CN104136657B - 通过等离子体cvd法形成的化学沉积膜 - Google Patents

通过等离子体cvd法形成的化学沉积膜 Download PDF

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Publication number
CN104136657B
CN104136657B CN201380011749.XA CN201380011749A CN104136657B CN 104136657 B CN104136657 B CN 104136657B CN 201380011749 A CN201380011749 A CN 201380011749A CN 104136657 B CN104136657 B CN 104136657B
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China
Prior art keywords
film
deposited film
atoms
layer
chemically deposited
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Expired - Fee Related
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CN201380011749.XA
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English (en)
Chinese (zh)
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CN104136657A (zh
Inventor
藤元高佳
山下雅充
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Toray Engineering Co Ltd
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Toray Engineering Co Ltd
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Publication of CN104136657A publication Critical patent/CN104136657A/zh
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/401—Oxides containing silicon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/50—Encapsulations or containers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/87—Passivation; Containers; Encapsulations
    • H10K59/873—Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/40—Encapsulations, e.g. protective coatings characterised by their materials
    • H10W74/43—Encapsulations, e.g. protective coatings characterised by their materials comprising oxides, nitrides or carbides, e.g. ceramics or glasses

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electroluminescent Light Sources (AREA)
  • Laminated Bodies (AREA)
  • Ceramic Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
CN201380011749.XA 2012-03-07 2013-01-16 通过等离子体cvd法形成的化学沉积膜 Expired - Fee Related CN104136657B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JPJP2012-050960 2012-03-07
JP2012-050960 2012-03-07
JP2012050960A JP5967982B2 (ja) 2012-03-07 2012-03-07 プラズマｃｖｄ法により形成された化学蒸着膜
PCT/JP2013/050606 WO2013132889A1 (ja) 2012-03-07 2013-01-16 プラズマｃｖｄ法により形成された化学蒸着膜

Publications (2)

Publication Number Publication Date
CN104136657A CN104136657A (zh) 2014-11-05
CN104136657B true CN104136657B (zh) 2017-03-08

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN201380011749.XA Expired - Fee Related CN104136657B (zh) 2012-03-07 2013-01-16 通过等离子体cvd法形成的化学沉积膜

Country Status (5)

Country Link
US (1) US9281420B2 (https=)
JP (1) JP5967982B2 (https=)
KR (1) KR102098226B1 (https=)
CN (1) CN104136657B (https=)
WO (1) WO2013132889A1 (https=)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6362330B2 (ja) * 2011-11-14 2018-07-25 コニカミノルタ株式会社 有機エレクトロルミネッセンス素子、及び、面状発光体
WO2015107702A1 (ja) * 2014-01-15 2015-07-23 コニカミノルタ株式会社 ガスバリア性フィルム
WO2015119086A1 (ja) * 2014-02-10 2015-08-13 シャープ株式会社 エレクトロルミネッセンス装置
CN104733647B (zh) * 2015-03-10 2016-08-24 京东方科技集团股份有限公司 薄膜封装方法及薄膜封装结构、显示装置
CN108075040A (zh) * 2016-11-07 2018-05-25 中国科学院苏州纳米技术与纳米仿生研究所 柔性oled基材及其制备方法
CN109608678A (zh) * 2018-11-07 2019-04-12 无锡泓瑞航天科技有限公司 一种三明治结构硅氧烷薄膜及其制备方法
TWI712119B (zh) * 2018-12-05 2020-12-01 位元奈米科技股份有限公司 凹槽封裝結構
IT202100002966A1 (it) * 2021-02-10 2022-08-10 Sambonet Paderno Ind S P A Copertura per prodotti argentati destinati ad entrare in contatto con alimenti
CN116426010A (zh) * 2021-12-31 2023-07-14 广东聚华印刷显示技术有限公司 一种复合薄膜及其制备方法、显示装置

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1782124A (zh) * 2004-09-28 2006-06-07 气体产品与化学公司 多孔低介电常数组合物、其制备方法及其使用方法
JP2007221039A (ja) * 2006-02-20 2007-08-30 National Institute For Materials Science 絶縁膜および絶縁膜材料
CN101473064A (zh) * 2006-06-16 2009-07-01 东丽工程株式会社 硅系薄膜和硅系薄膜的形成方法
CN101878322A (zh) * 2007-07-06 2010-11-03 西德尔公司 包括至少三层的等离子体沉积的阻隔涂层,获得该涂层的方法及带有该涂层的容器

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2526766B2 (ja) 1992-06-15 1996-08-21 東洋製罐株式会社 ガス遮断性積層プラスチックス材
US7023010B2 (en) * 2003-04-21 2006-04-04 Nanodynamics, Inc. Si/C superlattice useful for semiconductor devices
JP4432423B2 (ja) 2003-09-25 2010-03-17 東洋製罐株式会社 プラズマｃｖｄ法による化学蒸着膜
KR101052573B1 (ko) 2004-04-02 2011-07-29 씨제이제일제당 (주) 균일한 함량을 갖는 과립형 동물 사료 첨가제를 제조하는 방법 및 그에 의하여 제조되는 과립형 동물 사료 첨가제
US7407896B2 (en) 2004-04-23 2008-08-05 Massachusetts Institute Of Technology CMOS-compatible light emitting aperiodic photonic structures
US7332445B2 (en) 2004-09-28 2008-02-19 Air Products And Chemicals, Inc. Porous low dielectric constant compositions and methods for making and using same
US7256426B2 (en) * 2005-01-19 2007-08-14 Sharp Laboratories Of America, Inc. Rare earth element-doped silicon/silicon dioxide lattice structure
JP4947766B2 (ja) 2006-03-30 2012-06-06 東レエンジニアリング株式会社 シリコン系薄膜の形成方法
TWI455338B (zh) * 2010-02-12 2014-10-01 Univ Nat Chiao Tung 超晶格結構的太陽能電池

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1782124A (zh) * 2004-09-28 2006-06-07 气体产品与化学公司 多孔低介电常数组合物、其制备方法及其使用方法
JP2007221039A (ja) * 2006-02-20 2007-08-30 National Institute For Materials Science 絶縁膜および絶縁膜材料
CN101473064A (zh) * 2006-06-16 2009-07-01 东丽工程株式会社 硅系薄膜和硅系薄膜的形成方法
CN101878322A (zh) * 2007-07-06 2010-11-03 西德尔公司 包括至少三层的等离子体沉积的阻隔涂层,获得该涂层的方法及带有该涂层的容器

Also Published As

Publication number Publication date
JP5967982B2 (ja) 2016-08-10
KR102098226B1 (ko) 2020-04-07
US20150068600A1 (en) 2015-03-12
CN104136657A (zh) 2014-11-05
KR20140136437A (ko) 2014-11-28
US9281420B2 (en) 2016-03-08
WO2013132889A1 (ja) 2013-09-12
JP2013185206A (ja) 2013-09-19

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Granted publication date: 20170308

Termination date: 20220116