KR102035122B1 - 반도체 기판 - Google Patents

반도체 기판 Download PDF

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Publication number
KR102035122B1
KR102035122B1 KR1020197004382A KR20197004382A KR102035122B1 KR 102035122 B1 KR102035122 B1 KR 102035122B1 KR 1020197004382 A KR1020197004382 A KR 1020197004382A KR 20197004382 A KR20197004382 A KR 20197004382A KR 102035122 B1 KR102035122 B1 KR 102035122B1
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single crystal
sic
interface
substrate
nitrogen
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KR20190021475A (ko
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코 이마오카
타카노리 무라사키
토시히사 시모
히데츠구 우치다
아키유키 미나미
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가부시키가이샤 사이콕스
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    • H01L21/185—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P10/00—Bonding of wafers, substrates or parts of devices
    • H10P10/12—Bonding of semiconductor wafers or semiconductor substrates to semiconductor wafers or semiconductor substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P10/00—Bonding of wafers, substrates or parts of devices
    • H10P10/12—Bonding of semiconductor wafers or semiconductor substrates to semiconductor wafers or semiconductor substrates
    • H10P10/128—Bonding of semiconductor wafers or semiconductor substrates to semiconductor wafers or semiconductor substrates by direct semiconductor to semiconductor bonding
    • H01L21/02378—
    • H01L21/02595—
    • H01L21/02598—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2902—Materials being Group IVA materials
    • H10P14/2904—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3451—Structure
    • H10P14/3452—Microstructure
    • H10P14/3456—Polycrystalline
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3451—Structure
    • H10P14/3452—Microstructure
    • H10P14/3458—Monocrystalline
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H01L2924/01006—
    • H01L2924/01007—
    • H01L2924/01014—
    • H01L2924/01015—

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  • Recrystallisation Techniques (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
KR1020197004382A 2016-07-19 2017-07-13 반도체 기판 Active KR102035122B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2016141782A JP6387375B2 (ja) 2016-07-19 2016-07-19 半導体基板
JPJP-P-2016-141782 2016-07-19
PCT/JP2017/025600 WO2018016417A1 (ja) 2016-07-19 2017-07-13 半導体基板

Publications (2)

Publication Number Publication Date
KR20190021475A KR20190021475A (ko) 2019-03-05
KR102035122B1 true KR102035122B1 (ko) 2019-10-22

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US (1) US10680068B2 (enExample)
EP (1) EP3489990B1 (enExample)
JP (1) JP6387375B2 (enExample)
KR (1) KR102035122B1 (enExample)
CN (1) CN109478495B (enExample)
WO (1) WO2018016417A1 (enExample)

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WO2020195197A1 (ja) 2019-03-27 2020-10-01 日本碍子株式会社 ＳｉＣ複合基板及び半導体デバイス用複合基板
WO2020195196A1 (ja) 2019-03-27 2020-10-01 日本碍子株式会社 ＳｉＣ複合基板及び半導体デバイス用複合基板
JP7077288B2 (ja) 2019-09-27 2022-05-30 東海カーボン株式会社 多結晶ＳｉＣ成形体
JP7155089B2 (ja) 2019-09-27 2022-10-18 東海カーボン株式会社 多結晶ＳｉＣ成形体
JP7239432B2 (ja) 2019-09-27 2023-03-14 東海カーボン株式会社 多結晶ＳｉＣ成形体の製造方法
EP4044212B1 (en) * 2019-11-14 2024-02-14 Huawei Digital Power Technologies Co., Ltd. Semiconductor substrate, manufacturing method therefor, and semiconductor device
JP7400389B2 (ja) * 2019-11-21 2023-12-19 住友金属鉱山株式会社 炭化珪素多結晶膜、炭化珪素多結晶膜の製造方法および炭化珪素多結晶膜の成膜装置
JP7512761B2 (ja) * 2020-08-19 2024-07-09 住友金属鉱山株式会社 基板接合装置
FR3123759B1 (fr) * 2021-06-03 2023-06-23 Soitec Silicon On Insulator Procede de fabrication d’une structure semi-conductrice comprenant une couche utile en carbure de silicium aux proprietes electriques ameliorees
CN113658849B (zh) * 2021-07-06 2025-02-21 华为技术有限公司 复合衬底及其制备方法、半导体器件、电子设备
FR3130296B1 (fr) * 2021-12-14 2023-11-03 Soitec Silicon On Insulator Procede de fabrication d’une structure semi-conductrice comprenant un substrat de carbure de silicium polycristallin et une couche active de carbure de silicium monocristallin
CN114864424A (zh) * 2022-05-09 2022-08-05 中国科学院上海微系统与信息技术研究所 一种碳化硅衬底的制备方法及碳化硅衬底
CN114864529B (zh) * 2022-05-18 2024-07-19 北京青禾晶元半导体科技有限责任公司 一种碳化硅复合基板及其制造方法与应用
JP2024025064A (ja) * 2022-08-10 2024-02-26 株式会社サイコックス ＳｉＣ単結晶転写用複合基板、ＳｉＣ単結晶転写用複合基板の製造方法、およびＳｉＣ接合基板の製造方法
JP7359399B1 (ja) * 2022-08-29 2023-10-11 株式会社サイコックス 半導体基板および半導体基板の製造方法
CN115565856A (zh) * 2022-11-04 2023-01-03 南瑞联研半导体有限责任公司 一种SiC功率器件欧姆接触、制备方法及应用
CN115662881B (zh) * 2022-12-21 2023-03-17 青禾晶元(天津)半导体材料有限公司 一种复合碳化硅衬底及其制备方法
FR3153930B1 (fr) * 2023-10-04 2025-10-03 Soitec Silicon On Insulator Structure semi-conductrice a base de carbure de silicium pour applications de puissance et procede de fabrication associe
WO2025164650A1 (ja) * 2024-02-01 2025-08-07 ローム株式会社 半導体装置の製造方法
DE102024207891A1 (de) * 2024-08-20 2026-02-26 Robert Bosch Gesellschaft mit beschränkter Haftung Verfahren zum Herstellen eines technischen Halbleitersubstrats und technisches Halbleitersubstrat

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JP2008069059A (ja) 2006-09-15 2008-03-27 Covalent Materials Corp ＳｉＣ焼結体の接合体、ＳｉＣ焼結体の接合体の接合方法
JP2008230946A (ja) * 2007-03-23 2008-10-02 Kwansei Gakuin 単結晶炭化ケイ素の液相エピタキシャル成長方法、単結晶炭化ケイ素基板の製造方法、及び単結晶炭化ケイ素基板
JP2011119412A (ja) 2009-12-02 2011-06-16 Kwansei Gakuin 半導体ウエハの製造方法
WO2016006663A1 (ja) 2014-07-10 2016-01-14 株式会社豊田自動織機 半導体基板および半導体基板の製造方法

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EP1901345A1 (en) * 2006-08-30 2008-03-19 Siltronic AG Multilayered semiconductor wafer and process for manufacturing the same
JP5446148B2 (ja) 2008-07-02 2014-03-19 富士電機株式会社 炭化珪素半導体装置の製造方法
JP5455595B2 (ja) 2008-12-11 2014-03-26 信越化学工業株式会社 貼り合わせウェーハの製造方法
JP5389627B2 (ja) 2008-12-11 2014-01-15 信越化学工業株式会社 ワイドバンドギャップ半導体を積層した複合基板の製造方法
JP5420968B2 (ja) 2009-05-07 2014-02-19 信越化学工業株式会社 貼り合わせウェーハの製造方法
JP5464544B2 (ja) * 2009-05-12 2014-04-09 学校法人関西学院 エピタキシャル成長層付き単結晶ＳｉＣ基板、炭素供給フィード基板、及び炭素ナノ材料付きＳｉＣ基板
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JP5477302B2 (ja) 2011-01-06 2014-04-23 株式会社デンソー 炭化珪素半導体基板の製造方法および炭化珪素半導体装置の製造方法
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JP2008069059A (ja) 2006-09-15 2008-03-27 Covalent Materials Corp ＳｉＣ焼結体の接合体、ＳｉＣ焼結体の接合体の接合方法
JP2008230946A (ja) * 2007-03-23 2008-10-02 Kwansei Gakuin 単結晶炭化ケイ素の液相エピタキシャル成長方法、単結晶炭化ケイ素基板の製造方法、及び単結晶炭化ケイ素基板
JP2011119412A (ja) 2009-12-02 2011-06-16 Kwansei Gakuin 半導体ウエハの製造方法
WO2016006663A1 (ja) 2014-07-10 2016-01-14 株式会社豊田自動織機 半導体基板および半導体基板の製造方法

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US20200006493A1 (en) 2020-01-02
EP3489990A1 (en) 2019-05-29
EP3489990A4 (en) 2020-01-15
JP2018014372A (ja) 2018-01-25
JP6387375B2 (ja) 2018-09-05
CN109478495B (zh) 2020-10-02
CN109478495A (zh) 2019-03-15
KR20190021475A (ko) 2019-03-05
US10680068B2 (en) 2020-06-09
EP3489990B1 (en) 2021-05-26
WO2018016417A1 (ja) 2018-01-25

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