159A (ko) * 2021-03-04 2022-09-14 샹하이 프리시전 메져먼트 세미콘덕터 테크놀러지 인코포레이티드 반사광 변화를 탐측하는 장치 및 방법, 막 두께 측정 장치
KR102492803B1 (ko) 2022-04-19 2023-01-31 (주)오로스테크놀로지 조리개를 이용하여 입사 각도 또는 개구수를 조절하는 편광 분석 장치 및 방법

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CN112213272B (zh) * 2019-07-10 2024-01-12 中微半导体设备(上海)股份有限公司 一种光谱检测设备、终点检测系统和方法
CN110832631A (zh) * 2019-10-12 2020-02-21 长江存储科技有限责任公司 用于检测深度特征中的缺陷的方法
US11226234B2 (en) * 2020-01-22 2022-01-18 Applied Materials, Inc. Spectrum shaping devices and techniques for optical characterization applications
CN114428081A (zh) * 2021-12-15 2022-05-03 赣州市同兴达电子科技有限公司 复测aoi抛料可视化复判方法
KR102521324B1 (ko) * 2022-03-03 2023-04-20 (주)오로스 테크놀로지 입사각을 갖는 오프-액시스 광학계의 정렬 방법
CN117980620A (zh) 2022-05-13 2024-05-03 日本精工株式会社 反向输入切断离合器
CN115290571A (zh) * 2022-08-16 2022-11-04 深圳市埃芯半导体科技有限公司 测量设备和测量方法
CN115389022B (zh) * 2022-08-19 2024-01-26 深圳市埃芯半导体科技有限公司 椭偏仪
KR102621281B1 (ko) * 2022-11-22 2024-01-05 (주)오로스테크놀로지 광 계측기
CN116518851A (zh) * 2023-03-31 2023-08-01 江苏匠岭半导体有限公司 光学测量组件、半导体光学膜厚和线宽测量装置与方法
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KR20220125160A (ko) * 2021-03-04 2022-09-14 샹하이 프리시전 메져먼트 세미콘덕터 테크놀러지 인코포레이티드 반사광 변화를 탐측하는 장치, 방법 및 막 두께 측정 장치
KR20220125159A (ko) * 2021-03-04 2022-09-14 샹하이 프리시전 메져먼트 세미콘덕터 테크놀러지 인코포레이티드 반사광 변화를 탐측하는 장치 및 방법, 막 두께 측정 장치
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IL280388A (en) 2021-03-01
KR20200085938A (ko) 2020-07-15
EP3047520A1 (en) 2016-07-27
EP3624174B1 (en) 2024-08-21
WO2015039031A1 (en) 2015-03-19
JP6688732B2 (ja) 2020-04-28
EP3624174A2 (en) 2020-03-18
KR20160055908A (ko) 2016-05-18
CN105051877B (zh) 2019-02-22
JP2022079538A (ja) 2022-05-26
EP3971950B1 (en) 2024-11-06
EP3047520A4 (en) 2017-07-12
IL239666B (en) 2021-02-28
IL280388B (en) 2022-02-01
EP3047520B1 (en) 2019-11-06
CN105051877A (zh) 2015-11-11
EP3971950A1 (en) 2022-03-23
KR102216201B1 (ko) 2021-02-15
JP2025081595A (ja) 2025-05-27
JP2023014136A (ja) 2023-01-26
JP2016536609A (ja) 2016-11-24
IL239666A0 (en) 2015-08-31
EP3624174A3 (en) 2020-06-03
JP2025026544A (ja) 2025-02-21
JP2020128986A (ja) 2020-08-27

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