KR101603032B1 - 합성 단결정 다이아몬드 물질의 제조 방법 - Google Patents

합성 단결정 다이아몬드 물질의 제조 방법 Download PDF

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KR101603032B1
KR101603032B1 KR1020147028767A KR20147028767A KR101603032B1 KR 101603032 B1 KR101603032 B1 KR 101603032B1 KR 1020147028767 A KR1020147028767 A KR 1020147028767A KR 20147028767 A KR20147028767 A KR 20147028767A KR 101603032 B1 KR101603032 B1 KR 101603032B1
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seed
single crystal
growth
diamond
pressure
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KR20140138934A (ko
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디트리히 보르세
유겐 구라
칼튼 나이겔 닷지
레이몬드 안소니 스피츠
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엘리먼트 씩스 테크놀로지스 리미티드
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    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B9/00Single-crystal growth from melt solutions using molten solvents
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01JCHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J3/00Processes of utilising sub-atmospheric or super-atmospheric pressure to effect chemical or physical change of matter; Apparatus therefor
    • B01J3/06Processes using ultra-high pressure, e.g. for the formation of diamonds; Apparatus therefor, e.g. moulds or dies
    • B01J3/065Presses for the formation of diamonds or boronitrides
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01JCHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J23/00Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00
    • B01J23/70Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00 of the iron group metals or copper
    • B01J23/74Iron group metals
    • B01J23/75Cobalt
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01JCHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J23/00Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00
    • B01J23/70Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00 of the iron group metals or copper
    • B01J23/74Iron group metals
    • B01J23/755Nickel
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01JCHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J23/00Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00
    • B01J23/70Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00 of the iron group metals or copper
    • B01J23/76Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00 of the iron group metals or copper combined with metals, oxides or hydroxides provided for in groups B01J23/02 - B01J23/36
    • B01J23/84Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00 of the iron group metals or copper combined with metals, oxides or hydroxides provided for in groups B01J23/02 - B01J23/36 with arsenic, antimony, bismuth, vanadium, niobium, tantalum, polonium, chromium, molybdenum, tungsten, manganese, technetium or rhenium
    • B01J23/889Manganese, technetium or rhenium
    • B01J23/8892Manganese
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01JCHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J3/00Processes of utilising sub-atmospheric or super-atmospheric pressure to effect chemical or physical change of matter; Apparatus therefor
    • B01J3/06Processes using ultra-high pressure, e.g. for the formation of diamonds; Apparatus therefor, e.g. moulds or dies
    • B01J3/065Presses for the formation of diamonds or boronitrides
    • B01J3/067Presses using a plurality of pressing members working in different directions
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02Elements
    • C30B29/04Diamond
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01JCHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2203/00Processes utilising sub- or super atmospheric pressure
    • B01J2203/06High pressure synthesis
    • B01J2203/0605Composition of the material to be processed
    • B01J2203/0625Carbon
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01JCHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2203/00Processes utilising sub- or super atmospheric pressure
    • B01J2203/06High pressure synthesis
    • B01J2203/065Composition of the material produced
    • B01J2203/0655Diamond
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01JCHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2203/00Processes utilising sub- or super atmospheric pressure
    • B01J2203/06High pressure synthesis
    • B01J2203/0675Structural or physico-chemical features of the materials processed
    • B01J2203/068Crystal growth

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Metallurgy (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Catalysts (AREA)
KR1020147028767A 2012-03-15 2013-03-13 합성 단결정 다이아몬드 물질의 제조 방법 Active KR101603032B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
GB1204533.2 2012-03-15
GBGB1204533.2A GB201204533D0 (en) 2012-03-15 2012-03-15 Process for manufacturing synthetic single crystal diamond material
PCT/EP2013/055173 WO2013135785A1 (en) 2012-03-15 2013-03-13 Process for manufacturing synthetic single crystal diamond material

Publications (2)

Publication Number Publication Date
KR20140138934A KR20140138934A (ko) 2014-12-04
KR101603032B1 true KR101603032B1 (ko) 2016-03-11

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Country Link
US (1) US10370773B2 (enExample)
EP (1) EP2825306B1 (enExample)
JP (1) JP5978496B2 (enExample)
KR (1) KR101603032B1 (enExample)
CN (1) CN104271239B (enExample)
CA (1) CA2866758C (enExample)
GB (2) GB201204533D0 (enExample)
MY (1) MY172188A (enExample)
RU (1) RU2580743C1 (enExample)
SG (1) SG11201405679UA (enExample)
WO (1) WO2013135785A1 (enExample)
ZA (1) ZA201406629B (enExample)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB201204533D0 (en) 2012-03-15 2012-04-25 Element Six Ltd Process for manufacturing synthetic single crystal diamond material
US10167569B2 (en) * 2012-08-16 2019-01-01 National University Corporation Ehime University Hexagonal diamond bulk sintered body and its manufacturing method
CN103949269A (zh) * 2014-05-14 2014-07-30 河南飞孟金刚石工业有限公司 一种多晶金刚石触媒及其热处理工艺
US10471557B2 (en) * 2014-11-05 2019-11-12 Nippon Light Metal Company, Ltd. Method of manufacturing liquid-cooled jacket and liquid-cooled jacket
CN105126853B (zh) * 2015-07-31 2017-07-07 河南省亚龙金刚石制品有限公司 一种合成优质宝石级金刚石大单晶用触媒及其制备方法
CN105817181B (zh) * 2016-04-14 2019-02-26 湖北鄂信钻石科技股份有限公司 一种白色人造金刚石及制造方法
CN106400113A (zh) * 2016-09-12 2017-02-15 河南理工大学 一种人工合成大尺寸单晶金刚石片方法及合成组装块结构
DE102016011098A1 (de) * 2016-09-15 2018-03-15 H.C. Starck Tantalum and Niobium GmbH Verfahren zur Herstellung von elektronischen Bauteilen mittels 3D-Druck
ES2724214B2 (es) * 2018-03-01 2020-01-15 Business Res And Diamonds S L Procedimiento para la obtencion de diamantes sinteticos a partir de la sacarosa y equipo para llevar a cabo dicho procedimiento
CN109234793A (zh) * 2018-10-23 2019-01-18 营口鑫成达新型建材有限公司 一种合成单晶金刚石的方法
WO2021023211A1 (en) * 2019-08-05 2021-02-11 Goldway Technology Limited System and process for diamond authentication
CN110983437B (zh) * 2019-12-26 2021-06-22 长沙新材料产业研究院有限公司 一种生产单晶金刚石的方法
CN111701535A (zh) * 2020-06-28 2020-09-25 安徽亚珠金刚石股份有限公司 一种人造金刚石合成装置与合成方法
RU2752346C1 (ru) * 2020-12-11 2021-07-26 Общество с ограниченной ответственностью "Научно-производственный комплекс "АЛМАЗ" Способ получения сверхтвёрдых материалов
CN112892411B (zh) * 2021-01-25 2022-05-31 四川大学 一种高温高压下生长大颗粒金刚石的方法
EP4215648A1 (fr) * 2022-01-25 2023-07-26 Aithra Procédé pour produire du diamant de synthèse
CN115007068B (zh) * 2022-06-17 2024-07-09 山东昌润钻石股份有限公司 一种八面体金刚石的合成方法
TWI840846B (zh) * 2022-06-21 2024-05-01 宋健民 一種單晶鑽石晶圓及單晶鑽石的製造方法
CN115198360B (zh) * 2022-07-27 2023-08-22 内蒙古科技大学 一种可控制备单晶金刚石纳米柱阵列簇的方法
CN115591476B (zh) * 2022-10-19 2025-09-23 齐鲁工业大学(山东省科学院) 一种蓝宝石优化处理方法
CN116492926B (zh) * 2023-03-23 2025-11-21 湖北科技学院 一种控制钻石生长速度的方法
CN118664261A (zh) * 2024-07-03 2024-09-20 湖南坚利美超硬材料有限公司 一种金刚石内部流道加工方法及其设备

Family Cites Families (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5370095A (en) * 1976-12-03 1978-06-22 Ishizuka Kenkyusho Method of making diamond
JPS6035282B2 (ja) 1977-11-15 1985-08-14 株式会社東芝 ダイヤモンドの合成法
JPS59203717A (ja) 1983-04-28 1984-11-17 Toshiba Tungaloy Co Ltd ダイヤモンド結晶の製造方法
US4632817A (en) * 1984-04-04 1986-12-30 Sumitomo Electric Industries, Ltd. Method of synthesizing diamond
JPS6168395A (ja) 1984-09-13 1986-04-08 Showa Denko Kk ダイヤモンド結晶の成長法
US4547257A (en) 1984-09-25 1985-10-15 Showa Denko Kabushiki Kaisha Method for growing diamond crystals
JPS6384627A (ja) 1986-09-26 1988-04-15 Toshiba Tungaloy Co Ltd ダイヤモンド結晶の製造方法
ZA889314B (en) * 1987-12-21 1990-02-28 De Beers Ind Diamond Diamond synthesis
JP2645719B2 (ja) * 1988-03-08 1997-08-25 住友電気工業株式会社 ダイヤモンドの合成方法
US5273730A (en) * 1988-03-08 1993-12-28 Sumitomo Electric Industries, Ltd. Method of synthesizing diamond
SU1788700A1 (ru) * 1989-04-25 1996-02-20 Институт сверхтвердых материалов АН УССР Способ синтеза монокристаллов алмаза на затравке
JP2546558B2 (ja) * 1991-07-22 1996-10-23 住友電気工業株式会社 ダイヤモンド砥粒の合成方法
JP3156326B2 (ja) * 1992-01-07 2001-04-16 富士通株式会社 半導体成長装置およびそれによる半導体成長方法
JP3452665B2 (ja) 1994-11-22 2003-09-29 東京瓦斯株式会社 ダイヤモンド単結晶の合成方法及び単結晶ダイヤモンド
JPH08337498A (ja) 1995-04-13 1996-12-24 Sumitomo Electric Ind Ltd ダイヤモンド粒子、ダイヤモンド合成用粒子及び圧密体並びにそれらの製造方法
US7404857B2 (en) * 1997-04-04 2008-07-29 Chien-Min Sung Superabrasive particle synthesis with controlled placement of crystalline seeds
US7368013B2 (en) 1997-04-04 2008-05-06 Chien-Min Sung Superabrasive particle synthesis with controlled placement of crystalline seeds
JP3660491B2 (ja) 1998-01-23 2005-06-15 昭和電工株式会社 超高圧製品の製造方法
US6627168B1 (en) 1999-10-01 2003-09-30 Showa Denko Kabushiki Kaisha Method for growing diamond and cubic boron nitride crystals
US7101433B2 (en) * 2002-12-18 2006-09-05 General Electric Company High pressure/high temperature apparatus with improved temperature control for crystal growth
US7128547B2 (en) * 2004-01-13 2006-10-31 Chien-Min Sung High pressure split die and associated methods
DE602004032063D1 (de) * 2004-12-09 2011-05-12 Element Six Production Pty Ltd Synthese von diamant
WO2006129155A1 (en) 2005-05-31 2006-12-07 Element Six (Production) (Pty) Ltd Method of cladding diamond seeds
GB0704516D0 (en) * 2007-03-08 2007-04-18 Element Six Ltd Diamond
GB0900771D0 (en) * 2009-01-16 2009-03-04 Element Six Ltd Diamond
GB201204533D0 (en) 2012-03-15 2012-04-25 Element Six Ltd Process for manufacturing synthetic single crystal diamond material

Also Published As

Publication number Publication date
US10370773B2 (en) 2019-08-06
CN104271239A (zh) 2015-01-07
ZA201406629B (en) 2016-08-31
GB2501808A (en) 2013-11-06
KR20140138934A (ko) 2014-12-04
GB201304510D0 (en) 2013-04-24
CA2866758A1 (en) 2013-09-19
SG11201405679UA (en) 2014-11-27
CA2866758C (en) 2017-01-03
EP2825306A1 (en) 2015-01-21
GB2501808B (en) 2016-03-16
EP2825306B1 (en) 2017-02-01
WO2013135785A1 (en) 2013-09-19
GB201204533D0 (en) 2012-04-25
RU2580743C1 (ru) 2016-04-10
US20150027363A1 (en) 2015-01-29
JP2015511930A (ja) 2015-04-23
CN104271239B (zh) 2017-12-12
MY172188A (en) 2019-11-15
JP5978496B2 (ja) 2016-08-24

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