KR101762463B1 - 웨이퍼 공정 중에 반도체 웨이퍼들에 전해지는 오염물의 양을 모니터하는 방법 - Google Patents

웨이퍼 공정 중에 반도체 웨이퍼들에 전해지는 오염물의 양을 모니터하는 방법 Download PDF

Info

Publication number
KR101762463B1
KR101762463B1 KR1020127016382A KR20127016382A KR101762463B1 KR 101762463 B1 KR101762463 B1 KR 101762463B1 KR 1020127016382 A KR1020127016382 A KR 1020127016382A KR 20127016382 A KR20127016382 A KR 20127016382A KR 101762463 B1 KR101762463 B1 KR 101762463B1
Authority
KR
South Korea
Prior art keywords
delete delete
soi structure
silicon layer
metal contaminants
metal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020127016382A
Other languages
English (en)
Korean (ko)
Other versions
KR20120099733A (ko
Inventor
제프리 엘. 리버트
루 페이
Original Assignee
썬에디슨, 인크.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 썬에디슨, 인크. filed Critical 썬에디슨, 인크.
Publication of KR20120099733A publication Critical patent/KR20120099733A/ko
Application granted granted Critical
Publication of KR101762463B1 publication Critical patent/KR101762463B1/ko
Assigned to 글로벌웨이퍼스 씨오., 엘티디. reassignment 글로벌웨이퍼스 씨오., 엘티디. 권리의 전부이전등록 Assignors: 썬에디슨, 인크.
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0604—Process monitoring, e.g. flow or thickness monitoring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
    • H10P74/235—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes comprising optical enhancement of defects or not-directly-visible states

Landscapes

  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
KR1020127016382A 2009-12-23 2010-12-17 웨이퍼 공정 중에 반도체 웨이퍼들에 전해지는 오염물의 양을 모니터하는 방법 Active KR101762463B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US28987809P 2009-12-23 2009-12-23
US61/289,878 2009-12-23
PCT/IB2010/055925 WO2011077344A2 (en) 2009-12-23 2010-12-17 Method for monitoring the amount of contamination imparted into semiconductor wafers during wafer processing

Publications (2)

Publication Number Publication Date
KR20120099733A KR20120099733A (ko) 2012-09-11
KR101762463B1 true KR101762463B1 (ko) 2017-07-27

Family

ID=43797704

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020127016382A Active KR101762463B1 (ko) 2009-12-23 2010-12-17 웨이퍼 공정 중에 반도체 웨이퍼들에 전해지는 오염물의 양을 모니터하는 방법

Country Status (8)

Country Link
US (4) US8143078B2 (https=)
EP (1) EP2517234A2 (https=)
JP (1) JP2013516063A (https=)
KR (1) KR101762463B1 (https=)
CN (1) CN102687260A (https=)
SG (1) SG181427A1 (https=)
TW (1) TWI528482B (https=)
WO (1) WO2011077344A2 (https=)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5407473B2 (ja) * 2009-03-25 2014-02-05 株式会社Ｓｕｍｃｏ シリコンウェーハの製造方法
US9343379B2 (en) * 2011-10-14 2016-05-17 Sunedison Semiconductor Limited Method to delineate crystal related defects
JP5949303B2 (ja) * 2012-08-09 2016-07-06 株式会社Sumco エピタキシャル成長炉の評価方法およびエピタキシャルウェーハの製造方法
US8835309B2 (en) * 2012-09-13 2014-09-16 International Business Machines Corporation Forming nickel—platinum alloy self-aligned silicide contacts
CN104078378A (zh) * 2014-07-02 2014-10-01 武汉新芯集成电路制造有限公司 一种检测金属污染的方法
JP5783312B1 (ja) 2014-09-18 2015-09-24 株式会社Sumco エピタキシャルシリコンウェーハの製造方法及び気相成長装置
TWI559424B (zh) * 2015-03-05 2016-11-21 力晶科技股份有限公司 半導體晶圓的金屬汙染即時監控方法
CN104713588B (zh) * 2015-03-20 2017-03-29 上海华力微电子有限公司 一种监控电子显微镜真空腔体洁净度的方法
CN106206334B (zh) * 2015-05-07 2019-01-22 中芯国际集成电路制造(上海)有限公司 监测晶圆以及金属污染的监测方法
CN107301960A (zh) * 2016-04-15 2017-10-27 上海新昇半导体科技有限公司 晶圆金属污染的评估方法
WO2018198797A1 (ja) * 2017-04-25 2018-11-01 株式会社Sumco シリコン単結晶の製造方法、エピタキシャルシリコンウェーハの製造方法、シリコン単結晶、および、エピタキシャルシリコンウェーハ
US10504805B2 (en) * 2017-08-24 2019-12-10 Applied Materials Israel Ltd. Method of examining defects in a semiconductor specimen and system thereof
GB2580858B (en) * 2018-09-07 2021-07-21 Memsstar Ltd A method for detecting defects in thin film layers
US10714329B2 (en) * 2018-09-28 2020-07-14 Taiwan Semiconductor Manufacturing Co., Ltd. Pre-clean for contacts
CN111106024B (zh) * 2018-10-26 2023-09-29 长鑫存储技术有限公司 流场分布的检测方法
US11211272B2 (en) * 2019-09-25 2021-12-28 Micron Technology, Inc. Contaminant detection tools and related methods
CN111344852B (zh) * 2020-02-10 2021-08-31 长江存储科技有限责任公司 金属污染测试装置和方法
US12278124B2 (en) * 2021-10-28 2025-04-15 Applied Materials, Inc. Model-based controlled load lock pumping scheme
CN115793416B (zh) * 2023-01-16 2023-04-25 广州粤芯半导体技术有限公司 半导体器件制备方法及监测光刻工艺化学品杂质的方法
US12467877B2 (en) 2023-01-31 2025-11-11 Globalwafers Co., Ltd. Methods for detecting defects in a single crystal silicon structure
CN116387174B (zh) * 2023-03-27 2024-11-22 马鞍山芯乔科技有限公司 一种晶圆传递夹具污染自检测装置及其检测工艺

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000040723A (ja) 1998-07-23 2000-02-08 Shin Etsu Handotai Co Ltd 金属不純物検査用ウエーハ及び該ウエーハを用いた金属不純物検査方法

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2617798B2 (ja) * 1989-09-22 1997-06-04 三菱電機株式会社 積層型半導体装置およびその製造方法
JPH07106512A (ja) * 1993-10-04 1995-04-21 Sharp Corp 分子イオン注入を用いたｓｉｍｏｘ処理方法
JP3544280B2 (ja) * 1997-03-27 2004-07-21 株式会社半導体エネルギー研究所 半導体装置の作製方法
EP0869352A1 (en) * 1997-04-03 1998-10-07 Applied Materials, Inc. Method for detecting metallic contaminants in submicron silicon surface layers of a semiconductor wafer
US6033974A (en) * 1997-05-12 2000-03-07 Silicon Genesis Corporation Method for controlled cleaving process
JP3917245B2 (ja) 1997-07-10 2007-05-23 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 シリコンウェーハ及び熱処理用ボート、チューブの評価方法
JPH1174493A (ja) * 1997-08-29 1999-03-16 Sumitomo Metal Ind Ltd Ｓｏｉウエーハの欠陥検査方法
JP3704426B2 (ja) * 1997-10-31 2005-10-12 信越半導体株式会社 金属不純物析出履歴の評価方法
JP2000164476A (ja) * 1998-11-26 2000-06-16 Mitsubishi Electric Corp 半導体製造工程の管理方法、半導体製造装置の管理方法、及び半導体製造環境の管理方法
US6284384B1 (en) * 1998-12-09 2001-09-04 Memc Electronic Materials, Inc. Epitaxial silicon wafer with intrinsic gettering
JP3899715B2 (ja) * 1998-12-24 2007-03-28 株式会社Ｓｕｍｃｏ シリコンウェーハ表面の検査方法
JP2001050874A (ja) * 1999-08-04 2001-02-23 Mitsubishi Electric Corp 半導体基板の検査方法
JP2002110688A (ja) * 2000-09-29 2002-04-12 Canon Inc Ｓｏｉの熱処理方法及び製造方法
US6528335B2 (en) * 2001-02-14 2003-03-04 International Business Machines Corporation Electrical method for assessing yield-limiting asperities in silicon-on-insulator wafers
JP2003288112A (ja) * 2002-03-28 2003-10-10 Matsushita Electric Ind Co Ltd 生産管理方法
JP4252258B2 (ja) * 2002-05-27 2009-04-08 株式会社Ｓｕｍｃｏ Ｓｏｉ基板のｈｆ欠陥評価方法
US6825050B2 (en) * 2002-06-07 2004-11-30 Lam Research Corporation Integrated stepwise statistical process control in a plasma processing system
EP1369682A3 (en) 2002-06-07 2004-12-01 Interuniversitair Microelektronica Centrum Vzw A method for wafer level detection of integrity of a layer
US7016028B2 (en) * 2002-06-07 2006-03-21 Interuniversitair Microelektronica Centrum (Imec) Method and apparatus for defect detection
US20040241867A1 (en) * 2003-01-17 2004-12-02 Jones Mark L. Method of analyzing a wafer for metal impurities
US7570353B2 (en) * 2005-12-16 2009-08-04 Infineon Technologies Ag Fabrication and test methods and systems
US7517706B2 (en) * 2006-07-21 2009-04-14 Sumco Corporation Method for evaluating quality of semiconductor substrate and method for manufacturing semiconductor substrate

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000040723A (ja) 1998-07-23 2000-02-08 Shin Etsu Handotai Co Ltd 金属不純物検査用ウエーハ及び該ウエーハを用いた金属不純物検査方法

Also Published As

Publication number Publication date
WO2011077344A2 (en) 2011-06-30
US20110212550A1 (en) 2011-09-01
TW201142969A (en) 2011-12-01
US20120115258A1 (en) 2012-05-10
KR20120099733A (ko) 2012-09-11
TWI528482B (zh) 2016-04-01
WO2011077344A3 (en) 2011-10-13
SG181427A1 (en) 2012-07-30
US8143078B2 (en) 2012-03-27
US20110212547A1 (en) 2011-09-01
US8822242B2 (en) 2014-09-02
EP2517234A2 (en) 2012-10-31
CN102687260A (zh) 2012-09-19
JP2013516063A (ja) 2013-05-09
US20110151592A1 (en) 2011-06-23

Similar Documents

Publication Publication Date Title
KR101762463B1 (ko) 웨이퍼 공정 중에 반도체 웨이퍼들에 전해지는 오염물의 양을 모니터하는 방법
US8796116B2 (en) Methods for reducing the metal content in the device layer of SOI structures and SOI structures produced by such methods
JP6373354B2 (ja) ライトポイント欠陥と表面粗さを低減するための半導体オンインシュレータウエハの製造方法
JP2014508405A5 (https=)
WO2023154644A1 (en) Methods for stripping and cleaning semiconductor structures
JP3896919B2 (ja) シリコンウエーハのＮｉ汚染の評価方法
JP2021082828A (ja) 基板の表面の金属汚染物を減少させるための方法
JP5689218B2 (ja) 支持基板が透明なｓｏｉ基板の欠陥検出方法
KR101063068B1 (ko) 웨이퍼 표면처리 공정이 개선된 ｄｓｏｄ 분석방법
KR100501110B1 (ko) 실리콘웨이퍼의 표면 근방 결함 분석 방법
JP2005228848A (ja) Ｓｉｍｏｘウェーハの検査方法及びそのｓｉｍｏｘウェーハの製造方法
JP2004349420A (ja) Ｓｏｉウェーハの検査方法
JPWO2000014783A1 (ja) エピタキシャルウェーハ及びその製造方法

Legal Events

Date Code Title Description
PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

PN2301 Change of applicant

St.27 status event code: A-3-3-R10-R13-asn-PN2301

St.27 status event code: A-3-3-R10-R11-asn-PN2301

A201 Request for examination
E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000

P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

R18-X000 Changes to party contact information recorded

St.27 status event code: A-3-3-R10-R18-oth-X000

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U12-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

PN2301 Change of applicant

St.27 status event code: A-5-5-R10-R11-asn-PN2301

PN2301 Change of applicant

St.27 status event code: A-5-5-R10-R14-asn-PN2301

FPAY Annual fee payment

Payment date: 20200710

Year of fee payment: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

FPAY Annual fee payment

Payment date: 20210713

Year of fee payment: 5

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

FPAY Annual fee payment

Payment date: 20220706

Year of fee payment: 6

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 6

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 7

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 8

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 9

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000