JP6688732B2 - 多入射角半導体計測システム及び方法 - Google Patents

多入射角半導体計測システム及び方法 Download PDF

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Publication number
JP6688732B2
JP6688732B2 JP2016542854A JP2016542854A JP6688732B2 JP 6688732 B2 JP6688732 B2 JP 6688732B2 JP 2016542854 A JP2016542854 A JP 2016542854A JP 2016542854 A JP2016542854 A JP 2016542854A JP 6688732 B2 JP6688732 B2 JP 6688732B2
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Prior art keywords
irradiation
azimuth
illumination
collection
incidence
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Japanese (ja)
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JP2016536609A5 (https=
JP2016536609A (ja
Inventor
デイヴィッド ワイ ワン
デイヴィッド ワイ ワン
クラウス フロック
クラウス フロック
ローレンス ディー ロッター
ローレンス ディー ロッター
シャンカー クリシュナン
シャンカー クリシュナン
ヨハネス ディー デフェール
ヨハネス ディー デフェール
キャタリン フィリップ
キャタリン フィリップ
グレゴリー ブラディ
グレゴリー ブラディ
ムザミル アライン
ムザミル アライン
アンドレイ シェグロフ
アンドレイ シェグロフ
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KLA Corp
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KLA Corp
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Priority claimed from US14/043,783 external-priority patent/US9116103B2/en
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/21—Polarisation-affecting properties
    • G01N21/211—Ellipsometry
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
    • G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
    • G01B11/0616—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating
    • G01B11/0641—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating with measurement of polarization
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/8806—Specially adapted optical and illumination features
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501—Semiconductor wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
    • H10P14/6536—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to radiation, e.g. visible light
    • H10P14/6538—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to radiation, e.g. visible light by exposure to UV light
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P34/00—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices
    • H10P34/40—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation
    • H10P34/42—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation with electromagnetic radiation, e.g. laser annealing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/27—Structural arrangements therefor

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Spectrometry And Color Measurement (AREA)
  • Investigating, Analyzing Materials By Fluorescence Or Luminescence (AREA)
JP2016542854A 2013-09-16 2014-09-15 多入射角半導体計測システム及び方法 Active JP6688732B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201361878561P 2013-09-16 2013-09-16
US61/878,561 2013-09-16
US14/043,783 2013-10-01
US14/043,783 US9116103B2 (en) 2013-01-14 2013-10-01 Multiple angles of incidence semiconductor metrology systems and methods
PCT/US2014/055666 WO2015039031A1 (en) 2013-09-16 2014-09-15 Multiple angles of incidence semiconductor metrology systems and methods

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2020068405A Division JP2020128986A (ja) 2013-09-16 2020-04-06 多入射角半導体計測システム及び方法

Publications (3)

Publication Number Publication Date
JP2016536609A JP2016536609A (ja) 2016-11-24
JP2016536609A5 JP2016536609A5 (https=) 2017-10-26
JP6688732B2 true JP6688732B2 (ja) 2020-04-28

Family

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JP2016542854A Active JP6688732B2 (ja) 2013-09-16 2014-09-15 多入射角半導体計測システム及び方法
JP2020068405A Pending JP2020128986A (ja) 2013-09-16 2020-04-06 多入射角半導体計測システム及び方法
JP2022043887A Pending JP2022079538A (ja) 2013-09-16 2022-03-18 多入射角半導体計測システム及び方法
JP2022183419A Pending JP2023014136A (ja) 2013-09-16 2022-11-16 多入射角半導体計測システム及び方法
JP2024212169A Pending JP2025026544A (ja) 2013-09-16 2024-12-05 多入射角半導体計測システム及び方法
JP2025027104A Pending JP2025081595A (ja) 2013-09-16 2025-02-21 多入射角半導体計測システム及び方法

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JP2020068405A Pending JP2020128986A (ja) 2013-09-16 2020-04-06 多入射角半導体計測システム及び方法
JP2022043887A Pending JP2022079538A (ja) 2013-09-16 2022-03-18 多入射角半導体計測システム及び方法
JP2022183419A Pending JP2023014136A (ja) 2013-09-16 2022-11-16 多入射角半導体計測システム及び方法
JP2024212169A Pending JP2025026544A (ja) 2013-09-16 2024-12-05 多入射角半導体計測システム及び方法
JP2025027104A Pending JP2025081595A (ja) 2013-09-16 2025-02-21 多入射角半導体計測システム及び方法

Country Status (6)

Country Link
EP (3) EP3624174B1 (https=)
JP (6) JP6688732B2 (https=)
KR (2) KR102134943B1 (https=)
CN (1) CN105051877B (https=)
IL (2) IL239666B (https=)
WO (1) WO2015039031A1 (https=)

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Also Published As

Publication number Publication date
IL280388A (en) 2021-03-01
KR20200085938A (ko) 2020-07-15
EP3047520A1 (en) 2016-07-27
EP3624174B1 (en) 2024-08-21
WO2015039031A1 (en) 2015-03-19
EP3624174A2 (en) 2020-03-18
KR20160055908A (ko) 2016-05-18
CN105051877B (zh) 2019-02-22
JP2022079538A (ja) 2022-05-26
EP3971950B1 (en) 2024-11-06
EP3047520A4 (en) 2017-07-12
IL239666B (en) 2021-02-28
IL280388B (en) 2022-02-01
EP3047520B1 (en) 2019-11-06
CN105051877A (zh) 2015-11-11
EP3971950A1 (en) 2022-03-23
KR102134943B1 (ko) 2020-08-26
KR102216201B1 (ko) 2021-02-15
JP2025081595A (ja) 2025-05-27
JP2023014136A (ja) 2023-01-26
JP2016536609A (ja) 2016-11-24
IL239666A0 (en) 2015-08-31
EP3624174A3 (en) 2020-06-03
JP2025026544A (ja) 2025-02-21
JP2020128986A (ja) 2020-08-27

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