KR102090343B1 - 촬상 패널 - Google Patents

촬상 패널 Download PDF

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Publication number
KR102090343B1
KR102090343B1 KR1020147015137A KR20147015137A KR102090343B1 KR 102090343 B1 KR102090343 B1 KR 102090343B1 KR 1020147015137 A KR1020147015137 A KR 1020147015137A KR 20147015137 A KR20147015137 A KR 20147015137A KR 102090343 B1 KR102090343 B1 KR 102090343B1
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South Korea
Prior art keywords
light
receiving
imaging panel
wiring layer
light receiving
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Expired - Fee Related
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KR1020147015137A
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English (en)
Korean (ko)
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KR20140113638A (ko
Inventor
히이즈 오오토리이
노리히사 시로타
하루오 도가시
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소니 세미컨덕터 솔루션즈 가부시키가이샤
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Publication of KR20140113638A publication Critical patent/KR20140113638A/ko
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/20—Measuring radiation intensity with scintillation detectors
    • G01T1/2006—Measuring radiation intensity with scintillation detectors using a combination of a scintillator and photodetector which measures the means radiation intensity
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/20—Measuring radiation intensity with scintillation detectors
    • G01T1/2018—Scintillation-photodiode combinations
    • G01T1/20185—Coupling means between the photodiode and the scintillator, e.g. optical couplings using adhesives with wavelength-shifting fibres
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/20—Measuring radiation intensity with scintillation detectors
    • G01T1/2018—Scintillation-photodiode combinations
    • G01T1/20188—Auxiliary details, e.g. casings or cooling
    • G01T1/2019—Shielding against direct hits
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/20—Measuring radiation intensity with scintillation detectors
    • G01T1/202—Measuring radiation intensity with scintillation detectors the detector being a crystal
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/20—Measuring radiation intensity with scintillation detectors
    • G01T1/202—Measuring radiation intensity with scintillation detectors the detector being a crystal
    • G01T1/2023—Selection of materials
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/24—Measuring radiation intensity with semiconductor detectors
    • G01T1/247—Detector read-out circuitry
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/189—X-ray, gamma-ray or corpuscular radiation imagers
    • H10F39/1898—Indirect radiation image sensors, e.g. using luminescent members
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto

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  • Spectroscopy & Molecular Physics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Molecular Biology (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Measurement Of Radiation (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
KR1020147015137A 2011-12-15 2012-12-07 촬상 패널 Expired - Fee Related KR102090343B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JPJP-P-2011-274780 2011-12-15
JP2011274780A JP5895504B2 (ja) 2011-12-15 2011-12-15 撮像パネルおよび撮像処理システム
PCT/JP2012/082436 WO2013089209A2 (en) 2011-12-15 2012-12-07 Image pickup panel and image pickup processing system

Publications (2)

Publication Number Publication Date
KR20140113638A KR20140113638A (ko) 2014-09-24
KR102090343B1 true KR102090343B1 (ko) 2020-03-17

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Family Applications (1)

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Country Status (6)

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US (3) US9164182B2 (enExample)
JP (1) JP5895504B2 (enExample)
KR (1) KR102090343B1 (enExample)
CN (1) CN103988306B (enExample)
TW (1) TWI491058B (enExample)
WO (1) WO2013089209A2 (enExample)

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JP5895504B2 (ja) 2011-12-15 2016-03-30 ソニー株式会社 撮像パネルおよび撮像処理システム
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WO2016132764A1 (ja) * 2015-02-19 2016-08-25 ソニー株式会社 放射線検出器、放射線検出器の製造方法および撮像装置
JP2017009725A (ja) * 2015-06-19 2017-01-12 ソニー株式会社 表示装置
WO2017041221A1 (en) * 2015-09-08 2017-03-16 Shenzhen Xpectvision Technology Co., Ltd. Methods for making an x-ray detector
EP3359981B1 (en) * 2015-10-09 2021-05-26 Shenzhen Xpectvision Technology Co., Ltd. Packaging methods of semiconductor x-ray detectors
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WO2018006258A1 (en) * 2016-07-05 2018-01-11 Shenzhen Xpectvision Technology Co., Ltd. Bonding materials of dissimilar coefficients of thermal expansion
TWI613804B (zh) * 2017-09-04 2018-02-01 友達光電股份有限公司 光感測裝置
DE102018200845B4 (de) * 2018-01-19 2021-05-06 Siemens Healthcare Gmbh Montageverfahren für die Herstellung eines Röntgendetektors, Röntgendetektor und Röntgengerät
JP2019191018A (ja) * 2018-04-26 2019-10-31 ソニー株式会社 測距装置及び測距モジュール
CN111134705B (zh) * 2020-01-21 2023-10-13 上海奕瑞光电子科技股份有限公司 一种放射线图像探测器及其制作方法
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Also Published As

Publication number Publication date
CN103988306A (zh) 2014-08-13
JP5895504B2 (ja) 2016-03-30
WO2013089209A3 (en) 2013-08-15
WO2013089209A2 (en) 2013-06-20
US20160033655A1 (en) 2016-02-04
US10663604B2 (en) 2020-05-26
US20170219722A1 (en) 2017-08-03
TW201330303A (zh) 2013-07-16
US20140326892A1 (en) 2014-11-06
CN103988306B (zh) 2017-03-08
JP2013124976A (ja) 2013-06-24
US9651683B2 (en) 2017-05-16
TWI491058B (zh) 2015-07-01
KR20140113638A (ko) 2014-09-24
US9164182B2 (en) 2015-10-20

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