KR101795047B1 - 적층형 상호접속 열 싱크 - Google Patents

적층형 상호접속 열 싱크 Download PDF

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KR101795047B1
KR101795047B1 KR1020110071262A KR20110071262A KR101795047B1 KR 101795047 B1 KR101795047 B1 KR 101795047B1 KR 1020110071262 A KR1020110071262 A KR 1020110071262A KR 20110071262 A KR20110071262 A KR 20110071262A KR 101795047 B1 KR101795047 B1 KR 101795047B1
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substrate
heat spreader
thermally conductive
conductive core
heat
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KR20120018713A (ko
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마크 에이. 바슈만
존 더블유. 오센바흐
사일레시 엠. 머천트
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아바고 테크놀로지스 제너럴 아이피 (싱가포르) 피티이 리미티드
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    • H01L23/00—Details of semiconductor or other solid state devices
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    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/367—Cooling facilitated by shape of device
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    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76895—Local interconnects; Local pads, as exemplified by patent document EP0896365
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    • H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Geometry (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
KR1020110071262A 2010-07-20 2011-07-19 적층형 상호접속 열 싱크 Active KR101795047B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12/840,016 2010-07-20
US12/840,016 US8492911B2 (en) 2010-07-20 2010-07-20 Stacked interconnect heat sink

Publications (2)

Publication Number Publication Date
KR20120018713A KR20120018713A (ko) 2012-03-05
KR101795047B1 true KR101795047B1 (ko) 2017-11-07

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US (3) US8492911B2 (enExample)
EP (2) EP2410563B1 (enExample)
JP (1) JP5885952B2 (enExample)
KR (1) KR101795047B1 (enExample)
CN (1) CN102339800A (enExample)
TW (1) TWI413222B (enExample)

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TWI496271B (zh) * 2010-12-30 2015-08-11 財團法人工業技術研究院 晶圓級模封接合結構及其製造方法
US20120299173A1 (en) * 2011-05-26 2012-11-29 Futurewei Technologies, Inc. Thermally Enhanced Stacked Package and Method
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US8946757B2 (en) * 2012-02-17 2015-02-03 Invensas Corporation Heat spreading substrate with embedded interconnects
US9236322B2 (en) * 2012-04-11 2016-01-12 Taiwan Semiconductor Manufacturing Company, Ltd. Methods and apparatus for heat spreader on silicon
US9337123B2 (en) 2012-07-11 2016-05-10 Taiwan Semiconductor Manufacturing Company, Ltd. Thermal structure for integrated circuit package
US10269676B2 (en) 2012-10-04 2019-04-23 Taiwan Semiconductor Manufacturing Company, Ltd. Thermally enhanced package-on-package (PoP)
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KR102103375B1 (ko) * 2013-06-18 2020-04-22 삼성전자주식회사 반도체 패키지
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TWI614860B (zh) * 2014-10-08 2018-02-11 李明芬 一種半導體引線鍵合結構及其製程
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