KR101952954B1 - 반도체 장치의 제작 방법 - Google Patents

반도체 장치의 제작 방법 Download PDF

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Publication number
KR101952954B1
KR101952954B1 KR1020120019810A KR20120019810A KR101952954B1 KR 101952954 B1 KR101952954 B1 KR 101952954B1 KR 1020120019810 A KR1020120019810 A KR 1020120019810A KR 20120019810 A KR20120019810 A KR 20120019810A KR 101952954 B1 KR101952954 B1 KR 101952954B1
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South Korea
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layer
insulating layer
oxide semiconductor
gate electrode
oxygen
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Expired - Fee Related
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Korean (ko)
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KR20120100753A (ko
Inventor
신지 오노
유이찌 사또
준이찌 고에즈까
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가부시키가이샤 한도오따이 에네루기 켄큐쇼
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02551—Group 12/16 materials
    • H01L21/02554—Oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02565—Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H10D30/6739—Conductor-insulator-semiconductor electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Thin Film Transistor (AREA)
KR1020120019810A 2011-03-04 2012-02-27 반도체 장치의 제작 방법 Expired - Fee Related KR101952954B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2011-047879 2011-03-04
JP2011047879 2011-03-04

Publications (2)

Publication Number Publication Date
KR20120100753A KR20120100753A (ko) 2012-09-12
KR101952954B1 true KR101952954B1 (ko) 2019-02-27

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Country Link
US (1) US9646829B2 (enExample)
JP (1) JP6029291B2 (enExample)
KR (1) KR101952954B1 (enExample)

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US20160043142A1 (en) * 2013-03-21 2016-02-11 Industry-University Cooperation Foundation Hanyang University Two-terminal switching element having bidirectional switching characteristic, resistive memory cross-point array including same, and method for manufacturing two-terminal switching element and cross-point resistive memory array
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WO2015046204A1 (ja) * 2013-09-27 2015-04-02 三菱電機株式会社 Ｔｆｔアレイ基板、液晶表示装置、およびｔｆｔアレイ基板の製造方法
US9455349B2 (en) 2013-10-22 2016-09-27 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor thin film transistor with reduced impurity diffusion
TWI658597B (zh) 2014-02-07 2019-05-01 日商半導體能源研究所股份有限公司 半導體裝置
US20160005871A1 (en) * 2014-07-04 2016-01-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2016139560A1 (en) 2015-03-03 2016-09-09 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor film, semiconductor device including the oxide semiconductor film, and display device including the semiconductor device
TWI695513B (zh) * 2015-03-27 2020-06-01 日商半導體能源研究所股份有限公司 半導體裝置及電子裝置
KR102561113B1 (ko) 2015-08-13 2023-07-28 삼성디스플레이 주식회사 유기 발광 표시 장치 및 그 제조 방법
KR102796428B1 (ko) * 2016-02-12 2025-04-16 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 상기 반도체 장치를 포함하는 표시 장치
CN106876539B (zh) * 2017-02-17 2019-04-05 深圳市华星光电技术有限公司 石墨烯发光晶体管及其制作方法、主动石墨烯发光显示器
JP6917779B2 (ja) * 2017-05-29 2021-08-11 株式会社ジャパンディスプレイ 表示装置
US10629494B2 (en) * 2017-06-26 2020-04-21 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and method
US11049887B2 (en) 2017-11-10 2021-06-29 Applied Materials, Inc. Layer stack for display applications
US20220043335A1 (en) * 2018-09-27 2022-02-10 Hoya Corporation Mask blank, transfer mask, and semiconductor-device manufacturing method
WO2020089733A1 (ja) 2018-11-02 2020-05-07 株式会社半導体エネルギー研究所 半導体装置
US12369462B2 (en) * 2021-08-13 2025-07-22 Samsung Display Co., Ltd. Display apparatus and method of manufacturing the same

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