IL239666B - Ellipsometer apparatus for performing metrology of a semiconductor sample - Google Patents

Ellipsometer apparatus for performing metrology of a semiconductor sample

Info

Publication number
IL239666B
IL239666B IL239666A IL23966615A IL239666B IL 239666 B IL239666 B IL 239666B IL 239666 A IL239666 A IL 239666A IL 23966615 A IL23966615 A IL 23966615A IL 239666 B IL239666 B IL 239666B
Authority
IL
Israel
Prior art keywords
ellipsometer
semiconductor sample
perform metrology
metrology
perform
Prior art date
Application number
IL239666A
Other languages
English (en)
Hebrew (he)
Other versions
IL239666A0 (en
Original Assignee
Kla Tencor Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US14/043,783 external-priority patent/US9116103B2/en
Application filed by Kla Tencor Corp filed Critical Kla Tencor Corp
Publication of IL239666A0 publication Critical patent/IL239666A0/en
Publication of IL239666B publication Critical patent/IL239666B/en

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/21—Polarisation-affecting properties
    • G01N21/211—Ellipsometry
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
    • G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
    • G01B11/0616—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating
    • G01B11/0641—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating with measurement of polarization
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/8806—Specially adapted optical and illumination features
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501—Semiconductor wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
    • H10P14/6536—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to radiation, e.g. visible light
    • H10P14/6538—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to radiation, e.g. visible light by exposure to UV light
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P34/00—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices
    • H10P34/40—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation
    • H10P34/42—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation with electromagnetic radiation, e.g. laser annealing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/27—Structural arrangements therefor

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Spectrometry And Color Measurement (AREA)
  • Investigating, Analyzing Materials By Fluorescence Or Luminescence (AREA)
IL239666A 2013-09-16 2015-06-28 Ellipsometer apparatus for performing metrology of a semiconductor sample IL239666B (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201361878561P 2013-09-16 2013-09-16
US14/043,783 US9116103B2 (en) 2013-01-14 2013-10-01 Multiple angles of incidence semiconductor metrology systems and methods
PCT/US2014/055666 WO2015039031A1 (en) 2013-09-16 2014-09-15 Multiple angles of incidence semiconductor metrology systems and methods

Publications (2)

Publication Number Publication Date
IL239666A0 IL239666A0 (en) 2015-08-31
IL239666B true IL239666B (en) 2021-02-28

Family

ID=52666379

Family Applications (2)

Application Number Title Priority Date Filing Date
IL239666A IL239666B (en) 2013-09-16 2015-06-28 Ellipsometer apparatus for performing metrology of a semiconductor sample
IL280388A IL280388B (en) 2013-09-16 2021-01-25 Ellipsometer apparatus for performing metrology of a semiconductor sample

Family Applications After (1)

Application Number Title Priority Date Filing Date
IL280388A IL280388B (en) 2013-09-16 2021-01-25 Ellipsometer apparatus for performing metrology of a semiconductor sample

Country Status (6)

Country Link
EP (3) EP3624174B1 (https=)
JP (6) JP6688732B2 (https=)
KR (2) KR102134943B1 (https=)
CN (1) CN105051877B (https=)
IL (2) IL239666B (https=)
WO (1) WO2015039031A1 (https=)

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US10215693B2 (en) * 2016-09-29 2019-02-26 Kla-Tencor Corporation Infrared spectroscopic reflectometer for measurement of high aspect ratio structures
EP3333632A1 (en) 2016-12-08 2018-06-13 ASML Netherlands B.V. Metrology apparatus
US10444161B2 (en) * 2017-04-05 2019-10-15 Kla-Tencor Corporation Systems and methods for metrology with layer-specific illumination spectra
CN109425619B (zh) * 2017-08-31 2021-12-28 深圳中科飞测科技股份有限公司 光学测量系统及方法
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CN112213272B (zh) * 2019-07-10 2024-01-12 中微半导体设备(上海)股份有限公司 一种光谱检测设备、终点检测系统和方法
CN110832631A (zh) * 2019-10-12 2020-02-21 长江存储科技有限责任公司 用于检测深度特征中的缺陷的方法
US11226234B2 (en) * 2020-01-22 2022-01-18 Applied Materials, Inc. Spectrum shaping devices and techniques for optical characterization applications
CN113048895B (zh) * 2021-03-04 2022-08-16 上海精测半导体技术有限公司 探测反射光变化的装置、方法及膜厚测量装置
CN113048894B (zh) * 2021-03-04 2022-10-18 上海精测半导体技术有限公司 一种探测反射光变化的装置、方法及膜厚测量装置
CN114428081A (zh) * 2021-12-15 2022-05-03 赣州市同兴达电子科技有限公司 复测aoi抛料可视化复判方法
KR102521324B1 (ko) * 2022-03-03 2023-04-20 (주)오로스 테크놀로지 입사각을 갖는 오프-액시스 광학계의 정렬 방법
KR102492803B1 (ko) 2022-04-19 2023-01-31 (주)오로스테크놀로지 조리개를 이용하여 입사 각도 또는 개구수를 조절하는 편광 분석 장치 및 방법
CN117980620A (zh) 2022-05-13 2024-05-03 日本精工株式会社 反向输入切断离合器
CN115290571A (zh) * 2022-08-16 2022-11-04 深圳市埃芯半导体科技有限公司 测量设备和测量方法
CN115389022B (zh) * 2022-08-19 2024-01-26 深圳市埃芯半导体科技有限公司 椭偏仪
KR102621281B1 (ko) * 2022-11-22 2024-01-05 (주)오로스테크놀로지 광 계측기
CN116518851A (zh) * 2023-03-31 2023-08-01 江苏匠岭半导体有限公司 光学测量组件、半导体光学膜厚和线宽测量装置与方法
US20250076185A1 (en) * 2023-08-31 2025-03-06 Kla Corporation Angle Of Incidence And Azimuth Angle Resolved Spectroscopic Ellipsometry For Semiconductor Metrology

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Also Published As

Publication number Publication date
IL280388A (en) 2021-03-01
KR20200085938A (ko) 2020-07-15
EP3047520A1 (en) 2016-07-27
EP3624174B1 (en) 2024-08-21
WO2015039031A1 (en) 2015-03-19
JP6688732B2 (ja) 2020-04-28
EP3624174A2 (en) 2020-03-18
KR20160055908A (ko) 2016-05-18
CN105051877B (zh) 2019-02-22
JP2022079538A (ja) 2022-05-26
EP3971950B1 (en) 2024-11-06
EP3047520A4 (en) 2017-07-12
IL280388B (en) 2022-02-01
EP3047520B1 (en) 2019-11-06
CN105051877A (zh) 2015-11-11
EP3971950A1 (en) 2022-03-23
KR102134943B1 (ko) 2020-08-26
KR102216201B1 (ko) 2021-02-15
JP2025081595A (ja) 2025-05-27
JP2023014136A (ja) 2023-01-26
JP2016536609A (ja) 2016-11-24
IL239666A0 (en) 2015-08-31
EP3624174A3 (en) 2020-06-03
JP2025026544A (ja) 2025-02-21
JP2020128986A (ja) 2020-08-27

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