JP2013185206A5 - - Google Patents
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- Publication number
- JP2013185206A5 JP2013185206A5 JP2012050960A JP2012050960A JP2013185206A5 JP 2013185206 A5 JP2013185206 A5 JP 2013185206A5 JP 2012050960 A JP2012050960 A JP 2012050960A JP 2012050960 A JP2012050960 A JP 2012050960A JP 2013185206 A5 JP2013185206 A5 JP 2013185206A5
- Authority
- JP
- Japan
- Prior art keywords
- vapor deposition
- chemical vapor
- deposition film
- film
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 239000010408 film Substances 0.000 claims description 160
- 239000007789 gas Substances 0.000 claims description 86
- 238000005229 chemical vapour deposition Methods 0.000 claims description 75
- 125000004430 oxygen atom Chemical group O* 0.000 claims description 43
- 239000000758 substrate Substances 0.000 claims description 41
- 239000000126 substance Substances 0.000 claims description 29
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 28
- 238000005268 plasma chemical vapour deposition Methods 0.000 claims description 24
- UQEAIHBTYFGYIE-UHFFFAOYSA-N hexamethyldisiloxane Chemical group C[Si](C)(C)O[Si](C)(C)C UQEAIHBTYFGYIE-UHFFFAOYSA-N 0.000 claims description 22
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 19
- 229910052710 silicon Inorganic materials 0.000 claims description 18
- 150000003961 organosilicon compounds Chemical class 0.000 claims description 15
- 239000010409 thin film Substances 0.000 claims description 15
- 229910052799 carbon Inorganic materials 0.000 claims description 11
- 125000004432 carbon atom Chemical group C* 0.000 claims description 9
- 238000004519 manufacturing process Methods 0.000 claims description 8
- 150000001875 compounds Chemical class 0.000 claims description 7
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 158
- 230000004888 barrier function Effects 0.000 description 75
- 239000000463 material Substances 0.000 description 23
- FFUAGWLWBBFQJT-UHFFFAOYSA-N hexamethyldisilazane Chemical compound C[Si](C)(C)N[Si](C)(C)C FFUAGWLWBBFQJT-UHFFFAOYSA-N 0.000 description 22
- 229910052760 oxygen Inorganic materials 0.000 description 17
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 16
- 239000001301 oxygen Substances 0.000 description 15
- 238000000034 method Methods 0.000 description 14
- 238000010248 power generation Methods 0.000 description 14
- 230000015572 biosynthetic process Effects 0.000 description 10
- 239000011575 calcium Substances 0.000 description 10
- 239000000203 mixture Substances 0.000 description 10
- 239000002985 plastic film Substances 0.000 description 9
- 229920006255 plastic film Polymers 0.000 description 9
- 229910052751 metal Inorganic materials 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- 239000004033 plastic Substances 0.000 description 8
- 150000001721 carbon Chemical group 0.000 description 7
- 230000000052 comparative effect Effects 0.000 description 7
- 229910010272 inorganic material Inorganic materials 0.000 description 7
- 239000011147 inorganic material Substances 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- 238000012360 testing method Methods 0.000 description 7
- 238000001678 elastic recoil detection analysis Methods 0.000 description 6
- 150000002500 ions Chemical class 0.000 description 6
- 229920000139 polyethylene terephthalate Polymers 0.000 description 6
- 238000005001 rutherford backscattering spectroscopy Methods 0.000 description 6
- 238000007789 sealing Methods 0.000 description 6
- 229910052814 silicon oxide Inorganic materials 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 239000011368 organic material Substances 0.000 description 5
- 239000002994 raw material Substances 0.000 description 5
- 238000007740 vapor deposition Methods 0.000 description 5
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 4
- 230000006866 deterioration Effects 0.000 description 4
- 238000011156 evaluation Methods 0.000 description 4
- 239000001257 hydrogen Substances 0.000 description 4
- 229910052739 hydrogen Inorganic materials 0.000 description 4
- 125000004433 nitrogen atom Chemical group N* 0.000 description 4
- 239000005416 organic matter Substances 0.000 description 4
- 229920003223 poly(pyromellitimide-1,4-diphenyl ether) Polymers 0.000 description 4
- 238000006557 surface reaction Methods 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- 239000012790 adhesive layer Substances 0.000 description 3
- 238000004458 analytical method Methods 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 229920002799 BoPET Polymers 0.000 description 2
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 2
- 125000004429 atom Chemical group 0.000 description 2
- 229910052791 calcium Inorganic materials 0.000 description 2
- 230000003197 catalytic effect Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 2
- 150000007529 inorganic bases Chemical class 0.000 description 2
- 230000001678 irradiating effect Effects 0.000 description 2
- 125000000896 monocarboxylic acid group Chemical group 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 238000009832 plasma treatment Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 238000010998 test method Methods 0.000 description 2
- 229910003849 O-Si Inorganic materials 0.000 description 1
- 229910003872 O—Si Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- AXCZMVOFGPJBDE-UHFFFAOYSA-L calcium dihydroxide Chemical compound [OH-].[OH-].[Ca+2] AXCZMVOFGPJBDE-UHFFFAOYSA-L 0.000 description 1
- 229910001861 calcium hydroxide Inorganic materials 0.000 description 1
- 239000000920 calcium hydroxide Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 150000007530 organic bases Chemical class 0.000 description 1
- 239000012044 organic layer Substances 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 229920006254 polymer film Polymers 0.000 description 1
- 150000003377 silicon compounds Chemical class 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- -1 silicon oxide compound Chemical class 0.000 description 1
- 238000010301 surface-oxidation reaction Methods 0.000 description 1
- 239000013585 weight reducing agent Substances 0.000 description 1
Images
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012050960A JP5967982B2 (ja) | 2012-03-07 | 2012-03-07 | プラズマｃｖｄ法により形成された化学蒸着膜 |
| PCT/JP2013/050606 WO2013132889A1 (ja) | 2012-03-07 | 2013-01-16 | プラズマｃｖｄ法により形成された化学蒸着膜 |
| KR1020147024084A KR102098226B1 (ko) | 2012-03-07 | 2013-01-16 | 플라즈마 cvd법에 의하여 형성된 화학 증착막 |
| CN201380011749.XA CN104136657B (zh) | 2012-03-07 | 2013-01-16 | 通过等离子体cvd法形成的化学沉积膜 |
| US14/382,823 US9281420B2 (en) | 2012-03-07 | 2013-01-16 | Chemical vapor deposited film formed by plasma CVD method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012050960A JP5967982B2 (ja) | 2012-03-07 | 2012-03-07 | プラズマｃｖｄ法により形成された化学蒸着膜 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2013185206A JP2013185206A (ja) | 2013-09-19 |
| JP2013185206A5 true JP2013185206A5 (https=) | 2014-10-16 |
| JP5967982B2 JP5967982B2 (ja) | 2016-08-10 |
Family
ID=49116376
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2012050960A Active JP5967982B2 (ja) | 2012-03-07 | 2012-03-07 | プラズマｃｖｄ法により形成された化学蒸着膜 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US9281420B2 (https=) |
| JP (1) | JP5967982B2 (https=) |
| KR (1) | KR102098226B1 (https=) |
| CN (1) | CN104136657B (https=) |
| WO (1) | WO2013132889A1 (https=) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6362330B2 (ja) * | 2011-11-14 | 2018-07-25 | コニカミノルタ株式会社 | 有機エレクトロルミネッセンス素子、及び、面状発光体 |
| WO2015107702A1 (ja) * | 2014-01-15 | 2015-07-23 | コニカミノルタ株式会社 | ガスバリア性フィルム |
| WO2015119086A1 (ja) * | 2014-02-10 | 2015-08-13 | シャープ株式会社 | エレクトロルミネッセンス装置 |
| CN104733647B (zh) * | 2015-03-10 | 2016-08-24 | 京东方科技集团股份有限公司 | 薄膜封装方法及薄膜封装结构、显示装置 |
| CN108075040A (zh) * | 2016-11-07 | 2018-05-25 | 中国科学院苏州纳米技术与纳米仿生研究所 | 柔性oled基材及其制备方法 |
| CN109608678A (zh) * | 2018-11-07 | 2019-04-12 | 无锡泓瑞航天科技有限公司 | 一种三明治结构硅氧烷薄膜及其制备方法 |
| TWI712119B (zh) * | 2018-12-05 | 2020-12-01 | 位元奈米科技股份有限公司 | 凹槽封裝結構 |
| IT202100002966A1 (it) * | 2021-02-10 | 2022-08-10 | Sambonet Paderno Ind S P A | Copertura per prodotti argentati destinati ad entrare in contatto con alimenti |
| CN116426010A (zh) * | 2021-12-31 | 2023-07-14 | 广东聚华印刷显示技术有限公司 | 一种复合薄膜及其制备方法、显示装置 |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2526766B2 (ja) | 1992-06-15 | 1996-08-21 | 東洋製罐株式会社 | ガス遮断性積層プラスチックス材 |
| US7023010B2 (en) * | 2003-04-21 | 2006-04-04 | Nanodynamics, Inc. | Si/C superlattice useful for semiconductor devices |
| JP4432423B2 (ja) | 2003-09-25 | 2010-03-17 | 東洋製罐株式会社 | プラズマｃｖｄ法による化学蒸着膜 |
| KR101052573B1 (ko) | 2004-04-02 | 2011-07-29 | 씨제이제일제당 (주) | 균일한 함량을 갖는 과립형 동물 사료 첨가제를 제조하는 방법 및 그에 의하여 제조되는 과립형 동물 사료 첨가제 |
| US7407896B2 (en) | 2004-04-23 | 2008-08-05 | Massachusetts Institute Of Technology | CMOS-compatible light emitting aperiodic photonic structures |
| US7332445B2 (en) | 2004-09-28 | 2008-02-19 | Air Products And Chemicals, Inc. | Porous low dielectric constant compositions and methods for making and using same |
| SG121180A1 (en) * | 2004-09-28 | 2006-04-26 | Air Prod & Chem | Porous low dielectric constant compositions and methods for making and using same |
| US7256426B2 (en) * | 2005-01-19 | 2007-08-14 | Sharp Laboratories Of America, Inc. | Rare earth element-doped silicon/silicon dioxide lattice structure |
| JP2007221039A (ja) * | 2006-02-20 | 2007-08-30 | National Institute For Materials Science | 絶縁膜および絶縁膜材料 |
| JP4947766B2 (ja) | 2006-03-30 | 2012-06-06 | 東レエンジニアリング株式会社 | シリコン系薄膜の形成方法 |
| CN101473064B (zh) * | 2006-06-16 | 2012-08-29 | 东丽工程株式会社 | 硅系薄膜和硅系薄膜的形成方法 |
| FR2918301B1 (fr) | 2007-07-06 | 2011-06-24 | Sidel Participations | Revetement barriere depose par plasma comprenant au moins trois couches, procede d'obtention d'un tel revetement et recipient revetu d'un tel revetement |
| TWI455338B (zh) * | 2010-02-12 | 2014-10-01 | Univ Nat Chiao Tung | 超晶格結構的太陽能電池 |
-
2012
- 2012-03-07 JP JP2012050960A patent/JP5967982B2/ja active Active
-
2013
- 2013-01-16 CN CN201380011749.XA patent/CN104136657B/zh not_active Expired - Fee Related
- 2013-01-16 KR KR1020147024084A patent/KR102098226B1/ko active Active
- 2013-01-16 US US14/382,823 patent/US9281420B2/en active Active
- 2013-01-16 WO PCT/JP2013/050606 patent/WO2013132889A1/ja not_active Ceased
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