KR101818272B1 - 시클로헥사실란 화합물의 제조 방법 - Google Patents

시클로헥사실란 화합물의 제조 방법 Download PDF

Info

Publication number
KR101818272B1
KR101818272B1 KR1020127021848A KR20127021848A KR101818272B1 KR 101818272 B1 KR101818272 B1 KR 101818272B1 KR 1020127021848 A KR1020127021848 A KR 1020127021848A KR 20127021848 A KR20127021848 A KR 20127021848A KR 101818272 B1 KR101818272 B1 KR 101818272B1
Authority
KR
South Korea
Prior art keywords
tertiary
trichlorosilane
reagent composition
divalent anion
reagent
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1020127021848A
Other languages
English (en)
Korean (ko)
Other versions
KR20130010111A (ko
Inventor
아루무가사미 에란고반
케네스 앤더슨
필립 알 바우드조크
더글라스 엘 슐츠
Original Assignee
엔디에스유 리서치 파운데이션
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 엔디에스유 리서치 파운데이션 filed Critical 엔디에스유 리서치 파운데이션
Publication of KR20130010111A publication Critical patent/KR20130010111A/ko
Application granted granted Critical
Publication of KR101818272B1 publication Critical patent/KR101818272B1/ko
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00Silicon; Compounds thereof
    • C01B33/08Compounds containing halogen
    • C01B33/107Halogenated silanes
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00Silicon; Compounds thereof
    • C01B33/04Hydrides of silicon
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00Silicon; Compounds thereof
    • C01B33/08Compounds containing halogen
    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07FACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F7/00Compounds containing elements of Groups 4 or 14 of the Periodic Table
    • C07F7/02Silicon compounds
    • C07F7/025Silicon compounds without C-silicon linkages
    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07FACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F7/00Compounds containing elements of Groups 4 or 14 of the Periodic Table
    • C07F7/02Silicon compounds
    • C07F7/21Cyclic compounds having at least one ring containing silicon, but no carbon in the ring
    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07FACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F9/00Compounds containing elements of Groups 5 or 15 of the Periodic Table
    • C07F9/02Phosphorus compounds
    • C07F9/28Phosphorus compounds with one or more P—C bonds
    • C07F9/54Quaternary phosphonium compounds
    • C07F9/5442Aromatic phosphonium compounds (P-C aromatic linkage)

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Molecular Biology (AREA)
KR1020127021848A 2010-01-28 2011-01-25 시클로헥사실란 화합물의 제조 방법 Expired - Fee Related KR101818272B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US29928710P 2010-01-28 2010-01-28
US61/299,287 2010-01-28
US31111810P 2010-03-05 2010-03-05
US61/311,118 2010-03-05
PCT/US2011/022360 WO2011094191A1 (en) 2010-01-28 2011-01-25 Method of producing cyclohexasilane compounds

Publications (2)

Publication Number Publication Date
KR20130010111A KR20130010111A (ko) 2013-01-25
KR101818272B1 true KR101818272B1 (ko) 2018-02-21

Family

ID=44319713

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020127021848A Expired - Fee Related KR101818272B1 (ko) 2010-01-28 2011-01-25 시클로헥사실란 화합물의 제조 방법

Country Status (6)

Country Link
US (1) US8975429B2 (enExample)
EP (1) EP2528864B1 (enExample)
JP (1) JP5697692B2 (enExample)
KR (1) KR101818272B1 (enExample)
CN (1) CN102762497B (enExample)
WO (1) WO2011094191A1 (enExample)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2528864B1 (en) 2010-01-28 2017-03-29 Ndsu Research Foundation Method of producing cyclohexasilane compounds
DE102010040231A1 (de) * 2010-09-03 2012-03-08 Evonik Degussa Gmbh p-Dotierte Siliciumschichten
JP5808646B2 (ja) * 2011-10-31 2015-11-10 株式会社日本触媒 環状シラン中間体の製造方法および環状水素化シランもしくは環状有機シランの製造方法
JP6014392B2 (ja) * 2012-07-04 2016-10-25 株式会社日本触媒 シクロヘキサシラン類の製造方法
JP5902572B2 (ja) * 2012-07-04 2016-04-13 株式会社日本触媒 ケイ素−ハロゲン結合を有するハロゲン化環状シラン化合物またはその塩の製造方法
JP6063310B2 (ja) * 2013-03-18 2017-01-18 株式会社日本触媒 環状シランの製造方法
US11091649B2 (en) 2013-09-05 2021-08-17 Jiangsu Nata Opto-Electronic Materials Co. Ltd. 2,2,4,4-tetrasilylpentasilane and its compositions, methods and uses
TWI634073B (zh) 2013-09-05 2018-09-01 道康寧公司 2,2,4,4-四矽基五矽烷及其組成物、方法及用途
DE102013021306A1 (de) 2013-12-19 2015-06-25 Johann Wolfgang Goethe-Universität Verfahren zum Herstellen von linearen, cyclischen und/oder käfigartigen perhalogenierten Oligo- und Polysilyl-Anionen
JP6349246B2 (ja) * 2013-12-20 2018-06-27 株式会社日本触媒 環状シラン中性錯体の製造方法および環状水素化シランもしくは環状有機シランの製造方法
DE102014118658B4 (de) 2014-12-15 2020-12-31 Evonik Operations Gmbh Verfahren zum Herstellen von perhalogeniertem Hexasilan-Anion
WO2016095898A2 (de) 2014-12-15 2016-06-23 Johann Wolfgang Goethe-Universität Verfahren zum herstellen von perhalogeniertem hexasilan-anion und verfahren zum herstellen einer cyclischen silanverbindung
JP5942027B2 (ja) * 2015-09-04 2016-06-29 株式会社日本触媒 環状シラン中間体の製造方法および環状水素化シランもしくは環状有機シランの製造方法
US10544171B2 (en) 2018-03-13 2020-01-28 Nippon Shokubai Co., Ltd Process for producing cyclic hydrogenated silane compound
WO2020205723A1 (en) * 2019-03-29 2020-10-08 The Coretec Group Inc. Method of preparing cyclosilane

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5942637A (en) 1998-03-30 1999-08-24 North Dakota State University Research Foundation Compounds containing tetradecachlorocyclohexasilane dianion
US20060281841A1 (en) 2004-07-30 2006-12-14 Weller Keith J Silane compositions, processes for their preparation and rubber compositions containing same

Family Cites Families (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3044845A (en) 1958-09-30 1962-07-17 Union Carbide Corp Process for producing dichlorosilane
FR2290448A1 (fr) 1974-11-07 1976-06-04 Rhone Poulenc Ind Dismutation du trichlorosilane en presence de tetraalcoyluree
US4447633A (en) 1983-06-14 1984-05-08 North Dakota State University Ultrasonically promoted hydrosilations
FR2552436B1 (fr) 1983-09-28 1985-10-25 Rhone Poulenc Spec Chim Nouveau procede de fabrication d'hydrogeno-silanes par reaction de redistribution
US4683147A (en) 1984-04-16 1987-07-28 Canon Kabushiki Kaisha Method of forming deposition film
US4657777A (en) 1984-12-17 1987-04-14 Canon Kabushiki Kaisha Formation of deposited film
US4695331A (en) 1985-05-06 1987-09-22 Chronar Corporation Hetero-augmentation of semiconductor materials
US4910153A (en) 1986-02-18 1990-03-20 Solarex Corporation Deposition feedstock and dopant materials useful in the fabrication of hydrogenated amorphous silicon alloys for photovoltaic devices and other semiconductor devices
DE3711444A1 (de) 1987-04-04 1988-10-13 Huels Troisdorf Verfahren und vorrichtung zur herstellung von dichlorsilan
US4841083A (en) 1987-06-03 1989-06-20 Mitsui Toatsu Chemicals, Incorporated Ladder polysilanes
US4827009A (en) 1987-09-03 1989-05-02 North Dakota State University Hydrosilation process
EP0902030B1 (en) * 1997-08-27 2002-10-02 Dow Corning Corporation Compounds containing tetradecachlorocyclohexasilane dianion
CN1223011C (zh) 1999-03-30 2005-10-12 精工爱普生株式会社 太阳能电池的制造方法
US6767775B1 (en) 1999-03-30 2004-07-27 Seiko Epson Corporation Method of manufacturing thin-film transistor
TW539709B (en) 1999-03-30 2003-07-01 Jsr Corp Coating composition
KR100436319B1 (ko) 1999-03-30 2004-06-18 제이에스알 가부시끼가이샤 실리콘 막의 형성방법
DE60038931D1 (de) 1999-03-30 2008-07-03 Seiko Epson Corp Verfahren zur Herstellung einer Siliziumschicht und Tintenstrahlzusammensetzung für Tintenstrahldrucker
DE60128611T2 (de) 2000-03-13 2008-01-31 Jsr Corp. Cyclosilan, eine flüssige Zusammensetzung und ein Verfahren zur Bildung eines Silicium-Films
JP3745959B2 (ja) 2000-12-28 2006-02-15 セイコーエプソン株式会社 シリコン薄膜パターンの形成方法
WO2002080244A2 (en) 2001-02-12 2002-10-10 Asm America, Inc. Improved process for deposition of semiconductor films
KR100627203B1 (ko) 2001-08-14 2006-09-22 제이에스알 가부시끼가이샤 실란 조성물, 실리콘막의 형성법 및 태양 전지의 제조법
JP2003313299A (ja) 2002-04-22 2003-11-06 Seiko Epson Corp 高次シラン組成物及び該組成物を用いたシリコン膜の形成方法
AU2003262236A1 (en) 2002-08-23 2004-03-11 Jsr Corporation Composition for forming silicon film and method for forming silicon film
JP4042685B2 (ja) 2003-03-26 2008-02-06 セイコーエプソン株式会社 トランジスタの製造方法
US7879696B2 (en) 2003-07-08 2011-02-01 Kovio, Inc. Compositions and methods for forming a semiconducting and/or silicon-containing film, and structures formed therefrom
US7498015B1 (en) 2004-02-27 2009-03-03 Kovio, Inc. Method of making silane compositions
US20060025506A1 (en) * 2004-07-30 2006-02-02 Weller Keith J Silane compositions, processes for their preparation and rubber compositions containing same
US7314513B1 (en) 2004-09-24 2008-01-01 Kovio, Inc. Methods of forming a doped semiconductor thin film, doped semiconductor thin film structures, doped silane compositions, and methods of making such compositions
US7674926B1 (en) 2004-10-01 2010-03-09 Kovio, Inc. Dopant group-substituted semiconductor precursor compounds, compositions containing the same, and methods of making such compounds and compositions
US7485691B1 (en) 2004-10-08 2009-02-03 Kovio, Inc Polysilane compositions, methods for their synthesis and films formed therefrom
US7943721B2 (en) 2005-10-05 2011-05-17 Kovio, Inc. Linear and cross-linked high molecular weight polysilanes, polygermanes, and copolymers thereof, compositions containing the same, and methods of making and using such compounds and compositions
EP2528864B1 (en) 2010-01-28 2017-03-29 Ndsu Research Foundation Method of producing cyclohexasilane compounds

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5942637A (en) 1998-03-30 1999-08-24 North Dakota State University Research Foundation Compounds containing tetradecachlorocyclohexasilane dianion
US20060281841A1 (en) 2004-07-30 2006-12-14 Weller Keith J Silane compositions, processes for their preparation and rubber compositions containing same

Also Published As

Publication number Publication date
JP5697692B2 (ja) 2015-04-08
JP2013518109A (ja) 2013-05-20
EP2528864A4 (en) 2015-12-30
US8975429B2 (en) 2015-03-10
CN102762497B (zh) 2015-11-25
EP2528864B1 (en) 2017-03-29
US20120294791A1 (en) 2012-11-22
WO2011094191A1 (en) 2011-08-04
CN102762497A (zh) 2012-10-31
KR20130010111A (ko) 2013-01-25
EP2528864A1 (en) 2012-12-05

Similar Documents

Publication Publication Date Title
KR101818272B1 (ko) 시클로헥사실란 화합물의 제조 방법
JP4519955B2 (ja) テトラデカクロロシクロヘキサシラン・ジアニオン含有化合物
US5942637A (en) Compounds containing tetradecachlorocyclohexasilane dianion
JP5902572B2 (ja) ケイ素−ハロゲン結合を有するハロゲン化環状シラン化合物またはその塩の製造方法
TW200412348A (en) Process for the production and purification of Bis (tertiary-butylamino) silane
IE63185B1 (en) Preparation of organometallic amide compositions
JP5808646B2 (ja) 環状シラン中間体の製造方法および環状水素化シランもしくは環状有機シランの製造方法
US9682866B2 (en) Neutral complex of cyclic silane, manufacturing method therefor, and method for manufacturing cyclic hydrogenated silane or cyclic organic silane
US20120165564A1 (en) Method for preparing purified aminosilane
JP6346555B2 (ja) 環状ハロシラン中性錯体
JP2015134755A (ja) 環状シラン中性錯体の製造方法および環状水素化シランもしくは環状有機シランの製造方法
JP2022513733A (ja) トリヨードシランの調製
US10858260B2 (en) Method for producing perhalogenated hexasilane anion and method for producing a cyclic silane compound
JPH101483A (ja) アリルシラン化合物の製造方法
Elangovan et al. Method of producing cyclohexasilane compounds
JP3934186B2 (ja) トリクロロシランの再配分方法
JP7229817B2 (ja) 環状水素化シラン化合物の製造方法
JP4891536B2 (ja) アミノアリール基含有有機ケイ素化合物の製造方法、並びに、その中間体の製造方法
JP6954615B2 (ja) ヒドロシランの製造方法
JP5942027B2 (ja) 環状シラン中間体の製造方法および環状水素化シランもしくは環状有機シランの製造方法
CN113677621A (zh) 制备环硅烷的方法
JP2020147476A (ja) 環状ハロシラン化合物の製造方法
Giering REACTIONS BETWEEN SODIUM PI-CYCLOPENTADIENYL IRON-DICARBONYLATE AND ORGANIC AND ORGANOSILYL-1, 2-DIHALIDES
JP2018123073A (ja) ヒドロシランの製造方法
JPH09316086A (ja) テキシルジメチルクロロシランとトリオルガノクロロシランの併産方法

Legal Events

Date Code Title Description
PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

R18-X000 Changes to party contact information recorded

St.27 status event code: A-3-3-R10-R18-oth-X000

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000

P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U12-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

PC1903 Unpaid annual fee

St.27 status event code: A-4-4-U10-U13-oth-PC1903

Not in force date: 20210109

Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

PC1903 Unpaid annual fee

St.27 status event code: N-4-6-H10-H13-oth-PC1903

Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

Not in force date: 20210109