JP2008143782A - 太陽電池の製造方法 - Google Patents
太陽電池の製造方法 Download PDFInfo
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- JP2008143782A JP2008143782A JP2008028407A JP2008028407A JP2008143782A JP 2008143782 A JP2008143782 A JP 2008143782A JP 2008028407 A JP2008028407 A JP 2008028407A JP 2008028407 A JP2008028407 A JP 2008028407A JP 2008143782 A JP2008143782 A JP 2008143782A
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- Prior art keywords
- thin film
- semiconductor thin
- film
- solar cell
- compound
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- 238000000034 method Methods 0.000 title claims abstract description 58
- 238000004519 manufacturing process Methods 0.000 title claims description 17
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- 239000004065 semiconductor Substances 0.000 claims abstract description 53
- -1 silane compound Chemical class 0.000 claims abstract description 48
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- 239000012535 impurity Substances 0.000 claims abstract description 7
- GCOJIFYUTTYXOF-UHFFFAOYSA-N hexasilinane Chemical compound [SiH2]1[SiH2][SiH2][SiH2][SiH2][SiH2]1 GCOJIFYUTTYXOF-UHFFFAOYSA-N 0.000 claims abstract description 6
- DOBUHXUCKMAKSP-UHFFFAOYSA-N pentasilolanylsilane Chemical compound [SiH3][SiH]1[SiH2][SiH2][SiH2][SiH2]1 DOBUHXUCKMAKSP-UHFFFAOYSA-N 0.000 claims abstract description 6
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- 229910052746 lanthanum Inorganic materials 0.000 description 1
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 1
- 239000005355 lead glass Substances 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 229920002521 macromolecule Polymers 0.000 description 1
- 239000002923 metal particle Substances 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- JXTPJDDICSTXJX-UHFFFAOYSA-N n-Triacontane Natural products CCCCCCCCCCCCCCCCCCCCCCCCCCCCCC JXTPJDDICSTXJX-UHFFFAOYSA-N 0.000 description 1
- 125000004108 n-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 125000003136 n-heptyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 125000001280 n-hexyl group Chemical group C(CCCCC)* 0.000 description 1
- 125000000740 n-pentyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 125000004123 n-propyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 125000001971 neopentyl group Chemical group [H]C([*])([H])C(C([H])([H])[H])(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- JFNLZVQOOSMTJK-KNVOCYPGSA-N norbornene Chemical compound C1[C@@H]2CC[C@H]1C=C2 JFNLZVQOOSMTJK-KNVOCYPGSA-N 0.000 description 1
- 238000007645 offset printing Methods 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- JOCPVPDNXPWNLK-UHFFFAOYSA-N oxane;oxolane Chemical compound C1CCOC1.C1CCOCC1 JOCPVPDNXPWNLK-UHFFFAOYSA-N 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 125000005429 oxyalkyl group Chemical group 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 125000005010 perfluoroalkyl group Chemical group 0.000 description 1
- 150000003018 phosphorus compounds Chemical class 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 239000002798 polar solvent Substances 0.000 description 1
- 229920000233 poly(alkylene oxides) Polymers 0.000 description 1
- 238000012643 polycondensation polymerization Methods 0.000 description 1
- 238000006068 polycondensation reaction Methods 0.000 description 1
- 229920006393 polyether sulfone Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 239000000256 polyoxyethylene sorbitan monolaurate Substances 0.000 description 1
- 235000010486 polyoxyethylene sorbitan monolaurate Nutrition 0.000 description 1
- 229920001709 polysilazane Polymers 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- RUOJZAUFBMNUDX-UHFFFAOYSA-N propylene carbonate Chemical compound CC1COC(=O)O1 RUOJZAUFBMNUDX-UHFFFAOYSA-N 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000007142 ring opening reaction Methods 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 125000002914 sec-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 1
- 150000003377 silicon compounds Chemical class 0.000 description 1
- 239000011856 silicon-based particle Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229940032094 squalane Drugs 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 229910019655 synthetic inorganic crystalline material Inorganic materials 0.000 description 1
- CXWXQJXEFPUFDZ-UHFFFAOYSA-N tetralin Chemical compound C1=CC=C2CCCCC2=C1 CXWXQJXEFPUFDZ-UHFFFAOYSA-N 0.000 description 1
- 230000008719 thickening Effects 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
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Abstract
【解決手段】上記課題は、一対の電極の間に、不純物の濃度および/または種類の異なる半導体薄膜を少なくとも二層以上積層した構造を有する太陽電池の製造において、該半導体薄膜のうちの少なくとも一層が、(A)式SinRmで表されるポリシラン化合物 並びに(B)シクロペンタシラン、シクロヘキサシランおよびシリルシクロペンタシランよりなる群から選ばれる少なくとも1種のシラン化合物を含有することを特徴とするシラン組成物を基板上に塗布して塗膜を形成する工程と、該塗膜を熱処理および/または光処理する工程を含む形成方法により形成されていることを特徴とする、太陽電池の製造方法により達成される。
【選択図】なし
Description
合成例1
温度計、冷却コンデンサー、滴下ロートおよび攪拌装置を取り付けた内容量が3Lの4つ口フラスコ内をアルゴンガスで置換した後、乾燥したテトラヒドロフラン1Lとリチウム金属18.3gを仕込み、アルゴンガスでバブリングした。この懸濁液を0℃で攪拌しながらジフェニルジクロロシラン333gを滴下ロートより添加し、滴下終了後、室温下でリチウム金属が完全に消失するまでさらに12時間攪拌を続けた。反応混合物を5Lの氷水に注ぎ、反応生成物を沈殿させた。この沈殿物を濾別し、水で良く洗浄した後シクロヘキサンで洗浄し、真空乾燥することにより白色固体140gを得た。この白色固体100gと乾燥したシクロヘキサン1000mLを2Lのフラスコに仕込み、塩化アルミニウム4gを加え、攪拌しながら室温下で乾燥した塩化水素ガスを8時間バブリングした。ここで別途に、水素化リチウムアルミニウム40gとジエチルエーテル400mLを3Lのフラスコに仕込み、アルゴン雰囲気下、0℃で攪拌しながら上記反応混合物を加え、同温にて1時間撹拌後さらに室温で12時間撹拌を続けた。反応混合物より副生物を除去した後、70℃、10mmHgで減圧蒸留を行ったところ、無色の液体が10g得られた。このものはIR、1H−NMR、29Si−NMR、GC−MSの各スペクトルより、シクロペンタシランであることが判った。
アルゴン雰囲気下、合成例1で得られたシクロペンタシラン10gを100mLのフラスコに加え、攪拌しながら500Wの高圧水銀灯を30分間照射したところ、白色固体が得られた。ここで得られた白色固体はトルエン、シクロヘキサンには不溶であった。このものに、合成例1で得られたシクロペンタシランを100g加えたところ、無色透明の溶液が得られた。
温度計、コンデンサー、滴下ロート、および攪拌装置を取り付けた内容量が1Lの4つ口フラスコ内をアルゴンガスで置換した後、乾燥したテトラヒドロフラン500mLとリチウム金属9gを仕込み、アルゴンガスでバブリングした。この懸濁液を室温下で攪拌しながらジフェニルジクロルシラン126gと三臭化ホウ素25gの混合物を滴下ロートより添加した。リチウム金属が完全に消失するまで反応を続けた後、反応混合物を氷水に注ぎ反応生成物を沈澱させた。この沈澱物を濾別し、水で良く洗滌した後、乾燥することによりフェニル基とホウ素を含有するケイ素化合物90gを得た。この化合物90gをトルエン500mLに溶解させ塩化アルミニウム4gを加えて、攪拌しながら氷冷下で乾燥した塩化水素ガスを8時間バブリングした。ここで別途に、水素化リチウムアルミニウム12gとジエチルエーテル250mLを2Lのフラスコに仕込み、アルゴン雰囲気下、0℃で攪拌しながら上記反応混合物を加え、同温にて1時間撹拌後さらに室温で12時間撹拌を続けた。アルミニウム化合物を除去した後、濃縮し精製することにより目的のホウ素を含有する変性シラン化合物10gを得た。このものは元素分析の結果、Si5H11Bであることがわかった。
上記合成例3において、三臭化ホウ素25gの代わりに三臭化リン27gを使用した他は合成例3と同様に実施して、リンを含有する変性シラン化合物を得た。このものは元素分析の結果、Si5H11Pであることがわかった。
透明導電膜ITOが成膜された石英基板上に、以下のような方法で図1に模式的に示すような構造の太陽電池を作成した。まず、ITO膜上にp型のシリコン膜を形成するために、合成例3で得られたSi5H11Bを1g、および合成例2で調製した溶液50gを混合して塗布溶液を調製した。この溶液をアルゴン雰囲気中で前記の基板上にスピンコートし150で10分間乾燥した後、アルゴン雰囲気中、450℃で30分間熱分解を行って、膜厚200nmのアモルファスシリコン膜を形成した。次に、i型のシリコン膜を積層するために、合成例2の溶液をアルゴン雰囲気下で上記シリコン膜を形成した基板上にスピンコートし150℃で10分間乾燥した後、アルゴン雰囲気中、450℃で30分間熱分解を行って、膜厚1000nmのi型のアモルファスシリコン膜を形成した。さらに、n型のシリコン膜を積層するために、合成例4で得られたSi5H11Pを1g、および合成例2で調製した溶液50gを混合して塗布溶液を調製した。この溶液をアルゴン雰囲気中で上記シリコン膜を積層した基板上にスピンコートし150℃で10分間乾燥した後、アルゴン雰囲気中、450℃で30分間熱分解を行って、膜厚200nmのn型のアモルファスシリコン膜を形成した。以上のように形成されたpin接続構造の積層膜の上から、マスクを用いて積層膜の一部分にアルミニウム膜を0.5μm蒸着した後、アルミニウム膜のない部分を下部のITO膜が露出するまでエッチングし、図1で示すような構造の太陽電池を製造した。この太陽電池の光起電力を測定して変換効率をもとめたところ、6.0%であった。
実施例1において、p、i、n型の各アモルファスシリコン膜を形成する工程それぞれにおいて、シラン組成物の塗布および熱分解工程を3回繰り返し、また、アモルファスシリコン膜の形成後に波長308nmのエキシマレーザーをエネルギー密度320mJ/cm2で10分間照射して多結晶シリコン膜に変換する工程を付け加えた他は実施例1と同様に実施し、3層が多結晶シリコン薄膜であり、各層の膜厚がそれぞれ600nm、3,000nmおよび600nmである、図1で示す構造の太陽電池を製造した。この太陽電池の光起電力を測定して変換効率をもとめたところ、12%であった。
2;ITO膜
3;p型シリコン膜
4;i型シリコン膜
5;n型シリコン膜
6;アルミニウム膜
7;プローブ電極
Claims (5)
- 一対の電極の間に、不純物の濃度および/または種類の異なる半導体薄膜を少なくとも二層以上積層した構造を有する太陽電池の製造において、該半導体薄膜のうちの少なくとも一層が、
式SiiH2i+2(ここでiは2〜8の整数である。)で表される水素化鎖状シラン化合物、式SijH2j(ここでjは3〜10の整数である。)で表される水素化環状シラン化合物、および式SikHk(ここでkは6〜10の整数である。)で表される水素化かご状シラン化合物から選ばれる少なくとも一種のシラン化合物に光照射して合成されたポリシラン化合物、並びに(B)シクロペンタシラン、シクロヘキサシランおよびシリルシクロペンタシランよりなる群から選ばれる少なくとも1種のシラン化合物を含有することを特徴とするシラン組成物を基板上に塗布して塗膜を形成する工程と、該塗膜を熱処理および/または光処理する工程を含む形成方法により形成されていることを特徴とする、太陽電池の製造方法。 - 形成される半導体薄膜がi型のシリコン薄膜であることを特徴とする、請求項1に記載の太陽電池の製造方法。
- 半導体薄膜のうちの少なくとも一層が、さらに、ホウ素、ヒ素、リンおよびアンチモンから選ばれる少なくとも一種の原子をドープする工程を含む形成方法により形成されたp型またはn型のシリコン薄膜であることを特徴とする請求項1に記載の太陽電池の製造方法。
- 形成される半導体薄膜がアモルファスシリコン薄膜であることを特徴とする、請求項1〜3のいずれか一項に記載の太陽電池の製造方法。
- 形成される半導体薄膜が多結晶シリコン薄膜であることを特徴とする、請求項1〜3のいずれか一項に記載の太陽電池の製造方法。
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JPH07267621A (ja) * | 1994-03-24 | 1995-10-17 | Showa Denko Kk | シリコン膜の形成方法 |
JP2000031066A (ja) * | 1998-07-10 | 2000-01-28 | Sharp Corp | シリコン膜の形成方法及び太陽電池の製造方法 |
WO2000059044A1 (en) * | 1999-03-30 | 2000-10-05 | Seiko Epson Corporation | Method of manufacturing solar cell |
WO2000058409A1 (fr) * | 1999-03-30 | 2000-10-05 | Jsr Corporation | Composition pour revetement |
WO2000059014A1 (en) * | 1999-03-30 | 2000-10-05 | Seiko Epson Corporation | Method for forming a silicon film and ink composition for ink jet |
WO2000059022A1 (fr) * | 1999-03-30 | 2000-10-05 | Jsr Corporation | Procede de formation de films d'oxyde de silicium |
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