CN104851860B - 一种集成电路管芯及制造方法 - Google Patents

一种集成电路管芯及制造方法 Download PDF

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Publication number
CN104851860B
CN104851860B CN201510221081.2A CN201510221081A CN104851860B CN 104851860 B CN104851860 B CN 104851860B CN 201510221081 A CN201510221081 A CN 201510221081A CN 104851860 B CN104851860 B CN 104851860B
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Prior art keywords
layer
heat dissipating
metal
metal pad
active device
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CN201510221081.2A
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CN104851860A (zh
Inventor
符会利
蔡树杰
罗飞宇
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Huawei Technologies Co Ltd
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Huawei Technologies Co Ltd
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Priority to CN201810166272.7A priority Critical patent/CN108281404A/zh
Priority to CN201510221081.2A priority patent/CN104851860B/zh
Publication of CN104851860A publication Critical patent/CN104851860A/zh
Priority to PCT/CN2016/080514 priority patent/WO2016173507A1/zh
Priority to EP16785938.8A priority patent/EP3282478A4/en
Priority to BR112017023286-3A priority patent/BR112017023286A2/zh
Priority to US15/797,549 priority patent/US10607913B2/en
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Publication of CN104851860B publication Critical patent/CN104851860B/zh
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Abstract

本发明实施例提供了一种IC管芯及制造方法，用以解决采用目前的IC芯片的散热方法在降低IC芯片表面上的热点的温度方面所起的作用有限的问题。该IC管芯包括衬底；有源器件；互连层，覆盖在所述有源器件上，所述互连层包括多层金属层和多层介质层，所述多层金属层和所述多层介质层交替设置；所述多层金属层中距离所述有源器件最远的一层金属层包括金属走线和金属焊垫；及散热层，所述散热层覆盖在所述互连层上除所述金属焊垫对应的位置以外的区域，所述散热层位于封装层之下，所述封装层包括塑封材料，所述散热层包括导热率大于预设值且电绝缘的材料。

Description

一种集成电路管芯及制造方法
技术领域
本发明涉及集成电路领域，尤其涉及一种集成电路管芯及制造方法。
背景技术
随着集成电路(IC，Integrated Circuit)芯片的集成度越来越高，芯片的功率密度也越来越高；同时，在整个IC芯片中，功率密度的分布也是非均匀的。在功率密度较大的区域，在面积很小的范围内就会产生很大的热量，从而在芯片的表面成形温度很高的热点，这些“热点”的温度会比整个IC芯片的平均温度高很多。如果不能进行有效的IC芯片热管理和散热设计，对热点区域的热量快速有效的进行扩散，很容易会导致芯片的热点区域温度过高而使芯片不能正常工作。
目前，IC芯片的散热设计主要是在IC芯片封装上增加散热器，图1展示了管芯朝上塑胶球栅阵列封装体10，其上集成了散热器12。在封装体10中，IC管芯11通过管芯粘合材料13贴装在衬底15上，并与引线17相连。封装体10可通过焊球14连接到印刷线路板(图1中未示出)上。散热器12设置在衬底15上，用于排出管芯11的热量。塑封材料16将封装体10密封起来。在图1中，散热器12的材料为导电材料，因此，散热器12与管芯11之间要通过由绝缘的塑封材料16来绝缘。在图1中，散热器12绝大部分位于塑封材料16上，也就是绝大部分位于由塑封材料16构成的封层上。
图1所示的封装体采用的散热方法是在IC芯片封装结构上设计一条热通道，把热点的热量通过散热器扩散。这种散热方法是对整个芯片不加区分地进行冷却，将热量从整个封装体中移除，从而将芯片的温度维持在工作上限以下。
但是，由于IC芯片封装工艺和IC芯片封装结构上的一些物理限制，增加的散热器还不能无限接近IC管芯，由于IC管芯才是发热源，因此，在IC芯片封装上增加散热器的方法不足以降低IC芯片表面上的热点的温度，或者，在降低热点的温度方面所起的作用有限，这会导致IC芯片的工作仍会受到IC芯片表面的热点的温度的限制。
综上所述，目前的IC芯片的散热方法，由于主要是在IC芯片封装结构上增加散热器，由于散热器不能无限接近IC管芯，因此，这种散热方法在降低IC芯片表面上的热点的温度方面所起的作用有限。
发明内容
本发明实施例提供了一种集成电路管芯及制造方法，用以解决采用目前的IC芯片的散热方法在降低IC芯片表面上的热点的温度方面所起的作用有限的问题。
第一方面，提供一种集成电路管芯，包括：
衬底；
有源器件；
互连层，覆盖在所述有源器件上，所述互连层包括多层金属层和多层介质层，所述多层金属层和所述多层介质层交替设置；所述多层金属层中距离所述有源器件最远的一层金属层包括金属走线和金属焊垫；及
散热层，所述散热层覆盖在所述互连层上除所述金属焊垫对应的位置以外的区域，所述散热层位于封装层之下，所述封装层包括塑封材料，所述散热层包括导热率大于预设值且电绝缘的材料。
结合第一方面，在第一种可能的实现方式中，所述散热层覆盖在所述距离所述有源器件最远的一层金属层上。
结合第一方面，在第二种可能的实现方式中，所述互连层还包括钝化层，所述钝化层覆盖在所述距离所述有源器件最远的一层金属层上除所述金属焊垫对应的位置以外的区域，所述散热层覆盖在所述钝化层上。
结合第一方面，在第三种可能的实现方式中，包含所述集成电路管芯的集成电路芯片为引线键合芯片，所述散热层形成于施行引线键合工艺之后，所述散热层还覆盖在所述金属焊垫对应的位置。
结合第一方面、第一方面的第一种可能的实现方式或第一方面的第二种可能的实现方式，在第四种可能的实现方式中，包含所述集成电路管芯的集成电路芯片为引线键合芯片或倒装芯片。
第二方面，提供一种集成电路管芯的制造方法，包括：
在衬底上形成有源器件；
在所述有源器件的表面上以交替设置的方式形成多层金属层和多层介质层；所述多层金属层和多层介质层构成互连层；所述多层金属层中距离所述有源器件最远的一层金属层包括金属走线和金属焊垫；
在所述互连层之上、除所述金属焊垫对应的位置以外的区域形成包括导热率大于预设值且电绝缘的材料的散热层；所述散热层位于包括塑封材料的封装层之下。
结合第二方面，在第一种可能的实现方式中，在所述互连层之上、除所述金属焊垫对应的位置以外的区域形成所述散热层，包括：
在所述互连层中距离有源器件最远的一层金属层上形成所述散热层；
在所述散热层中与所述金属焊垫对应的位置开窗口。
结合第二方面，在第二种可能的实现方式中，所述集成电路管芯还包括钝化层，在所述互连层之上、除所述金属焊垫对应的位置以外的区域形成所述散热层，包括：
在所述互连层中距离所述有源器件最远的一层金属层上形成钝化层；
在所述钝化层中与所述金属焊垫对应的位置开窗口；
在所述钝化层的表面上形成所述散热层；
在所述散热层中与所述金属焊垫对应的位置开窗口。
结合第二方面，在第三种可能的实现方式中，所述集成电路管芯还包括钝化层，若包含所述集成电路管芯的集成电路芯片为引线键合芯片、且所述散热层形成于施行引线键合工艺之后，在所述互连层之上、除所述金属焊垫对应的位置以外的区域形成所述散热层，包括：
在所述互连层中距离所述有源器件最远的一层金属层上形成钝化层；
在所述钝化层中与所述金属焊垫对应的位置开窗口；
在所述钝化层的表面上形成所述散热层。
本发明实施例的有益效果包括：
本发明实施例提供的集成电路管芯及制造方法，由于散热层覆盖在IC管芯中的互连层上除所述金属焊垫对应的位置以外的区域，且位于封装层之下，因此，散热层能够更靠近IC管芯，由于散热层的材料为导热率大于预设值、且电绝缘的材料，因此，该散热层能够将IC管芯中功率密度较大的区域热量快速扩散到整个管芯的表面上，从而增大包含该IC管芯的IC芯片的散热面积，提高芯片的散热能力。
附图说明
图1为现有技术中的IC芯片的剖面图；
图2为本发明实施例提供的引线键合芯片的剖面图；
图3为本发明实施例提供的倒装芯片的剖面图；
图4a为本发明实施例提供的引线键合芯片中的IC管芯的剖面图之一；
图4b为本发明实施例提供的倒装芯片中的IC管芯的剖面图之一；
图5a为本发明实施例提供的引线键合芯片中的IC管芯的剖面图之二；
图5b为本发明实施例提供的引线键合芯片中的IC管芯的剖面图之三；
图6a为本发明实施例提供的倒装芯片中的IC管芯的剖面图之二；
图6b为本发明实施例提供的倒装芯片中的IC管芯的剖面图之三；
图7为本发明实施例提供的IC管芯的俯视图。
具体实施方式
本发明实施例提供的IC管芯及其制造方法，通过将由导热率大于预设值且电绝缘的材料构成的散热层，覆盖在IC管芯中的互连层上除金属焊垫对应的位置以外的区域，并且该散热层位于封装层之下，从而将IC管芯中功率密度较大的区域的热量快速扩散到整个管芯表面上，这增大了IC芯片的散热面积，提高了芯片的散热能力。
下面结合说明书附图，对本发明实施例提供的一种IC管芯及其制造方法的具体实施方式进行说明。
在采用现有的封装技术封装本发明实施例提供的IC管芯时，封装后形成的IC芯片包括两类，一类是图2所示的引线键合芯片，另一类是图3所示的倒装芯片。
图2所示的引线键合芯片包括，IC管芯102，管芯粘合材料101，引线103，塑封材料104，基板105，焊球106；引线键合芯片封装的一般工艺流程为：先加工出IC管芯102，再把IC管芯102通过管芯粘合材料101固定在基板105上，然后通过引线键合方式把引线103焊接到IC管芯102和基板105上，然后通过塑封材料104把IC管芯102固封起来，最后把焊球106焊接到基板105上，完成整个引线键合芯片的封装。
图3所示的倒装芯片包括IC管芯202，金属凸块(BUMP)201，底部填充料203，塑封材料204，基板205，焊球206。倒装芯片封装的一般工艺流程为：先加工出IC管芯202，BUMP201是长在IC管芯202上的。然后IC管芯202倒贴在基板205上，通过BUMP201实现IC管芯202与基板205的物理和电连接。然后注入底部填充料203，对BUMP201进行保护，然后通过塑封材料204把IC管芯202固封起来，最后把焊球206焊接到基板205上，完成整个倒装芯片的封装。
本发明实施例提供的一种IC管芯，包括：
衬底；
有源器件，所述有源器件覆盖在所述衬底上；
互连层，覆盖在所述有源器件上，所述互连层包括多层金属层和多层介质层，所述多层金属层和所述多层介质层交替设置；所述多层金属层中距离所述有源器件最远的一层金属层包括金属走线和金属焊垫；及
散热层，所述散热层覆盖在所述互连层上除所述金属焊垫对应的位置以外的区域，所述散热层位于封装层之下，所述封装层包括塑封材料，所述散热层包括导热率大于预设值且电绝缘的材料。其中，预设值可以为10W/m-k。
多层金属层和多层介质层交替设置是指，在有源器件上先形成第一层介质层，然后在第一层介质层上形成第一层金属层，然后在第一层金属层上形成第二层介质层，然后在第二层介质层上形成第二层金属层，….，直至金属层与介质层的数量符合需求。其中，各层介质层的材料可以是不同材料，但均为电绝缘材料。
互连层中的金属层中的金属走线是为了将有源器件中的电极连接在相应的位置上，互连层中的金属层中的金属焊垫是为了将有源器件中的电极引出到封装该IC管芯的封装体外，便于在实际中应用。
散热层可以覆盖在IC管芯中的互连层上除所述金属焊垫以外的部分区域，也可以覆盖在IC管芯中的互连层上除所述金属焊垫以外的所有区域。
可选地，如图4a和图4b所示，散热层覆盖在IC管芯的互连层中距离IC管芯的有源器件最远的一层金属层上、除金属焊垫对应的位置以外的区域，其中，散热层可以覆盖在IC管芯中的金属焊垫的一部分区域。此时，由于散热层的材料是绝缘材料，因此，图4a和图4b中的散热层替代了现有技术中的IC管芯中的钝化层。
其中，图4a是IC芯片为引线键合芯片时，采用散热层替代钝化层后IC管芯的结构示意图。图4a是图2中虚线框100中的截面图。图4a中包括引线103、位于互连层112中距离有源器件111最远的一层金属层中的金属焊垫107、散热层109和衬底110。在图4a中，散热层109兼具钝化层的作用。
在制造图4a所示的IC管芯时，先在衬底110上形成有源器件111，然后在有源器件111上交替形成多层金属层和多层介质层，多层金属层和多层介质层构成了互连层112，在互连层112中距离有源器件111最远的一层金属层中包含了金属焊垫107，最后再在包含金属焊垫107的金属层上形成散热层109，在散热层中正对金属焊垫的区域开窗口，窗口可以小于该窗口正对的金属焊垫，只要能够满足IC管芯能够通过金属焊垫中正对窗口的区域与强化散热的IC芯片中的基板相连即可。
图4b是IC芯片为倒装芯片时，采用散热层替代钝化层后IC管芯的结构示意图，图4b是图3中虚线框200中的截面图。图4b中包括金属凸块201、散热层207、凸块下金属(UBMunder bump metal)209、位于互连层213中中距离有源器件212最远的一层金属层中的金属焊垫210和衬底211。在图4b中，散热层207兼具钝化层的作用。
在制造图4b所述的IC管芯时，先在衬底211上形成有源器件212，然后在有源器件212上交替形成多层金属层和多层介质层，多层金属层和多层介质层构成了互连层213，在互连层213中距离有源器件212最远的一层金属层中包含了金属焊垫210，最后再在包含金属焊垫210的金属层上形成散热层207，在散热层207中正对金属焊垫210的区域开窗口，窗口可以小于该窗口正对的金属焊垫，只要能够满足IC管芯能够通过金属焊垫中正对窗口的区域与强化散热的IC芯片中的基板相连即可，然后，依次在金属焊垫210上制作UBM209和金属凸块201。
可选地，当IC管芯的互连层中还包括钝化层时，所述钝化层覆盖在所述距离所述有源器件最远的一层金属层上除所述金属焊垫对应的位置以外的区域，所述散热层覆盖在所述钝化层上。此时，当IC芯片为引线键合芯片时，本发明实施例提供的IC管芯如图5a和图5b所示。当IC芯片为倒装芯片时，本发明实施例提供的IC管芯如图6a和图6b所示。
图5a所示的IC管芯102包括衬底110、有源器件111、互连层112、钝化层108和位于互连层112中距离有源器件111最远的一层金属层中的金属焊垫107；散热层109覆盖在钝化层108上，其中，正对一个金属焊垫107的钝化层108的窗口小于或等于正对该金属焊垫107的散热层109的窗口。图5a中以正对一个金属焊垫107的钝化层108的窗口小于正对该金属焊垫107的散热层109的窗口为例进行说明，图5a中还包括引线103。图5a是图2中虚线框100中的截面图。
图5a所示的IC管芯在制造的过程中，首先在衬底110上形成有源器件111，然后在有源器件111上交替形成多层金属层和多层介质层，多层金属层和多层介质层构成了互连层112，在互连层112中距离有源器件111最远的一层金属层中包含金属焊垫107，然后在包含金属焊垫107的金属层上形成钝化层108，并在钝化层108正对金属焊垫的区域开窗口，然后在钝化层108上形成散热层109，并在散热层109正对金属焊垫107的区域开窗口，最后再进行引线键合。其中，正对一个金属焊垫107的散热层109中的窗口不小于正对该金属焊垫107的钝化层108的窗口。也就是说，在图5a所示的IC管芯的制造过程中，首先形成散热层109，然后再进行引线键合。
图5b所示的IC管芯102包括衬底110、有源器件111、互连层112、钝化层108和位于互连层112中距离有源器件111最远的一层金属层中的金属焊垫107；散热层109覆盖在钝化层108上，图5b中还包括引线103。图5b是图2中虚线框100中的截面图。
图5b所示的IC管芯在制造的过程中，首先在衬底110上形成有源器件111，然后在有源器件111上交替形成多层金属层和多层介质层，多层金属层和多层介质层构成了互连层112，在互连层112中距离有源器件111最远的一层金属层中包含金属焊垫107，然后在包含金属焊垫107的金属层上形成钝化层108，并在钝化层108正对金属焊垫107的区域开窗口，然后进行引线键合，最后在IC管芯的有源表面形成散热层109。也就是说，在图5b所示的IC管芯的制造过程中，首先进行引线键合，然后再形成散热层。在形成散热层之后，可以去除金属焊垫107上的散热层109，也就是在散热层109中正对金属焊垫107的地方开窗口(即图5b所示)，正对一个金属焊垫107的钝化层108的窗口与正对该金属焊垫107的散热层109的窗口的大小关系不限；当然，在形成散热层109之后，也可以不去除金属焊垫107上的散热层。并且，图5b中以正对一个金属焊垫107的钝化层108的窗口大于正对该金属焊垫107的散热层109的窗口为例进行说明。
图6a所示的IC管芯202的包括衬底211，有源器件212、互连层213、UBM209长在金属焊垫210上，BUMP201长在UBM209上，散热层207覆盖在钝化层208上，金属焊垫210位于互连层213中中距离有源器件212最远的一层金属层中。图6a是图3中虚线框200中的截面图。
图6a所示的IC管芯在制造的过程中，首先在衬底110上形成有源器件212，然后在有源器件212上交替形成多层金属层和多层介质层，多层金属层和多层介质层构成了互连层213，在互连层213中距离有源器件212最远的一层金属层中包含金属焊垫210，然后在包含金属焊垫210的金属层上形成钝化层208，并在钝化层208正对金属焊垫210的区域开窗口，并在窗口区域生长UBM209，然后在钝化层208上形成散热层207，并在散热层207中正对金属焊垫210的区域开窗口，最后在UBM209上生长BUMP201。其中，正对一个金属焊垫210的散热层207中的窗口不小于正对该金属焊垫210的钝化层208的窗口。
图6b所示的IC管芯202的包括衬底211，有源器件212、互连层213、UBM209长在金属焊垫210上，BUMP201长在UBM209上，散热层207覆盖在钝化层208上，金属焊垫210位于互连层213中中距离有源器件212最远的一层金属层中。图6b是图3中虚线框200中的截面图。
图6b所示的IC管芯在制造的过程中，首先在衬底110上形成有源器件212，然后在有源器件212上交替形成多层金属层和多层介质层，多层金属层和多层介质层构成了互连层213，在互连层213中距离有源器件212最远的一层金属层中包含金属焊垫210，然后在包含金属焊垫210的金属层上形成钝化层208，并在钝化层208正对金属焊垫210的区域开窗口，并在窗口区域生长UBM209，然后在UBM209上生长BUMP201，然后在钝化层208上形成散热层207，并且由于倒装芯片中的IC管芯是通过BUMP201与IC芯片中的基板连接的，因此，最后还需要去除BUMP201表面的散热层207。其中，正对一个金属焊垫210的散热层207中的窗口不小于正对该金属焊垫210的钝化层208的窗口。
图2或者图3所示的芯片中的IC管芯的俯视图可以如图7所示，均包括了衬底、有源器件、互连层和散热层。当图7中的互连层还包括钝化层时，图7为图5a、图5b、图6a和图6b所示的IC管芯中的任一IC管芯的俯视图。当图7中的互连层还不包括钝化层时，图7为图4a或图4b所示的IC管芯的俯视图。
图7中包括覆盖在IC管芯中的有源器件上的互连层中距离所述有源器件最远的一层金属层31以及散热层32，其中，金属层31又可以分为金属层中的金属走线311和金属焊垫312，在散热层32中正对着金属层31中的金属焊垫312的位置开几个窗口，窗口可以小于金属焊垫，也就是要将金属焊垫312上的窗口位置覆盖的钝化层去除，使得IC管芯可以通过未覆盖钝化层的金属焊垫312与IC芯片中的基板相连。
实际中覆盖在在IC管芯中的有源器件上的互连层中距离所述有源器件最远的一层金属层的图形不限于图7所示的图形。
本发明实施例提供的一种IC管芯的制造方法，包括：
在衬底上形成有源器件；
在所述有源器件的表面上以交替设置的方式形成多层金属层和多层介质层；所述多层金属层和多层介质层构成互连层；所述多层金属层中距离所述有源器件最远的一层金属层包括金属走线和金属焊垫；
在所述互连层之上、除所述金属焊垫对应的位置以外的区域形成包括导热率大于预设值且电绝缘的材料的散热层；所述散热层位于包括塑封材料的封装层之下。
其中，金属焊垫对应的位置可以是正对金属焊垫的区域。
在实际中，可以在IC管芯中的互连层上除所述金属焊垫以外的部分区域形成散热层，也可以在IC管芯中的互连层上除所述金属焊垫以外的所有区域中形成散热层。
这样，散热层可以与IC管芯直接接触，能够将IC管芯上的热量快速扩散到整个芯片上，从而增大IC芯片的散热面积，提高芯片的散热能力。
可选地，在所述互连层之上、除所述金属焊垫对应的位置以外的区域形成所述散热层，包括：
在所述互连层中距离有源器件最远的一层金属层上形成所述散热层；
在所述散热层中与所述金属焊垫对应的位置开窗口。
这样，IC管芯可以通过金属焊垫中未被散热层覆盖的区域与IC芯片中的基板以引线键合、BUMP或其他方式连接。当IC管芯通过金属焊垫中未被散热层覆盖的区域与IC芯片中的基板以引线键合方式连接时，IC管芯的结构示意图如图4a所示；当IC管芯通过金属焊垫中未被散热层覆盖的区域与IC芯片中的基板以BUMP方式连接时，IC管芯的结构示意图如图4b所示。
当IC管芯的互连层中还包括钝化层时，在所述互连层之上、除所述金属焊垫对应的位置以外的区域形成所述散热层，包括：
在所述互连层中距离所述有源器件最远的一层金属层上形成钝化层；
在所述钝化层中与所述金属焊垫对应的位置开窗口，也就是要将与所述金属焊垫对应的位置的钝化层去除；
在所述钝化层的表面上形成所述散热层；
在所述散热层中与所述金属焊垫对应的位置开窗口，也就是要将与所述金属焊垫对应的位置的散热层去除。
这样，IC管芯可以通过金属焊垫中未被散热层和钝化层覆盖的区域与IC芯片中的基板以引线键合、BUMP或其他方式连接。当IC管芯通过金属焊垫中未被散热层和钝化层覆盖的区域与IC芯片中的基板以引线键合方式连接时，IC管芯的结构示意图如图5a或图5b所示；当IC管芯通过金属焊垫中未被散热层覆盖的区域与IC芯片中的基板以BUMP方式连接时，IC管芯的结构示意图如图6a或图6b所示。
可选地，当IC芯片为引线键合芯片、且在进行引线键合之后再形成散热层时，在所述互连层之上、除所述金属焊垫对应的位置以外的区域形成所述散热层，包括：
在所述互连层中距离所述有源器件最远的一层金属层上形成钝化层；
在所述钝化层中与所述金属焊垫对应的位置开窗口；
在所述钝化层的表面上形成所述散热层。在这种工艺中，可以不必在散热层中与所述金属焊垫对应的位置开窗口。
本发明实施例提供的IC管芯及其制造方法不仅适用于引线键合芯片和倒装芯片，还是用于其它封装形式的芯片。
本发明实施例提供的强化散热的IC芯片及其制造方法中的散热层的材料是导热率高且电绝缘的材料，散热层的厚度可以是工艺所需的任意厚度，并且散热层的形成方法不限于物理溅射、化学沉积、电镀、涂敷等方法。
本领域技术人员可以理解附图只是一个优选实施例的示意图，附图中的模块或流程并不一定是实施本发明所必须的。
本领域技术人员可以理解实施例中的装置中的模块可以按照实施例描述进行分布于实施例的装置中，也可以进行相应变化位于不同于本实施例的一个或多个装置中。上述实施例的模块可以合并为一个模块，也可以进一步拆分成多个子模块。
上述本发明实施例序号仅仅为了描述，不代表实施例的优劣。
显然，本领域的技术人员可以对本发明进行各种改动和变型而不脱离本发明的精神和范围。这样，倘若本发明的这些修改和变型属于本发明权利要求及其等同技术的范围之内，则本发明也意图包含这些改动和变型在内。

Claims (9)

1.一种集成电路管芯，其特征在于，包括：
衬底；
有源器件；
互连层，覆盖在所述有源器件上，所述互连层包括多层金属层和多层介质层，所述多层金属层和所述多层介质层交替设置；所述多层金属层中距离所述有源器件最远的一层金属层包括金属走线和金属焊垫；及
散热层，所述散热层覆盖在所述互连层上除所述金属焊垫对应的位置以外的区域，所述散热层位于封装层之下，所述封装层包括塑封材料，所述散热层包括导热率大于预设值且电绝缘的材料。
2.如权利要求1所述的集成电路管芯，其特征在于，所述散热层覆盖在所述距离所述有源器件最远的一层金属层上。
3.如权利要求1所述的集成电路管芯，其特征在于，所述互连层还包括钝化层，所述钝化层覆盖在所述距离所述有源器件最远的一层金属层上除所述金属焊垫对应的位置以外的区域，所述散热层覆盖在所述钝化层上。
4.如权利要求1所述的集成电路管芯，其特征在于，包含所述集成电路管芯的集成电路芯片为引线键合芯片，所述散热层形成于施行引线键合工艺之后，所述散热层还覆盖在所述金属焊垫对应的位置。
5.如权利要求1～3任一所述的集成电路管芯，其特征在于，包含所述集成电路管芯的集成电路芯片为引线键合芯片或倒装芯片。
6.一种集成电路管芯的制造方法，其特征在于，包括：
在衬底上形成有源器件；
在所述有源器件的表面上以交替设置的方式形成多层金属层和多层介质层；所述多层金属层和多层介质层构成互连层；所述多层金属层中距离所述有源器件最远的一层金属层包括金属走线和金属焊垫；
在所述互连层之上、除所述金属焊垫对应的位置以外的区域形成包括导热率大于预设值且电绝缘的材料的散热层；所述散热层位于包括塑封材料的封装层之下。
7.如权利要求6所述的方法，其特征在于，在所述互连层之上、除所述金属焊垫对应的位置以外的区域形成所述散热层，包括：
在所述互连层中距离有源器件最远的一层金属层上形成所述散热层；
在所述散热层中与所述金属焊垫对应的位置开窗口。
8.如权利要求6所述的方法，其特征在于，所述集成电路管芯还包括钝化层，在所述互连层之上、除所述金属焊垫对应的位置以外的区域形成所述散热层，包括：
在所述互连层中距离所述有源器件最远的一层金属层上形成钝化层；
在所述钝化层中与所述金属焊垫对应的位置开窗口；
在所述钝化层的表面上形成所述散热层；
在所述散热层中与所述金属焊垫对应的位置开窗口。
9.如权利要求6所述的方法，其特征在于，所述集成电路管芯还包括钝化层，若包含所述集成电路管芯的集成电路芯片为引线键合芯片、且所述散热层形成于施行引线键合工艺之后，在所述互连层之上、除所述金属焊垫对应的位置以外的区域形成所述散热层，包括：
在所述互连层中距离所述有源器件最远的一层金属层上形成钝化层；
在所述钝化层中与所述金属焊垫对应的位置开窗口；
在所述钝化层的表面上形成所述散热层。
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