KR101447020B1 - 반도체장치 및 그 제작 방법 - Google Patents

반도체장치 및 그 제작 방법 Download PDF

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Publication number
KR101447020B1
KR101447020B1 KR1020080020360A KR20080020360A KR101447020B1 KR 101447020 B1 KR101447020 B1 KR 101447020B1 KR 1020080020360 A KR1020080020360 A KR 1020080020360A KR 20080020360 A KR20080020360 A KR 20080020360A KR 101447020 B1 KR101447020 B1 KR 101447020B1
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South Korea
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layer
semiconductor layer
region
insulating layer
crystalline semiconductor
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KR1020080020360A
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Korean (ko)
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KR20080082478A (ko
Inventor
히데토 오누마
아쓰오 이소베
히로미치 고도
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가부시키가이샤 한도오따이 에네루기 켄큐쇼
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Publication of KR20080082478A publication Critical patent/KR20080082478A/ko
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0221—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies
    • H10D86/0223—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials
    • H10D86/0227—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials using structural arrangements to control crystal growth, e.g. placement of grain filters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02691—Scanning of a beam
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Optics & Photonics (AREA)
  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
  • Semiconductor Memories (AREA)
KR1020080020360A 2007-03-08 2008-03-05 반도체장치 및 그 제작 방법 Expired - Fee Related KR101447020B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007058582 2007-03-08
JPJP-P-2007-00058582 2007-03-08

Publications (2)

Publication Number Publication Date
KR20080082478A KR20080082478A (ko) 2008-09-11
KR101447020B1 true KR101447020B1 (ko) 2014-10-06

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KR1020080020360A Expired - Fee Related KR101447020B1 (ko) 2007-03-08 2008-03-05 반도체장치 및 그 제작 방법

Country Status (4)

Country Link
US (2) US8143118B2 (enExample)
EP (1) EP1968111A3 (enExample)
JP (1) JP2008252068A (enExample)
KR (1) KR101447020B1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20220038784A (ko) * 2019-08-07 2022-03-29 어플라이드 머티어리얼스, 인코포레이티드 3d nand를 위한 수정된 스택들

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US20090193676A1 (en) * 2008-01-31 2009-08-06 Guo Shengguang Shoe Drying Apparatus
USD645029S1 (en) * 2008-05-09 2011-09-13 Semiconductor Energy Laboratory Co., Ltd. Antenna
USD602922S1 (en) * 2008-05-09 2009-10-27 Semiconductor Energy Laboratory Co., Ltd. Contactless data carrier
USD605642S1 (en) * 2008-09-10 2009-12-08 Semiconductor Energy Laboratory Co., Ltd. Contactless data carrier
KR20130138352A (ko) 2008-11-07 2013-12-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
US8519387B2 (en) * 2010-07-26 2013-08-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing
JP2014043437A (ja) 2012-08-03 2014-03-13 Semiconductor Energy Lab Co Ltd 有機化合物、発光素子、発光装置、電子機器、及び照明装置
KR20150006685A (ko) * 2013-07-09 2015-01-19 삼성디스플레이 주식회사 표시 장치 및 이의 제조 방법
JP6452189B2 (ja) * 2014-04-01 2019-01-16 東洋紡株式会社 フレキシブル電子デバイスの製造方法
US9780210B1 (en) * 2016-08-11 2017-10-03 Qualcomm Incorporated Backside semiconductor growth
US20200352028A1 (en) * 2017-04-13 2020-11-05 Nitride Solutions Inc. Device for thermal conduction and electrical isolation
KR102623558B1 (ko) 2018-11-14 2024-01-10 삼성디스플레이 주식회사 표시 장치

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KR19990036851A (ko) * 1997-10-06 1999-05-25 다카노 야스아키 박막 트랜지스터의 제조 방법
JP2001230420A (ja) * 1999-12-10 2001-08-24 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
JP2003257864A (ja) * 2001-12-28 2003-09-12 Semiconductor Energy Lab Co Ltd 半導体装置及び半導体装置の生産システム

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JPH0276264A (ja) 1988-09-12 1990-03-15 Sony Corp Ｓｏｉ型半導体装置
JPH0423473A (ja) * 1990-05-18 1992-01-27 Sharp Corp 極薄膜再結晶化シリコン基板の形成方法
JPH0513762A (ja) 1991-07-05 1993-01-22 Sharp Corp 薄膜トランジスタにおけるコンタクトホールの形成方法
JPH05110099A (ja) 1991-10-18 1993-04-30 Casio Comput Co Ltd 薄膜トランジスタの製造方法
JPH05198594A (ja) 1992-01-21 1993-08-06 Fujitsu Ltd 半導体装置及びその製造方法
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JP4030759B2 (ja) 2001-12-28 2008-01-09 株式会社半導体エネルギー研究所 表示装置の作製方法
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KR100979926B1 (ko) * 2002-03-05 2010-09-03 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체소자 및 그것을 사용한 반도체장치
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JPS63299278A (ja) * 1987-05-29 1988-12-06 Agency Of Ind Science & Technol 薄膜半導体装置の製造方法
KR19990036851A (ko) * 1997-10-06 1999-05-25 다카노 야스아키 박막 트랜지스터의 제조 방법
JP2001230420A (ja) * 1999-12-10 2001-08-24 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20220038784A (ko) * 2019-08-07 2022-03-29 어플라이드 머티어리얼스, 인코포레이티드 3d nand를 위한 수정된 스택들
KR102821904B1 (ko) 2019-08-07 2025-06-17 어플라이드 머티어리얼스, 인코포레이티드 3d nand를 위한 수정된 스택들

Also Published As

Publication number Publication date
KR20080082478A (ko) 2008-09-11
EP1968111A2 (en) 2008-09-10
US8143118B2 (en) 2012-03-27
US9130051B2 (en) 2015-09-08
US20080220570A1 (en) 2008-09-11
US20120146144A1 (en) 2012-06-14
EP1968111A3 (en) 2014-12-03
JP2008252068A (ja) 2008-10-16

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