CN110268511A - 一种三极管的封装方法及三极管 - Google Patents

一种三极管的封装方法及三极管 Download PDF

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Publication number
CN110268511A
CN110268511A CN201780077309.2A CN201780077309A CN110268511A CN 110268511 A CN110268511 A CN 110268511A CN 201780077309 A CN201780077309 A CN 201780077309A CN 110268511 A CN110268511 A CN 110268511A
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China
Prior art keywords
pad
triode
layer
surface metal
chip
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CN201780077309.2A
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English (en)
Inventor
黄冕
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Shenzhen Siptory Technologies Co ltd
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Shenzhen Siptory Technologies Co ltd
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Priority claimed from CN201611202022.1A external-priority patent/CN106783631B/zh
Priority claimed from CN201611205111.1A external-priority patent/CN106601699A/zh
Priority claimed from CN201611202117.3A external-priority patent/CN106783632B/zh
Application filed by Shenzhen Siptory Technologies Co ltd filed Critical Shenzhen Siptory Technologies Co ltd
Publication of CN110268511A publication Critical patent/CN110268511A/zh
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Abstract

提供了一种三极管的封装方法及三极管，用于解决现有三极管的占用空间大，封装效率低的问题。方法包括：提供载体(10)，并在载体的至少一个面上覆盖表面金属层(11)；在表面金属层的线路图形区域覆盖抗蚀膜(12)；对表面金属层的非线路图形区域进行电镀，形成至少一个第一焊盘(13)；在至少一个第一焊盘上焊接芯片(14)；在芯片上焊接第二焊盘(15)形成三极管模板；采用复合材料(16)对三极管模板进行塑封处理；在第二焊盘和至少一个第一焊盘的垂直方向上钻盲孔(17)，并将盲孔处理成金属化盲孔：对金属化盲孔经过图形制作形成线路闭合回路或非闭合回路，封装出三极管。

Description

PCT国内申请，说明书已公开。

Claims (3)

  1. PCT国内申请，权利要求书已公开。
CN201780077309.2A 2016-12-22 2017-12-21 一种三极管的封装方法及三极管 Pending CN110268511A (zh)

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CN115954284A (zh) * 2023-03-15 2023-04-11 合肥矽迈微电子科技有限公司 一种mosfet芯片的封装工艺

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