DE60038931D1 - Verfahren zur Herstellung einer Siliziumschicht und Tintenstrahlzusammensetzung für Tintenstrahldrucker - Google Patents
Verfahren zur Herstellung einer Siliziumschicht und Tintenstrahlzusammensetzung für TintenstrahldruckerInfo
- Publication number
- DE60038931D1 DE60038931D1 DE60038931T DE60038931T DE60038931D1 DE 60038931 D1 DE60038931 D1 DE 60038931D1 DE 60038931 T DE60038931 T DE 60038931T DE 60038931 T DE60038931 T DE 60038931T DE 60038931 D1 DE60038931 D1 DE 60038931D1
- Authority
- DE
- Germany
- Prior art keywords
- ink jet
- producing
- silicon layer
- composition
- printers
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title 1
- 229910052710 silicon Inorganic materials 0.000 title 1
- 239000010703 silicon Substances 0.000 title 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
- C23C18/06—Coating on selected surface areas, e.g. using masks
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/60—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule in which all the silicon atoms are connected by linkages other than oxygen atoms
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D183/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
- C09D183/16—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers in which all the silicon atoms are connected by linkages other than oxygen atoms
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
- C23C18/08—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of metallic material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/0242—Crystalline insulating materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/0257—Doping during depositing
- H01L21/02573—Conductivity type
- H01L21/02576—N-type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/0257—Doping during depositing
- H01L21/02573—Conductivity type
- H01L21/02579—P-type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02623—Liquid deposition
- H01L21/02628—Liquid deposition using solutions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
- H01L29/6675—Amorphous silicon or polysilicon transistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
- H10K71/13—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing
- H10K71/135—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing using ink-jet printing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P20/00—Technologies relating to chemical industry
- Y02P20/50—Improvements relating to the production of bulk chemicals
- Y02P20/582—Recycling of unreacted starting or intermediate materials
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9031199 | 1999-03-30 | ||
PCT/JP2000/001987 WO2000059014A1 (en) | 1999-03-30 | 2000-03-29 | Method for forming a silicon film and ink composition for ink jet |
Publications (1)
Publication Number | Publication Date |
---|---|
DE60038931D1 true DE60038931D1 (de) | 2008-07-03 |
Family
ID=13994997
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE60038931T Expired - Lifetime DE60038931D1 (de) | 1999-03-30 | 2000-03-29 | Verfahren zur Herstellung einer Siliziumschicht und Tintenstrahlzusammensetzung für Tintenstrahldrucker |
Country Status (7)
Country | Link |
---|---|
EP (1) | EP1087428B1 (de) |
JP (1) | JP3872294B2 (de) |
KR (1) | KR100420441B1 (de) |
CN (1) | CN1294626C (de) |
DE (1) | DE60038931D1 (de) |
TW (1) | TW457554B (de) |
WO (1) | WO2000059014A1 (de) |
Families Citing this family (42)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2000058409A1 (fr) * | 1999-03-30 | 2000-10-05 | Jsr Corporation | Composition pour revetement |
KR100562815B1 (ko) * | 2000-03-13 | 2006-03-23 | 제이에스알 가부시끼가이샤 | 실리콘막 형성용 용액 조성물 및 실리콘막의 형성 방법 |
JP4748288B2 (ja) * | 2000-06-01 | 2011-08-17 | Jsr株式会社 | スピロ[4.4]ノナシランを含有する組成物 |
US7118943B2 (en) * | 2002-04-22 | 2006-10-10 | Seiko Epson Corporation | Production method of a thin film device, production method of a transistor, electro-optical apparatus and electronic equipment |
KR101115291B1 (ko) | 2003-04-25 | 2012-03-05 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 액적 토출 장치, 패턴의 형성 방법, 및 반도체 장치의 제조 방법 |
US7879696B2 (en) | 2003-07-08 | 2011-02-01 | Kovio, Inc. | Compositions and methods for forming a semiconducting and/or silicon-containing film, and structures formed therefrom |
JP4636236B2 (ja) * | 2003-10-16 | 2011-02-23 | Jsr株式会社 | シリコン・コバルト膜形成用組成物およびシリコン・コバルト膜の形成方法 |
CN100533808C (zh) | 2004-01-26 | 2009-08-26 | 株式会社半导体能源研究所 | 显示器件及其制造方法以及电视设备 |
US7498015B1 (en) | 2004-02-27 | 2009-03-03 | Kovio, Inc. | Method of making silane compositions |
US7462514B2 (en) | 2004-03-03 | 2008-12-09 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same, liquid crystal television, and EL television |
US7642038B2 (en) | 2004-03-24 | 2010-01-05 | Semiconductor Energy Laboratory Co., Ltd. | Method for forming pattern, thin film transistor, display device, method for manufacturing thereof, and television apparatus |
US7531294B2 (en) | 2004-03-25 | 2009-05-12 | Semiconductor Energy Laboratory Co., Ltd. | Method for forming film pattern, method for manufacturing semiconductor device, liquid crystal television, and EL television |
US7494923B2 (en) | 2004-06-14 | 2009-02-24 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of wiring substrate and semiconductor device |
US8158517B2 (en) | 2004-06-28 | 2012-04-17 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing wiring substrate, thin film transistor, display device and television device |
JP2008504676A (ja) * | 2004-06-28 | 2008-02-14 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | 湿式化学析出法によって製造された電界効果トランジスタ |
US7485691B1 (en) | 2004-10-08 | 2009-02-03 | Kovio, Inc | Polysilane compositions, methods for their synthesis and films formed therefrom |
US7687327B2 (en) | 2005-07-08 | 2010-03-30 | Kovio, Inc, | Methods for manufacturing RFID tags and structures formed therefrom |
WO2007044429A2 (en) | 2005-10-05 | 2007-04-19 | Nanogram Corporation | Linear and cross-linked high molecular weight polysilanes, polygermanes, and copolymers thereof, compositions containing the same, and methods of making and using such compounds and compositions |
US7709307B2 (en) | 2006-08-24 | 2010-05-04 | Kovio, Inc. | Printed non-volatile memory |
DE102006043929B4 (de) | 2006-09-14 | 2016-10-06 | Spawnt Private S.À.R.L. | Verfahren zur Herstellung von festen Polysilanmischungen |
US8092867B2 (en) | 2006-10-06 | 2012-01-10 | Kovio, Inc. | Silicon polymers, methods of polymerizing silicon compounds, and methods of forming thin films from such silicon polymers |
US8530589B2 (en) | 2007-05-04 | 2013-09-10 | Kovio, Inc. | Print processing for patterned conductor, semiconductor and dielectric materials |
SG2012070850A (en) | 2007-10-01 | 2014-04-28 | Kovio Inc | Profile engineered thin film devices and structures |
CA2702324C (en) | 2007-10-10 | 2017-04-11 | Kovio, Inc. | High reliability surveillance and/or identification tag/devices and methods of making and using the same |
US8460983B1 (en) | 2008-01-21 | 2013-06-11 | Kovio, Inc. | Method for modifying and controlling the threshold voltage of thin film transistors |
JP2008143782A (ja) * | 2008-02-08 | 2008-06-26 | Jsr Corp | 太陽電池の製造方法 |
JP5519649B2 (ja) | 2008-05-29 | 2014-06-11 | エヌディーエスユー リサーチ ファウンデーション | 官能化されたシランの形成法 |
DE102008043422B3 (de) * | 2008-11-03 | 2010-01-07 | Evonik Degussa Gmbh | Verfahren zur Aufreinigung niedermolekularer Hydridosilane |
DE102009048087A1 (de) | 2009-10-02 | 2011-04-07 | Evonik Degussa Gmbh | Verfahren zur Herstellung höherer Hydridosilane |
DE102009053806A1 (de) | 2009-11-18 | 2011-05-19 | Evonik Degussa Gmbh | Verfahren zur Herstellung von Siliciumschichten |
KR101818272B1 (ko) | 2010-01-28 | 2018-02-21 | 엔디에스유 리서치 파운데이션 | 시클로헥사실란 화합물의 제조 방법 |
NL2007372C2 (en) | 2011-09-08 | 2013-03-11 | Univ Delft Tech | A process for the manufacture of a semiconductor device. |
NL2010199C2 (en) | 2013-01-29 | 2014-08-04 | Univ Delft Tech | Manufacturing a submicron structure using a liquid precursor. |
NL2010713C2 (en) | 2013-04-26 | 2014-10-29 | Univ Delft Tech | Method of forming silicon on a substrate. |
DE102013010101A1 (de) | 2013-06-18 | 2014-12-18 | Evonik Industries Ag | Formulierungen umfassend Hydridosilane und Hydridosilan-Oligomere, Verfahren zu ihrer Herstellung und ihrer Verwendung |
DE102013010099B4 (de) * | 2013-06-18 | 2015-07-09 | Evonik Industries Ag | Verfahren zur Herstellung strukturierter Beschichtungen, mit dem Verfahren hergestellte strukturierte Beschichtungen und ihre Verwendung |
DE102013010102A1 (de) | 2013-06-18 | 2014-12-18 | Evonik Industries Ag | Formulierungen umfassend Hydridosilane und Hydridosilan-Oligomere, Verfahren zu ihrer Herstellung und ihrer Verwendung |
US8999742B1 (en) * | 2013-12-10 | 2015-04-07 | Nthdegree Technologies Worldwide Inc. | Silicon microsphere fabrication |
DE102013020518A1 (de) | 2013-12-11 | 2015-06-11 | Forschungszentrum Jülich GmbH Fachbereich Patente | Verfahren und Vorrichtung zur Polymerisation einer Zusammensetzung enthaltend Hydridosilane und anschließenden Verwendung der Polymerisate zur Herstellung von siliziumhaltigen Schichten |
NL2013288B1 (en) | 2014-07-31 | 2016-09-21 | Univ Delft Tech | Low-temperature formation of silicon and silicon oxide structures. |
GB2528908A (en) * | 2014-08-04 | 2016-02-10 | Isis Innovation | Thin film semiconductor |
WO2016068713A1 (en) | 2014-10-30 | 2016-05-06 | Technische Universiteit Delft | Low-temperature formation of thin-film structures |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4728528A (en) * | 1985-02-18 | 1988-03-01 | Canon Kabushiki Kaisha | Process for forming deposited film |
US4695331A (en) * | 1985-05-06 | 1987-09-22 | Chronar Corporation | Hetero-augmentation of semiconductor materials |
JPS63111454A (ja) * | 1986-10-29 | 1988-05-16 | Nec Corp | 固定化酵素膜の製造方法 |
JPH03102324A (ja) * | 1989-09-18 | 1991-04-26 | Sanyo Electric Co Ltd | 薄膜トランジスタの製造方法 |
JP3153219B2 (ja) * | 1990-01-22 | 2001-04-03 | 株式会社日立製作所 | 半導体装置並びに絶縁膜形成方法及びその装置 |
JPH05144741A (ja) * | 1991-11-21 | 1993-06-11 | Showa Denko Kk | アモルフアスシリコン膜の形成方法 |
JPH06191821A (ja) * | 1992-12-22 | 1994-07-12 | Showa Denko Kk | シリコン膜形成用の高次シラン含有溶液 |
JP3517934B2 (ja) * | 1994-03-24 | 2004-04-12 | 昭和電工株式会社 | シリコン膜の形成方法 |
JP3025408B2 (ja) * | 1994-06-20 | 2000-03-27 | シャープ株式会社 | 半導体素子の製造方法 |
US5866471A (en) * | 1995-12-26 | 1999-02-02 | Kabushiki Kaisha Toshiba | Method of forming semiconductor thin film and method of fabricating solar cell |
US5989945A (en) * | 1996-05-15 | 1999-11-23 | Seiko Epson Corporation | Thin film device provided with coating film, liquid crystal panel and electronic device, and method for making the thin film device |
JP3408399B2 (ja) * | 1997-05-23 | 2003-05-19 | シャープ株式会社 | シリコン膜の形成方法 |
JPH1179727A (ja) * | 1997-08-29 | 1999-03-23 | Sharp Corp | シリコン膜の形成方法 |
-
2000
- 2000-03-29 WO PCT/JP2000/001987 patent/WO2000059014A1/ja active IP Right Grant
- 2000-03-29 KR KR10-2000-7013524A patent/KR100420441B1/ko not_active IP Right Cessation
- 2000-03-29 DE DE60038931T patent/DE60038931D1/de not_active Expired - Lifetime
- 2000-03-29 EP EP00912945A patent/EP1087428B1/de not_active Expired - Lifetime
- 2000-03-29 JP JP2000608423A patent/JP3872294B2/ja not_active Expired - Fee Related
- 2000-03-29 CN CNB008004382A patent/CN1294626C/zh not_active Expired - Fee Related
- 2000-03-29 TW TW089105850A patent/TW457554B/zh not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
CN1297576A (zh) | 2001-05-30 |
EP1087428B1 (de) | 2008-05-21 |
KR20010043948A (ko) | 2001-05-25 |
EP1087428A1 (de) | 2001-03-28 |
JP3872294B2 (ja) | 2007-01-24 |
EP1087428A4 (de) | 2005-07-27 |
WO2000059014A1 (en) | 2000-10-05 |
TW457554B (en) | 2001-10-01 |
CN1294626C (zh) | 2007-01-10 |
KR100420441B1 (ko) | 2004-03-04 |
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