KR101476943B1 - 슬러리, 연마액 세트, 연마액, 기판의 연마 방법 및 기판 - Google Patents

슬러리, 연마액 세트, 연마액, 기판의 연마 방법 및 기판 Download PDF

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Publication number
KR101476943B1
KR101476943B1 KR1020137012271A KR20137012271A KR101476943B1 KR 101476943 B1 KR101476943 B1 KR 101476943B1 KR 1020137012271 A KR1020137012271 A KR 1020137012271A KR 20137012271 A KR20137012271 A KR 20137012271A KR 101476943 B1 KR101476943 B1 KR 101476943B1
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polishing
liquid
polished
film
abrasive grains
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KR20130133188A (ko
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도모히로 이와노
다케노리 나리타
다이스케 류자키
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히타치가세이가부시끼가이샤
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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/12—Etching, surface-brightening or pickling compositions containing heavy metal salts in an amount of at least 50% of the non-solvent components
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/402—Chemomechanical polishing [CMP] of semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/06—Planarisation of inorganic insulating materials
    • H10P95/062—Planarisation of inorganic insulating materials involving a dielectric removal step

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
KR1020137012271A 2010-11-22 2011-11-21 슬러리, 연마액 세트, 연마액, 기판의 연마 방법 및 기판 Active KR101476943B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JPJP-P-2010-260036 2010-11-22
JP2010260036 2010-11-22
PCT/JP2011/076822 WO2012070541A1 (ja) 2010-11-22 2011-11-21 スラリー、研磨液セット、研磨液、基板の研磨方法及び基板

Related Child Applications (3)

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KR1020137017130A Division KR20130129397A (ko) 2010-11-22 2011-11-21 슬러리, 연마액 세트, 연마액, 기판의 연마 방법 및 기판
KR1020137017128A Division KR101886895B1 (ko) 2010-11-22 2011-11-21 슬러리, 연마액 세트, 연마액, 기판의 연마 방법 및 기판
KR1020137017129A Division KR20130129396A (ko) 2010-11-22 2011-11-21 슬러리, 연마액 세트, 연마액, 기판의 연마 방법 및 기판

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KR20130133188A KR20130133188A (ko) 2013-12-06
KR101476943B1 true KR101476943B1 (ko) 2014-12-24

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KR1020137012271A Active KR101476943B1 (ko) 2010-11-22 2011-11-21 슬러리, 연마액 세트, 연마액, 기판의 연마 방법 및 기판
KR1020137017129A Withdrawn KR20130129396A (ko) 2010-11-22 2011-11-21 슬러리, 연마액 세트, 연마액, 기판의 연마 방법 및 기판
KR1020137017130A Withdrawn KR20130129397A (ko) 2010-11-22 2011-11-21 슬러리, 연마액 세트, 연마액, 기판의 연마 방법 및 기판
KR1020137017128A Active KR101886895B1 (ko) 2010-11-22 2011-11-21 슬러리, 연마액 세트, 연마액, 기판의 연마 방법 및 기판

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KR1020137017130A Withdrawn KR20130129397A (ko) 2010-11-22 2011-11-21 슬러리, 연마액 세트, 연마액, 기판의 연마 방법 및 기판
KR1020137017128A Active KR101886895B1 (ko) 2010-11-22 2011-11-21 슬러리, 연마액 세트, 연마액, 기판의 연마 방법 및 기판

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US (5) US9988573B2 (cg-RX-API-DMAC7.html)
JP (4) JP5590144B2 (cg-RX-API-DMAC7.html)
KR (4) KR101476943B1 (cg-RX-API-DMAC7.html)
CN (4) CN103497732B (cg-RX-API-DMAC7.html)
SG (1) SG190054A1 (cg-RX-API-DMAC7.html)
TW (4) TWI434919B (cg-RX-API-DMAC7.html)
WO (1) WO2012070541A1 (cg-RX-API-DMAC7.html)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011111421A1 (ja) 2010-03-12 2011-09-15 日立化成工業株式会社 スラリ、研磨液セット、研磨液及びこれらを用いた基板の研磨方法
CN103222036B (zh) 2010-11-22 2016-11-09 日立化成株式会社 悬浮液、研磨液套剂、研磨液、基板的研磨方法及基板
CN103497732B (zh) * 2010-11-22 2016-08-10 日立化成株式会社 悬浮液、研磨液套剂、研磨液、基板的研磨方法及基板
CN104137232A (zh) 2012-02-21 2014-11-05 日立化成株式会社 研磨剂、研磨剂组和基体的研磨方法
JP6044629B2 (ja) 2012-02-21 2016-12-14 日立化成株式会社 研磨剤、研磨剤セット及び基体の研磨方法
WO2013175853A1 (ja) * 2012-05-22 2013-11-28 日立化成株式会社 砥粒、スラリー、研磨液及びこれらの製造方法
US20150129796A1 (en) * 2012-05-22 2015-05-14 Hitachi Chemical Company, Ltd. Abrasive grains, slurry, polishing solution, and manufacturing methods therefor
WO2013175854A1 (ja) * 2012-05-22 2013-11-28 日立化成株式会社 スラリー、研磨液セット、研磨液、基体の研磨方法及び基体
CN104321852B (zh) 2012-05-22 2016-12-28 日立化成株式会社 悬浮液、研磨液套剂、研磨液、基体的研磨方法及基体
KR102034330B1 (ko) 2012-05-22 2019-10-18 히타치가세이가부시끼가이샤 슬러리, 연마액 세트, 연마액, 기체의 연마 방법 및 기체
JP5943073B2 (ja) 2012-05-22 2016-06-29 日立化成株式会社 スラリー、研磨液セット、研磨液及び基体の研磨方法
WO2014034358A1 (ja) 2012-08-30 2014-03-06 日立化成株式会社 研磨剤、研磨剤セット及び基体の研磨方法
KR102225154B1 (ko) 2013-06-12 2021-03-09 쇼와덴코머티리얼즈가부시끼가이샤 Cmp용 연마액 및 연마 방법
JP6428625B2 (ja) * 2013-08-30 2018-11-28 日立化成株式会社 スラリー、研磨液セット、研磨液、及び、基体の研磨方法
KR20160054466A (ko) 2013-09-10 2016-05-16 히타치가세이가부시끼가이샤 슬러리, 연마액 세트, 연마액, 기체의 연마 방법 및 기체
JP6256482B2 (ja) 2013-12-26 2018-01-10 日立化成株式会社 研磨剤、研磨剤セット及び基体の研磨方法
US11046869B2 (en) 2015-09-09 2021-06-29 Showa Denko Materials Co., Ltd. Polishing liquid, polishing liquid set, and substrate polishing method
WO2018179064A1 (ja) 2017-03-27 2018-10-04 日立化成株式会社 スラリ及び研磨方法
WO2018179061A1 (ja) 2017-03-27 2018-10-04 日立化成株式会社 研磨液、研磨液セット及び研磨方法
WO2019043819A1 (ja) 2017-08-30 2019-03-07 日立化成株式会社 スラリ及び研磨方法
US11572490B2 (en) 2018-03-22 2023-02-07 Showa Denko Materials Co., Ltd. Polishing liquid, polishing liquid set, and polishing method
WO2020021680A1 (ja) * 2018-07-26 2020-01-30 日立化成株式会社 スラリ及び研磨方法
JP6888744B2 (ja) 2018-09-25 2021-06-16 昭和電工マテリアルズ株式会社 スラリ及び研磨方法
TWI896411B (zh) * 2020-08-31 2025-09-01 南韓商秀博瑞殷股份有限公司 氧化鈰粒子、其製造方法、包含其的化學機械研磨用漿料組合物以及半導體器件的製造方法
JP7279850B2 (ja) 2020-11-11 2023-05-23 株式会社レゾナック 研磨液及び研磨方法
US20230128096A1 (en) 2020-11-11 2023-04-27 Showa Denko Materials Co., Ltd. Polishing liquid and polishing method
CN112680111B (zh) * 2020-12-24 2022-07-08 安徽中飞科技有限公司 一种玻璃用抛光液及其应用
KR102620964B1 (ko) 2021-07-08 2024-01-03 에스케이엔펄스 주식회사 반도체 공정용 연마 조성물 및 이를 이용한 연마된 물품의 제조방법

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2002067309A1 (en) * 2001-02-20 2002-08-29 Hitachi Chemical Co., Ltd. Polishing compound and method for polishing substrate
JP2009290188A (ja) * 2008-04-30 2009-12-10 Hitachi Chem Co Ltd 研磨剤及び研磨方法
JP2010153781A (ja) * 2008-11-20 2010-07-08 Hitachi Chem Co Ltd 基板の研磨方法

Family Cites Families (55)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3123452A (en) 1964-03-03 Glass polish and process of polishing
US3097083A (en) 1959-07-02 1963-07-09 American Potash & Chem Corp Polishing composition and process of forming same
BR9104844A (pt) 1991-11-06 1993-05-11 Solvay Processo para a extracao seletiva de cerio de uma solucao aquosa de elementos de terras raras
FR2684662B1 (fr) 1991-12-09 1994-05-06 Rhone Poulenc Chimie Composition a base d'oxyde cerique, preparation et utilisation.
FR2714370B1 (fr) 1993-12-24 1996-03-08 Rhone Poulenc Chimie Précurseur d'une composition et composition à base d'un oxyde mixte de cérium et de zirconium, procédé de préparation et utilisation.
JP3278532B2 (ja) 1994-07-08 2002-04-30 株式会社東芝 半導体装置の製造方法
KR100336598B1 (ko) 1996-02-07 2002-05-16 이사오 우치가사키 산화 세륨 연마제 제조용 산화 세륨 입자
JPH09270402A (ja) 1996-03-29 1997-10-14 Hitachi Chem Co Ltd 酸化セリウム研磨剤及び基板の製造法
KR100759182B1 (ko) 1996-09-30 2007-09-14 히다치 가세고교 가부시끼가이샤 산화세륨 입자
JPH10154672A (ja) 1996-09-30 1998-06-09 Hitachi Chem Co Ltd 酸化セリウム研磨剤及び基板の研磨法
US5759917A (en) 1996-12-30 1998-06-02 Cabot Corporation Composition for oxide CMP
JPH10106994A (ja) 1997-01-28 1998-04-24 Hitachi Chem Co Ltd 酸化セリウム研磨剤及び基板の研磨法
DE69841885D1 (de) 1997-03-03 2010-10-21 Nissan Chemical Ind Ltd Verfahren zur herstellung von kompositsolen, überzugkomposition und optischem element
JP3992402B2 (ja) 1999-05-25 2007-10-17 株式会社コーセー 金属酸化物固溶酸化セリウムからなる紫外線遮断剤並びにそれを配合した樹脂組成物及び化粧料
US6440856B1 (en) 1999-09-14 2002-08-27 Jsr Corporation Cleaning agent for semiconductor parts and method for cleaning semiconductor parts
JP2002241739A (ja) 2001-02-20 2002-08-28 Hitachi Chem Co Ltd 研磨剤及び基板の研磨方法
JP4231632B2 (ja) 2001-04-27 2009-03-04 花王株式会社 研磨液組成物
CN101058713B (zh) 2001-10-31 2011-02-09 日立化成工业株式会社 研磨液及研磨方法
JP3782771B2 (ja) 2002-11-06 2006-06-07 ユシロ化学工業株式会社 研磨用砥粒及び研磨剤の製造方法
US7300601B2 (en) * 2002-12-10 2007-11-27 Advanced Technology Materials, Inc. Passivative chemical mechanical polishing composition for copper film planarization
CN1748292B (zh) 2002-12-31 2010-09-01 三菱住友硅晶株式会社 化学机械研磨用浆料组合物、利用它的半导体元件的表面平坦化方法以及浆料组合物的选择比控制方法
KR100698396B1 (ko) * 2003-05-28 2007-03-23 히다치 가세고교 가부시끼가이샤 연마제 및 연마 방법
US20050028450A1 (en) * 2003-08-07 2005-02-10 Wen-Qing Xu CMP slurry
CN1849264B (zh) 2003-09-12 2010-09-22 日立化成工业株式会社 铈盐、其制造方法、氧化铈以及铈系研磨剂
KR100555432B1 (ko) * 2003-09-23 2006-02-24 삼성코닝 주식회사 반도체 박막 연마용 산화세륨 수성 슬러리 및 이의 제조방법
JP5013671B2 (ja) 2004-12-28 2012-08-29 日揮触媒化成株式会社 金属酸化物ゾルの製造方法および金属酸化物ゾル
JP2006249129A (ja) 2005-03-08 2006-09-21 Hitachi Chem Co Ltd 研磨剤の製造方法及び研磨剤
US20060278614A1 (en) * 2005-06-08 2006-12-14 Cabot Microelectronics Corporation Polishing composition and method for defect improvement by reduced particle stiction on copper surface
US7803203B2 (en) 2005-09-26 2010-09-28 Cabot Microelectronics Corporation Compositions and methods for CMP of semiconductor materials
KR20070041330A (ko) 2005-10-14 2007-04-18 가오가부시끼가이샤 반도체 기판용 연마액 조성물
CN101395097B (zh) 2006-04-14 2011-05-18 昭和电工株式会社 玻璃基板的加工方法以及玻璃基板加工用漂洗剂组合物
SG136886A1 (en) 2006-04-28 2007-11-29 Asahi Glass Co Ltd Method for producing glass substrate for magnetic disk, and magnetic disk
FR2906800B1 (fr) 2006-10-09 2008-11-28 Rhodia Recherches & Tech Suspension liquide et poudre de particules d'oxyde de cerium, procedes de preparation de celles-ci et utilisation dans le polissage
JP5381701B2 (ja) 2007-02-27 2014-01-08 日立化成株式会社 金属用研磨液及び研磨方法
JP5281758B2 (ja) 2007-05-24 2013-09-04 ユシロ化学工業株式会社 研磨用組成物
JP4294710B2 (ja) 2007-09-13 2009-07-15 三井金属鉱業株式会社 酸化セリウム及びその製造方法
JP5444625B2 (ja) 2008-03-05 2014-03-19 日立化成株式会社 Ｃｍｐ研磨液、基板の研磨方法及び電子部品
CN102766407B (zh) 2008-04-23 2016-04-27 日立化成株式会社 研磨剂及使用该研磨剂的基板研磨方法
US8383003B2 (en) 2008-06-20 2013-02-26 Nexplanar Corporation Polishing systems
JP5403957B2 (ja) 2008-07-01 2014-01-29 花王株式会社 研磨液組成物
US20100107509A1 (en) 2008-11-04 2010-05-06 Guiselin Olivier L Coated abrasive article for polishing or lapping applications and system and method for producing the same.
JP5499556B2 (ja) * 2008-11-11 2014-05-21 日立化成株式会社 スラリ及び研磨液セット並びにこれらから得られるｃｍｐ研磨液を用いた基板の研磨方法及び基板
JP2010153782A (ja) 2008-11-20 2010-07-08 Hitachi Chem Co Ltd 基板の研磨方法
JP5397386B2 (ja) 2008-12-11 2014-01-22 日立化成株式会社 Ｃｍｐ用研磨液及びこれを用いた研磨方法
JP5355099B2 (ja) 2009-01-08 2013-11-27 ニッタ・ハース株式会社 研磨組成物
KR101172647B1 (ko) 2009-10-22 2012-08-08 히다치 가세고교 가부시끼가이샤 연마제, 농축 1액식 연마제, 2액식 연마제 및 기판의 연마 방법
JP2011142284A (ja) * 2009-12-10 2011-07-21 Hitachi Chem Co Ltd Ｃｍｐ研磨液、基板の研磨方法及び電子部品
WO2011111421A1 (ja) * 2010-03-12 2011-09-15 日立化成工業株式会社 スラリ、研磨液セット、研磨液及びこれらを用いた基板の研磨方法
JP5648567B2 (ja) 2010-05-07 2015-01-07 日立化成株式会社 Ｃｍｐ用研磨液及びこれを用いた研磨方法
CN103222036B (zh) 2010-11-22 2016-11-09 日立化成株式会社 悬浮液、研磨液套剂、研磨液、基板的研磨方法及基板
CN103497732B (zh) 2010-11-22 2016-08-10 日立化成株式会社 悬浮液、研磨液套剂、研磨液、基板的研磨方法及基板
CN102408836A (zh) 2011-10-20 2012-04-11 天津理工大学 一种用于氧化钛薄膜化学机械平坦化的纳米抛光液及应用
KR102034330B1 (ko) * 2012-05-22 2019-10-18 히타치가세이가부시끼가이샤 슬러리, 연마액 세트, 연마액, 기체의 연마 방법 및 기체
JP5943073B2 (ja) * 2012-05-22 2016-06-29 日立化成株式会社 スラリー、研磨液セット、研磨液及び基体の研磨方法
JP6428625B2 (ja) * 2013-08-30 2018-11-28 日立化成株式会社 スラリー、研磨液セット、研磨液、及び、基体の研磨方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2002067309A1 (en) * 2001-02-20 2002-08-29 Hitachi Chemical Co., Ltd. Polishing compound and method for polishing substrate
JP2009290188A (ja) * 2008-04-30 2009-12-10 Hitachi Chem Co Ltd 研磨剤及び研磨方法
JP2010153781A (ja) * 2008-11-20 2010-07-08 Hitachi Chem Co Ltd 基板の研磨方法

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