TWI547997B - 硬遮罩材料 - Google Patents

硬遮罩材料 Download PDF

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Publication number
TWI547997B
TWI547997B TW104126278A TW104126278A TWI547997B TW I547997 B TWI547997 B TW I547997B TW 104126278 A TW104126278 A TW 104126278A TW 104126278 A TW104126278 A TW 104126278A TW I547997 B TWI547997 B TW I547997B
Authority
TW
Taiwan
Prior art keywords
film
hard mask
layer
plasma
gen
Prior art date
Application number
TW104126278A
Other languages
English (en)
Chinese (zh)
Other versions
TW201543574A (zh
Inventor
維許瓦納森 雷家拉健
喬治 安德魯 安東尼力
亞那達 班尼吉
史拉文德克 巴特 凡
Original Assignee
諾菲勒斯系統公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US12/631,709 external-priority patent/US8178443B2/en
Priority claimed from US12/631,691 external-priority patent/US8247332B2/en
Application filed by 諾菲勒斯系統公司 filed Critical 諾菲勒斯系統公司
Publication of TW201543574A publication Critical patent/TW201543574A/zh
Application granted granted Critical
Publication of TWI547997B publication Critical patent/TWI547997B/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H10P14/6336—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/081—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts
    • H10W20/084—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts for dual-damascene structures
    • H10W20/087—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts for dual-damascene structures involving multiple stacked pre-patterned masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
    • H10P14/6529—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to a gas or vapour
    • H10P14/6532—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to a gas or vapour by exposure to a plasma
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/6922—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H10P14/6923—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material being boron or phosphorus doped silicon oxides, e.g. BPSG, BSG or PSG
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/081—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts
    • H10W20/084—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts for dual-damascene structures
    • H10W20/088—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts for dual-damascene structures involving partial etching of via holes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/081—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts
    • H10W20/089—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts using processes for implementing desired shapes or dispositions of the openings, e.g. double patterning
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/081—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Drying Of Semiconductors (AREA)
TW104126278A 2009-12-04 2010-11-25 硬遮罩材料 TWI547997B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12/631,709 US8178443B2 (en) 2009-12-04 2009-12-04 Hardmask materials
US12/631,691 US8247332B2 (en) 2009-12-04 2009-12-04 Hardmask materials

Publications (2)

Publication Number Publication Date
TW201543574A TW201543574A (zh) 2015-11-16
TWI547997B true TWI547997B (zh) 2016-09-01

Family

ID=44130378

Family Applications (2)

Application Number Title Priority Date Filing Date
TW104126278A TWI547997B (zh) 2009-12-04 2010-11-25 硬遮罩材料
TW099140866A TWI505364B (zh) 2009-12-04 2010-11-25 硬遮罩材料

Family Applications After (1)

Application Number Title Priority Date Filing Date
TW099140866A TWI505364B (zh) 2009-12-04 2010-11-25 硬遮罩材料

Country Status (4)

Country Link
JP (1) JP5656010B2 (https=)
KR (2) KR101798235B1 (https=)
CN (2) CN102097364B (https=)
TW (2) TWI547997B (https=)

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JP5860734B2 (ja) * 2012-03-13 2016-02-16 株式会社ライテック研究所 硬質皮膜被覆部材およびその製造方法
US9234276B2 (en) 2013-05-31 2016-01-12 Novellus Systems, Inc. Method to obtain SiC class of films of desired composition and film properties
US10325773B2 (en) 2012-06-12 2019-06-18 Novellus Systems, Inc. Conformal deposition of silicon carbide films
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US10832904B2 (en) 2012-06-12 2020-11-10 Lam Research Corporation Remote plasma based deposition of oxygen doped silicon carbide films
US20180347035A1 (en) 2012-06-12 2018-12-06 Lam Research Corporation Conformal deposition of silicon carbide films using heterogeneous precursor interaction
JP6007031B2 (ja) * 2012-08-23 2016-10-12 株式会社日立国際電気 半導体装置の製造方法、基板処理装置およびプログラム
JP2014078579A (ja) * 2012-10-10 2014-05-01 Renesas Electronics Corp 半導体装置の製造方法
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JP6111097B2 (ja) * 2013-03-12 2017-04-05 株式会社日立国際電気 半導体装置の製造方法、基板処理装置およびプログラム
JP6111106B2 (ja) * 2013-03-19 2017-04-05 株式会社日立国際電気 半導体装置の製造方法、基板処理装置およびプログラム
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US10767259B2 (en) 2013-07-19 2020-09-08 Agilent Technologies, Inc. Components with an atomic layer deposition coating and methods of producing the same
CN104947085B (zh) * 2014-03-31 2017-12-19 中芯国际集成电路制造(上海)有限公司 掩膜的沉积方法、掩膜及半导体器件的刻蚀方法
US20160314964A1 (en) 2015-04-21 2016-10-27 Lam Research Corporation Gap fill using carbon-based films
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WO2017149604A1 (ja) * 2016-02-29 2017-09-08 株式会社日立国際電気 半導体装置の製造方法、基板処理装置、および記録媒体
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KR102020211B1 (ko) * 2017-01-09 2019-11-04 주식회사 테스 탄소 및/또는 보론를 포함하는 비정질 실리콘막의 형성 방법
JP7229929B2 (ja) * 2017-02-01 2023-02-28 アプライド マテリアルズ インコーポレイテッド ハードマスク応用向けのホウ素がドープされた炭化タングステン
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Also Published As

Publication number Publication date
JP5656010B2 (ja) 2015-01-21
CN105185707A (zh) 2015-12-23
CN102097364A (zh) 2011-06-15
TWI505364B (zh) 2015-10-21
JP2011139033A (ja) 2011-07-14
TW201543574A (zh) 2015-11-16
CN102097364B (zh) 2015-10-14
KR20170126827A (ko) 2017-11-20
CN105185707B (zh) 2018-06-01
KR101907802B1 (ko) 2018-12-05
KR101798235B1 (ko) 2017-11-15
KR20110063386A (ko) 2011-06-10
TW201130050A (en) 2011-09-01

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