KR101606217B1 - 에너지선 경화형 중합체, 에너지선 경화형 점착제 조성물, 점착 시트 및 반도체 웨이퍼의 가공방법 - Google Patents

에너지선 경화형 중합체, 에너지선 경화형 점착제 조성물, 점착 시트 및 반도체 웨이퍼의 가공방법 Download PDF

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KR101606217B1
KR101606217B1 KR1020107021627A KR20107021627A KR101606217B1 KR 101606217 B1 KR101606217 B1 KR 101606217B1 KR 1020107021627 A KR1020107021627 A KR 1020107021627A KR 20107021627 A KR20107021627 A KR 20107021627A KR 101606217 B1 KR101606217 B1 KR 101606217B1
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sensitive adhesive
energy ray
pressure
group
radical generator
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Korean (ko)
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KR20100138979A (ko
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준 마에다
케이코 타나카
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린텍 코포레이션
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836Wafer tapes, e.g. grinding or dicing support tapes
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08FMACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F220/00Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
    • C08F220/02Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
    • C08F220/10Esters
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08FMACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F220/00Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
    • C08F220/02Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
    • C08F220/10Esters
    • C08F220/12Esters of monohydric alcohols or phenols
    • C08F220/16Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms
    • C08F220/18Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms with acrylic or methacrylic acids
    • C08F220/1804C4-(meth)acrylate, e.g. butyl (meth)acrylate, isobutyl (meth)acrylate or tert-butyl (meth)acrylate
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J201/00Adhesives based on unspecified macromolecular compounds
    • C09J201/02Adhesives based on unspecified macromolecular compounds characterised by the presence of specified groups, e.g. terminal or pendant functional groups
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00Adhesives in the form of films or foils
    • C09J7/20Adhesives in the form of films or foils characterised by their carriers
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00Adhesives in the form of films or foils
    • C09J7/20Adhesives in the form of films or foils characterised by their carriers
    • C09J7/22Plastics; Metallised plastics
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00Adhesives in the form of films or foils
    • C09J7/30Adhesives in the form of films or foils characterised by the adhesive composition
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00Adhesives in the form of films or foils
    • C09J7/30Adhesives in the form of films or foils characterised by the adhesive composition
    • C09J7/35Heat-activated
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304Mechanical treatment, e.g. grinding, polishing, cutting
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304Mechanical treatment, e.g. grinding, polishing, cutting
    • H01L21/3043Making grooves, e.g. cutting
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08FMACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F220/00Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
    • C08F220/02Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
    • C08F220/10Esters
    • C08F220/12Esters of monohydric alcohols or phenols
    • C08F220/14Methyl esters, e.g. methyl (meth)acrylate
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08FMACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F220/00Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
    • C08F220/02Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
    • C08F220/10Esters
    • C08F220/26Esters containing oxygen in addition to the carboxy oxygen
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08FMACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F220/00Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
    • C08F220/02Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
    • C08F220/10Esters
    • C08F220/26Esters containing oxygen in addition to the carboxy oxygen
    • C08F220/30Esters containing oxygen in addition to the carboxy oxygen containing aromatic rings in the alcohol moiety
    • C08F220/302Esters containing oxygen in addition to the carboxy oxygen containing aromatic rings in the alcohol moiety and two or more oxygen atoms in the alcohol moiety
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2203/00Applications of adhesives in processes or use of adhesives in the form of films or foils
    • C09J2203/326Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2301/00Additional features of adhesives in the form of films or foils
    • C09J2301/30Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier
    • C09J2301/304Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier the adhesive being heat-activatable, i.e. not tacky at temperatures inferior to 30°C
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2301/00Additional features of adhesives in the form of films or foils
    • C09J2301/40Additional features of adhesives in the form of films or foils characterized by the presence of essential components
    • C09J2301/416Additional features of adhesives in the form of films or foils characterized by the presence of essential components use of irradiation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/6834Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to protect an active side of a device or wafer
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00Stock material or miscellaneous articles
    • Y10T428/28Web or sheet containing structurally defined element or component and having an adhesive outermost layer
    • Y10T428/2852Adhesive compositions
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00Stock material or miscellaneous articles
    • Y10T428/28Web or sheet containing structurally defined element or component and having an adhesive outermost layer
    • Y10T428/2852Adhesive compositions
    • Y10T428/2878Adhesive compositions including addition polymer from unsaturated monomer
    • Y10T428/2891Adhesive compositions including addition polymer from unsaturated monomer including addition polymer from alpha-beta unsaturated carboxylic acid [e.g., acrylic acid, methacrylic acid, etc.] Or derivative thereof

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Polymers & Plastics (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Adhesive Tapes (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Dicing (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
KR1020107021627A 2008-03-31 2009-03-12 에너지선 경화형 중합체, 에너지선 경화형 점착제 조성물, 점착 시트 및 반도체 웨이퍼의 가공방법 Active KR101606217B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2008093897A JP5727688B2 (ja) 2008-03-31 2008-03-31 エネルギー線硬化型重合体、エネルギー線硬化型粘着剤組成物、粘着シートおよび半導体ウエハの加工方法
JPJP-P-2008-093897 2008-03-31

Publications (2)

Publication Number Publication Date
KR20100138979A KR20100138979A (ko) 2010-12-31
KR101606217B1 true KR101606217B1 (ko) 2016-03-24

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KR1020107021627A Active KR101606217B1 (ko) 2008-03-31 2009-03-12 에너지선 경화형 중합체, 에너지선 경화형 점착제 조성물, 점착 시트 및 반도체 웨이퍼의 가공방법

Country Status (4)

Country Link
US (2) US8304920B2 (enExample)
JP (1) JP5727688B2 (enExample)
KR (1) KR101606217B1 (enExample)
WO (1) WO2009122878A1 (enExample)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110045290A1 (en) * 2008-03-03 2011-02-24 Lintec Corporation Adhesive Sheet
JP5727688B2 (ja) * 2008-03-31 2015-06-03 リンテック株式会社 エネルギー線硬化型重合体、エネルギー線硬化型粘着剤組成物、粘着シートおよび半導体ウエハの加工方法
JP6085076B2 (ja) * 2009-03-16 2017-02-22 リンテック株式会社 粘着シートおよび半導体ウエハの加工方法、半導体チップの製造方法
JP5534896B2 (ja) * 2010-03-30 2014-07-02 古河電気工業株式会社 帯電防止性半導体加工用粘着テープ
JP5210346B2 (ja) * 2010-04-19 2013-06-12 電気化学工業株式会社 粘着シート及び電子部品の製造方法
WO2012017568A1 (ja) * 2010-08-05 2012-02-09 古河電気工業株式会社 粘着フィルム及び半導体ウエハ加工用テープ
US10086594B2 (en) * 2012-05-14 2018-10-02 Lintec Corporation Sheet having adhesive resin layer attached thereto, and method for producing semiconductor device
JP6318750B2 (ja) * 2014-03-20 2018-05-09 住友ベークライト株式会社 半導体用ウエハ加工用粘着テープ
JP2016138165A (ja) * 2015-01-26 2016-08-04 日本化薬株式会社 感光性樹脂組成物
WO2017040074A1 (en) 2015-08-31 2017-03-09 3M Innovative Properties Company Negative pressure wound therapy dressings comprising (meth)acrylate pressure-sensitive adhesive with enhanced adhesion to wet surfaces
EP3344720B1 (en) 2015-08-31 2020-10-14 3M Innovative Properties Company Articles comprising (meth)acrylate pressure-sensitive adhesive with enhanced adhesion to wet surfaces
KR102069936B1 (ko) * 2016-04-29 2020-01-23 주식회사 엘지화학 발열체
KR102309379B1 (ko) 2017-12-22 2021-10-06 동우 화인켐 주식회사 점착 시트, 이를 포함하는 광학부재 및 표시장치
KR20190080265A (ko) 2017-12-28 2019-07-08 동우 화인켐 주식회사 점착제 조성물 및 이로부터 제조된 점착 시트
KR20190086850A (ko) 2018-01-15 2019-07-24 동우 화인켐 주식회사 점착 시트, 이를 포함하는 광학부재 및 표시장치
KR102332228B1 (ko) 2018-01-24 2021-11-29 동우 화인켐 주식회사 점착 시트, 이를 포함하는 광학부재 및 화상표시장치
KR102203869B1 (ko) 2018-03-28 2021-01-18 주식회사 엘지화학 임시고정용 점착시트 및 이를 사용한 반도체 장치의 제조 방법
KR102203870B1 (ko) 2018-04-12 2021-01-18 주식회사 엘지화학 임시고정용 점착시트 및 이를 사용한 반도체 장치의 제조 방법
KR102815609B1 (ko) * 2019-02-19 2025-05-30 닛토덴코 가부시키가이샤 이차원 재료 적층체의 제조 방법 및 적층체
JP7428178B2 (ja) * 2019-03-29 2024-02-06 株式会社レゾナック 接着剤用組成物、蓄電装置用外装材及びその製造方法
JP2022051554A (ja) * 2020-09-18 2022-03-31 三菱ケミカル株式会社 粘着剤組成物および粘着シート、並びにアクリル系樹脂
CN113061208A (zh) * 2021-04-01 2021-07-02 湖北科技学院 一种电子束辐照引发制备磺胺二甲基嘧啶分子印迹聚合物的方法
KR102842411B1 (ko) 2022-02-22 2025-08-06 닛산 가가쿠 가부시키가이샤 자기 가교성 폴리머를 포함하는 광경화성 수지 조성물

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007277282A (ja) * 2006-04-03 2007-10-25 Nitto Denko Corp 半導体ウエハ加工用粘着シート

Family Cites Families (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5270431A (en) 1987-07-23 1993-12-14 Basf Aktiengesellschaft Preparation of oligomeric or polymeric radiation-reactive intermediates for solvent-structured layers
DE3724368A1 (de) 1987-07-23 1989-02-02 Basf Ag Verfahren zur herstellung oligomerer oder polymerer strahlungsreaktiver vorstufen fuer loesungsmittelstrukturierte schichten
DE3914374A1 (de) 1989-04-29 1990-10-31 Basf Ag Durch ultraviolette strahlung unter luftsauerstoffatmosphaere vernetzbare copolymerisate
JPH03168209A (ja) * 1989-11-29 1991-07-22 Dainippon Ink & Chem Inc 水溶性エネルギー線硬化型樹脂組成物
JP3189275B2 (ja) * 1990-08-31 2001-07-16 大日本インキ化学工業株式会社 活性エネルギー線硬化型樹脂組成物
JPH05335411A (ja) 1992-06-02 1993-12-17 Toshiba Corp ペレットの製造方法
JP3191176B2 (ja) * 1992-07-01 2001-07-23 ソニーケミカル株式会社 粘着剤組成物
JP2775383B2 (ja) * 1993-09-07 1998-07-16 昭和高分子株式会社 熱硬化性粘着剤組成物
JPH09291264A (ja) 1996-04-24 1997-11-11 Mitsubishi Rayon Co Ltd 紫外線硬化型粘着剤組成物
JP2000328023A (ja) 1999-05-21 2000-11-28 Lintec Corp 粘着シート
US7641966B2 (en) 1999-06-14 2010-01-05 Nitto Denko Corporation Re-release adhesive and re-release adhesive sheet
JP2002187906A (ja) 2000-12-21 2002-07-05 Lintec Corp 高分子量光重合開始剤及びそれを用いた光硬化性材料
JP4999231B2 (ja) 2001-01-15 2012-08-15 ロックペイント株式会社 ラミネーション用接着剤組成物及びその製造方法
JP4877689B2 (ja) * 2001-08-30 2012-02-15 日東電工株式会社 エネルギー線硬化型熱剥離性粘着シート、及びこれを用いた切断片の製造方法
JP4841802B2 (ja) 2003-05-02 2011-12-21 リンテック株式会社 粘着シートおよびその使用方法
US7553548B2 (en) 2003-07-30 2009-06-30 Dainippon Ink & Chemicals, Inc. Laminated sheet for molding
JP4566527B2 (ja) 2003-08-08 2010-10-20 日東電工株式会社 再剥離型粘着シート
JP4275522B2 (ja) * 2003-12-26 2009-06-10 日東電工株式会社 ダイシング・ダイボンドフィルム
JP2005236082A (ja) * 2004-02-20 2005-09-02 Nitto Denko Corp レーザーダイシング用粘着シート及びその製造方法
JP2005263876A (ja) * 2004-03-16 2005-09-29 Lintec Corp 両面粘着シートおよび脆質部材の転写方法
JP2005292435A (ja) * 2004-03-31 2005-10-20 Toppan Printing Co Ltd 光硬化性樹脂組成物
JP4721834B2 (ja) * 2005-09-06 2011-07-13 日東電工株式会社 粘着シート及びこの粘着シートを用いた製品の加工方法
JP4991348B2 (ja) * 2006-04-06 2012-08-01 リンテック株式会社 粘着シート
JP5132096B2 (ja) * 2006-07-13 2013-01-30 日東電工株式会社 活性エネルギー線硬化型再剥離用水分散型アクリル系粘着剤組成物及び粘着シート
JP2008028026A (ja) * 2006-07-19 2008-02-07 Nitto Denko Corp ダイシング用粘着テープ又はシート、被加工物のダイシング方法、及び被加工物の切断片のピックアップ方法
US20090017323A1 (en) 2007-07-13 2009-01-15 3M Innovative Properties Company Layered body and method for manufacturing thin substrate using the layered body
US20110045290A1 (en) 2008-03-03 2011-02-24 Lintec Corporation Adhesive Sheet
JP5727688B2 (ja) * 2008-03-31 2015-06-03 リンテック株式会社 エネルギー線硬化型重合体、エネルギー線硬化型粘着剤組成物、粘着シートおよび半導体ウエハの加工方法
JP6085076B2 (ja) 2009-03-16 2017-02-22 リンテック株式会社 粘着シートおよび半導体ウエハの加工方法、半導体チップの製造方法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007277282A (ja) * 2006-04-03 2007-10-25 Nitto Denko Corp 半導体ウエハ加工用粘着シート

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