JP2012028771A - 積層状の相互接続ヒートシンク - Google Patents
積層状の相互接続ヒートシンク Download PDFInfo
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- JP2012028771A JP2012028771A JP2011158573A JP2011158573A JP2012028771A JP 2012028771 A JP2012028771 A JP 2012028771A JP 2011158573 A JP2011158573 A JP 2011158573A JP 2011158573 A JP2011158573 A JP 2011158573A JP 2012028771 A JP2012028771 A JP 2012028771A
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- Prior art keywords
- heat spreader
- heat
- substrate
- core
- integrated circuit
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- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76895—Local interconnects; Local pads, as exemplified by patent document EP0896365
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Abstract
【解決手段】電子デバイス100は集積回路103とヒートスプレッダ160とを含む。集積回路103は、内部に配置されているアクティブ・ビア151を備えた基板139を含む。ヒートスプレッダ160は熱伝導コア163を含む。アクティブ・ビア151は、熱伝導コア163を貫通する、対応するヒートスプレッダ・ビア220に接続されている。
【選択図】図1
Description
Claims (10)
- 基板を有する集積回路と、
前記基板の内部に配置されているアクティブ・ビアと、
熱伝導コアを含むヒートスプレッダと、
前記熱伝導コアを貫通しておりかつ前記アクティブ・ビアに導電結合されているヒートスプレッダ・ビアとを含む、電子デバイス。 - 前記基板の内部に配置されておりかつ前記熱伝導コアに接続されている基板プラグをさらに含む、請求項1に記載の電子デバイス。
- 前記集積回路は第1の集積回路であり、前記熱伝導コアは前記第1の集積回路と第2の集積回路との間に配置されており、前記アクティブ・ビアは、前記第1の集積回路と前記第2の集積回路との間で信号を伝達するように構成されている、請求項1に記載の電子デバイス。
- 前記熱伝導コアは電気絶縁層であり、前記ヒートスプレッダ・ビアは前記電気絶縁層に直接接触しており、前記基板の内部に配置されている基板プラグが、前記電気絶縁層の内部に配置されているヒートスプレッダ・プラグに接続されている、請求項1に記載の電子デバイス。
- 電子デバイス基板に取り付けられるように構成されているヒートスプレッダであって、
熱伝導コアと、
前記熱伝導コアを貫通しているヒートスプレッダ・ビアと、
集積回路基板プラグへのはんだ接続を形成するように構成されている前記熱伝導コアの接続点とを含む、ヒートスプレッダ。 - 前記熱伝導コアは導電層であり、前記熱伝導コアと前記ヒートスプレッダ・ビアとの間に配置されている誘電層をさらに含む、請求項5に記載のヒートスプレッダ。
- 前記熱伝導コアは電気絶縁層であり、はんだボールへの冶金接続を形成するように構成されているヒートスプレッダ・プラグをさらに含む、請求項5に記載のヒートスプレッダ。
- 電子デバイスを形成する方法であって、
基板を有する集積回路を設け、
前記基板の内部にアクティブ・ビアを配置し、
ヒートスプレッダの熱伝導コアを貫通する、対応するヒートスプレッダ・ビアに前記アクティブ・ビアを接続する、ことを含む方法。 - 前記熱伝導コアは導電層であり、前記ヒートスプレッダ・ビアと前記熱伝導コアとの間に誘電層を配置し、前記熱伝導コアの表面上にはんだパッドを形成する、ことをさらに含む請求項8に記載の方法。
- 前記熱伝導コアは電気絶縁層であり、前記電気絶縁層の内部に配置されているヒートスプレッダ・プラグと前記基板の内部に配置されている基板プラグとの間に冶金接続を形成する、ことをさらに含む、請求項8に記載の方法。
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US12/840,016 US8492911B2 (en) | 2010-07-20 | 2010-07-20 | Stacked interconnect heat sink |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2015515119A (ja) * | 2012-02-17 | 2015-05-21 | インヴェンサス・コーポレイション | 相互接続埋込み熱拡散基板 |
Families Citing this family (46)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20120053675A (ko) * | 2010-11-18 | 2012-05-29 | 삼성전자주식회사 | 반도체 패키지 및 그의 제조 방법, 및 인터포저 칩 및 그의 제조 방법 |
US8384215B2 (en) * | 2010-12-30 | 2013-02-26 | Industrial Technology Research Institute | Wafer level molding structure |
US20120299173A1 (en) * | 2011-05-26 | 2012-11-29 | Futurewei Technologies, Inc. | Thermally Enhanced Stacked Package and Method |
DE102011088256A1 (de) * | 2011-12-12 | 2013-06-13 | Zf Friedrichshafen Ag | Multilayer-Leiterplatte sowie Anordnung mit einer solchen |
US9236322B2 (en) * | 2012-04-11 | 2016-01-12 | Taiwan Semiconductor Manufacturing Company, Ltd. | Methods and apparatus for heat spreader on silicon |
US9337123B2 (en) | 2012-07-11 | 2016-05-10 | Taiwan Semiconductor Manufacturing Company, Ltd. | Thermal structure for integrated circuit package |
US10269676B2 (en) * | 2012-10-04 | 2019-04-23 | Taiwan Semiconductor Manufacturing Company, Ltd. | Thermally enhanced package-on-package (PoP) |
US20140133105A1 (en) * | 2012-11-09 | 2014-05-15 | Nvidia Corporation | Method of embedding cpu/gpu/logic chip into a substrate of a package-on-package structure |
US20140225248A1 (en) * | 2013-02-13 | 2014-08-14 | Qualcomm Incorporated | Power distribution and thermal solution for direct stacked integrated circuits |
KR102103375B1 (ko) * | 2013-06-18 | 2020-04-22 | 삼성전자주식회사 | 반도체 패키지 |
KR102057210B1 (ko) | 2013-07-05 | 2020-01-22 | 에스케이하이닉스 주식회사 | 반도체 칩 및 이를 갖는 적층형 반도체 패키지 |
US9496297B2 (en) * | 2013-12-05 | 2016-11-15 | Optiz, Inc. | Sensor package with cooling feature and method of making same |
TW201533882A (zh) * | 2014-02-21 | 2015-09-01 | Chipmos Technologies Inc | 覆晶堆疊封裝 |
US9786633B2 (en) | 2014-04-23 | 2017-10-10 | Massachusetts Institute Of Technology | Interconnect structures for fine pitch assembly of semiconductor structures and related techniques |
US9524917B2 (en) | 2014-04-23 | 2016-12-20 | Optiz, Inc. | Chip level heat dissipation using silicon |
US9356009B2 (en) * | 2014-05-27 | 2016-05-31 | Micron Technology, Inc. | Interconnect structure with redundant electrical connectors and associated systems and methods |
US9691746B2 (en) * | 2014-07-14 | 2017-06-27 | Micron Technology, Inc. | Methods of manufacturing stacked semiconductor die assemblies with high efficiency thermal paths |
WO2016025478A1 (en) * | 2014-08-11 | 2016-02-18 | Massachusetts Institute Of Technology | Interconnect structures for assembly of semiconductor structures including at least one integrated circuit structure |
TWI614860B (zh) * | 2014-10-08 | 2018-02-11 | Li Ming Fen | 一種半導體引線鍵合結構及其製程 |
US9706668B2 (en) * | 2014-10-24 | 2017-07-11 | Samsung Electro-Mechanics Co., Ltd. | Printed circuit board, electronic module and method of manufacturing the same |
US9881904B2 (en) | 2014-11-05 | 2018-01-30 | Massachusetts Institute Of Technology | Multi-layer semiconductor devices fabricated using a combination of substrate and via structures and fabrication techniques |
CN107112316B (zh) * | 2014-12-26 | 2020-04-21 | 三菱电机株式会社 | 半导体模块 |
US10068181B1 (en) | 2015-04-27 | 2018-09-04 | Rigetti & Co, Inc. | Microwave integrated quantum circuits with cap wafer and methods for making the same |
CN108281404A (zh) * | 2015-04-30 | 2018-07-13 | 华为技术有限公司 | 一种集成电路管芯及制造方法 |
US9302905B1 (en) * | 2015-06-15 | 2016-04-05 | Innovative Micro Technology | Method for forming a microfabricated structure |
WO2017015432A1 (en) | 2015-07-23 | 2017-01-26 | Massachusetts Institute Of Technology | Superconducting integrated circuit |
US10134972B2 (en) | 2015-07-23 | 2018-11-20 | Massachusetts Institute Of Technology | Qubit and coupler circuit structures and coupling techniques |
DE102015116807A1 (de) * | 2015-10-02 | 2017-04-06 | Infineon Technologies Austria Ag | Funktionalisierte Schnittstellenstruktur |
US10242968B2 (en) | 2015-11-05 | 2019-03-26 | Massachusetts Institute Of Technology | Interconnect structure and semiconductor structures for assembly of cryogenic electronic packages |
WO2017131831A2 (en) | 2015-11-05 | 2017-08-03 | Massachusetts Institute Of Technology | Qubit and coupler circuit structures and coupling techniques |
KR102372300B1 (ko) | 2015-11-26 | 2022-03-08 | 삼성전자주식회사 | 스택 패키지 및 그 제조 방법 |
DE102016214607B4 (de) * | 2016-08-05 | 2023-02-02 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Elektronisches Modul und Verfahren zu seiner Herstellung |
US10586909B2 (en) | 2016-10-11 | 2020-03-10 | Massachusetts Institute Of Technology | Cryogenic electronic packages and assemblies |
US9996725B2 (en) | 2016-11-03 | 2018-06-12 | Optiz, Inc. | Under screen sensor assembly |
US10163751B2 (en) * | 2016-11-29 | 2018-12-25 | Taiwan Semiconductor Manufacturing Company, Ltd. | Heat transfer structures and methods for IC packages |
US11276667B2 (en) * | 2016-12-31 | 2022-03-15 | Intel Corporation | Heat removal between top and bottom die interface |
US11121301B1 (en) | 2017-06-19 | 2021-09-14 | Rigetti & Co, Inc. | Microwave integrated quantum circuits with cap wafers and their methods of manufacture |
US10229864B1 (en) * | 2017-09-14 | 2019-03-12 | Northrop Grumman Systems Corporation | Cryogenic integrated circuit having a heat sink coupled to separate ground planes through differently sized thermal vias |
US11004763B2 (en) | 2018-12-20 | 2021-05-11 | Northrop Grumman Systems Corporation | Superconducting device with multiple thermal sinks |
JP7267767B2 (ja) * | 2019-02-20 | 2023-05-02 | ローム株式会社 | 半導体装置および半導体装置の製造方法 |
CN110707055B (zh) * | 2019-09-11 | 2021-12-28 | 长江存储科技有限责任公司 | 芯片、电子设备 |
US11522118B2 (en) | 2020-01-09 | 2022-12-06 | Northrop Grumman Systems Corporation | Superconductor structure with normal metal connection to a resistor and method of making the same |
CN113113367A (zh) * | 2020-01-13 | 2021-07-13 | 华为技术有限公司 | 芯片、芯片的制造方法和电子设备 |
KR20210120355A (ko) * | 2020-03-26 | 2021-10-07 | 엘지마그나 이파워트레인 주식회사 | 양면 냉각형 파워 모듈 |
CN115461858A (zh) * | 2020-08-04 | 2022-12-09 | 华为技术有限公司 | 多芯片堆叠封装、电子设备及制备方法 |
WO2023007383A1 (en) * | 2021-07-29 | 2023-02-02 | Marvell Asia Pte Ltd | Improving heat dissipation and electrical robustness in a three-dimensional package of stacked integrated circuits |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004172286A (ja) * | 2002-11-19 | 2004-06-17 | Kyocera Chemical Corp | 熱伝導シート |
JP2006228834A (ja) * | 2005-02-15 | 2006-08-31 | National Institute Of Advanced Industrial & Technology | 積層型集積回路装置 |
JP2007096003A (ja) * | 2005-09-29 | 2007-04-12 | Sanyo Electric Co Ltd | 回路装置 |
JP2007103413A (ja) * | 2005-09-30 | 2007-04-19 | Oki Electric Ind Co Ltd | 半導体装置及びその製造方法 |
JP2009071004A (ja) * | 2007-09-13 | 2009-04-02 | Panasonic Corp | 半導体装置とその製造方法 |
JP2009246258A (ja) * | 2008-03-31 | 2009-10-22 | Nikon Corp | 半導体装置および製造方法 |
Family Cites Families (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6020637A (en) | 1997-05-07 | 2000-02-01 | Signetics Kp Co., Ltd. | Ball grid array semiconductor package |
KR100432715B1 (ko) * | 2001-07-18 | 2004-05-24 | 엘지전자 주식회사 | 방열부재를 갖는 인쇄회로기판 및 그 제조방법 |
US7317256B2 (en) | 2005-06-01 | 2008-01-08 | Intel Corporation | Electronic packaging including die with through silicon via |
US7432592B2 (en) | 2005-10-13 | 2008-10-07 | Intel Corporation | Integrated micro-channels for 3D through silicon architectures |
KR100702968B1 (ko) | 2005-11-24 | 2007-04-03 | 삼성전자주식회사 | 플로팅된 히트 싱크를 갖는 반도체 패키지와, 그를 이용한적층 패키지 및 그의 제조 방법 |
KR100842910B1 (ko) * | 2006-06-29 | 2008-07-02 | 주식회사 하이닉스반도체 | 스택 패키지 |
US8110899B2 (en) | 2006-12-20 | 2012-02-07 | Intel Corporation | Method for incorporating existing silicon die into 3D integrated stack |
US20080153200A1 (en) * | 2006-12-22 | 2008-06-26 | Arkalgud Sitaram | Stacked semiconductor components |
US20100044853A1 (en) * | 2007-01-17 | 2010-02-25 | Nxp, B.V. | System-in-package with through substrate via holes |
US20080173792A1 (en) * | 2007-01-23 | 2008-07-24 | Advanced Chip Engineering Technology Inc. | Image sensor module and the method of the same |
US20080217761A1 (en) * | 2007-03-08 | 2008-09-11 | Advanced Chip Engineering Technology Inc. | Structure of semiconductor device package and method of the same |
US20080237844A1 (en) * | 2007-03-28 | 2008-10-02 | Aleksandar Aleksov | Microelectronic package and method of manufacturing same |
TWI338939B (en) | 2007-08-15 | 2011-03-11 | Via Tech Inc | Package module and electronic device |
US7592697B2 (en) | 2007-08-27 | 2009-09-22 | Intel Corporation | Microelectronic package and method of cooling same |
US7803714B2 (en) | 2008-03-31 | 2010-09-28 | Freescale Semiconductor, Inc. | Semiconductor through silicon vias of variable size and method of formation |
US8154134B2 (en) * | 2008-05-12 | 2012-04-10 | Texas Instruments Incorporated | Packaged electronic devices with face-up die having TSV connection to leads and die pad |
US7928563B2 (en) | 2008-05-28 | 2011-04-19 | Georgia Tech Research Corporation | 3-D ICs with microfluidic interconnects and methods of constructing same |
US8026567B2 (en) * | 2008-12-22 | 2011-09-27 | Taiwan Semiconductor Manufactuirng Co., Ltd. | Thermoelectric cooler for semiconductor devices with TSV |
US8314483B2 (en) * | 2009-01-26 | 2012-11-20 | Taiwan Semiconductor Manufacturing Company, Ltd. | On-chip heat spreader |
KR20120053675A (ko) * | 2010-11-18 | 2012-05-29 | 삼성전자주식회사 | 반도체 패키지 및 그의 제조 방법, 및 인터포저 칩 및 그의 제조 방법 |
-
2010
- 2010-07-20 US US12/840,016 patent/US8492911B2/en active Active
-
2011
- 2011-06-21 TW TW100121685A patent/TWI413222B/zh active
- 2011-07-18 CN CN2011101997470A patent/CN102339800A/zh active Pending
- 2011-07-19 KR KR1020110071262A patent/KR101795047B1/ko active IP Right Grant
- 2011-07-20 JP JP2011158573A patent/JP5885952B2/ja active Active
- 2011-07-20 EP EP11174734.1A patent/EP2410563B1/en active Active
- 2011-07-20 EP EP19218801.9A patent/EP3651194B8/en active Active
-
2013
- 2013-06-19 US US13/921,707 patent/US9054064B2/en active Active
-
2015
- 2015-04-03 US US14/678,223 patent/US20150214130A1/en not_active Abandoned
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004172286A (ja) * | 2002-11-19 | 2004-06-17 | Kyocera Chemical Corp | 熱伝導シート |
JP2006228834A (ja) * | 2005-02-15 | 2006-08-31 | National Institute Of Advanced Industrial & Technology | 積層型集積回路装置 |
JP2007096003A (ja) * | 2005-09-29 | 2007-04-12 | Sanyo Electric Co Ltd | 回路装置 |
JP2007103413A (ja) * | 2005-09-30 | 2007-04-19 | Oki Electric Ind Co Ltd | 半導体装置及びその製造方法 |
JP2009071004A (ja) * | 2007-09-13 | 2009-04-02 | Panasonic Corp | 半導体装置とその製造方法 |
JP2009246258A (ja) * | 2008-03-31 | 2009-10-22 | Nikon Corp | 半導体装置および製造方法 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2015515119A (ja) * | 2012-02-17 | 2015-05-21 | インヴェンサス・コーポレイション | 相互接続埋込み熱拡散基板 |
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