KR102034900B1 - 반도체 장치 및 그 제작 방법 - Google Patents

반도체 장치 및 그 제작 방법 Download PDF

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KR102034900B1
KR102034900B1 KR1020130036183A KR20130036183A KR102034900B1 KR 102034900 B1 KR102034900 B1 KR 102034900B1 KR 1020130036183 A KR1020130036183 A KR 1020130036183A KR 20130036183 A KR20130036183 A KR 20130036183A KR 102034900 B1 KR102034900 B1 KR 102034900B1
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wiring
insulating layer
layer
oxide
addition
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KR20130116016A (ko
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？페이 야마자키
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가부시키가이샤 한도오따이 에네루기 켄큐쇼
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/60—Protection against electrostatic charges or discharges, e.g. Faraday shields
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441—Interconnections, e.g. scanning lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441—Interconnections, e.g. scanning lines
    • H10D86/443—Interconnections, e.g. scanning lines adapted for preventing breakage, peeling or short circuiting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Thin Film Transistor (AREA)
  • Electroluminescent Light Sources (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
KR1020130036183A 2012-04-13 2013-04-03 반도체 장치 및 그 제작 방법 Active KR102034900B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2012-092351 2012-04-13
JP2012092351 2012-04-13

Publications (2)

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KR20130116016A KR20130116016A (ko) 2013-10-22
KR102034900B1 true KR102034900B1 (ko) 2019-10-21

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US (2) US9166054B2 (enExample)
JP (2) JP6343122B2 (enExample)
KR (1) KR102034900B1 (enExample)

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US8673426B2 (en) * 2011-06-29 2014-03-18 Semiconductor Energy Laboratory Co., Ltd. Driver circuit, method of manufacturing the driver circuit, and display device including the driver circuit
KR20130105392A (ko) * 2012-03-14 2013-09-25 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
JP2014045175A (ja) 2012-08-02 2014-03-13 Semiconductor Energy Lab Co Ltd 半導体装置
US8927985B2 (en) 2012-09-20 2015-01-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR101695296B1 (ko) * 2012-12-27 2017-01-13 엘지디스플레이 주식회사 박막트랜지스터 어레이 기판 및 그의 제조방법
CN103441119B (zh) * 2013-07-05 2016-03-30 京东方科技集团股份有限公司 一种制造esd器件的方法、esd器件和显示面板
KR102392059B1 (ko) * 2013-07-29 2022-04-28 삼성전자주식회사 반도체 소자 및 그 제조 방법
KR102099881B1 (ko) 2013-09-03 2020-05-15 삼성전자 주식회사 반도체 소자 및 그 제조 방법
KR102705567B1 (ko) * 2013-12-02 2024-09-12 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치
US9601634B2 (en) 2013-12-02 2017-03-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP6444714B2 (ja) * 2013-12-20 2018-12-26 株式会社半導体エネルギー研究所 半導体装置の作製方法
WO2015132697A1 (en) * 2014-03-07 2015-09-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR102441560B1 (ko) * 2015-04-07 2022-09-08 삼성디스플레이 주식회사 박막트랜지스터 어레이 기판 및 이를 구비한 유기 발광 표시 장치
CN104880879A (zh) * 2015-06-19 2015-09-02 京东方科技集团股份有限公司 Coa阵列基板及其制造方法、显示装置
CN205384420U (zh) * 2016-01-07 2016-07-13 合肥鑫晟光电科技有限公司 显示基板和显示装置
JP6802653B2 (ja) * 2016-07-15 2020-12-16 株式会社ジャパンディスプレイ 表示装置
CN117348303A (zh) 2017-01-16 2024-01-05 株式会社半导体能源研究所 显示装置
US10775490B2 (en) * 2017-10-12 2020-09-15 Infineon Technologies Ag Radio frequency systems integrated with displays and methods of formation thereof
JP2019161182A (ja) * 2018-03-16 2019-09-19 株式会社リコー 電界効果型トランジスタ及びその製造方法、表示素子、表示装置、システム
JP6564965B1 (ja) 2018-03-28 2019-08-21 堺ディスプレイプロダクト株式会社 有機ｅｌ表示装置及びその製造方法
TWI667780B (zh) * 2018-08-02 2019-08-01 友達光電股份有限公司 顯示面板
JP6802887B2 (ja) * 2019-07-29 2020-12-23 堺ディスプレイプロダクト株式会社 有機ｅｌ表示装置及びその製造方法
US12113115B2 (en) 2021-02-09 2024-10-08 Taiwan Semiconductor Manufacturing Company Limited Thin film transistor including a compositionally-graded gate dielectric and methods for forming the same

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KR20130116016A (ko) 2013-10-22
US20160043112A1 (en) 2016-02-11
JP2018101807A (ja) 2018-06-28
US10153307B2 (en) 2018-12-11
US9166054B2 (en) 2015-10-20
US20130270562A1 (en) 2013-10-17
JP6480619B2 (ja) 2019-03-13
JP6343122B2 (ja) 2018-06-13
JP2013236066A (ja) 2013-11-21

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