KR101765928B1 - 반도체 소자 및 그 제조 방법 - Google Patents

반도체 소자 및 그 제조 방법 Download PDF

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Publication number
KR101765928B1
KR101765928B1 KR1020110022493A KR20110022493A KR101765928B1 KR 101765928 B1 KR101765928 B1 KR 101765928B1 KR 1020110022493 A KR1020110022493 A KR 1020110022493A KR 20110022493 A KR20110022493 A KR 20110022493A KR 101765928 B1 KR101765928 B1 KR 101765928B1
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South Korea
Prior art keywords
film
insulating film
plug metal
separation groove
semiconductor device
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KR1020110022493A
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English (en)
Korean (ko)
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KR20110103881A (ko
Inventor
도모미츠 리사키
쇼지 나카니시
고이치 시마자키
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에스아이아이 세미컨덕터 가부시키가이샤
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Publication of KR20110103881A publication Critical patent/KR20110103881A/ko
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/40—Encapsulations, e.g. protective coatings characterised by their materials
    • H10W74/47—Encapsulations, e.g. protective coatings characterised by their materials comprising organic materials, e.g. plastics or resins
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/013—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator
    • H10D64/01302—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H10D64/01354—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon passivation or protection of the electrode, e.g. using re-oxidation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/402—Chemomechanical polishing [CMP] of semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P54/00—Cutting or separating of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7402—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W42/00—Arrangements for protection of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W42/00—Arrangements for protection of devices
    • H10W42/121—Arrangements for protection of devices protecting against mechanical damage
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/015—Manufacture or treatment of bond wires

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  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Dicing (AREA)
  • Semiconductor Integrated Circuits (AREA)
KR1020110022493A 2010-03-15 2011-03-14 반도체 소자 및 그 제조 방법 Active KR101765928B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2010-058449 2010-03-15
JP2010058449A JP5638818B2 (ja) 2010-03-15 2010-03-15 半導体装置およびその製造方法

Publications (2)

Publication Number Publication Date
KR20110103881A KR20110103881A (ko) 2011-09-21
KR101765928B1 true KR101765928B1 (ko) 2017-08-07

Family

ID=44559162

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020110022493A Active KR101765928B1 (ko) 2010-03-15 2011-03-14 반도체 소자 및 그 제조 방법

Country Status (5)

Country Link
US (1) US9299629B2 (enExample)
JP (1) JP5638818B2 (enExample)
KR (1) KR101765928B1 (enExample)
CN (1) CN102194773B (enExample)
TW (1) TWI527104B (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017028056A (ja) * 2015-07-21 2017-02-02 トヨタ自動車株式会社 半導体装置の製造方法
KR102428328B1 (ko) * 2017-07-26 2022-08-03 삼성전자주식회사 반도체 장치
JP7240149B2 (ja) * 2018-08-29 2023-03-15 キオクシア株式会社 半導体装置
KR20230031712A (ko) 2021-08-27 2023-03-07 삼성전자주식회사 크랙 방지 구조를 포함한 반도체 소자

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006148007A (ja) * 2004-11-24 2006-06-08 Sharp Corp 半導体装置の製造方法とその製造方法によって製造された半導体装置

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5136354A (en) * 1989-04-13 1992-08-04 Seiko Epson Corporation Semiconductor device wafer with interlayer insulating film covering the scribe lines
JPH0750700B2 (ja) * 1989-06-27 1995-05-31 三菱電機株式会社 半導体チップの製造方法
JPH05315076A (ja) * 1992-05-14 1993-11-26 Toshiba Corp 端面発光型ｅｌ素子のピクセル形成方法
JP3182891B2 (ja) * 1992-07-03 2001-07-03 セイコーエプソン株式会社 半導体装置
JP3269536B2 (ja) * 1993-02-19 2002-03-25 株式会社デンソー 半導体装置
JP2894165B2 (ja) * 1993-07-24 1999-05-24 ヤマハ株式会社 半導体装置
US7087452B2 (en) * 2003-04-22 2006-08-08 Intel Corporation Edge arrangements for integrated circuit chips
US7566634B2 (en) * 2004-09-24 2009-07-28 Interuniversitair Microelektronica Centrum (Imec) Method for chip singulation
US7615469B2 (en) * 2007-05-25 2009-11-10 Semiconductor Components Industries, L.L.C. Edge seal for a semiconductor device and method therefor

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006148007A (ja) * 2004-11-24 2006-06-08 Sharp Corp 半導体装置の製造方法とその製造方法によって製造された半導体装置

Also Published As

Publication number Publication date
JP2011192846A (ja) 2011-09-29
TW201203338A (en) 2012-01-16
CN102194773A (zh) 2011-09-21
US20110221043A1 (en) 2011-09-15
KR20110103881A (ko) 2011-09-21
US9299629B2 (en) 2016-03-29
CN102194773B (zh) 2015-08-19
TWI527104B (zh) 2016-03-21
JP5638818B2 (ja) 2014-12-10

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