JP2013504063A - 計測システムおよび計測方法 - Google Patents
計測システムおよび計測方法 Download PDFInfo
- Publication number
- JP2013504063A JP2013504063A JP2012528011A JP2012528011A JP2013504063A JP 2013504063 A JP2013504063 A JP 2013504063A JP 2012528011 A JP2012528011 A JP 2012528011A JP 2012528011 A JP2012528011 A JP 2012528011A JP 2013504063 A JP2013504063 A JP 2013504063A
- Authority
- JP
- Japan
- Prior art keywords
- detector
- light
- grating target
- scatterometry
- scattered light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/47—Scattering, i.e. diffuse reflection
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/9501—Semiconductor wafers
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/956—Inspecting patterns on the surface of objects
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
- G03F7/70625—Dimensions, e.g. line width, critical dimension [CD], profile, sidewall angle or edge roughness
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
- G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
- G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
- G01B11/0616—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating
- G01B11/0641—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating with measurement of polarization
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B2210/00—Aspects not specifically covered by any group under G01B, e.g. of wheel alignment, caliper-like sensors
- G01B2210/56—Measuring geometric parameters of semiconductor structures, e.g. profile, critical dimensions or trench depth
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/47—Scattering, i.e. diffuse reflection
- G01N2021/4792—Polarisation of scatter light
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/21—Polarisation-affecting properties
- G01N21/211—Ellipsometry
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N2201/00—Features of devices classified in G01N21/00
- G01N2201/06—Illumination; Optics
- G01N2201/061—Sources
- G01N2201/06113—Coherent sources; lasers
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N2201/00—Features of devices classified in G01N21/00
- G01N2201/10—Scanning
- G01N2201/105—Purely optical scan
Landscapes
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Health & Medical Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Length Measuring Devices By Optical Means (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Investigating Or Analysing Materials By Optical Means (AREA)
- Investigating, Analyzing Materials By Fluorescence Or Luminescence (AREA)
- Pharmaceuticals Containing Other Organic And Inorganic Compounds (AREA)
- Optical Measuring Cells (AREA)
- Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
- Drying Of Semiconductors (AREA)
Abstract
【選択図】図1
Description
本出願は、参照により全体が本明細書に組み込まれる、発明の名称を「Multifunction Metrology System(多機能計測システム)」とする、2009年9月3日出願の米国特許出願第61/239,699号に基づく優先権を主張する。
Claims (22)
- 計測システムであって、
回折限界光ビームを生成するように構成されている光源と、
ウェハ平面内の照射スポットの中心から1.5マイクロメートル離れた位置における放射照度が、前記スポットの前記中心のピーク放射照度の10-6未満となる方法で照射光学装置の入射瞳内の前記光ビームを成形するように構成されているアポダイザーと、
前記アポダイザーからの前記回折限界光ビームを、ウェハ上の回折格子標的上の前記照射スポットへと方向付け、かつ前記回折格子標的からの散乱光を収集するように構成されている光学素子と、
前記収集された散乱光の一部を排除するように構成されている視野絞りと、
前記視野絞りを通過する前記散乱光を検出し、前記検出された散乱光に応答して出力を生成することにより、スキャタロメトリを使用する前記計測システムによって前記回折格子標的が測定されるように構成されている検出器と、
前記出力を使用して、前記回折格子標的の特性を判定するように構成されているコンピュータシステムと、
を備える、計測システム。 - 前記光源は、レーザーおよび単一モードファイバーを備える、請求項1に記載の計測システム。
- 前記回折格子標的上の前記照射スポットは、3マイクロメートル未満の直径を有する、請求項1に記載の計測システム。
- 前記回折格子標的は、10マイクロメートル未満×10マイクロメートル未満の横方向寸法を有する、請求項1に記載の計測システム。
- 前記計測システムは、前記回折格子標的を横断して前記照射スポットを走査する間に、前記回折格子標的からの前記散乱光が収集されているように構成されている、請求項1に記載の計測システム。
- 前記スキャタロメトリは、角度分解スキャタロメトリを含む、請求項1に記載の計測システム。
- 前記スキャタロメトリは、複数の離散的波長を使用して実行される、角度分解スキャタロメトリを含む、請求項1に記載の計測システム。
- 前記スキャタロメトリは、分光スキャタロメトリを含む、請求項1に記載の計測システム。
- 前記スキャタロメトリは、複数の離散的角度を使用して実行される、分光スキャタロメトリを含む、請求項1に記載の計測システム。
- 前記光学素子は、前記回折限界光ビームの経路内に配置される偏光子、および前記収集された散乱光の経路内に配置される検光子を備え、前記偏光子および前記検光子は、複数の偏光状態を使用して前記スキャタロメトリを実行することができるように構成されている、請求項1に記載の計測システム。
- 前記光学素子は、前記回折限界光ビームの経路内に配置される偏光子、および前記収集された散乱光の経路内に配置される検光子を備え、前記計測システムは、少なくとも、前記光源、前記偏光子および前記検光子を備える前記光学素子、ならびに前記ウェハのエリプソメトリ測定を実行するための前記検出器を使用するように構成されている、請求項1に記載の計測システム。
- 前記コンピュータシステムは、前記エリプソメトリ測定中に前記検出器によって生成される出力を使用して、前記ウェハ上に形成されたフィルムの特性を判定するように更に構成されている、請求項11に記載の計測システム。
- 前記視野絞りは、前記収集された散乱光が沿って移動する光軸上に中心を置かず、これにより、前記検出器上における、前記収集された散乱光のゴースト発生を低減する、請求項1に記載の計測システム。
- 前記光学素子は、前記光学素子の結像瞳内の局所領域に前記収集された散乱光のゴースト像を集中させて、あるいは前記結像瞳全体にわたって前記ゴースト像を拡散させて、前記ゴースト像の放射照度を低減するように更に構成されている、請求項1に記載の計測システム。
- 前記特性は、前記回折格子標的におけるパターン構造の限界寸法を含む、請求項1に記載の計測システム。
- 前記特性は、前記ウェハ上に形成されている別の回折格子標的のパターン構造に関する、前記回折格子標的内におけるパターン構造の重ね合わせを含み、前記回折格子標的および前記他の回折格子標的は、前記ウェハの異なる層上に形成される、請求項1に記載の計測システム。
- 前記ウェハの像を生成するように構成される追加的検出器を備え、前記コンピュータシステムは、前記像を使用して、前記回折格子標的の追加的特性を判定するように更に構成されている、請求項1に記載の計測システム。
- 前記特性は、スキャタロメトリに基づく重ね合わせを含み、前記追加的特性は、結像に基づく重ね合わせを含む、請求項17に記載の計測システム。
- 前記光学素子は、前記回折格子標的からの前記散乱光を収集するように構成され、かつ前記像を生成するために使用される前記ウェハからの光を収集するように構成されている対物レンズを含む、請求項17に記載の計測システム。
- 前記光学素子は、前記視野絞りを通過する前記散乱光を、前記検出器の第1の部分のみへと方向付けるように更に構成され、前記光学素子は、前記回折限界光ビームの一部を、最初に前記ウェハへと方向付けることなく、前記検出器の第2の部分のみへと方向付けるように更に構成され、前記検出器の前記第2の部分は、前記検出器の前記第1の部分と重複しない、請求項1に記載の計測システム。
- 前記光学素子は、前記視野絞りを通過する前記散乱光を、前記検出器の第1の部分のみへと方向付けるように更に構成され、前記検出器の第2の部分は光を認識せず、前記検出器の前記第2の部分のみによって生成される出力は、前記検出器の前記第1の部分内の前記検出された散乱光に応答して前記検出器によって生成される前記出力を較正するために前記コンピュータシステムによって使用され、前記検出器の前記第2の部分は、前記検出器の前記第1の部分と重複しない、請求項1に記載の計測システム。
- 計測方法であって、
ウェハ平面内の照射スポットの中心から1.5マイクロメートル離れた位置における放射照度が、前記スポットの前記中心のピーク放射照度の10-6未満となる方式で照射光学装置の入射瞳内の回折限界光ビームを成形することと、
ウェハ上の回折格子標的上の前記照射スポットへ前記回折限界光ビームを方向付けることと、
前記回折格子標的からの散乱光を収集することと、
前記回折格子標的からの前記収集された散乱光の一部分を排除することと、
前記排除に続いて、前記散乱光を検出することと、
前記検出された散乱光に応答して出力を生成することと、
前記出力を使用して、前記回折格子標的の特性を判定することと、
を備える、計測方法。
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US23969909P | 2009-09-03 | 2009-09-03 | |
US61/239,699 | 2009-09-03 | ||
US12/872,988 | 2010-08-31 | ||
US12/872,988 US8441639B2 (en) | 2009-09-03 | 2010-08-31 | Metrology systems and methods |
PCT/US2010/047539 WO2011028807A2 (en) | 2009-09-03 | 2010-09-01 | Metrology systems and methods |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2015111802A Division JP6363557B2 (ja) | 2009-09-03 | 2015-06-02 | 計測システムおよび計測方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2013504063A true JP2013504063A (ja) | 2013-02-04 |
JP5801307B2 JP5801307B2 (ja) | 2015-10-28 |
Family
ID=43649947
Family Applications (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2012528011A Active JP5801307B2 (ja) | 2009-09-03 | 2010-09-01 | 計測システムおよび計測方法 |
JP2015111802A Active JP6363557B2 (ja) | 2009-09-03 | 2015-06-02 | 計測システムおよび計測方法 |
JP2017136680A Active JP6377218B2 (ja) | 2009-09-03 | 2017-07-13 | 計測システムおよび計測方法 |
Family Applications After (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2015111802A Active JP6363557B2 (ja) | 2009-09-03 | 2015-06-02 | 計測システムおよび計測方法 |
JP2017136680A Active JP6377218B2 (ja) | 2009-09-03 | 2017-07-13 | 計測システムおよび計測方法 |
Country Status (8)
Country | Link |
---|---|
US (3) | US8441639B2 (ja) |
EP (1) | EP2474027B1 (ja) |
JP (3) | JP5801307B2 (ja) |
KR (1) | KR101800471B1 (ja) |
CN (3) | CN102668052B (ja) |
IL (1) | IL218180A0 (ja) |
SG (1) | SG178432A1 (ja) |
WO (1) | WO2011028807A2 (ja) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013080921A (ja) * | 2011-10-03 | 2013-05-02 | Asml Holding Nv | 検査装置、リソグラフィ装置、およびデバイス製造方法 |
KR20160055908A (ko) * | 2013-09-16 | 2016-05-18 | 케이엘에이-텐코 코포레이션 | 다수의 입사각 반도체 계측 시스템 및 방법 |
JP2018179998A (ja) * | 2012-06-26 | 2018-11-15 | ケーエルエー−テンカー コーポレイション | 角度分解反射率測定における走査および回折の光計測からのアルゴリズム的除去 |
JP2019502928A (ja) * | 2016-01-22 | 2019-01-31 | ケーエルエー−テンカー コーポレイション | 改善されたスポットサイズ能力を有する単波長エリプソメトリー |
CN110546749A (zh) * | 2017-03-29 | 2019-12-06 | 东京毅力科创株式会社 | 用于蚀刻处理监测的高级光学传感器、系统和方法 |
JP7431824B2 (ja) | 2018-11-21 | 2024-02-15 | ケーエルエー コーポレイション | スキャトロメトリオーバーレイ(scol)測定方法及びscol測定システム |
US11961721B2 (en) | 2018-07-31 | 2024-04-16 | Tokyo Electron Limited | Normal-incidence in-situ process monitor sensor |
Families Citing this family (57)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8441639B2 (en) * | 2009-09-03 | 2013-05-14 | Kla-Tencor Corp. | Metrology systems and methods |
US8896832B2 (en) * | 2010-06-17 | 2014-11-25 | Kla-Tencor Corp. | Discrete polarization scatterometry |
NL2006935A (en) | 2010-06-28 | 2011-12-29 | Asml Netherlands Bv | Inspection apparatus and method. |
US8954184B2 (en) * | 2011-01-19 | 2015-02-10 | Tokyo Electron Limited | Tool performance by linking spectroscopic information with tool operational parameters and material measurement information |
WO2012109348A1 (en) | 2011-02-10 | 2012-08-16 | Kla-Tencor Corporation | Structured illumination for contrast enhancement in overlay metrology |
US9702983B2 (en) * | 2011-05-03 | 2017-07-11 | Applied Materials Israel, Ltd. | Multi-spot collection optics |
US8456639B2 (en) * | 2011-07-01 | 2013-06-04 | Kla-Tencor Corporation | Measurement of critical dimension |
US9234843B2 (en) | 2011-08-25 | 2016-01-12 | Alliance For Sustainable Energy, Llc | On-line, continuous monitoring in solar cell and fuel cell manufacturing using spectral reflectance imaging |
US9400246B2 (en) | 2011-10-11 | 2016-07-26 | Kla-Tencor Corporation | Optical metrology tool equipped with modulated illumination sources |
US9228943B2 (en) * | 2011-10-27 | 2016-01-05 | Kla-Tencor Corporation | Dynamically adjustable semiconductor metrology system |
US10088413B2 (en) * | 2011-11-21 | 2018-10-02 | Kla-Tencor Corporation | Spectral matching based calibration |
US8982358B2 (en) | 2012-01-17 | 2015-03-17 | Kla-Tencor Corporation | Apparatus and method of measuring roughness and other parameters of a structure |
US9176069B2 (en) | 2012-02-10 | 2015-11-03 | Kla-Tencor Corporation | System and method for apodization in a semiconductor device inspection system |
JP6033890B2 (ja) | 2012-02-21 | 2016-11-30 | エーエスエムエル ネザーランズ ビー.ブイ. | 検査装置及び方法 |
US9091650B2 (en) * | 2012-11-27 | 2015-07-28 | Kla-Tencor Corporation | Apodization for pupil imaging scatterometry |
US9116103B2 (en) | 2013-01-14 | 2015-08-25 | Kla-Tencor Corporation | Multiple angles of incidence semiconductor metrology systems and methods |
US9123649B1 (en) | 2013-01-21 | 2015-09-01 | Kla-Tencor Corporation | Fit-to-pitch overlay measurement targets |
US9512985B2 (en) | 2013-02-22 | 2016-12-06 | Kla-Tencor Corporation | Systems for providing illumination in optical metrology |
WO2014194095A1 (en) | 2013-05-30 | 2014-12-04 | Kla-Tencor Corporation | Combined imaging and scatterometry metrology |
WO2015006233A1 (en) * | 2013-07-09 | 2015-01-15 | Kla-Tencor Corporation | Aperture alignment in scatterometry metrology systems |
US9189705B2 (en) | 2013-08-08 | 2015-11-17 | JSMSW Technology LLC | Phase-controlled model-based overlay measurement systems and methods |
US9784690B2 (en) * | 2014-05-12 | 2017-10-10 | Kla-Tencor Corporation | Apparatus, techniques, and target designs for measuring semiconductor parameters |
KR102214370B1 (ko) * | 2014-06-24 | 2021-02-09 | 케이엘에이 코포레이션 | 조리개 및 타겟의 회전된 경계선 |
US9739719B2 (en) | 2014-10-31 | 2017-08-22 | Kla-Tencor Corporation | Measurement systems having linked field and pupil signal detection |
US10072921B2 (en) | 2014-12-05 | 2018-09-11 | Kla-Tencor Corporation | Methods and systems for spectroscopic beam profile metrology having a first two dimensional detector to detect collected light transmitted by a first wavelength dispersive element |
US10132684B1 (en) | 2014-12-18 | 2018-11-20 | J.A. Woolam Co., Inc. | Reflectometer, spectrophometer, ellipsometer and polarimeter system with a super continuum laser-source of a beam of electromagnetism and improved detector system |
US11675208B1 (en) | 2014-12-18 | 2023-06-13 | J.A. Woollam Co., Inc. | Reflectometer, spectrophotometer, ellipsometer and polarimeter system with a super continuum laser source of a beam of electromagnetism, and improved detector system |
US10422739B1 (en) | 2014-12-18 | 2019-09-24 | J.A. Woollam Co., Inc. | Reflectometer, spectrophotometer, ellipsometer and polarimeter systems with a super continuum laser source of a beam of electromagnetism, and improved detector system |
US11035729B1 (en) | 2014-12-18 | 2021-06-15 | J.A. Woqllam Co., Inc. | Reflectometer, spectrophotometer, ellipsometer and polarimeter system with a super continuum laser source of a beam of electromagnetism, and improved detector system |
US9915524B2 (en) * | 2015-05-11 | 2018-03-13 | Kla-Tencor Corporation | Optical metrology with small illumination spot size |
US10754260B2 (en) | 2015-06-18 | 2020-08-25 | Kla-Tencor Corporation | Method and system for process control with flexible sampling |
US10184903B2 (en) | 2015-09-11 | 2019-01-22 | Samsung Display Co., Ltd. | Device for evaluating crystallinity and method of evaluating crystallinity |
US10101676B2 (en) * | 2015-09-23 | 2018-10-16 | KLA—Tencor Corporation | Spectroscopic beam profile overlay metrology |
CN108369384A (zh) | 2015-12-09 | 2018-08-03 | Asml控股股份有限公司 | 具有灵活性的照射器 |
US9921152B2 (en) * | 2016-01-15 | 2018-03-20 | Kla-Tencor Corporation | Systems and methods for extended infrared spectroscopic ellipsometry |
US10139528B1 (en) * | 2016-01-20 | 2018-11-27 | Kla-Tencor Corporation | Compound objectives for imaging and scatterometry overlay |
WO2017153130A1 (en) | 2016-03-07 | 2017-09-14 | Asml Netherlands B.V. | Illumination system and metrology system |
US10754259B2 (en) | 2016-06-30 | 2020-08-25 | Asml Holding N.V. | Method and device for pupil illumination in overlay and critical dimension sensors |
US10048132B2 (en) * | 2016-07-28 | 2018-08-14 | Kla-Tencor Corporation | Simultaneous capturing of overlay signals from multiple targets |
US10438825B2 (en) | 2016-08-29 | 2019-10-08 | Kla-Tencor Corporation | Spectral reflectometry for in-situ process monitoring and control |
WO2018071716A1 (en) | 2016-10-13 | 2018-04-19 | Kla-Tencor Corporation | Metrology systems and methods for process control |
US10480935B2 (en) | 2016-12-02 | 2019-11-19 | Alliance For Sustainable Energy, Llc | Thickness mapping using multispectral imaging |
US10365211B2 (en) | 2017-09-26 | 2019-07-30 | Kla-Tencor Corporation | Systems and methods for metrology beam stabilization |
US11067389B2 (en) | 2018-03-13 | 2021-07-20 | Kla Corporation | Overlay metrology system and method |
JPWO2020031784A1 (ja) * | 2018-08-06 | 2021-09-24 | 富士フイルム株式会社 | 積層体、液晶表示装置、有機電界発光装置 |
WO2020106335A1 (en) * | 2018-11-21 | 2020-05-28 | Kla-Tencor Corporation | Single cell grey scatterometry overlay targets and their measurement using varying illumination parameter(s) |
US11480868B2 (en) * | 2019-03-22 | 2022-10-25 | International Business Machines Corporation | Determination of optical roughness in EUV structures |
US10921261B2 (en) | 2019-05-09 | 2021-02-16 | Kla Corporation | Strontium tetraborate as optical coating material |
US11162897B2 (en) | 2019-05-15 | 2021-11-02 | Onto Innovation Inc. | Optical metrology device using numerical aperture reduction |
US11011366B2 (en) | 2019-06-06 | 2021-05-18 | Kla Corporation | Broadband ultraviolet illumination sources |
US11255797B2 (en) | 2019-07-09 | 2022-02-22 | Kla Corporation | Strontium tetraborate as optical glass material |
US11933717B2 (en) | 2019-09-27 | 2024-03-19 | Kla Corporation | Sensitive optical metrology in scanning and static modes |
US11366307B2 (en) | 2020-08-27 | 2022-06-21 | Kla Corporation | Programmable and reconfigurable mask with MEMS micro-mirror array for defect detection |
KR102361925B1 (ko) * | 2020-09-29 | 2022-02-11 | 이승훈 | 광학장치 |
CN112729133B (zh) * | 2020-12-18 | 2023-02-24 | 广东省大湾区集成电路与系统应用研究院 | 一种基于探测光栅衍射强度测量薄膜厚度的方法及装置 |
US20230034635A1 (en) | 2021-07-30 | 2023-02-02 | Kla Corporation | Protective coating for nonlinear optical crystal |
WO2024023069A1 (en) | 2022-07-26 | 2024-02-01 | Trinamix Gmbh | Method for determining a characteristic value of an optical system |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01202603A (ja) * | 1988-02-09 | 1989-08-15 | Citizen Watch Co Ltd | レーザ光を用いた微小寸法計測装置 |
US6628381B1 (en) * | 2000-06-20 | 2003-09-30 | Applied Materials, Inc. | Optical inspection method and apparatus utilizing a collection angle design |
US6690473B1 (en) * | 1999-02-01 | 2004-02-10 | Sensys Instruments Corporation | Integrated surface metrology |
JP2005530144A (ja) * | 2002-06-18 | 2005-10-06 | ティンバー テクノロジーズ,インコーポレイティド | 単一構造の光学測定法 |
JP2006012867A (ja) * | 2004-06-21 | 2006-01-12 | Nikon Corp | マーク計測方法及び装置、露光方法及び装置、並びに露光システム |
JP2008083032A (ja) * | 2006-08-10 | 2008-04-10 | Asml Netherlands Bv | 検査方法および装置、リソグラフィ装置、リソグラフィ処理セルおよびデバイス製造方法 |
JP2008158100A (ja) * | 2006-12-21 | 2008-07-10 | Toshiba Corp | パターン管理方法及びパターン管理プログラム |
JP2011525039A (ja) * | 2008-05-12 | 2011-09-08 | エーエスエムエル ネザーランズ ビー.ブイ. | リソグラフィ用検査装置 |
Family Cites Families (62)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59100805A (ja) * | 1982-12-01 | 1984-06-11 | Canon Inc | 物体観察装置 |
US4710642A (en) * | 1985-08-20 | 1987-12-01 | Mcneil John R | Optical scatterometer having improved sensitivity and bandwidth |
US4999014A (en) * | 1989-05-04 | 1991-03-12 | Therma-Wave, Inc. | Method and apparatus for measuring thickness of thin films |
US5042951A (en) * | 1989-09-19 | 1991-08-27 | Therma-Wave, Inc. | High resolution ellipsometric apparatus |
US5241369A (en) * | 1990-10-01 | 1993-08-31 | Mcneil John R | Two-dimensional optical scatterometer apparatus and process |
US5164790A (en) * | 1991-02-27 | 1992-11-17 | Mcneil John R | Simple CD measurement of periodic structures on photomasks |
US5674652A (en) * | 1991-02-28 | 1997-10-07 | University Of New Mexico | Diffracted light from latent images in photoresist for exposure control |
US5159412A (en) * | 1991-03-15 | 1992-10-27 | Therma-Wave, Inc. | Optical measurement device with enhanced sensitivity |
US5309276A (en) * | 1991-08-29 | 1994-05-03 | Optical Research Associates | Catoptric optical system including concave and convex reflectors |
US5181080A (en) * | 1991-12-23 | 1993-01-19 | Therma-Wave, Inc. | Method and apparatus for evaluating the thickness of thin films |
US5830611A (en) * | 1992-03-05 | 1998-11-03 | Bishop; Kenneth P. | Use of diffracted light from latent images in photoresist for optimizing image contrast |
US5412473A (en) * | 1993-07-16 | 1995-05-02 | Therma-Wave, Inc. | Multiple angle spectroscopic analyzer utilizing interferometric and ellipsometric devices |
US5633747A (en) * | 1994-12-21 | 1997-05-27 | Tencor Instruments | Variable spot-size scanning apparatus |
US6512631B2 (en) * | 1996-07-22 | 2003-01-28 | Kla-Tencor Corporation | Broad-band deep ultraviolet/vacuum ultraviolet catadioptric imaging system |
US5703692A (en) * | 1995-08-03 | 1997-12-30 | Bio-Rad Laboratories, Inc. | Lens scatterometer system employing source light beam scanning means |
US5739909A (en) * | 1995-10-10 | 1998-04-14 | Lucent Technologies Inc. | Measurement and control of linewidths in periodic structures using spectroscopic ellipsometry |
US6104486A (en) * | 1995-12-28 | 2000-08-15 | Fujitsu Limited | Fabrication process of a semiconductor device using ellipsometry |
US5867276A (en) * | 1997-03-07 | 1999-02-02 | Bio-Rad Laboratories, Inc. | Method for broad wavelength scatterometry |
US5859424A (en) * | 1997-04-08 | 1999-01-12 | Kla-Tencor Corporation | Apodizing filter system useful for reducing spot size in optical measurements and other applications |
US5963329A (en) * | 1997-10-31 | 1999-10-05 | International Business Machines Corporation | Method and apparatus for measuring the profile of small repeating lines |
US6483580B1 (en) * | 1998-03-06 | 2002-11-19 | Kla-Tencor Technologies Corporation | Spectroscopic scatterometer system |
US5917594A (en) * | 1998-04-08 | 1999-06-29 | Kla-Tencor Corporation | Spectroscopic measurement system using an off-axis spherical mirror and refractive elements |
DE19925831A1 (de) | 1999-06-07 | 2000-12-14 | Inst Halbleiterphysik Gmbh | Verfahren zur Messung des Positionierungsfehlers von Strukturmustern |
US6429943B1 (en) * | 2000-03-29 | 2002-08-06 | Therma-Wave, Inc. | Critical dimension analysis with simultaneous multiple angle of incidence measurements |
WO2002015238A2 (en) * | 2000-08-11 | 2002-02-21 | Sensys Instruments Corporation | Device and method for optical inspection of semiconductor wafer |
US7317531B2 (en) * | 2002-12-05 | 2008-01-08 | Kla-Tencor Technologies Corporation | Apparatus and methods for detecting overlay errors using scatterometry |
US7541201B2 (en) * | 2000-08-30 | 2009-06-02 | Kla-Tencor Technologies Corporation | Apparatus and methods for determining overlay of structures having rotational or mirror symmetry |
US6891627B1 (en) * | 2000-09-20 | 2005-05-10 | Kla-Tencor Technologies Corp. | Methods and systems for determining a critical dimension and overlay of a specimen |
US7196782B2 (en) * | 2000-09-20 | 2007-03-27 | Kla-Tencor Technologies Corp. | Methods and systems for determining a thin film characteristic and an electrical property of a specimen |
US7099005B1 (en) * | 2000-09-27 | 2006-08-29 | Kla-Tencor Technologies Corporation | System for scatterometric measurements and applications |
US6721052B2 (en) * | 2000-12-20 | 2004-04-13 | Kla-Technologies Corporation | Systems for measuring periodic structures |
US6819426B2 (en) * | 2001-02-12 | 2004-11-16 | Therma-Wave, Inc. | Overlay alignment metrology using diffraction gratings |
US6704661B1 (en) * | 2001-07-16 | 2004-03-09 | Therma-Wave, Inc. | Real time analysis of periodic structures on semiconductors |
FR2827680B1 (fr) * | 2001-07-20 | 2003-10-10 | Immervision Internat Pte Ltd | Procede de capture d'une image panoramique au moyen d'un capteur d'image de forme rectangulaire |
US6678046B2 (en) * | 2001-08-28 | 2004-01-13 | Therma-Wave, Inc. | Detector configurations for optical metrology |
US7619735B2 (en) * | 2002-01-15 | 2009-11-17 | Applied Materials, Israel, Ltd. | Optical inspection using variable apodization |
US6813034B2 (en) * | 2002-02-05 | 2004-11-02 | Therma-Wave, Inc. | Analysis of isolated and aperiodic structures with simultaneous multiple angle of incidence measurements |
IL148566A (en) * | 2002-03-07 | 2007-06-17 | Nova Measuring Instr Ltd | Method and system for measuring overlap accuracy |
GB0216815D0 (en) | 2002-07-19 | 2002-08-28 | Aoti Operating Co Inc | Detection method and apparatus |
US7139081B2 (en) * | 2002-09-09 | 2006-11-21 | Zygo Corporation | Interferometry method for ellipsometry, reflectometry, and scatterometry measurements, including characterization of thin film structures |
US7095504B1 (en) * | 2003-02-25 | 2006-08-22 | Lockheed Martin Corporation | Apodization of beams in an optical interferometer |
US7145654B2 (en) * | 2003-10-01 | 2006-12-05 | Tokyo Electron Limited | Method and apparatus to reduce spotsize in an optical metrology instrument |
EP1771754A1 (en) * | 2004-07-16 | 2007-04-11 | Koninklijke Philips Electronics N.V. | Method and apparatus for generating radially and/or azimuthally polarized light beams. |
US7791727B2 (en) | 2004-08-16 | 2010-09-07 | Asml Netherlands B.V. | Method and apparatus for angular-resolved spectroscopic lithography characterization |
US7515253B2 (en) * | 2005-01-12 | 2009-04-07 | Kla-Tencor Technologies Corporation | System for measuring a sample with a layer containing a periodic diffracting structure |
US20070002336A1 (en) * | 2005-06-30 | 2007-01-04 | Asml Netherlands B.V. | Metrology apparatus, lithographic apparatus, process apparatus, metrology method and device manufacturing method |
US7616313B2 (en) * | 2006-03-31 | 2009-11-10 | Kla-Tencor Technologies Corporation | Apparatus and methods for detecting overlay errors using scatterometry |
US7528941B2 (en) * | 2006-06-01 | 2009-05-05 | Kla-Tencor Technolgies Corporation | Order selected overlay metrology |
CN101542618A (zh) * | 2006-09-25 | 2009-09-23 | 新加坡科技研究局 | 光学聚焦系统和方法 |
US20080129986A1 (en) * | 2006-11-30 | 2008-06-05 | Phillip Walsh | Method and apparatus for optically measuring periodic structures using orthogonal azimuthal sample orientations |
US7656518B2 (en) | 2007-03-30 | 2010-02-02 | Asml Netherlands B.V. | Method of measuring asymmetry in a scatterometer, a method of measuring an overlay error in a substrate and a metrology apparatus |
US7920676B2 (en) * | 2007-05-04 | 2011-04-05 | Xradia, Inc. | CD-GISAXS system and method |
US7746459B2 (en) * | 2007-08-10 | 2010-06-29 | Kla-Tencor Technologies Corp. | Systems configured to inspect a wafer |
US8040511B1 (en) * | 2008-01-29 | 2011-10-18 | Kla-Tencor Corporation | Azimuth angle measurement |
WO2011011511A1 (en) * | 2009-07-22 | 2011-01-27 | Kla-Tencor Corporation | Angle-resolved antisymmetric scatterometry |
US8441639B2 (en) * | 2009-09-03 | 2013-05-14 | Kla-Tencor Corp. | Metrology systems and methods |
US8896832B2 (en) * | 2010-06-17 | 2014-11-25 | Kla-Tencor Corp. | Discrete polarization scatterometry |
US9228943B2 (en) * | 2011-10-27 | 2016-01-05 | Kla-Tencor Corporation | Dynamically adjustable semiconductor metrology system |
US8982358B2 (en) * | 2012-01-17 | 2015-03-17 | Kla-Tencor Corporation | Apparatus and method of measuring roughness and other parameters of a structure |
US9176069B2 (en) * | 2012-02-10 | 2015-11-03 | Kla-Tencor Corporation | System and method for apodization in a semiconductor device inspection system |
WO2013181156A1 (en) * | 2012-05-29 | 2013-12-05 | Kla-Tencor Corporation | Small spot size spectroscopic ellipsometer |
US9091650B2 (en) * | 2012-11-27 | 2015-07-28 | Kla-Tencor Corporation | Apodization for pupil imaging scatterometry |
-
2010
- 2010-08-31 US US12/872,988 patent/US8441639B2/en active Active
- 2010-09-01 EP EP10814430.4A patent/EP2474027B1/en active Active
- 2010-09-01 SG SG2012010575A patent/SG178432A1/en unknown
- 2010-09-01 CN CN201080039744.4A patent/CN102668052B/zh active Active
- 2010-09-01 CN CN201510350555.3A patent/CN105021632B/zh active Active
- 2010-09-01 JP JP2012528011A patent/JP5801307B2/ja active Active
- 2010-09-01 WO PCT/US2010/047539 patent/WO2011028807A2/en active Application Filing
- 2010-09-01 KR KR1020127008652A patent/KR101800471B1/ko active IP Right Grant
- 2010-09-01 CN CN201410437602.3A patent/CN104155313B/zh active Active
-
2012
- 2012-02-16 IL IL218180A patent/IL218180A0/en unknown
-
2013
- 2013-04-17 US US13/865,104 patent/US8873054B2/en active Active
-
2014
- 2014-10-16 US US14/516,540 patent/US9080971B2/en active Active
-
2015
- 2015-06-02 JP JP2015111802A patent/JP6363557B2/ja active Active
-
2017
- 2017-07-13 JP JP2017136680A patent/JP6377218B2/ja active Active
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01202603A (ja) * | 1988-02-09 | 1989-08-15 | Citizen Watch Co Ltd | レーザ光を用いた微小寸法計測装置 |
US6690473B1 (en) * | 1999-02-01 | 2004-02-10 | Sensys Instruments Corporation | Integrated surface metrology |
US6628381B1 (en) * | 2000-06-20 | 2003-09-30 | Applied Materials, Inc. | Optical inspection method and apparatus utilizing a collection angle design |
JP2005530144A (ja) * | 2002-06-18 | 2005-10-06 | ティンバー テクノロジーズ,インコーポレイティド | 単一構造の光学測定法 |
JP2006012867A (ja) * | 2004-06-21 | 2006-01-12 | Nikon Corp | マーク計測方法及び装置、露光方法及び装置、並びに露光システム |
JP2008083032A (ja) * | 2006-08-10 | 2008-04-10 | Asml Netherlands Bv | 検査方法および装置、リソグラフィ装置、リソグラフィ処理セルおよびデバイス製造方法 |
JP2008158100A (ja) * | 2006-12-21 | 2008-07-10 | Toshiba Corp | パターン管理方法及びパターン管理プログラム |
JP2011525039A (ja) * | 2008-05-12 | 2011-09-08 | エーエスエムエル ネザーランズ ビー.ブイ. | リソグラフィ用検査装置 |
Cited By (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013080921A (ja) * | 2011-10-03 | 2013-05-02 | Asml Holding Nv | 検査装置、リソグラフィ装置、およびデバイス製造方法 |
JP2018179998A (ja) * | 2012-06-26 | 2018-11-15 | ケーエルエー−テンカー コーポレイション | 角度分解反射率測定における走査および回折の光計測からのアルゴリズム的除去 |
KR102216201B1 (ko) | 2013-09-16 | 2021-02-15 | 케이엘에이 코포레이션 | 반도체 샘플의 계측을 수행하기 위한 타원편광 측정기 장치 |
JP2016536609A (ja) * | 2013-09-16 | 2016-11-24 | ケーエルエー−テンカー コーポレイション | 多入射角半導体計測システム及び方法 |
KR20200085938A (ko) * | 2013-09-16 | 2020-07-15 | 케이엘에이 코포레이션 | 반도체 샘플의 계측을 수행하기 위한 타원편광 측정기 장치 |
KR102134943B1 (ko) * | 2013-09-16 | 2020-08-26 | 케이엘에이 코포레이션 | 반도체 샘플의 계측을 수행하기 위한 타원편광 측정기 장치 |
KR20160055908A (ko) * | 2013-09-16 | 2016-05-18 | 케이엘에이-텐코 코포레이션 | 다수의 입사각 반도체 계측 시스템 및 방법 |
JP2019502928A (ja) * | 2016-01-22 | 2019-01-31 | ケーエルエー−テンカー コーポレイション | 改善されたスポットサイズ能力を有する単波長エリプソメトリー |
JP2021056247A (ja) * | 2016-01-22 | 2021-04-08 | ケーエルエー コーポレイション | 単波長エリプソメトリー計測方法 |
JP7126009B2 (ja) | 2016-01-22 | 2022-08-25 | ケーエルエー コーポレイション | 単波長エリプソメトリー計測方法 |
CN110546749A (zh) * | 2017-03-29 | 2019-12-06 | 东京毅力科创株式会社 | 用于蚀刻处理监测的高级光学传感器、系统和方法 |
JP2020517093A (ja) * | 2017-03-29 | 2020-06-11 | 東京エレクトロン株式会社 | エッチング処理監視のための高度先進光センサー、システム及び方法 |
US11961721B2 (en) | 2018-07-31 | 2024-04-16 | Tokyo Electron Limited | Normal-incidence in-situ process monitor sensor |
JP7431824B2 (ja) | 2018-11-21 | 2024-02-15 | ケーエルエー コーポレイション | スキャトロメトリオーバーレイ(scol)測定方法及びscol測定システム |
Also Published As
Publication number | Publication date |
---|---|
US9080971B2 (en) | 2015-07-14 |
US8441639B2 (en) | 2013-05-14 |
WO2011028807A3 (en) | 2011-06-16 |
EP2474027A2 (en) | 2012-07-11 |
US20130229661A1 (en) | 2013-09-05 |
CN102668052B (zh) | 2015-07-22 |
JP5801307B2 (ja) | 2015-10-28 |
KR20120073270A (ko) | 2012-07-04 |
SG178432A1 (en) | 2012-04-27 |
JP6377218B2 (ja) | 2018-08-22 |
EP2474027B1 (en) | 2020-01-15 |
CN105021632B (zh) | 2017-12-15 |
CN104155313B (zh) | 2017-05-10 |
CN105021632A (zh) | 2015-11-04 |
IL218180A0 (en) | 2012-06-28 |
US8873054B2 (en) | 2014-10-28 |
CN102668052A (zh) | 2012-09-12 |
EP2474027A4 (en) | 2013-03-20 |
CN104155313A (zh) | 2014-11-19 |
JP2017207506A (ja) | 2017-11-24 |
JP2015200661A (ja) | 2015-11-12 |
US20150036142A1 (en) | 2015-02-05 |
WO2011028807A2 (en) | 2011-03-10 |
KR101800471B1 (ko) | 2017-11-22 |
JP6363557B2 (ja) | 2018-07-25 |
US20110069312A1 (en) | 2011-03-24 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6377218B2 (ja) | 計測システムおよび計測方法 | |
US10495446B2 (en) | Methods and apparatus for measuring height on a semiconductor wafer | |
KR101982363B1 (ko) | 조명 제어 | |
JP6033890B2 (ja) | 検査装置及び方法 | |
TW201643414A (zh) | 具有小照明光斑尺寸之光學計量 | |
KR20180019243A (ko) | 레이저 암시야 시스템에서 반점을 억제하는 방법 및 장치 | |
US11131629B2 (en) | Apparatus and methods for measuring phase and amplitude of light through a layer | |
US20190384184A1 (en) | Metrology Apparatus | |
WO2020191379A1 (en) | Magneto-optic kerr effect metrology systems | |
US10698226B2 (en) | Flexible illuminator | |
JP2023512258A (ja) | 接合されたウェハのオーバレイ計測 | |
US11512948B2 (en) | Imaging system for buried metrology targets | |
JP5038963B2 (ja) | 分光光学系および分光測定装置 | |
Quintanilha et al. | Sub-50-nm measurements using a 193-nm angle-resolved scatterfield microscope |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20130730 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20140131 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20140204 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20140501 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20140512 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20140804 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20150203 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20150602 |
|
A911 | Transfer to examiner for re-examination before appeal (zenchi) |
Free format text: JAPANESE INTERMEDIATE CODE: A911 Effective date: 20150609 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20150804 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20150826 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5801307 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |