CN102687260A - 用于监视在晶片处理期间赋给半导体晶片的污染物的量的方法 - Google Patents

用于监视在晶片处理期间赋给半导体晶片的污染物的量的方法 Download PDF

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Publication number
CN102687260A
CN102687260A CN2010800580774A CN201080058077A CN102687260A CN 102687260 A CN102687260 A CN 102687260A CN 2010800580774 A CN2010800580774 A CN 2010800580774A CN 201080058077 A CN201080058077 A CN 201080058077A CN 102687260 A CN102687260 A CN 102687260A
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CN
China
Prior art keywords
sec
silicon
less
metal
wafer
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Pending
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CN2010800580774A
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English (en)
Chinese (zh)
Inventor
J·L·利伯特
L·费
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SunEdison Inc
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SunEdison Inc
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Publication of CN102687260A publication Critical patent/CN102687260A/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0604—Process monitoring, e.g. flow or thickness monitoring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
    • H10P74/235—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes comprising optical enhancement of defects or not-directly-visible states

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  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
CN2010800580774A 2009-12-23 2010-12-17 用于监视在晶片处理期间赋给半导体晶片的污染物的量的方法 Pending CN102687260A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US28987809P 2009-12-23 2009-12-23
US61/289,878 2009-12-23
PCT/IB2010/055925 WO2011077344A2 (en) 2009-12-23 2010-12-17 Method for monitoring the amount of contamination imparted into semiconductor wafers during wafer processing

Publications (1)

Publication Number Publication Date
CN102687260A true CN102687260A (zh) 2012-09-19

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ID=43797704

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2010800580774A Pending CN102687260A (zh) 2009-12-23 2010-12-17 用于监视在晶片处理期间赋给半导体晶片的污染物的量的方法

Country Status (8)

Country Link
US (4) US8143078B2 (https=)
EP (1) EP2517234A2 (https=)
JP (1) JP2013516063A (https=)
KR (1) KR101762463B1 (https=)
CN (1) CN102687260A (https=)
SG (1) SG181427A1 (https=)
TW (1) TWI528482B (https=)
WO (1) WO2011077344A2 (https=)

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CN106206334A (zh) * 2015-05-07 2016-12-07 中芯国际集成电路制造(上海)有限公司 监测晶圆以及金属污染的监测方法
CN111106024A (zh) * 2018-10-26 2020-05-05 长鑫存储技术有限公司 流场分布的检测方法
CN111344852A (zh) * 2020-02-10 2020-06-26 长江存储科技有限责任公司 金属污染测试装置和方法
CN115793416A (zh) * 2023-01-16 2023-03-14 广州粤芯半导体技术有限公司 半导体器件制备方法及监测光刻工艺化学品杂质的方法
CN116387174A (zh) * 2023-03-27 2023-07-04 马鞍山芯乔科技有限公司 一种晶圆传递夹具污染自检测装置及其检测工艺

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JP5407473B2 (ja) * 2009-03-25 2014-02-05 株式会社Ｓｕｍｃｏ シリコンウェーハの製造方法
US9343379B2 (en) * 2011-10-14 2016-05-17 Sunedison Semiconductor Limited Method to delineate crystal related defects
JP5949303B2 (ja) * 2012-08-09 2016-07-06 株式会社Sumco エピタキシャル成長炉の評価方法およびエピタキシャルウェーハの製造方法
US8835309B2 (en) * 2012-09-13 2014-09-16 International Business Machines Corporation Forming nickel—platinum alloy self-aligned silicide contacts
CN104078378A (zh) * 2014-07-02 2014-10-01 武汉新芯集成电路制造有限公司 一种检测金属污染的方法
JP5783312B1 (ja) 2014-09-18 2015-09-24 株式会社Sumco エピタキシャルシリコンウェーハの製造方法及び気相成長装置
TWI559424B (zh) * 2015-03-05 2016-11-21 力晶科技股份有限公司 半導體晶圓的金屬汙染即時監控方法
CN104713588B (zh) * 2015-03-20 2017-03-29 上海华力微电子有限公司 一种监控电子显微镜真空腔体洁净度的方法
CN107301960A (zh) * 2016-04-15 2017-10-27 上海新昇半导体科技有限公司 晶圆金属污染的评估方法
WO2018198797A1 (ja) * 2017-04-25 2018-11-01 株式会社Sumco シリコン単結晶の製造方法、エピタキシャルシリコンウェーハの製造方法、シリコン単結晶、および、エピタキシャルシリコンウェーハ
US10504805B2 (en) * 2017-08-24 2019-12-10 Applied Materials Israel Ltd. Method of examining defects in a semiconductor specimen and system thereof
GB2580858B (en) * 2018-09-07 2021-07-21 Memsstar Ltd A method for detecting defects in thin film layers
US10714329B2 (en) * 2018-09-28 2020-07-14 Taiwan Semiconductor Manufacturing Co., Ltd. Pre-clean for contacts
US11211272B2 (en) * 2019-09-25 2021-12-28 Micron Technology, Inc. Contaminant detection tools and related methods
US12278124B2 (en) * 2021-10-28 2025-04-15 Applied Materials, Inc. Model-based controlled load lock pumping scheme
US12467877B2 (en) 2023-01-31 2025-11-11 Globalwafers Co., Ltd. Methods for detecting defects in a single crystal silicon structure

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JP2000164476A (ja) * 1998-11-26 2000-06-16 Mitsubishi Electric Corp 半導体製造工程の管理方法、半導体製造装置の管理方法、及び半導体製造環境の管理方法
US6613638B2 (en) * 2000-09-29 2003-09-02 Canon Kabushiki Kaisha Soi annealing method for reducing HF defects, with lamp, without crystal original particle (COP)
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EP0869352A1 (en) * 1997-04-03 1998-10-07 Applied Materials, Inc. Method for detecting metallic contaminants in submicron silicon surface layers of a semiconductor wafer
JP2000164476A (ja) * 1998-11-26 2000-06-16 Mitsubishi Electric Corp 半導体製造工程の管理方法、半導体製造装置の管理方法、及び半導体製造環境の管理方法
US6613638B2 (en) * 2000-09-29 2003-09-02 Canon Kabushiki Kaisha Soi annealing method for reducing HF defects, with lamp, without crystal original particle (COP)
US20040241867A1 (en) * 2003-01-17 2004-12-02 Jones Mark L. Method of analyzing a wafer for metal impurities

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106206334A (zh) * 2015-05-07 2016-12-07 中芯国际集成电路制造(上海)有限公司 监测晶圆以及金属污染的监测方法
CN106206334B (zh) * 2015-05-07 2019-01-22 中芯国际集成电路制造(上海)有限公司 监测晶圆以及金属污染的监测方法
CN111106024A (zh) * 2018-10-26 2020-05-05 长鑫存储技术有限公司 流场分布的检测方法
CN111106024B (zh) * 2018-10-26 2023-09-29 长鑫存储技术有限公司 流场分布的检测方法
CN111344852A (zh) * 2020-02-10 2020-06-26 长江存储科技有限责任公司 金属污染测试装置和方法
WO2021159225A1 (en) * 2020-02-10 2021-08-19 Yangtze Memory Technologies Co., Ltd. Metal contamination test apparatus and method
CN111344852B (zh) * 2020-02-10 2021-08-31 长江存储科技有限责任公司 金属污染测试装置和方法
US11302524B2 (en) 2020-02-10 2022-04-12 Yangtze Memory Technologies Co., Ltd. Metal contamination test apparatus and method
CN115793416A (zh) * 2023-01-16 2023-03-14 广州粤芯半导体技术有限公司 半导体器件制备方法及监测光刻工艺化学品杂质的方法
CN116387174A (zh) * 2023-03-27 2023-07-04 马鞍山芯乔科技有限公司 一种晶圆传递夹具污染自检测装置及其检测工艺
CN116387174B (zh) * 2023-03-27 2024-11-22 马鞍山芯乔科技有限公司 一种晶圆传递夹具污染自检测装置及其检测工艺

Also Published As

Publication number Publication date
WO2011077344A2 (en) 2011-06-30
US20110212550A1 (en) 2011-09-01
TW201142969A (en) 2011-12-01
US20120115258A1 (en) 2012-05-10
KR20120099733A (ko) 2012-09-11
TWI528482B (zh) 2016-04-01
KR101762463B1 (ko) 2017-07-27
WO2011077344A3 (en) 2011-10-13
SG181427A1 (en) 2012-07-30
US8143078B2 (en) 2012-03-27
US20110212547A1 (en) 2011-09-01
US8822242B2 (en) 2014-09-02
EP2517234A2 (en) 2012-10-31
JP2013516063A (ja) 2013-05-09
US20110151592A1 (en) 2011-06-23

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Application publication date: 20120919