KR101593517B1 - 웨이퍼의 세정 방법 - Google Patents

웨이퍼의 세정 방법 Download PDF

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Publication number
KR101593517B1
KR101593517B1 KR1020137018746A KR20137018746A KR101593517B1 KR 101593517 B1 KR101593517 B1 KR 101593517B1 KR 1020137018746 A KR1020137018746 A KR 1020137018746A KR 20137018746 A KR20137018746 A KR 20137018746A KR 101593517 B1 KR101593517 B1 KR 101593517B1
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KR
South Korea
Prior art keywords
group
ether
glycol
water
carbon atoms
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KR1020137018746A
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English (en)
Korean (ko)
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KR20130088896A (ko
Inventor
소이치 구몬
다카시 사이오
시노부 아라타
마사노리 사이토
히데히사 나나이
요시노리 아카마츠
Original Assignee
샌트랄 글래스 컴퍼니 리미티드
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Publication of KR20130088896A publication Critical patent/KR20130088896A/ko
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Publication of KR101593517B1 publication Critical patent/KR101593517B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/162—Organic compounds containing Si
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10—Objects to be cleaned
    • C11D2111/14—Hard surfaces
    • C11D2111/22—Electronic devices, e.g. PCBs or semiconductors

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Wood Science & Technology (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
KR1020137018746A 2010-12-28 2011-12-20 웨이퍼의 세정 방법 KR101593517B1 (ko)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
JP2010293853 2010-12-28
JPJP-P-2010-293853 2010-12-28
JPJP-P-2011-238623 2011-10-31
JP2011238623 2011-10-31
JPJP-P-2011-274084 2011-12-15
JP2011274084A JP2013118347A (ja) 2010-12-28 2011-12-15 ウェハの洗浄方法
PCT/JP2011/079458 WO2012090779A1 (ja) 2010-12-28 2011-12-20 ウェハの洗浄方法

Publications (2)

Publication Number Publication Date
KR20130088896A KR20130088896A (ko) 2013-08-08
KR101593517B1 true KR101593517B1 (ko) 2016-02-15

Family

ID=46382890

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020137018746A KR101593517B1 (ko) 2010-12-28 2011-12-20 웨이퍼의 세정 방법

Country Status (6)

Country Link
JP (1) JP2013118347A (zh)
KR (1) KR101593517B1 (zh)
CN (2) CN107068540A (zh)
SG (3) SG10201605687VA (zh)
TW (1) TWI440993B (zh)
WO (1) WO2012090779A1 (zh)

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KR101367252B1 (ko) * 2011-11-10 2014-02-25 제일모직 주식회사 수소화폴리실록사잔 박막용 린스액 및 이를 이용한 수소화폴리실록사잔 박막의 패턴 형성 방법
JP2014067801A (ja) * 2012-09-25 2014-04-17 Central Glass Co Ltd 保護膜形成用薬液
KR101525152B1 (ko) 2012-12-12 2015-06-04 영창케미칼 주식회사 커패시터 쓰러짐 방지용 코팅 조성물
JP6013289B2 (ja) * 2013-08-05 2016-10-25 株式会社東芝 半導体基板の洗浄方法および半導体基板の洗浄装置
JP6191372B2 (ja) * 2013-10-04 2017-09-06 セントラル硝子株式会社 ウェハの洗浄方法
WO2015070164A1 (en) 2013-11-11 2015-05-14 Tokyo Electron Limited System and method for enhanced removal of metal hardmask using ultra violet treatment
JP6405618B2 (ja) * 2013-11-12 2018-10-17 株式会社Sumco シリコンウェーハの製造方法
JP6304592B2 (ja) * 2014-03-25 2018-04-04 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置
KR102180284B1 (ko) * 2015-01-13 2020-11-18 동우 화인켐 주식회사 실리콘계 수지 제거용 조성물 및 이를 이용한 박막 기판 제조 방법
WO2016154438A1 (en) * 2015-03-26 2016-09-29 Life Technologies Corporation Method for treating a semiconductor sensor array device
US9976037B2 (en) * 2015-04-01 2018-05-22 Versum Materials Us, Llc Composition for treating surface of substrate, method and device
JP6420707B2 (ja) 2015-04-07 2018-11-07 東京エレクトロン株式会社 基板処理方法および基板処理装置
JP6875630B2 (ja) * 2015-08-20 2021-05-26 セントラル硝子株式会社 ウェハの洗浄方法及び該洗浄方法に用いる薬液
WO2017030073A1 (ja) * 2015-08-20 2017-02-23 セントラル硝子株式会社 ウェハの洗浄方法及び該洗浄方法に用いる薬液
JP6703256B2 (ja) * 2016-03-15 2020-06-03 セントラル硝子株式会社 撥水性保護膜形成剤、撥水性保護膜形成用薬液、及びウェハの洗浄方法
WO2017159446A1 (ja) * 2016-03-15 2017-09-21 セントラル硝子株式会社 撥水性保護膜形成用薬液、及び該薬液を用いるウェハの洗浄方法
JP2017168710A (ja) * 2016-03-17 2017-09-21 セントラル硝子株式会社 ウェハの洗浄方法
JP2017174859A (ja) * 2016-03-18 2017-09-28 セントラル硝子株式会社 ウェハの洗浄方法
JP2017187609A (ja) * 2016-04-05 2017-10-12 アーゼッド・エレクトロニック・マテリアルズ（ルクセンブルグ）ソシエテ・ア・レスポンサビリテ・リミテ ギャップフィリング組成物および低分子化合物を用いたパターン形成方法
SG11201908617QA (en) * 2017-03-24 2019-10-30 Fujifilm Electronic Materials Usa Inc Surface treatment methods and compositions therefor
JP2017157863A (ja) * 2017-06-06 2017-09-07 セントラル硝子株式会社 ウェハの洗浄方法
US10954480B2 (en) * 2017-09-29 2021-03-23 Versum Materials Us, Llc Compositions and methods for preventing collapse of high aspect ratio structures during drying
JP7189427B2 (ja) * 2017-12-22 2022-12-14 セントラル硝子株式会社 表面処理剤及び表面処理体の製造方法
JP6916731B2 (ja) * 2017-12-28 2021-08-11 東京応化工業株式会社 基板の撥水化方法、表面処理剤、及び基板表面を洗浄液により洗浄する際の有機パターン又は無機パターンの倒れを抑制する方法
JP7277700B2 (ja) * 2018-01-15 2023-05-19 セントラル硝子株式会社 撥水性保護膜形成用薬液、及びウェハの表面処理方法
WO2019138870A1 (ja) * 2018-01-15 2019-07-18 セントラル硝子株式会社 撥水性保護膜形成用薬液、及びウェハの表面処理方法
SG11202009171XA (en) 2018-04-05 2020-10-29 Central Glass Co Ltd Surface treatment method of wafer and composition used for said method
JP7077184B2 (ja) * 2018-08-30 2022-05-30 キオクシア株式会社 基板処理方法及び半導体装置の製造方法
JP7328564B2 (ja) * 2018-11-22 2023-08-17 セントラル硝子株式会社 ベベル部処理剤組成物およびウェハの製造方法
JP6631687B1 (ja) * 2018-12-25 2020-01-15 株式会社Sumco 半導体ウェーハの洗浄槽および洗浄方法
JP7446097B2 (ja) * 2019-12-06 2024-03-08 東京応化工業株式会社 表面処理剤及び表面処理方法
CN114068345A (zh) * 2020-08-05 2022-02-18 长鑫存储技术有限公司 半导体结构的处理方法及形成方法
US12040175B2 (en) 2020-08-05 2024-07-16 Changxin Memory Technologies, Inc. Semiconductor structure processing method and manufacturing method
EP4299688A1 (en) * 2021-02-26 2024-01-03 Central Glass Company, Limited Surface treatment composition and method for producing wafer
JP7504850B2 (ja) 2021-09-28 2024-06-24 芝浦メカトロニクス株式会社 基板乾燥装置、基板処理装置及び基板乾燥方法
JPWO2023157619A1 (zh) * 2022-02-18 2023-08-24

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010192879A (ja) * 2009-01-21 2010-09-02 Central Glass Co Ltd シリコンウェハ用洗浄剤
JP2010272852A (ja) * 2009-04-24 2010-12-02 Central Glass Co Ltd シリコンウェハ用洗浄剤

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JP2001300454A (ja) * 2000-04-28 2001-10-30 Matsushita Electric Ind Co Ltd 基板の表面処理方法
JP4005092B2 (ja) * 2004-08-20 2007-11-07 東京応化工業株式会社 洗浄除去用溶剤
JP2008277748A (ja) * 2007-03-30 2008-11-13 Renesas Technology Corp レジストパターンの形成方法とその方法により製造した半導体デバイス
US7838425B2 (en) * 2008-06-16 2010-11-23 Kabushiki Kaisha Toshiba Method of treating surface of semiconductor substrate

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010192879A (ja) * 2009-01-21 2010-09-02 Central Glass Co Ltd シリコンウェハ用洗浄剤
JP2010272852A (ja) * 2009-04-24 2010-12-02 Central Glass Co Ltd シリコンウェハ用洗浄剤

Also Published As

Publication number Publication date
SG10201605687VA (en) 2016-09-29
CN107068540A (zh) 2017-08-18
CN103283004A (zh) 2013-09-04
TWI440993B (zh) 2014-06-11
CN103283004B (zh) 2017-04-12
SG190068A1 (en) 2013-06-28
WO2012090779A1 (ja) 2012-07-05
SG10201710240SA (en) 2018-01-30
TW201232196A (en) 2012-08-01
KR20130088896A (ko) 2013-08-08
JP2013118347A (ja) 2013-06-13

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