KR102098226B1 - 플라즈마 cvd법에 의하여 형성된 화학 증착막 - Google Patents

플라즈마 cvd법에 의하여 형성된 화학 증착막 Download PDF

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KR102098226B1
KR102098226B1 KR1020147024084A KR20147024084A KR102098226B1 KR 102098226 B1 KR102098226 B1 KR 102098226B1 KR 1020147024084 A KR1020147024084 A KR 1020147024084A KR 20147024084 A KR20147024084 A KR 20147024084A KR 102098226 B1 KR102098226 B1 KR 102098226B1
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chemical vapor
vapor deposition
deposition film
film
layer
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KR20140136437A (ko
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타카요시 후지모토
마사미치 야마시타
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도레 엔지니아린구 가부시키가이샤
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/401—Oxides containing silicon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/50—Encapsulations or containers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/87—Passivation; Containers; Encapsulations
    • H10K59/873—Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/40—Encapsulations, e.g. protective coatings characterised by their materials
    • H10W74/43—Encapsulations, e.g. protective coatings characterised by their materials comprising oxides, nitrides or carbides, e.g. ceramics or glasses

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electroluminescent Light Sources (AREA)
  • Laminated Bodies (AREA)
  • Ceramic Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
KR1020147024084A 2012-03-07 2013-01-16 플라즈마 cvd법에 의하여 형성된 화학 증착막 Active KR102098226B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JPJP-P-2012-050960 2012-03-07
JP2012050960A JP5967982B2 (ja) 2012-03-07 2012-03-07 プラズマｃｖｄ法により形成された化学蒸着膜
PCT/JP2013/050606 WO2013132889A1 (ja) 2012-03-07 2013-01-16 プラズマｃｖｄ法により形成された化学蒸着膜

Publications (2)

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KR20140136437A KR20140136437A (ko) 2014-11-28
KR102098226B1 true KR102098226B1 (ko) 2020-04-07

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US (1) US9281420B2 (https=)
JP (1) JP5967982B2 (https=)
KR (1) KR102098226B1 (https=)
CN (1) CN104136657B (https=)
WO (1) WO2013132889A1 (https=)

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JP6362330B2 (ja) * 2011-11-14 2018-07-25 コニカミノルタ株式会社 有機エレクトロルミネッセンス素子、及び、面状発光体
WO2015107702A1 (ja) * 2014-01-15 2015-07-23 コニカミノルタ株式会社 ガスバリア性フィルム
WO2015119086A1 (ja) * 2014-02-10 2015-08-13 シャープ株式会社 エレクトロルミネッセンス装置
CN104733647B (zh) * 2015-03-10 2016-08-24 京东方科技集团股份有限公司 薄膜封装方法及薄膜封装结构、显示装置
CN108075040A (zh) * 2016-11-07 2018-05-25 中国科学院苏州纳米技术与纳米仿生研究所 柔性oled基材及其制备方法
CN109608678A (zh) * 2018-11-07 2019-04-12 无锡泓瑞航天科技有限公司 一种三明治结构硅氧烷薄膜及其制备方法
TWI712119B (zh) * 2018-12-05 2020-12-01 位元奈米科技股份有限公司 凹槽封裝結構
IT202100002966A1 (it) * 2021-02-10 2022-08-10 Sambonet Paderno Ind S P A Copertura per prodotti argentati destinati ad entrare in contatto con alimenti
CN116426010A (zh) * 2021-12-31 2023-07-14 广东聚华印刷显示技术有限公司 一种复合薄膜及其制备方法、显示装置

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040227165A1 (en) 2003-04-21 2004-11-18 Nanodynamics, Inc. Si/C superlattice useful for semiconductor devices
US20050255619A1 (en) 2004-04-23 2005-11-17 Negro Luca D CMOS-compatible light emitting aperiodic photonic structures
JP2007221039A (ja) 2006-02-20 2007-08-30 National Institute For Materials Science 絶縁膜および絶縁膜材料
JP2010114452A (ja) 2004-09-28 2010-05-20 Air Products & Chemicals Inc 多孔質の低誘電率組成物並びにそれを作製及び使用するための方法
JP2010532708A (ja) * 2007-07-06 2010-10-14 シデル・パーティシペーションズ 少なくとも３つの層を含むプラズマ堆積遮蔽コーティング、そのような１つのコーティングを得るための方法、およびそのようなコーティングでコーティングされた容器

Family Cites Families (8)

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Publication number Priority date Publication date Assignee Title
JP2526766B2 (ja) 1992-06-15 1996-08-21 東洋製罐株式会社 ガス遮断性積層プラスチックス材
JP4432423B2 (ja) 2003-09-25 2010-03-17 東洋製罐株式会社 プラズマｃｖｄ法による化学蒸着膜
KR101052573B1 (ko) 2004-04-02 2011-07-29 씨제이제일제당 (주) 균일한 함량을 갖는 과립형 동물 사료 첨가제를 제조하는 방법 및 그에 의하여 제조되는 과립형 동물 사료 첨가제
SG121180A1 (en) * 2004-09-28 2006-04-26 Air Prod & Chem Porous low dielectric constant compositions and methods for making and using same
US7256426B2 (en) * 2005-01-19 2007-08-14 Sharp Laboratories Of America, Inc. Rare earth element-doped silicon/silicon dioxide lattice structure
JP4947766B2 (ja) 2006-03-30 2012-06-06 東レエンジニアリング株式会社 シリコン系薄膜の形成方法
CN101473064B (zh) * 2006-06-16 2012-08-29 东丽工程株式会社 硅系薄膜和硅系薄膜的形成方法
TWI455338B (zh) * 2010-02-12 2014-10-01 Univ Nat Chiao Tung 超晶格結構的太陽能電池

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040227165A1 (en) 2003-04-21 2004-11-18 Nanodynamics, Inc. Si/C superlattice useful for semiconductor devices
US20050255619A1 (en) 2004-04-23 2005-11-17 Negro Luca D CMOS-compatible light emitting aperiodic photonic structures
JP2010114452A (ja) 2004-09-28 2010-05-20 Air Products & Chemicals Inc 多孔質の低誘電率組成物並びにそれを作製及び使用するための方法
JP2007221039A (ja) 2006-02-20 2007-08-30 National Institute For Materials Science 絶縁膜および絶縁膜材料
JP2010532708A (ja) * 2007-07-06 2010-10-14 シデル・パーティシペーションズ 少なくとも３つの層を含むプラズマ堆積遮蔽コーティング、そのような１つのコーティングを得るための方法、およびそのようなコーティングでコーティングされた容器

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Publication number Publication date
JP5967982B2 (ja) 2016-08-10
US20150068600A1 (en) 2015-03-12
CN104136657A (zh) 2014-11-05
CN104136657B (zh) 2017-03-08
KR20140136437A (ko) 2014-11-28
US9281420B2 (en) 2016-03-08
WO2013132889A1 (ja) 2013-09-12
JP2013185206A (ja) 2013-09-19

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