WO2005064403A1 - ハードマスク用塗布型窒化膜形成組成物 - Google Patents
ハードマスク用塗布型窒化膜形成組成物 Download PDFInfo
- Publication number
- WO2005064403A1 WO2005064403A1 PCT/JP2004/019225 JP2004019225W WO2005064403A1 WO 2005064403 A1 WO2005064403 A1 WO 2005064403A1 JP 2004019225 W JP2004019225 W JP 2004019225W WO 2005064403 A1 WO2005064403 A1 WO 2005064403A1
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- WO
- WIPO (PCT)
- Prior art keywords
- underlayer film
- nitride
- forming
- composition
- photoresist
- Prior art date
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- 150000004767 nitrides Chemical class 0.000 title claims abstract description 48
- 238000000576 coating method Methods 0.000 title description 3
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- 229910052751 metal Inorganic materials 0.000 claims abstract description 42
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 14
- 239000010703 silicon Substances 0.000 claims abstract description 14
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 14
- 239000003960 organic solvent Substances 0.000 claims abstract description 11
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims abstract description 10
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- 229910052719 titanium Inorganic materials 0.000 claims abstract description 10
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- 229910052721 tungsten Inorganic materials 0.000 claims abstract description 9
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- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims abstract description 5
- 229910052733 gallium Inorganic materials 0.000 claims abstract description 5
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- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims abstract description 5
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 claims abstract description 5
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- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims abstract description 5
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- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 4
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- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 4
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- BIXHRBFZLLFBFL-UHFFFAOYSA-N germanium nitride Chemical compound N#[Ge]N([Ge]#N)[Ge]#N BIXHRBFZLLFBFL-UHFFFAOYSA-N 0.000 claims description 3
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- KBLWLMPSVYBVDK-UHFFFAOYSA-N cyclohexyl prop-2-enoate Chemical compound C=CC(=O)OC1CCCCC1 KBLWLMPSVYBVDK-UHFFFAOYSA-N 0.000 description 1
- FWCBQAXNMWDAFK-UHFFFAOYSA-N cyclopropyl(trimethoxy)silane Chemical compound CO[Si](OC)(OC)C1CC1 FWCBQAXNMWDAFK-UHFFFAOYSA-N 0.000 description 1
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- XXJWXESWEXIICW-UHFFFAOYSA-N diethylene glycol monoethyl ether Chemical compound CCOCCOCCO XXJWXESWEXIICW-UHFFFAOYSA-N 0.000 description 1
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- 108091022884 dihydropyrimidinase Proteins 0.000 description 1
- AHUXYBVKTIBBJW-UHFFFAOYSA-N dimethoxy(diphenyl)silane Chemical compound C=1C=CC=CC=1[Si](OC)(OC)C1=CC=CC=C1 AHUXYBVKTIBBJW-UHFFFAOYSA-N 0.000 description 1
- 125000000118 dimethyl group Chemical group [H]C([H])([H])* 0.000 description 1
- FBSAITBEAPNWJG-UHFFFAOYSA-N dimethyl phthalate Natural products CC(=O)OC1=CC=CC=C1OC(C)=O FBSAITBEAPNWJG-UHFFFAOYSA-N 0.000 description 1
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- NTANBCXBRQIGNA-UHFFFAOYSA-N dinonyl 2-hydroxybutanedioate Chemical compound CCCCCCCCCOC(=O)CC(O)C(=O)OCCCCCCCCC NTANBCXBRQIGNA-UHFFFAOYSA-N 0.000 description 1
- USIUVYZYUHIAEV-UHFFFAOYSA-N diphenyl ether Chemical compound C=1C=CC=CC=1OC1=CC=CC=C1 USIUVYZYUHIAEV-UHFFFAOYSA-N 0.000 description 1
- 238000007922 dissolution test Methods 0.000 description 1
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- QYDYPVFESGNLHU-UHFFFAOYSA-N elaidic acid methyl ester Natural products CCCCCCCCC=CCCCCCCCC(=O)OC QYDYPVFESGNLHU-UHFFFAOYSA-N 0.000 description 1
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- DRUOQOFQRYFQGB-UHFFFAOYSA-N ethoxy(dimethyl)silicon Chemical compound CCO[Si](C)C DRUOQOFQRYFQGB-UHFFFAOYSA-N 0.000 description 1
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- 125000005745 ethoxymethyl group Chemical group [H]C([H])([H])C([H])([H])OC([H])([H])* 0.000 description 1
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- ZANNOFHADGWOLI-UHFFFAOYSA-N ethyl 2-hydroxyacetate Chemical compound CCOC(=O)CO ZANNOFHADGWOLI-UHFFFAOYSA-N 0.000 description 1
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- IJUHLFUALMUWOM-UHFFFAOYSA-N ethyl 3-methoxypropanoate Chemical compound CCOC(=O)CCOC IJUHLFUALMUWOM-UHFFFAOYSA-N 0.000 description 1
- 229940117360 ethyl pyruvate Drugs 0.000 description 1
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- VOZRXNHHFUQHIL-UHFFFAOYSA-N glycidyl methacrylate Chemical compound CC(=C)C(=O)OCC1CO1 VOZRXNHHFUQHIL-UHFFFAOYSA-N 0.000 description 1
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- XXMIOPMDWAUFGU-UHFFFAOYSA-N hexane-1,6-diol Chemical compound OCCCCCCO XXMIOPMDWAUFGU-UHFFFAOYSA-N 0.000 description 1
- FUZZWVXGSFPDMH-UHFFFAOYSA-N hexanoic acid Chemical compound CCCCCC(O)=O FUZZWVXGSFPDMH-UHFFFAOYSA-N 0.000 description 1
- LNCPIMCVTKXXOY-UHFFFAOYSA-N hexyl 2-methylprop-2-enoate Chemical compound CCCCCCOC(=O)C(C)=C LNCPIMCVTKXXOY-UHFFFAOYSA-N 0.000 description 1
- 229920001519 homopolymer Polymers 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
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- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 150000002433 hydrophilic molecules Chemical class 0.000 description 1
- 150000004679 hydroxides Chemical class 0.000 description 1
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 description 1
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- ZFSLODLOARCGLH-UHFFFAOYSA-N isocyanuric acid Chemical compound OC1=NC(O)=NC(O)=N1 ZFSLODLOARCGLH-UHFFFAOYSA-N 0.000 description 1
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- 235000019407 octafluorocyclobutane Nutrition 0.000 description 1
- QYSGYZVSCZSLHT-UHFFFAOYSA-N octafluoropropane Chemical compound FC(F)(F)C(F)(F)C(F)(F)F QYSGYZVSCZSLHT-UHFFFAOYSA-N 0.000 description 1
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- 125000005375 organosiloxane group Chemical group 0.000 description 1
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- 239000001816 polyoxyethylene sorbitan tristearate Substances 0.000 description 1
- 235000010988 polyoxyethylene sorbitan tristearate Nutrition 0.000 description 1
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- 229920002635 polyurethane Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 235000011118 potassium hydroxide Nutrition 0.000 description 1
- BOQSSGDQNWEFSX-UHFFFAOYSA-N propan-2-yl 2-methylprop-2-enoate Chemical compound CC(C)OC(=O)C(C)=C BOQSSGDQNWEFSX-UHFFFAOYSA-N 0.000 description 1
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- 238000003860 storage Methods 0.000 description 1
- 150000003440 styrenes Chemical class 0.000 description 1
- SFZCNBIFKDRMGX-UHFFFAOYSA-N sulfur hexafluoride Chemical compound FS(F)(F)(F)(F)F SFZCNBIFKDRMGX-UHFFFAOYSA-N 0.000 description 1
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- MUTNCGKQJGXKEM-UHFFFAOYSA-N tamibarotene Chemical compound C=1C=C2C(C)(C)CCC(C)(C)C2=CC=1NC(=O)C1=CC=C(C(O)=O)C=C1 MUTNCGKQJGXKEM-UHFFFAOYSA-N 0.000 description 1
- 229940073455 tetraethylammonium hydroxide Drugs 0.000 description 1
- LRGJRHZIDJQFCL-UHFFFAOYSA-M tetraethylazanium;hydroxide Chemical compound [OH-].CC[N+](CC)(CC)CC LRGJRHZIDJQFCL-UHFFFAOYSA-M 0.000 description 1
- 125000004055 thiomethyl group Chemical group [H]SC([H])([H])* 0.000 description 1
- 125000003866 trichloromethyl group Chemical group ClC(Cl)(Cl)* 0.000 description 1
- ITMCEJHCFYSIIV-UHFFFAOYSA-N triflic acid Chemical compound OS(=O)(=O)C(F)(F)F ITMCEJHCFYSIIV-UHFFFAOYSA-N 0.000 description 1
- JOHWNGGYGAVMGU-UHFFFAOYSA-N trifluorochlorine Chemical compound FCl(F)F JOHWNGGYGAVMGU-UHFFFAOYSA-N 0.000 description 1
- YUYCVXFAYWRXLS-UHFFFAOYSA-N trimethoxysilane Chemical compound CO[SiH](OC)OC YUYCVXFAYWRXLS-UHFFFAOYSA-N 0.000 description 1
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- 238000007738 vacuum evaporation Methods 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
- C23C18/06—Coating on selected surface areas, e.g. using masks
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
- C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
- C23C18/1204—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material inorganic material, e.g. non-oxide and non-metallic such as sulfides, nitrides based compounds
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
- C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
- C23C18/125—Process of deposition of the inorganic material
- C23C18/1295—Process of deposition of the inorganic material with after-treatment of the deposited inorganic material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C26/00—Coating not provided for in groups C23C2/00 - C23C24/00
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
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Definitions
- the present invention relates to a method for forming a photoresist pattern used for manufacturing a semiconductor device, including forming an underlayer film containing metal nitride particles between a semiconductor substrate and a photoresist.
- the present invention relates to an underlayer film forming composition for forming an underlayer film containing metal nitride particles used in forming a photoresist pattern used for manufacturing a semiconductor device. Further, the present invention relates to a method for forming a lower layer film containing metal nitride particles using the lower layer film forming composition, and a lower layer film containing metal nitride particles formed from the lower layer film forming composition.
- an underlayer film made of an organic substance, such as an antireflection film or a planarization film, or an organic underlayer film may be formed between the semiconductor substrate and the photoresist.
- the photoresist pattern as a protective film, first, the organic underlayer film is removed by etching, and thereafter, the semiconductor substrate is processed.
- the etching of the organic underlayer film is generally performed by dry etching. At this time, not only the organic underlayer film but also the photoresist is etched, and there is a problem that the film thickness is reduced. Therefore, as the organic underlayer film, a film having a high removal rate by dry etching tends to be used.
- a film having a high removal rate by dry etching tends to be used.
- the photoresist is also made of an organic material like the organic underlayer film, it is difficult to suppress a decrease in the thickness of the photoresist.
- the use of thin-film photoresist has been studied. This is because if the dimension of the photoresist pattern is reduced without changing the film thickness, the aspect ratio (height / width) of the photoresist pattern will increase, which may cause the photoresist pattern to collapse. .
- the resolution of a photoresist is improved as the thickness of the photoresist is reduced. Therefore, it is desired to use a photoresist in a thin film.
- the removal rate of the dry etching depends on the type of gas used in the dry etching. Greatly depends on By properly selecting the gas type, it becomes possible to remove the hard mask (underlying film) by dry etching without causing a significant decrease in the thickness of the photoresist film. Therefore, when a photoresist and a hard mask are used, a sufficient thickness as a protective film (consisting of the photoresist and the hard mask) for processing a semiconductor substrate can be ensured even if the photoresist is a thin film. It is considered.
- a hard mask has been formed by an evaporation method using a CVD apparatus, a vacuum evaporation apparatus, a sputtering apparatus, and the like.
- a photoresist and an organic underlayer film are formed on a semiconductor substrate by application using a spin coater or the like and subsequent baking (hereinafter, referred to as a spin coating method).
- the spin coating method is simpler in equipment and the like than the vapor deposition method. Therefore, a hard mask that can be formed by a spin coating method rather than a vapor deposition method has been required.
- Patent Document 1 JP 2001-53068 A
- Patent Document 2 Japanese Patent Application Laid-Open No. 2001-242630
- Patent Document 3 Japanese Patent Application Laid-Open No. 2003-177206
- An object of the present invention is to provide an underlayer film forming composition for forming a hard mask by a spin coating method.
- Another object of the present invention is to provide a lower layer film which can be formed by a spin coating method and does not cause intermixing with a photoresist applied and formed on an upper layer.
- a lower anti-reflection film that can be formed by spin coating and reduces the reflection of exposure irradiation light to the photoresist formed on the semiconductor substrate from the substrate, and a flattening film for flattening a semiconductor substrate having irregularities.
- An object of the present invention is to provide a lower layer film that can be used as a film for preventing contamination of a photoresist layer by a substance generated from a semiconductor substrate during heating and baking. It is another object of the present invention to provide a method for forming a lower layer film for lithography using a composition for forming a lower layer film, and a method for forming a photoresist pattern.
- the present invention provides, as a first aspect, an underlayer film forming composition used for manufacturing a semiconductor device, comprising a metal nitride particle having an average particle diameter of 11 lOOOnm and an organic solvent,
- an underlayer film forming composition used for manufacturing a semiconductor device comprising a metal nitride particle having an average particle diameter of 11 lOOOnm, an organic material, and an organic solvent,
- the metal nitride particles may be titanium nitride, titanium oxynitride, silicon nitride, silicon oxynitride, tantalum nitride, tantalum oxynitride, tungsten nitride, tungsten oxynitride.
- the underlayer film forming composition according to the second aspect wherein the organic material is at least one component selected from the group consisting of a polymer, a crosslinkable compound, and a light absorbing compound.
- a method for forming an underlayer film used for manufacturing a semiconductor device by applying the underlayer film forming composition according to any one of the first to fifth aspects on a semiconductor substrate and firing the composition,
- the method according to the sixth aspect wherein the firing is performed under the conditions of a firing temperature of 80 ° C. to 300 ° C. and a firing time of 0.5 to 10 minutes.
- the composition for forming an underlayer film according to any one of the first to fifth aspects is applied on a semiconductor substrate, and a baking temperature of 80 to 300 ° C and a baking time of 0.5 to 10 minutes
- the lower layer film forming composition according to any one of the first to fifth aspects is applied to a semiconductor substrate.
- a tenth aspect is the method for forming a photoresist pattern according to the ninth aspect, wherein the exposure is performed by using light having a wavelength of 248 nm, 193 nm, or 157 nm.
- the present invention is an underlayer film forming composition for forming an underlayer film containing metal nitride particles. According to the present invention, an underlayer film having a low dry etching rate without causing intermixing with a photoresist can be provided.
- the underlayer film containing metal nitride particles obtained by the present invention facilitates processing of the semiconductor base substrate during the dry etching process. Further, by using the underlayer film containing metal nitride particles obtained by the present invention, the amount of decrease in the thickness of the photoresist when the underlayer film is removed by dry etching can be reduced.
- the underlayer film forming composition of the present invention contains metal nitride particles and an organic solvent. Further, the underlayer film forming composition of the present invention contains metal nitride particles, an organic material, and an organic solvent. In addition, inorganic particles such as carbon particles, silicon oxide particles, and titanium oxide can be included.
- the proportion of the solid content in the underlayer film forming composition of the present invention is, for example, 0.170% by mass, or 0.550% by mass, or 1 to 40% by mass, or 10 to 30% by mass. %.
- the solid content is a value obtained by removing the organic solvent component from all components of the underlayer film forming composition.
- the content of the metal nitride particles and the organic material is, for example, 4099.9% by mass in the solid content as metal nitride particles.
- the organic material is, for example, 0.160% by mass, for example, 0.5-50% by mass, or 1-140% by mass, or 10-30% by mass.
- the underlayer film forming composition of the present invention contains particles of inorganic substances such as carbon particles, silicon oxide particles, and titanium oxide, the content is 30% by mass or less in the solid content, or 20% by mass. % By mass or less.
- the metal nitride particles contained in the underlayer film forming composition of the present invention include, for example, titanium nitride, titanium oxynitride, silicon nitride, silicon oxynitride, tantalum nitride, tantalumoxy.
- Particles of titanium nitride, titanium oxynitride, silicon nitride, and silicon oxynitride are preferred.
- the particle diameter of the metal nitride particles to be used is not particularly limited as long as the lower layer film can be formed on the semiconductor substrate.
- the average particle diameter is not more than 100Onm. It is preferably lnm-1000 nm, particularly preferably lnm-lOOnm. In this case, if the average particle diameter is larger than 100 nm, it takes a long time to remove the lower layer film by etching. In addition, the smoothness of the lower layer film is impaired. Further, the dispersibility of the particles in the solvent is reduced, the particles settle, and the storage stability of the underlayer film forming composition becomes insufficient.
- the average particle diameter is obtained by applying metal nitride particles onto a semiconductor substrate, drying the particles, measuring the size (diameter) of 20 particles using a scanning electron microscope (SEM), and calculating the average value. It is calculated as When the particle is elliptical or the like, the average value of the major axis and minor axis is defined as the particle size.
- these metal nitride particles may be used alone or in a combination of two or more.
- the organic material is not particularly limited. Organic materials that have been used so far to form the film provided below the photoresist can be used. That is, an organic material for an antireflection film, an organic material for flattening, an organic material for a barrier layer, and the like can be used.
- Examples of the organic material include a polymer, a crosslinkable compound, a light absorbing compound, a surfactant, a polymer dispersant, a crosslinking catalyst, an adhesion auxiliary, and a rheology modifier. , Can be used in combination. Also, their contents are appropriately selected and used.
- the type of the polymer used as the organic material is not particularly limited.
- Polymers such as polyester, polystyrene, polyimide, acrylic polymer, metharyl polymer, polybutyl ether, phenol novolak, naphthol novolak, polyether, polyamide, and polycarbonate can be used.
- Polymers having an aromatic ring structure such as a benzene ring, a naphthalene ring, an anthracene ring, a triazine ring, a quinoline ring, and a quinoxaline ring, which function as a light absorption site are preferably used.
- Such polymers include, for example, benzyl acrylate, benzyl methacrylate, phenyl acrylate, naphthyl acrylate, anthrinole methacrylate, anthryl methyl methacrylate, styrene, hydroxystyrene, benzinolevininole Addition-polymerized polymers containing addition-polymerizable monomers such as athenole and N-pheninole maleimide as their structural units, And polycondensation polymers such as phenol nopolak and naphthol novolak. Also, mention may be made of the polymers described in U.S. Pat. No. 6,233,310, which also produce triazine compounds (trade names Cymel303, Cymell 123).
- a polymer having at least one of the following structural units (a) and (e) is also included.
- Such pomers can be prepared, for example, with reference to US Pat. Nos. 5,919,598, 5,919,599 and 6,615,479.
- a polymer having no aromatic ring structure can be used as the polymer.
- examples of such a polymer include those having an aromatic ring structure such as alkyl acrylate, alkyl methacrylate, bier ether, alkyl butyl ether, acrylonitrile, maleimide, N-alkyl maleimide, and maleic anhydride. Only the addition polymerizable monomer An addition polymerization type polymer containing as a structural unit is exemplified.
- the polymer When an addition polymerization polymer is used as the polymer, the polymer may be a homopolymer or a copolymer.
- An addition polymerizable monomer is used for the production of the addition polymerization polymer. Examples of such polymerizable monomers include acrylic acid, methacrylic acid, acrylate compounds, methacrylate compounds, acrylamide compounds, methacrylamide compounds, vinyl aldehyde compounds, styrene compounds, maleimide compounds, maleic anhydride and Acrylonitrile and the like can be mentioned.
- Examples of the acrylate compound include methyl acrylate, ethyl acrylate, normanolehexyl acrylate, isopropyl acrylate, cyclohexyl acrylate, benzyl enolate acrylate, phenyl acrylate, and anthrinomethylate.
- Examples of the methacrylic acid ester compound include methyl methacrylate, ethyl methacrylate, normal hexyl methacrylate, isopropyl methacrylate, cyclohexyl methacrylate, benzyl methacrylate, and phenyl methacrylate.
- Examples of the acrylamide compound include acrylamide, N_methylacrylamide, and N-ethyla. Acrylamide, N-benzylacrylamide, N-phenylacrylamide, ⁇ , ⁇ -dimethylacrylamide, ⁇ -anthrylacrylamide, and the like.
- Examples of the methacrylamide compound include methacrylamide, ⁇ -methyl methacrylamide, ⁇ -methyl methacrylamide, ⁇ -benzyl methacrylamide, ⁇ -phenyl methacrylamide, ⁇ , ⁇ -dimethyl methacrylamide and ⁇ - And anthryl methacrylamide.
- Examples of the bur compound include bul alcohol, 2-hydroxyethyl vinyl ether, methynolebininoleatenole, etinolebininoleatenole, benzinolebininoleatenole, vininole acetic acid, butyl trimethoxysilane, 2_ Cloethylethyl ether, 2-methoxyethylvinyl ether, burnaphthalene, buranthracene and the like can be mentioned.
- styrene compound examples include styrene, hydroxystyrene, chlorostyrene, bromostyrene, methoxystyrene, cyanostyrene, and acetyl styrene.
- maleimide compound maleimide, ⁇ -methylmaleimide, ⁇ -phenylmaleimide,
- examples of such a polymer include a condensation polymerization polymer of a glycol compound and a dicarboxylic acid compound.
- examples of the dalicol compound include diethylene glycol, hexamethylene glycol, butylene glycol and the like.
- examples of the dicarboxylic acid compound include succinic acid, adipic acid, terephthalic acid, and maleic anhydride.
- polyesters such as polypyromellitimide, poly ( ⁇ -phenylene terephthalamide), polybutylene terephthalate, and polyethylene terephthalate, polyamides, and polyimides are exemplified.
- the molecular weight of the polymer used as the organic material of the underlayer film forming composition of the present invention is, for example, 1000 to 1,000,000 or 3000 to 300000 as a weight average molecular weight, and for example, 5000 to 3000. It is 200000 or 10000-100000.
- the type of the crosslinkable compound used as the organic material of the underlayer film forming composition of the present invention is not particularly limited.
- the crosslinkable compound include a melamine compound, a substituted urea compound, and a polymer-based crosslinkable compound containing an epoxy group.
- the crosslinkable compound is a hydroxymethyl group or an alkoxymethyl group.
- examples include a nitrogen-containing compound having two or more substituted nitrogen atoms. It is a nitrogen-containing compound having two or more nitrogen atoms substituted with groups such as a hydroxymethyl group, a methoxymethyl group, an ethoxymethyl group, a butoxymethyl group, and a hexoxymethyl group.
- crosslinkable compound examples include methoxymethyl type melamine compounds (trade names Cymenore 300, Simenole 301, Simenole 303, and Simenole 350) manufactured by Mitsui Cytec Co., Ltd. Compounds such as Mycoat 506, Mycoat 508), glycolperyl compounds (trade names Cymenore 1170, Powderlink 1174), methylated urea resins (trade name UFR65), butylated urea resins (trade names UFR300, U- VAN10S60, U— VAN10R, U— VAN 11HV), Urea / formaldehyde resin (highly condensed, trade names Becamine J-300S, Becamine P—955, Becamine N) manufactured by Dainippon Ink and Chemicals, Inc. Can be mentioned.
- methoxymethyl type melamine compounds trade names Cymenore 300, Simenole 301, Simenole 303, and Simenole 350 manufactured by Mitsui Cytec Co., Ltd
- crosslinkable compound examples include acrylamide substituted with a hydroxymethyl group or an alkoxymethyl group such as N-hydroxymethylacrylamide, N-methoxymethyl methacrylamide, N_ethoxymethylacrylamide, and N_butoxymethylmethacrylamide.
- a polymer produced using a compound or a methacrylamide compound can be used. Examples of such a polymer include poly (N-butoxymethylacrylamide), a copolymer of N-butoxymethylacrylamide and styrene, a copolymer of N-hydroxymethylmethacrylamide and methyl methacrylate, and N-ethoxymethylmethacrylamide.
- the kind of the light absorbing compound used as the organic material of the underlayer film forming composition of the present invention is not particularly limited. By selecting the type and amount of the light absorbing compound, it is possible to adjust the characteristics such as the refractive index and the attenuation coefficient of the underlayer film formed from the underlayer film forming composition of the present invention.
- a light-absorbing compound a compound having a high absorptivity for light in the wavelength region of the photosensitive characteristic of the photosensitive component in the photoresist layer provided on the lower film is preferably used.
- One type of light-absorbing compound can be used, or two or more types can be used in combination.
- Examples of the light-absorbing compound include a phenyl compound, a benzophenone compound, a benzotriazole compound, an azo compound, a naphthalene compound, an anthracene compound, an anthraquinone compound, a triazine compound, a triazine compound, and a triazine compound.
- the use of quinoliny ligatures is possible. It is possible to use a fenirui conjugate, a naphthalene compound, an anthracene compound, a triazine conjugate, a triazinetrione conjugate, and the like.
- Examples of the light absorbing compound include a phenyl compound having at least one hydroxyl group, an amino group or a carboxyl group, a naphthalene compound having one hydroxyl group, an amino group or a carboxyl group, at least one hydroxyl group, an amino group or a carboxyl group.
- Anthracene compounds having a group are preferably used.
- phenyl compound having at least one hydroxyl group, amino group or carboxyl group examples include phenol, bromophenol, 4,4'-sulfonyldiphenol, tert-butylphenol, biphenol, benzoic acid, salicylic acid, and hydroxyisophthalate.
- examples thereof include acids, phenylacetic acid, aniline, benzylamine, benzyl alcohol, cinnaminole alcohol, phenylalanine and phenoxypropanol.
- Examples of the naphthalene compound having at least one hydroxyl group, amino group, or carboxyl group include 1_naphthalenecarboxylic acid, 2_naphthalenecarboxylic acid, 1_naphthol, 2-naphthol, 1-aminonaphthalene, and naphthylacetic acid. , 1-hydroxy-2-naphthalenecarboxylic acid, 3-hydroxy-2_naphthalenecarboxylic acid, 3,7-dihydroxy-2_naphthalenecarboxylic acid, 6_bromo_2-hydroxynaphthalene and 2,6_naphthalenedicarboxylic acid Raising power S
- anthracene compound having at least one hydroxyl group, amino group, or carboxyl group examples include 9-anthracenecarboxylic acid, 9-hydroxymethylanthracene, and 1-amino Anthracene and the like can be mentioned.
- a triazinetrione compound is also preferably used.
- Examples of the crosslinking catalyst used as the organic material of the underlayer film forming composition of the present invention include an oxide or an acid generator.
- Examples of the acid compound include p-toluenesulfonic acid, trifluoromethanesulfonic acid, pyridinium-p-toluenesulfonic acid, salicinoleic acid, camphorsulfonic acid, sulfosalicylic acid, citric acid, benzoic acid, and hydroxybenzoic acid. And acid compounds such as acids.
- an aromatic sulfonic acid compound can be used as the oxide.
- aromatic sulfonic acid compound examples include ⁇ -toluenesulfonic acid, pyridinium_p-toluenesulfonic acid, sulfosalicinoleic acid, 4-chlorobenzenesnolephonic acid, 4-hydroxybenzenesnolephonic acid, benzenedisnolephonic acid, 1 _ Naphthalenes-nolephonic acid and pyridinyl-1-naphthalenes-no-lefonic acid.
- Acid generators include 2,4,4,6-tetrabromocyclohexa Genone, 2_nitrobenzyltosylate, bis (4_tert_butylpheninole) odoniumtri phenololenomethanolenorfonate, triphenylenolesnorefonium trifluoronorolemethanolenorfonate, phenylebis (trichloromethyl) _s-triazine Benzoin tosylate and N-hydroxysuccinimide trifluoromethanesulfonate.
- the acid compound and the acid generator can be used alone or in combination of two or more.
- polymer dispersant used as the organic material of the underlayer film forming composition of the present invention examples include polyoxyethylene alkyl ethers, polyoxyethylene alkyl phenol ethers, polyethylene glycol diesters, and sorbitol. Ethylene oxide adducts, sorbitol propylene oxide adducts, sorbitol ethylene oxide 'propylene oxide mixed adducts, polyethylene polyamine ethylene oxide adducts, polyethylene polyamine propylene oxide adducts, polyethylene polyadduct Ethylene oxide and propylene oxide mixed adducts of amines, ethylene oxide adducts of nouryl phenyl ether formalin condensate, poly (meth) acrylates, unsaturated monomers containing carboxinole group and other Salts with copolymers of poly (meth) acrylate, partial alkyl esters of poly (meth) atalylic acid or salts thereof, polystylene
- the surfactant used as the organic material of the underlayer film forming composition of the present invention includes, for example, polyoxyethylene such as polyoxyethylene lauryl ether, polyoxyethylene stearyl ether, and polyoxyethylene oleyl ether.
- Alkyl ethers, polyoxyethylene alkylaryl ethers such as polyoxyethylene octyl phenol ether, polyoxyethylene nonyl phenol ether, polyoxyethylene polyoxypropylene block copolymers, sorbitan monolaurate, sorbitan monopalmitate, Sorbitan fatty acid esters such as sorbitan monostearate, sorbitan trioleate and sorbitan tristearate; polyoxyethylene sorbitan monolaurate
- Nonionic surfactants such as fatty acid esters of polyoxyethylene sorbitan such as stearate and polyoxyethylene sorbitan tristearate, trade names F-Top EF301, EF303, EF352 (manufactured by Tochem Products
- Examples of the adhesion aid used as the organic material of the underlayer film forming composition of the present invention include chlorosilanes such as trimethylchlorosilane, dimethylvinylchlorosilane, chloromethinoresimetinolechlorosilane, and trimethylmethoxysilane.
- Examples of the rheology modifier used as the organic material of the underlayer film forming composition of the present invention include phthalic acid derivatives such as dimethyl phthalate, getyl phthalate, diisobutyl phthalate and butyl isodecyl phthalate, and dinormal butyl adipate , Adipic acid derivatives such as diisootatyl adipate and octyldecyl adipate, maleic acid derivatives such as dinormal butynomalate, getylmalate and dinonylmalate, oleic acid derivatives such as methyl oleate, butyrate and tetrahydrofurfurylolate, and nor Stearic acid derivatives such as malbutyl stearate and glyceryl stearate can be mentioned.
- phthalic acid derivatives such as dimethyl phthalate, getyl phthalate, diisobutyl phthalate and butyl isodecyl
- the organic material of the underlayer film forming composition of the present invention it is preferable to use a combination of a polymer and a crosslinkable compound.
- the ratio of the polymer in the organic material is 20 to 90% by mass or 30 to 60% by mass, and the ratio of the crosslinkable compound is 1080% by mass or 40 to 70% by mass.
- the organic material of the underlayer film forming composition of the present invention it is preferable to use a combination of a polymer, a crosslinkable compound and a crosslinking catalyst.
- the proportion of the polymer in the organic material is 2090% by mass or 3060% by mass
- the proportion of the crosslinkable compound is 575% by mass or 3065% by mass. Is 0.15% by mass or 0.5-3% by mass.
- organic solvent in the underlayer film forming composition of the present invention various organic solvents can be used without particular limitation.
- ethylene glycol monomethyl ether ethylene glycol monomethyl ether / leate / re, meth / reserosonoleno acetate, etinoleserosol nole acetate
- diethylene glycol monomethyl ether diethylene glycol monoethyl ether
- propylene glycol propylene glycol monomethyl ether
- propylene glycol monomethyl ether propylene glycol monomethyl ether
- propylene glycol monomethyl ether propylene glycol monomethyl ether
- propylene glycol monomethyl ether propylene glycol monomethyl ether
- propylene glycol monomethyl ether propylene glycol monomethyl ether
- propylene glycol monomethyl ether propylene glycol monomethyl ether
- propylene glycol monomethyl ether propylene glycol propyl ether acetate, toluene, x
- Substrates used in the manufacture of semiconductor devices e.g., silicon Z silicon dioxide coated substrates, silicon
- the substrate is coated on a nitride substrate, glass substrate, silicon wafer substrate, ITO substrate, polyimide substrate, low dielectric constant material (low-k material) coated substrate, etc.) by an appropriate coating method such as a spin coater or a coater.
- the underlayer film forming composition of the present invention is applied and then fired to form an underlayer film.
- Conditions for baking are appropriately selected from baking temperatures of 80 ° C., 300 ° C., or 150 ° C. to 250 ° C., and baking times of 0.5 10 minutes or 115 minutes.
- the thickness of the lower layer film is, for example, 11 lOOOnm, 10 500 ⁇ m, or 50 lOOnm.
- a photoresist layer is formed on the lower layer film.
- the thickness of the photoresist layer is 50 lOOOOnm.
- any of a negative photoresist and a positive photoresist which are widely used without particular limitation can be used.
- a positive photoresist composed of a novolak resin and 1,2-naphthoquinonediazidosulfonic acid ester
- a chemically amplified photoresist composed of a binder having a group capable of decomposing by an acid to increase the alkali dissolution rate and a photoacid generator
- a chemically amplified photoresist composed of a low-molecular compound that decomposes with an acid to increase the alkali dissolution rate of a photoresist, an alkali-soluble binder, and a photoacid generator; and a group that decomposes with an acid to increase the alkali dissolution rate.
- a chemically amplified photoresist consisting of a photoacid generator and a low molecular weight compound that increases the alkali dissolution rate of the photoresist by being decomposed by a binder and an acid, such as APEX_E manufactured by Shipley and Sumitomo Chemical. And PAR710 manufactured by Shin-Etsu Chemical Co., Ltd. SEPR430 manufactured by Shin-Etsu Chemical Co., Ltd.
- the substrate covered with the underlayer film containing the metal nitride particles and the photoresist layer is irradiated with i-line, KrF excimer laser, ArF excimer laser, F2 excimer laser, and the like through a preset mask.
- Exposure After exposure, if necessary, post-exposure baking is performed, and then the photoresist is partially removed in accordance with a set pattern by development using a developing solution such as an alkaline aqueous solution.
- Examples of the developing solution for the photoresist include aqueous solutions of alkali metal hydroxides such as potassium hydroxide and sodium hydroxide, and hydroxides such as tetramethylammonium hydroxide, tetraethylammonium hydroxide, and choline.
- Aqueous solution of quaternary ammonium, ethanolamine, propylamine examples thereof include an alkaline aqueous solution such as an aqueous amine solution such as amine and ethylenediamine.
- As the developer a commonly used aqueous solution of 2.38% by mass of tetramethylammonium hydroxide can be used. Further, a surfactant or the like can be added to these developers.
- the development conditions are appropriately selected from a temperature of 550 ° C and a time of 0.1 to 5 minutes.
- the lower layer film where the photoresist has been removed is removed by dry etching to expose the semiconductor substrate. It is preferable to use a chlorine-based gas for dry etching. In dry etching using a chlorine-based gas, the photoresist (organic substance) is not easily removed, but the lower layer film (inorganic substance) of the present invention is quickly removed. Therefore, the photoresist can be used as a thin film.
- tetrafluoromethane perfluorocyclobutane (CF), perfluoropropane (CF), trif-noleolomethane, carbon monoxide, argon, hydrogen, and chlorine-based gas are used.
- Nitrogen ammonia, oxygen, nitrogen, sulfur hexafluoride, difluoromethane, nitrogen trifluoride, and chlorine trifluoride.
- the semiconductor substrate is processed using the patterned photoresist and the underlying film as a protective film.
- Processing of the semiconductor substrate is preferably performed by dry etching using a fluorine-based gas such as tetrafluoromethane. This is because the lower layer film of the present invention is a hard mask and is not easily removed by dry etching with a fluorine-based gas.
- an antireflection film layer may be applied and formed on the upper layer of the lower film of the present invention before applying and forming a photoresist.
- the anti-reflective coating composition used therefor is not particularly limited, and any one of those conventionally used in a lithography process can be arbitrarily selected and used.
- the antireflection film can be formed by a commonly used method, for example, application and baking using a spinner or a coater.
- the antireflective coating composition examples include those having a light absorbing compound, a resin and a solvent as main components, a resin having a light absorbing group linked by a chemical bond, a crosslinker and a solvent as main components, And those mainly containing a hydrophilic compound, a cross-linking agent and a solvent, and those mainly containing a light-absorbing polymer cross-linking agent and a solvent.
- an acid component, an acid generator component, a rheology adjusting agent and the like can be contained.
- any compound having a high absorption capacity for light in the photosensitive characteristic wavelength region of the photosensitive component in the photoresist provided on the antireflection film can be used.
- a benzophenone compound examples include benzotriazole compounds, azo compounds, naphthalene compounds, anthracene compounds, anthraquinone compounds, and triazine compounds.
- the resin examples include polyester, polyimide, polystyrene, novolak resin, polyacetal resin, and acrylic resin.
- Examples of the resin having a light-absorbing group linked by a chemical bond include resins having a light-absorbing aromatic ring structure such as an anthracene ring, a naphthalene ring, a benzene ring, a quinoline ring, a quinoxaline ring, and a thiazole ring.
- the underlayer film containing metal nitride particles formed from the underlayer film forming composition of the present invention may have an absorption for the light depending on the wavelength of the light used in the lithography process, In such a case, it can function as a layer having an effect of preventing light reflected from the substrate.
- the underlayer film of the present invention is a layer for preventing the interaction between the substrate and the photoresist, and for preventing the material used for the photoresist or the substance generated upon exposure to the photoresist from adversely affecting the substrate. This layer can be used as a layer for preventing diffusion of a substance generated from the substrate during heating and baking into an upper photoresist.
- the solution obtained in Synthesis Example 1 was obtained in 7.5 g of a solution of propylene glycol monomethyl ether acetate containing 30% by mass of titanium oxynitride particles (average particle size: 100 nm, manufactured by ULVAC, Inc.). 5 g of a solution containing 0.75 g of polymer, 1.15 g of hexamethoxime methinolemelamine, 0.102 g of pyridinium-p-toluenesulfonic acid, 0.77 g of propylene glycol monomethyl ether, and 0.866 g of dimethyl sulfoxide were added to the KA 30 A mass% solution was used. Then, the solution was filtered using a polyethylene microfilter having a pore size of 0.2 / im to prepare a solution of the underlayer film forming composition.
- Comparative Example 2 To a solution lOg containing 5 g of the polymer obtained in Synthesis Example 2 was added 1.15 g of hexamethoxymethylmelamine, 0.012 g of pyridinium_p-toluenesulfonic acid, 0.77 g of propylene glycol monomethyl ether, and 77 g of dimethinoresnorreoxide. ⁇ 66g was the mosquitoes ⁇ 30 mass 0/0 ⁇ . Then, the solution was filtered using a polyethylene microfilter having a pore size of 0.05 zm to prepare a solution of the underlayer film forming composition containing no metal nitride particles.
- the solutions of the underlayer film forming compositions obtained in Examples 1 and 2 were respectively applied to a silicon wafer substrate by a spinner. It was baked at 205 ° C for 1 minute on a hot plate to form a lower layer film (460 nm thick). These underlayer films were immersed in ethyl lactate and propylene glycol monomethyl ether, which are the solvents used for photoresists, and we insisted that they were insoluble in these solvents.
- the solutions of the underlayer film forming compositions obtained in Examples 1 and 2 were respectively applied to a silicon wafer substrate by a spinner.
- the resultant was baked at 205 ° C. for 5 minutes on a hot plate to form a lower layer film (film thickness: 450 nm).
- a commercially available photoresist solution (manufactured by Shiple Corporation, trade name APEX-E, etc.) was applied to the upper layer of these lower films by a spinner. Heated on a hot plate at 90 ° C for 1 minute to form a photoresist layer. After exposing the photoresist, post-exposure heating was performed at 90 ° C. for 1.5 minutes. After developing the photoresist, the thickness of the underlayer film was measured, and it was confirmed that intermixing between the underlayer film and the photoresist did not occur.
- the solutions of the underlayer film forming compositions obtained in Examples 1 and 2 and Comparative Examples 1 and 2 were each applied to a silicon wafer substrate using a spinner. It was baked at 205 ° C for 5 minutes on a hot plate to form lower layer films (each 450 nm thick). Then, the dry etching rate was measured using RIE system ES401 manufactured by Japan Scientific, and using CF as a dry etching gas. The dry etching rate was calculated as the amount of decrease in the thickness of the lower film per unit time.
- Table 1 shows the results. The selectivity indicates the dry etching rate of the underlying film when the dry etching rate of the photoresist is 1.00.
- A1 is 2-hydro
- A2 is poly (2-hydroxyshethyl) acrylate
- B1 is titanium oxynitride.
- the etching rate of the underlayer film containing metal nitride particles obtained from the underlayer film forming composition in Examples 1 and 2 may be smaller than that of the underlayer film containing no metal nitride particles of Comparative Example 1. confirmed.
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Abstract
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DE602004026635T DE602004026635D1 (de) | 2003-12-26 | 2004-12-22 | Zusammensetzung zur bildung eines nitridbeschichtungsfilms für eine hartmaske |
EP04807582A EP1703328B1 (en) | 2003-12-26 | 2004-12-22 | Composition for forming nitride coating film for hard mask |
KR1020067012909A KR101158298B1 (ko) | 2003-12-26 | 2004-12-22 | 하드 마스크용 도포형 질화막 형성 조성물 |
US10/584,133 US7727902B2 (en) | 2003-12-26 | 2004-12-22 | Composition for forming nitride coating film for hard mask |
JP2005516606A JP4488234B2 (ja) | 2003-12-26 | 2004-12-22 | ハードマスク用塗布型窒化膜形成組成物 |
CN2004800391122A CN1902550B (zh) | 2003-12-26 | 2004-12-22 | 形成硬掩模用涂布型氮化膜的组合物 |
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Also Published As
Publication number | Publication date |
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US7727902B2 (en) | 2010-06-01 |
DE602004026635D1 (de) | 2010-05-27 |
JPWO2005064403A1 (ja) | 2007-12-20 |
TWI383263B (zh) | 2013-01-21 |
EP1703328B1 (en) | 2010-04-14 |
US20070148557A1 (en) | 2007-06-28 |
EP1703328A1 (en) | 2006-09-20 |
CN1902550B (zh) | 2012-07-18 |
TW200527141A (en) | 2005-08-16 |
CN1902550A (zh) | 2007-01-24 |
EP1703328A4 (en) | 2007-03-14 |
JP4488234B2 (ja) | 2010-06-23 |
KR101158298B1 (ko) | 2012-06-26 |
KR20060134964A (ko) | 2006-12-28 |
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