KR101955829B1 - 부착물의 제거 방법 및 드라이 에칭 방법 - Google Patents

부착물의 제거 방법 및 드라이 에칭 방법 Download PDF

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KR101955829B1
KR101955829B1 KR1020177001588A KR20177001588A KR101955829B1 KR 101955829 B1 KR101955829 B1 KR 101955829B1 KR 1020177001588 A KR1020177001588 A KR 1020177001588A KR 20177001588 A KR20177001588 A KR 20177001588A KR 101955829 B1 KR101955829 B1 KR 101955829B1
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gas
etching
chamber
substrate
iodine
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KR20170019460A (ko
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아키오우 기쿠치
마사노리 와타리
켄지 카메다
신 히야마
야스토시 츠보타
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샌트랄 글래스 컴퍼니 리미티드
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    • H01L21/3065—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/30—Cleaning after the substrates have been singulated
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B5/00—Cleaning by methods involving the use of air flow or gas flow
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B9/00—Cleaning hollow articles by methods or apparatus specially adapted thereto
    • H01L21/02049—
    • H01L21/302—
    • H01L21/304—
    • H01L21/67034—
    • H01L21/67098—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/64—Wet etching of semiconductor materials
    • H10P50/642—Chemical etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/10—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H10P70/12—Cleaning before device manufacture, i.e. Begin-Of-Line process by dry cleaning only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/10—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H10P70/12—Cleaning before device manufacture, i.e. Begin-Of-Line process by dry cleaning only
    • H10P70/125—Cleaning before device manufacture, i.e. Begin-Of-Line process by dry cleaning only with gaseous HF
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H10P72/0408—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
KR1020177001588A 2014-09-24 2015-09-07 부착물의 제거 방법 및 드라이 에칭 방법 Active KR101955829B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JPJP-P-2014-193435 2014-09-24
JP2014193435A JP6210039B2 (ja) 2014-09-24 2014-09-24 付着物の除去方法及びドライエッチング方法
PCT/JP2015/075368 WO2016047429A1 (ja) 2014-09-24 2015-09-07 付着物の除去方法、ドライエッチング方法、及び基板処理装置

Publications (2)

Publication Number Publication Date
KR20170019460A KR20170019460A (ko) 2017-02-21
KR101955829B1 true KR101955829B1 (ko) 2019-03-07

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KR1020177001588A Active KR101955829B1 (ko) 2014-09-24 2015-09-07 부착물의 제거 방법 및 드라이 에칭 방법

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Country Link
US (1) US10153153B2 (https=)
JP (1) JP6210039B2 (https=)
KR (1) KR101955829B1 (https=)
CN (1) CN106663626B (https=)
WO (1) WO2016047429A1 (https=)

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JPWO2018043446A1 (ja) 2016-08-31 2019-07-25 国立大学法人横浜国立大学 半導体製造用チャンバのクリーニング方法
WO2018181104A1 (ja) * 2017-03-27 2018-10-04 関東電化工業株式会社 ドライエッチング方法またはドライクリーニング方法
JP7053991B2 (ja) * 2017-03-28 2022-04-13 セントラル硝子株式会社 ドライエッチング方法、半導体素子の製造方法及びチャンバークリーニング方法
JP7157299B2 (ja) * 2017-07-14 2022-10-20 セントラル硝子株式会社 酸フッ化金属の処理方法及びクリーニング方法
JP6981267B2 (ja) * 2018-01-17 2021-12-15 東京エレクトロン株式会社 エッチング方法及びエッチング装置
JP7058520B2 (ja) * 2018-03-05 2022-04-22 東京エレクトロン株式会社 シリコン膜の成膜方法及び基板処理装置
CN111886674B (zh) * 2018-03-29 2024-03-12 中央硝子株式会社 基板处理用气体、保管容器和基板处理方法
CN110491770B (zh) * 2018-05-15 2024-04-09 东京毅力科创株式会社 基板处理方法、存储介质以及基板处理装置
JP7174180B2 (ja) * 2018-05-16 2022-11-17 東京エレクトロン株式会社 シリコン含有膜のエッチング方法、コンピュータ記憶媒体、及びシリコン含有膜のエッチング装置
JP7072440B2 (ja) * 2018-05-16 2022-05-20 東京エレクトロン株式会社 シリコン含有膜のエッチング方法、コンピュータ記憶媒体、及びシリコン含有膜のエッチング装置
JP2020068221A (ja) * 2018-10-22 2020-04-30 東京エレクトロン株式会社 エッチング方法及びプラズマ処理装置
JP6905505B2 (ja) * 2018-12-13 2021-07-21 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 半導体装置の製造方法、表面処理方法、基板処理装置、およびプログラム
CN113261081B (zh) * 2018-12-25 2024-04-12 株式会社力森诺科 附着物除去方法和成膜方法
TWI694872B (zh) * 2019-01-18 2020-06-01 弘塑科技股份有限公司 批次基板乾燥設備及其基板乾燥風刀裝置
US12136795B2 (en) * 2019-06-27 2024-11-05 Mitsubishi Electric Corporation Method for producing photosemiconductor device
WO2021079780A1 (ja) * 2019-10-25 2021-04-29 昭和電工株式会社 窒化ケイ素のエッチング方法及び半導体素子の製造方法
WO2021171986A1 (ja) * 2020-02-26 2021-09-02 昭和電工株式会社 ドライエッチング方法、半導体素子の製造方法、及びクリーニング方法
JP7258826B2 (ja) * 2020-06-30 2023-04-17 株式会社Kokusai Electric 基板処理方法、半導体装置の製造方法、基板処理装置、およびプログラム
JP7430677B2 (ja) 2021-09-21 2024-02-13 株式会社Kokusai Electric 基板処理装置、半導体装置の製造方法およびプログラム
CN116344341A (zh) * 2021-12-24 2023-06-27 成都高真科技有限公司 一种晶圆表面聚合膜质去除方法及测试晶圆再生方法
CN115318761B (zh) * 2022-08-16 2023-10-13 长鑫存储技术有限公司 腔室清洗方法
US12454647B2 (en) * 2022-12-07 2025-10-28 National Cheng Kung University Method for reactive ion etching
TW202516644A (zh) * 2023-03-31 2025-04-16 日商東京威力科創股份有限公司 測定方法及基板處理裝置

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JP2008177209A (ja) * 2007-01-16 2008-07-31 Taiyo Nippon Sanso Corp プラズマエッチング方法

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Publication number Priority date Publication date Assignee Title
JP2000200782A (ja) 1998-10-26 2000-07-18 Hitachi Ltd 半導体製造装置のクリ―ニング方法
JP2008177209A (ja) * 2007-01-16 2008-07-31 Taiyo Nippon Sanso Corp プラズマエッチング方法

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Publication number Publication date
US20170200602A1 (en) 2017-07-13
JP6210039B2 (ja) 2017-10-11
US10153153B2 (en) 2018-12-11
CN106663626B (zh) 2019-11-05
WO2016047429A1 (ja) 2016-03-31
JP2016066658A (ja) 2016-04-28
CN106663626A (zh) 2017-05-10
KR20170019460A (ko) 2017-02-21

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