KR101817115B1 - 신호 처리 회로 - Google Patents

신호 처리 회로 Download PDF

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Publication number
KR101817115B1
KR101817115B1 KR1020137026825A KR20137026825A KR101817115B1 KR 101817115 B1 KR101817115 B1 KR 101817115B1 KR 1020137026825 A KR1020137026825 A KR 1020137026825A KR 20137026825 A KR20137026825 A KR 20137026825A KR 101817115 B1 KR101817115 B1 KR 101817115B1
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South Korea
Prior art keywords
circuit
memory circuit
transistor
nonvolatile memory
oxide semiconductor
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Expired - Fee Related
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KR1020137026825A
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English (en)
Korean (ko)
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KR20140012722A (ko
Inventor
히데토모 고바야시
유키오 마에하시
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가부시키가이샤 한도오따이 에네루기 켄큐쇼
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Publication of KR20140012722A publication Critical patent/KR20140012722A/ko
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/4074—Power supply or voltage generation circuits, e.g. bias voltage generators, substrate voltage generators, back-up power, power control circuits
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F15/00—Digital computers in general; Data processing equipment in general
    • G06F15/76—Architectures of general purpose stored program computers
    • G06F15/78—Architectures of general purpose stored program computers comprising a single central processing unit
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1006—Data managing, e.g. manipulating data before writing or reading out, data bus switches or control circuits therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2207/00—Indexing scheme relating to arrangements for writing information into, or reading information out from, a digital store
    • G11C2207/22—Control and timing of internal memory operations
    • G11C2207/2227—Standby or low power modes

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Theoretical Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Semiconductor Memories (AREA)
  • Thin Film Transistor (AREA)
  • Dram (AREA)
  • Non-Volatile Memory (AREA)
  • Static Random-Access Memory (AREA)
KR1020137026825A 2011-03-24 2012-03-12 신호 처리 회로 Expired - Fee Related KR101817115B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JPJP-P-2011-065210 2011-03-24
JP2011065210 2011-03-24
JPJP-P-2011-108886 2011-05-14
JP2011108886 2011-05-14
PCT/JP2012/056801 WO2012128189A1 (en) 2011-03-24 2012-03-12 Signal processing circuit

Publications (2)

Publication Number Publication Date
KR20140012722A KR20140012722A (ko) 2014-02-03
KR101817115B1 true KR101817115B1 (ko) 2018-01-11

Family

ID=46877254

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020137026825A Expired - Fee Related KR101817115B1 (ko) 2011-03-24 2012-03-12 신호 처리 회로

Country Status (7)

Country Link
US (2) US8724407B2 (enExample)
JP (1) JP5839474B2 (enExample)
KR (1) KR101817115B1 (enExample)
CN (1) CN103430299B (enExample)
DE (2) DE112012001395B4 (enExample)
TW (1) TWI540445B (enExample)
WO (1) WO2012128189A1 (enExample)

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JP5839474B2 (ja) * 2011-03-24 2016-01-06 株式会社半導体エネルギー研究所 信号処理回路
JP5879165B2 (ja) * 2011-03-30 2016-03-08 株式会社半導体エネルギー研究所 半導体装置
US8854867B2 (en) 2011-04-13 2014-10-07 Semiconductor Energy Laboratory Co., Ltd. Memory device and driving method of the memory device
JP5886127B2 (ja) 2011-05-13 2016-03-16 株式会社半導体エネルギー研究所 半導体装置
KR102081792B1 (ko) 2011-05-19 2020-02-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 연산회로 및 연산회로의 구동방법
US9336845B2 (en) 2011-05-20 2016-05-10 Semiconductor Energy Laboratory Co., Ltd. Register circuit including a volatile memory and a nonvolatile memory
US9287370B2 (en) 2012-03-02 2016-03-15 Semiconductor Energy Laboratory Co., Ltd. Memory device comprising a transistor including an oxide semiconductor and semiconductor device including the same
US9087573B2 (en) 2012-03-13 2015-07-21 Semiconductor Energy Laboratory Co., Ltd. Memory device and driving method thereof
KR102108248B1 (ko) 2012-03-14 2020-05-07 가부시키가이샤 한도오따이 에네루기 켄큐쇼 산화물 반도체막, 트랜지스터, 및 반도체 장치
US9261943B2 (en) * 2012-05-02 2016-02-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method thereof
US9104395B2 (en) * 2012-05-02 2015-08-11 Semiconductor Energy Laboratory Co., Ltd. Processor and driving method thereof
JP6050721B2 (ja) * 2012-05-25 2016-12-21 株式会社半導体エネルギー研究所 半導体装置
JP6130175B2 (ja) * 2013-03-15 2017-05-17 株式会社半導体エネルギー研究所 半導体装置
KR102529174B1 (ko) * 2013-12-27 2023-05-08 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
US9653611B2 (en) 2014-03-07 2017-05-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP6545976B2 (ja) * 2014-03-07 2019-07-17 株式会社半導体エネルギー研究所 半導体装置
SG11201606647PA (en) * 2014-03-14 2016-09-29 Semiconductor Energy Lab Co Ltd Circuit system
JP6580863B2 (ja) 2014-05-22 2019-09-25 株式会社半導体エネルギー研究所 半導体装置、健康管理システム
US9824024B1 (en) * 2014-10-31 2017-11-21 Altera Corporation Configurable storage blocks with embedded first-in first-out and delay line circuitry
CN112768511A (zh) * 2015-02-06 2021-05-07 株式会社半导体能源研究所 半导体装置及其制造方法
CN106229346A (zh) * 2016-08-31 2016-12-14 深圳市华星光电技术有限公司 一种氧化物半导体薄膜晶体管及其制作方法
JP6645940B2 (ja) * 2016-09-20 2020-02-14 キオクシア株式会社 不揮発性半導体記憶装置
US10490130B2 (en) 2017-02-10 2019-11-26 Semiconductor Energy Laboratory Co., Ltd. Display system comprising controller which process data
US11360768B2 (en) * 2019-08-14 2022-06-14 Micron Technolgy, Inc. Bit string operations in memory
CN112565642B (zh) * 2020-11-27 2023-07-04 上海华力微电子有限公司 一种具有线性对数输出的cis传感器
US11502091B1 (en) * 2021-05-21 2022-11-15 Micron Technology, Inc. Thin film transistor deck selection in a memory device

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