KR101798235B1 - 하드마스크 물질 - Google Patents

하드마스크 물질 Download PDF

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Publication number
KR101798235B1
KR101798235B1 KR1020100123145A KR20100123145A KR101798235B1 KR 101798235 B1 KR101798235 B1 KR 101798235B1 KR 1020100123145 A KR1020100123145 A KR 1020100123145A KR 20100123145 A KR20100123145 A KR 20100123145A KR 101798235 B1 KR101798235 B1 KR 101798235B1
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South Korea
Prior art keywords
film
layer
hard mask
plasma
silicon carbide
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Korean (ko)
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KR20110063386A (ko
Inventor
비쉬와나탄 랑가라잔
조지 앤드류 안토넬리
아난다 배너지
바트 반 슈라벤디지크
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노벨러스 시스템즈, 인코포레이티드
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Priority claimed from US12/631,709 external-priority patent/US8178443B2/en
Priority claimed from US12/631,691 external-priority patent/US8247332B2/en
Application filed by 노벨러스 시스템즈, 인코포레이티드 filed Critical 노벨러스 시스템즈, 인코포레이티드
Publication of KR20110063386A publication Critical patent/KR20110063386A/ko
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H10P14/6336—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/081—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts
    • H10W20/084—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts for dual-damascene structures
    • H10W20/087—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts for dual-damascene structures involving multiple stacked pre-patterned masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
    • H10P14/6529—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to a gas or vapour
    • H10P14/6532—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to a gas or vapour by exposure to a plasma
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/6922—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H10P14/6923—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material being boron or phosphorus doped silicon oxides, e.g. BPSG, BSG or PSG
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/081—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts
    • H10W20/084—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts for dual-damascene structures
    • H10W20/088—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts for dual-damascene structures involving partial etching of via holes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/081—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts
    • H10W20/089—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts using processes for implementing desired shapes or dispositions of the openings, e.g. double patterning
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/081—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts

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  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Drying Of Semiconductors (AREA)
KR1020100123145A 2009-12-04 2010-12-06 하드마스크 물질 Active KR101798235B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US12/631,691 2009-12-04
US12/631,709 2009-12-04
US12/631,709 US8178443B2 (en) 2009-12-04 2009-12-04 Hardmask materials
US12/631,691 US8247332B2 (en) 2009-12-04 2009-12-04 Hardmask materials

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020170147917A Division KR101907802B1 (ko) 2009-12-04 2017-11-08 하드마스크 물질

Publications (2)

Publication Number Publication Date
KR20110063386A KR20110063386A (ko) 2011-06-10
KR101798235B1 true KR101798235B1 (ko) 2017-11-15

Family

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KR1020100123145A Active KR101798235B1 (ko) 2009-12-04 2010-12-06 하드마스크 물질
KR1020170147917A Active KR101907802B1 (ko) 2009-12-04 2017-11-08 하드마스크 물질

Family Applications After (1)

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Country Status (4)

Country Link
JP (1) JP5656010B2 (https=)
KR (2) KR101798235B1 (https=)
CN (2) CN102097364B (https=)
TW (2) TWI547997B (https=)

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JP6111106B2 (ja) * 2013-03-19 2017-04-05 株式会社日立国際電気 半導体装置の製造方法、基板処理装置およびプログラム
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KR102020211B1 (ko) * 2017-01-09 2019-11-04 주식회사 테스 탄소 및/또는 보론를 포함하는 비정질 실리콘막의 형성 방법
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Publication number Publication date
JP5656010B2 (ja) 2015-01-21
CN105185707A (zh) 2015-12-23
CN102097364A (zh) 2011-06-15
TWI505364B (zh) 2015-10-21
JP2011139033A (ja) 2011-07-14
TW201543574A (zh) 2015-11-16
TWI547997B (zh) 2016-09-01
CN102097364B (zh) 2015-10-14
KR20170126827A (ko) 2017-11-20
CN105185707B (zh) 2018-06-01
KR101907802B1 (ko) 2018-12-05
KR20110063386A (ko) 2011-06-10
TW201130050A (en) 2011-09-01

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