CN102762497B - 产生环己硅烷化合物的方法 - Google Patents
产生环己硅烷化合物的方法 Download PDFInfo
- Publication number
- CN102762497B CN102762497B CN201180007314.9A CN201180007314A CN102762497B CN 102762497 B CN102762497 B CN 102762497B CN 201180007314 A CN201180007314 A CN 201180007314A CN 102762497 B CN102762497 B CN 102762497B
- Authority
- CN
- China
- Prior art keywords
- tertiary
- trichlorosilane
- reagent composition
- polyamine
- dianions
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/08—Compounds containing halogen
- C01B33/107—Halogenated silanes
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/04—Hydrides of silicon
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/08—Compounds containing halogen
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
- C07F7/02—Silicon compounds
- C07F7/025—Silicon compounds without C-silicon linkages
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
- C07F7/02—Silicon compounds
- C07F7/21—Cyclic compounds having at least one ring containing silicon, but no carbon in the ring
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F9/00—Compounds containing elements of Groups 5 or 15 of the Periodic Table
- C07F9/02—Phosphorus compounds
- C07F9/28—Phosphorus compounds with one or more P—C bonds
- C07F9/54—Quaternary phosphonium compounds
- C07F9/5442—Aromatic phosphonium compounds (P-C aromatic linkage)
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- Molecular Biology (AREA)
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US29928710P | 2010-01-28 | 2010-01-28 | |
| US61/299,287 | 2010-01-28 | ||
| US31111810P | 2010-03-05 | 2010-03-05 | |
| US61/311,118 | 2010-03-05 | ||
| PCT/US2011/022360 WO2011094191A1 (en) | 2010-01-28 | 2011-01-25 | Method of producing cyclohexasilane compounds |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102762497A CN102762497A (zh) | 2012-10-31 |
| CN102762497B true CN102762497B (zh) | 2015-11-25 |
Family
ID=44319713
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201180007314.9A Expired - Fee Related CN102762497B (zh) | 2010-01-28 | 2011-01-25 | 产生环己硅烷化合物的方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US8975429B2 (enExample) |
| EP (1) | EP2528864B1 (enExample) |
| JP (1) | JP5697692B2 (enExample) |
| KR (1) | KR101818272B1 (enExample) |
| CN (1) | CN102762497B (enExample) |
| WO (1) | WO2011094191A1 (enExample) |
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2528864B1 (en) | 2010-01-28 | 2017-03-29 | Ndsu Research Foundation | Method of producing cyclohexasilane compounds |
| DE102010040231A1 (de) * | 2010-09-03 | 2012-03-08 | Evonik Degussa Gmbh | p-Dotierte Siliciumschichten |
| JP5808646B2 (ja) * | 2011-10-31 | 2015-11-10 | 株式会社日本触媒 | 環状シラン中間体の製造方法および環状水素化シランもしくは環状有機シランの製造方法 |
| JP6014392B2 (ja) * | 2012-07-04 | 2016-10-25 | 株式会社日本触媒 | シクロヘキサシラン類の製造方法 |
| JP5902572B2 (ja) * | 2012-07-04 | 2016-04-13 | 株式会社日本触媒 | ケイ素−ハロゲン結合を有するハロゲン化環状シラン化合物またはその塩の製造方法 |
| JP6063310B2 (ja) * | 2013-03-18 | 2017-01-18 | 株式会社日本触媒 | 環状シランの製造方法 |
| US11091649B2 (en) | 2013-09-05 | 2021-08-17 | Jiangsu Nata Opto-Electronic Materials Co. Ltd. | 2,2,4,4-tetrasilylpentasilane and its compositions, methods and uses |
| TWI634073B (zh) | 2013-09-05 | 2018-09-01 | 道康寧公司 | 2,2,4,4-四矽基五矽烷及其組成物、方法及用途 |
| DE102013021306A1 (de) | 2013-12-19 | 2015-06-25 | Johann Wolfgang Goethe-Universität | Verfahren zum Herstellen von linearen, cyclischen und/oder käfigartigen perhalogenierten Oligo- und Polysilyl-Anionen |
| JP6349246B2 (ja) * | 2013-12-20 | 2018-06-27 | 株式会社日本触媒 | 環状シラン中性錯体の製造方法および環状水素化シランもしくは環状有機シランの製造方法 |
| DE102014118658B4 (de) | 2014-12-15 | 2020-12-31 | Evonik Operations Gmbh | Verfahren zum Herstellen von perhalogeniertem Hexasilan-Anion |
| WO2016095898A2 (de) | 2014-12-15 | 2016-06-23 | Johann Wolfgang Goethe-Universität | Verfahren zum herstellen von perhalogeniertem hexasilan-anion und verfahren zum herstellen einer cyclischen silanverbindung |
| JP5942027B2 (ja) * | 2015-09-04 | 2016-06-29 | 株式会社日本触媒 | 環状シラン中間体の製造方法および環状水素化シランもしくは環状有機シランの製造方法 |
| US10544171B2 (en) | 2018-03-13 | 2020-01-28 | Nippon Shokubai Co., Ltd | Process for producing cyclic hydrogenated silane compound |
| WO2020205723A1 (en) * | 2019-03-29 | 2020-10-08 | The Coretec Group Inc. | Method of preparing cyclosilane |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5942637A (en) * | 1998-03-30 | 1999-08-24 | North Dakota State University Research Foundation | Compounds containing tetradecachlorocyclohexasilane dianion |
| CN101023088A (zh) * | 2004-07-30 | 2007-08-22 | 通用电气公司 | 硅烷组合物、其制备方法和含有该硅烷组合物的橡胶组合物 |
Family Cites Families (32)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3044845A (en) | 1958-09-30 | 1962-07-17 | Union Carbide Corp | Process for producing dichlorosilane |
| FR2290448A1 (fr) | 1974-11-07 | 1976-06-04 | Rhone Poulenc Ind | Dismutation du trichlorosilane en presence de tetraalcoyluree |
| US4447633A (en) | 1983-06-14 | 1984-05-08 | North Dakota State University | Ultrasonically promoted hydrosilations |
| FR2552436B1 (fr) | 1983-09-28 | 1985-10-25 | Rhone Poulenc Spec Chim | Nouveau procede de fabrication d'hydrogeno-silanes par reaction de redistribution |
| US4683147A (en) | 1984-04-16 | 1987-07-28 | Canon Kabushiki Kaisha | Method of forming deposition film |
| US4657777A (en) | 1984-12-17 | 1987-04-14 | Canon Kabushiki Kaisha | Formation of deposited film |
| US4695331A (en) | 1985-05-06 | 1987-09-22 | Chronar Corporation | Hetero-augmentation of semiconductor materials |
| US4910153A (en) | 1986-02-18 | 1990-03-20 | Solarex Corporation | Deposition feedstock and dopant materials useful in the fabrication of hydrogenated amorphous silicon alloys for photovoltaic devices and other semiconductor devices |
| DE3711444A1 (de) | 1987-04-04 | 1988-10-13 | Huels Troisdorf | Verfahren und vorrichtung zur herstellung von dichlorsilan |
| US4841083A (en) | 1987-06-03 | 1989-06-20 | Mitsui Toatsu Chemicals, Incorporated | Ladder polysilanes |
| US4827009A (en) | 1987-09-03 | 1989-05-02 | North Dakota State University | Hydrosilation process |
| EP0902030B1 (en) * | 1997-08-27 | 2002-10-02 | Dow Corning Corporation | Compounds containing tetradecachlorocyclohexasilane dianion |
| CN1223011C (zh) | 1999-03-30 | 2005-10-12 | 精工爱普生株式会社 | 太阳能电池的制造方法 |
| US6767775B1 (en) | 1999-03-30 | 2004-07-27 | Seiko Epson Corporation | Method of manufacturing thin-film transistor |
| TW539709B (en) | 1999-03-30 | 2003-07-01 | Jsr Corp | Coating composition |
| KR100436319B1 (ko) | 1999-03-30 | 2004-06-18 | 제이에스알 가부시끼가이샤 | 실리콘 막의 형성방법 |
| DE60038931D1 (de) | 1999-03-30 | 2008-07-03 | Seiko Epson Corp | Verfahren zur Herstellung einer Siliziumschicht und Tintenstrahlzusammensetzung für Tintenstrahldrucker |
| DE60128611T2 (de) | 2000-03-13 | 2008-01-31 | Jsr Corp. | Cyclosilan, eine flüssige Zusammensetzung und ein Verfahren zur Bildung eines Silicium-Films |
| JP3745959B2 (ja) | 2000-12-28 | 2006-02-15 | セイコーエプソン株式会社 | シリコン薄膜パターンの形成方法 |
| WO2002080244A2 (en) | 2001-02-12 | 2002-10-10 | Asm America, Inc. | Improved process for deposition of semiconductor films |
| KR100627203B1 (ko) | 2001-08-14 | 2006-09-22 | 제이에스알 가부시끼가이샤 | 실란 조성물, 실리콘막의 형성법 및 태양 전지의 제조법 |
| JP2003313299A (ja) | 2002-04-22 | 2003-11-06 | Seiko Epson Corp | 高次シラン組成物及び該組成物を用いたシリコン膜の形成方法 |
| AU2003262236A1 (en) | 2002-08-23 | 2004-03-11 | Jsr Corporation | Composition for forming silicon film and method for forming silicon film |
| JP4042685B2 (ja) | 2003-03-26 | 2008-02-06 | セイコーエプソン株式会社 | トランジスタの製造方法 |
| US7879696B2 (en) | 2003-07-08 | 2011-02-01 | Kovio, Inc. | Compositions and methods for forming a semiconducting and/or silicon-containing film, and structures formed therefrom |
| US7498015B1 (en) | 2004-02-27 | 2009-03-03 | Kovio, Inc. | Method of making silane compositions |
| US7531588B2 (en) * | 2004-07-30 | 2009-05-12 | Momentive Performance Materials Inc. | Silane compositions, processes for their preparation and rubber compositions containing same |
| US7314513B1 (en) | 2004-09-24 | 2008-01-01 | Kovio, Inc. | Methods of forming a doped semiconductor thin film, doped semiconductor thin film structures, doped silane compositions, and methods of making such compositions |
| US7674926B1 (en) | 2004-10-01 | 2010-03-09 | Kovio, Inc. | Dopant group-substituted semiconductor precursor compounds, compositions containing the same, and methods of making such compounds and compositions |
| US7485691B1 (en) | 2004-10-08 | 2009-02-03 | Kovio, Inc | Polysilane compositions, methods for their synthesis and films formed therefrom |
| US7943721B2 (en) | 2005-10-05 | 2011-05-17 | Kovio, Inc. | Linear and cross-linked high molecular weight polysilanes, polygermanes, and copolymers thereof, compositions containing the same, and methods of making and using such compounds and compositions |
| EP2528864B1 (en) | 2010-01-28 | 2017-03-29 | Ndsu Research Foundation | Method of producing cyclohexasilane compounds |
-
2011
- 2011-01-25 EP EP11737505.5A patent/EP2528864B1/en not_active Not-in-force
- 2011-01-25 US US13/522,289 patent/US8975429B2/en not_active Expired - Fee Related
- 2011-01-25 CN CN201180007314.9A patent/CN102762497B/zh not_active Expired - Fee Related
- 2011-01-25 WO PCT/US2011/022360 patent/WO2011094191A1/en not_active Ceased
- 2011-01-25 KR KR1020127021848A patent/KR101818272B1/ko not_active Expired - Fee Related
- 2011-01-25 JP JP2012551225A patent/JP5697692B2/ja not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5942637A (en) * | 1998-03-30 | 1999-08-24 | North Dakota State University Research Foundation | Compounds containing tetradecachlorocyclohexasilane dianion |
| CN101023088A (zh) * | 2004-07-30 | 2007-08-22 | 通用电气公司 | 硅烷组合物、其制备方法和含有该硅烷组合物的橡胶组合物 |
Also Published As
| Publication number | Publication date |
|---|---|
| JP5697692B2 (ja) | 2015-04-08 |
| JP2013518109A (ja) | 2013-05-20 |
| EP2528864A4 (en) | 2015-12-30 |
| US8975429B2 (en) | 2015-03-10 |
| EP2528864B1 (en) | 2017-03-29 |
| US20120294791A1 (en) | 2012-11-22 |
| WO2011094191A1 (en) | 2011-08-04 |
| KR101818272B1 (ko) | 2018-02-21 |
| CN102762497A (zh) | 2012-10-31 |
| KR20130010111A (ko) | 2013-01-25 |
| EP2528864A1 (en) | 2012-12-05 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20151125 Termination date: 20190125 |