CN103688350A - 嵌入pcb基板的芯片模块 - Google Patents

嵌入pcb基板的芯片模块 Download PDF

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CN103688350A
CN103688350A CN201280009989.1A CN201280009989A CN103688350A CN 103688350 A CN103688350 A CN 103688350A CN 201280009989 A CN201280009989 A CN 201280009989A CN 103688350 A CN103688350 A CN 103688350A
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chip module
heat
back side
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semiconductor element
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B·兰格
T·朴车特
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Texas Instruments Deutschland GmbH
Texas Instruments Inc
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Abstract

本发明涉及一种半导体装置，其包括嵌入封装中的半导体管芯2，其中该管芯具有正面28，其包含被键合到封装端子的多个焊盘，并且其中管芯的背面16通过热桥耦合到封装的背面表面29。

Description

嵌入PCB基板的芯片模块
技术领域
本发明涉及包括嵌入到印刷电路板（PCB）基板中的半导体管芯的芯片模块以及提供这种芯片模块的方法。
背景技术
现代半导体装置具有高封装和功率密度，因此散热是个重要的问题。封装的热特性对于包含多个集成电路和/或半导体装置的芯片模块至关重要。芯片模块有多种不同的形式。其范围从小印刷电路板（PCBs）上的预封装集成电路到高密度互连基板上集成许多芯片管芯的完全定制芯片封装。芯片或多芯片模块也被认为是封装或芯片堆叠中的系统。
图1是根据现有技术在嵌入PCB材料之前芯片模块20的简化截面视图。薄硅管芯2具有包含多个焊盘或接触焊盘4的有源正面3，其通过非导电胶合物6粘附到PCB基板8。随后，胶合物6固化且硅管芯2被嵌入图2的PCB基板材料10内。
图2是图1的芯片模块20的另一个简化截面视图。硅管芯2被嵌入PCB基板材料10内。优选地，采用纤维增强塑料材料进行嵌入。封装的背面12用于芯片模块20内印刷线路的进一步布线。芯片模块20可是单个硅管芯2的封装或者甚至是包含多个管芯、半导体装置和/或嵌入其中的无源组件的多芯片封装。如图2中所示，在硅管芯2的有源正面上的接触焊盘4通过合适的连接14连接到印刷电路板8，且用于接触接触焊盘4的通孔用铜填充。
对于移动装置，已经开发了具有小尺寸和高封装密度的现代芯片模块。尤其对于这些现代封装，半导体管芯或多个管芯与芯片模块外侧的热耦合是重要问题。
发明内容
本发明提供具有在芯片模块的表面和嵌入到芯片模块的半导体管芯之间改善的热耦合的芯片模块。
一方面，提供包含嵌入到印刷电路板基板（PCB基板）内的半导体管芯的芯片模块。该管芯具有背面和包含多个接触焊盘的有源正面，其中管芯的背面通过热桥耦合到芯片模块的表面。优选地，管芯的背面是磨削表面，其是用于将管芯的厚度减少至预想值的磨削工艺的结果。
有利地，嵌入的半导体管芯和芯片模块的表面之间的热耦合得到改善并提供更高的散热。从而更高的集成密度或更大的功率集成成为可能。
另一方面，管芯背面的至少一部分涂有高导热涂层。热桥的内端部分与该涂层相邻。优选地，该涂层在管芯背面的整个表面上延伸。该涂层可以是封闭涂层或图案化涂层，其中根据另一个方面，图案的密度是可变的。换句话说，相比于平均密度或管芯表面剩余部分的图案的密度，管芯背面某些区域中的图案密度可更高。根据本发明的一方面，相比于其他区域，产生更多热量的区域内图案的密度更高，例如在包含功率晶体管的区域内图案密度增加。用于涂层的优选材料是金属，优选像铜一样的高导热金属。有利地，在晶片背面的额外的铜金属化改善从管芯到热桥的散热。优选地，在磨削晶片至其最终厚度后沉淀铜层。封闭层提供最高的散热；然而，它也可对管芯施加机械应力。结构化层是有利的，这是因为其较低的机械应力影响。优选的图案层是点或交叉阴影线（hatched line）。另外，高导热涂层可限于管芯背面的某些区域，优选地，提供高热输出的区域，例如输出晶体管。
另一方面，热桥是在至少管芯背面的整个表面上横向延伸的整体块。优选地，该整体块由例如用高导热颗粒填充的高导热材料制成。该整体块的材料可填充金属颗粒或金属簇，进一步优选地，采用如铜的高导热金属。有利地，整体块为半导体管芯的背面和芯片模块的外侧的热传递提供高效的热桥。另外，整体块的产生可简单地整合到嵌入工艺中。
根据另一个实施例，热桥包括多个高导热通道，其中每个通道提供管芯背面和芯片模块表面之间的热桥。优选地，高导热通道是填充以高导热材料的通孔，该材料优选为如铜的高导热金属。该通孔或钻孔可从表面钻孔，优先地从芯片模块的背面表面向下直到管芯或至少向下到接近管芯背面表面的区域。例如可通过机械钻孔或激光钻孔执行钻孔。
根据另一个有利的方面，芯片模块表面的至少一部分被涂有高导热外部涂层。热桥的外端部分邻接外部涂层。芯片模块的外部涂层允许改善从封装到散热器的散热，例如用户印刷电路板或类似部件。该涂层优选地由高导热金属制成；优选的金属是铜，这是由于其高导热性。背面涂层或镀层可通过适合的胶合物或焊接耦合到散热器。
另一方面，半导体管芯的背面可通过热桥电接触。有利地，这种电接触可通过用于填充通孔或钻孔的金属或由用于提供整体块的高导热材料而被提供。
根据另一个方面，提供用于提供芯片模块的方法。该方法包括以下步骤：接触半导体管芯的正面的接触焊盘并将半导体管芯嵌入PCB基板。在避开半导体管芯正面的PCB基板的背面钻多个通孔，以及用高导热材料填充通孔从而形成管芯背面和芯片模块表面之间的热桥。优选地，采用例如铜的高导热金属。
应理解，在电接触管芯的有源正面之前，避开其有源正面的半导体管芯的背面可热耦合/接触到芯片模块的外侧表面。
根据有利的实施例，所述方法还包括在半导体管芯背面的至少一部分上涂层以形成高导热层的步骤。
附图说明
图1和2是根据现有技术的示例芯片模块的示意性截面视图；
图3到8是在封装工艺的不同阶段上芯片模块的简化截面视图；
图9是安装在用户印刷电路板上的芯片模块的另一简化截面视图；以及
图10和11是根据另一个实施例的芯片模块的简化截面视图，其中热桥是整体块。
具体实施方式
图3示出根据实施本发明原理的示例实施例的芯片模块20。具有多个接触焊盘4的半导体管芯2通过采用适合的胶合物6安装在印刷电路板（PCB）基板8上。在胶合物6中如使用激光钻孔或打眼，并随后使用铜填充以提供适合的连接14。管芯2的磨削背面16涂有高导热涂层18。优选地，该涂层是金属涂层，其中铜是优选的金属。如图3所示，该涂层在半导体管芯2的整个背面16上延伸。然而，也可在例如点或交叉阴影线的辅助下图案化涂层18。涂层也可被限制于半导体管芯2的背面16的特定区域，该区域优选地邻近管芯2的热产生部分，例如功率晶体管。这是因为功率晶体管的热损失应扩散至散热器从而防止过热。
在图4中所示的进一步的步骤中，图3的结构被嵌入适合的PCB基板材料10中。芯片模块20的背面12被涂上适合的外部涂层22，其优选为高导热层，例如采用铜层。外部涂层22可在封装的整个表面上延伸或可被图案化。有利地，图案层可用于在后续工艺步骤中提供额外的电连接。可替代地，涂层可限制在封装背面12的特定部分或区域。
图5示出进一步工艺步骤后的图4的芯片模块20，其中在外部涂层22和PCB基板材料10上向下打眼或钻孔24至半导体管芯2的背面涂层18。可通过机械打孔、激光打孔或它们的组合方式进行钻孔或通孔24的打孔。
在进一步的工艺步骤中，如图6中所示，通孔24被填充以高导热填充材料26，优选地使用金属填充它们，例如使用铜。所填充的通孔24（即用填充材料26填充的通孔24）分别在半导体管芯2和芯片模块20的背面12以及它的外部涂层22之间提供热桥。
图7示出进一步的工艺步骤。芯片模块20的有源正面28以传统的方式构造。在背面29上完全留下铜外部涂层22以及高导电填充材料26。为了更好的热传递，为了减少机械应力或为了额外的电信号布线，也有可能分割封装的背面29。另外，芯片模块20的背面29和半导体管芯2的背面16之间的电接触可由经填充的通孔24提供。优选铜的高导热填充材料26也适合用于同时提供电接触。
图8是根据本发明实施例的芯片模块22的另一个截面视图。与前面的图相比，所示的芯片模块20被上下倒置，即热桥位于底部侧。半导体管芯2的焊盘4连接到封装内的接触层30。在该层30上有另一空间，其用于芯片模块22的其他组件。该另一空间也可用于芯片模块20内的电信号布线和互连或用于连接管芯2的焊盘4。
芯片模块20可以两种方法中的任一种组装。在第一种方法中，如图3-7中所示，将管芯2安置在PCB基板8上且提供电耦合和热耦合。在这些制造步骤之后，如图8所示，翻转PCB基板8然后通过倒置其热耦合背面16而将其嵌入芯片模块20中。可替代地，在第二种方法中，在电接触半导体管芯2之前形成热耦合。因此，管芯2可嵌入芯片模块20中且其磨削背面倒置以及通过打孔和填充通孔制造热桥。然后，接触管芯2的有源正面上的接触焊盘4。
在图9中，图8的芯片模块20安装在用户印刷电路板35上。通过适合的焊接32将芯片模块20焊接到散热器34上，该散热器是用户印刷电路板35的一部分。散热器可是嵌入印刷电路板35的金属块。通孔24内的高导热材料26在半导体管芯2的背面16和散热器24之间提供热桥。
根据图10中所示的另一个实施例，填充的PCB基板材料36用于在半导体管芯2的背面涂层18和芯片模块22的外部表面之间提供热桥。为了获得预想的热特性，优选用金属颗粒或簇填充高导热PCB基板材料36。也可通过高导热糊料提供热桥38。嵌入工艺本身是可与传统嵌入工艺相比较的。结果所得的封装，即所得的芯片模块22如图11中所示。整体块38分别在半导体管芯2的背面和封装或芯片模块20的背面12之间提供热耦合。外部涂层22可沉积到封装的背面12以改善散热。
如已提到的，可以在电接触半导体管芯2之前形成热耦合。有利地，透明的高导热PCB基板材料36可应用于制造热桥38。这允许将半导体管芯2对准到用于电接触有源正面的确切位置。
本领域的技术人员将意识到，在所要求保护的发明的范围内，可对所描述的实施例做出改变，并且许多其他的实施例也是可能的。

Claims (10)

1.一种芯片模块，包含嵌入到印刷电路板基板中的半导体管芯，其中所述管芯具有背面和包含多个接触焊盘的有源正面，其中所述管芯的背面通过热桥耦合到所述芯片模块的表面。
2.根据权利要求1所述的芯片模块，其中所述管芯的背面的至少部分涂有高导热涂层且所述热桥的内端部分与所述涂层相邻。
3.根据权利要求2所述的芯片模块，其中所述热桥是在至少所述管芯的背面的整个表面上横向延伸的整体块。
4.根据权利要求3所述的芯片模块，其中所述整体块由填充高导热材料的材料制成。
5.根据权利要求1所述的芯片模块，其中所述热桥包括多个高导热通道，每个所述高导热通道在所述管芯的背面和所述芯片模块的表面之间提供热桥。
6.根据权利要求5所述的芯片模块，其中所述高导热通道是用高导热材料填充的通孔。
7.根据权利要求1所述的芯片模块，其中所述芯片模块表面的至少部分涂有高导热外部涂层且所述热桥的外端部分与所述外部涂层相邻。
8.根据权利要求1所述的芯片模块，其中通过所述热桥提供所述芯片模块的表面和所述管芯的背面之间的电接触。
9.一种提供芯片模块的方法，其包括以下步骤：
接触在半导体管芯的正面的接触焊盘并将所述半导体管芯嵌入印刷电路板基板；
在所述印刷电路板基板的表面中钻多个通孔，所述表面避开所述半导体管芯的所述正面；以及
用高导热材料填充所述通孔从而在所述管芯的背面和所述芯片模块的表面之间形成热桥。
10.根据权利要求8所述的方法，其还包括涂覆所述半导体管芯的背面的至少部分从而形成高导热层的步骤。
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