KR101433423B1 - 광전 소자들의 제조 방법 및 광전 소자 - Google Patents
광전 소자들의 제조 방법 및 광전 소자 Download PDFInfo
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- KR101433423B1 KR101433423B1 KR1020107001921A KR20107001921A KR101433423B1 KR 101433423 B1 KR101433423 B1 KR 101433423B1 KR 1020107001921 A KR1020107001921 A KR 1020107001921A KR 20107001921 A KR20107001921 A KR 20107001921A KR 101433423 B1 KR101433423 B1 KR 101433423B1
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- semiconductor
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
- H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
- H10H20/018—Bonding of wafers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
- H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W74/00—Encapsulations, e.g. protective coatings
- H10W74/01—Manufacture or treatment
- H10W74/014—Manufacture or treatment using batch processing
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W74/00—Encapsulations, e.g. protective coatings
- H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
- H10W74/111—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed
- H10W74/129—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed forming a chip-scale package [CSP]
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
- H10H20/82—Roughened surfaces, e.g. at the interface between epitaxial layers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/83—Electrodes
- H10H20/831—Electrodes characterised by their shape
- H10H20/8312—Electrodes characterised by their shape extending at least partially through the bodies
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
- H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
- H10P72/7412—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support the auxiliary support including means facilitating the separation of a device or wafer from the auxiliary support
- H10P72/7414—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support the auxiliary support including means facilitating the separation of a device or wafer from the auxiliary support the auxiliary support including means facilitating the selective separation of some of a plurality of devices from the auxiliary support
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
- H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
- H10P72/7428—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used to support diced chips prior to mounting
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
- H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
- H10P72/7432—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used in a transfer process involving transfer directly from an origin substrate to a target substrate without use of an intermediate handle substrate
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
- H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
- H10P72/7438—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support with parts of the auxiliary support remaining in the finished device
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/01—Manufacture or treatment
- H10W72/0198—Manufacture or treatment batch processes
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/071—Connecting or disconnecting
- H10W72/072—Connecting or disconnecting of bump connectors
- H10W72/07202—Connecting or disconnecting of bump connectors using auxiliary members
- H10W72/07204—Connecting or disconnecting of bump connectors using auxiliary members using temporary auxiliary members, e.g. sacrificial coatings
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/071—Connecting or disconnecting
- H10W72/072—Connecting or disconnecting of bump connectors
- H10W72/07231—Techniques
- H10W72/07236—Soldering or alloying
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/071—Connecting or disconnecting
- H10W72/074—Connecting or disconnecting of anisotropic conductive adhesives
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
- H10W72/251—Materials
- H10W72/252—Materials comprising solid metals or solid metalloids, e.g. PbSn, Ag or Cu
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/30—Die-attach connectors
- H10W72/351—Materials of die-attach connectors
- H10W72/352—Materials of die-attach connectors comprising metals or metalloids, e.g. solders
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/30—Die-attach connectors
- H10W72/351—Materials of die-attach connectors
- H10W72/353—Materials of die-attach connectors not comprising solid metals or solid metalloids, e.g. ceramics
- H10W72/354—Materials of die-attach connectors not comprising solid metals or solid metalloids, e.g. ceramics comprising polymers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/90—Bond pads, in general
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/90—Bond pads, in general
- H10W72/941—Dispositions of bond pads
- H10W72/9415—Dispositions of bond pads relative to the surface, e.g. recessed, protruding
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/90—Bond pads, in general
- H10W72/951—Materials of bond pads
- H10W72/952—Materials of bond pads comprising metals or metalloids, e.g. PbSn, Ag or Cu
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W74/00—Encapsulations, e.g. protective coatings
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W74/00—Encapsulations, e.g. protective coatings
- H10W74/01—Manufacture or treatment
- H10W74/012—Manufacture or treatment of encapsulations on active surfaces of flip-chip devices, e.g. forming underfills
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W74/00—Encapsulations, e.g. protective coatings
- H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
- H10W74/15—Encapsulations, e.g. protective coatings characterised by their shape or disposition on active surfaces of flip-chip devices, e.g. underfills
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
- H10W90/721—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
- H10W90/724—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between a chip and a stacked insulating package substrate, interposer or RDL
Landscapes
- Led Device Packages (AREA)
- Photovoltaic Devices (AREA)
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102007030314.0 | 2007-06-29 | ||
| DE102007030314 | 2007-06-29 | ||
| DE102007043877A DE102007043877A1 (de) | 2007-06-29 | 2007-09-14 | Verfahren zur Herstellung von optoelektronischen Bauelementen und optoelektronisches Bauelement |
| DE102007043877.1 | 2007-09-14 | ||
| PCT/DE2008/000776 WO2009003435A1 (de) | 2007-06-29 | 2008-05-07 | Verfahren zur herstellung von optoelektronischen bauelementen und optoelektronisches bauelement |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20100045980A KR20100045980A (ko) | 2010-05-04 |
| KR101433423B1 true KR101433423B1 (ko) | 2014-08-27 |
Family
ID=40092637
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020107001921A Expired - Fee Related KR101433423B1 (ko) | 2007-06-29 | 2008-05-07 | 광전 소자들의 제조 방법 및 광전 소자 |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US20100171215A1 (https=) |
| EP (1) | EP2162927B1 (https=) |
| JP (1) | JP5334966B2 (https=) |
| KR (1) | KR101433423B1 (https=) |
| CN (1) | CN101681964B (https=) |
| DE (1) | DE102007043877A1 (https=) |
| TW (1) | TWI385825B (https=) |
| WO (1) | WO2009003435A1 (https=) |
Families Citing this family (67)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102008030815A1 (de) | 2008-06-30 | 2009-12-31 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung einer Vielzahl von optoelektronischen Bauelementen |
| GB2464102A (en) | 2008-10-01 | 2010-04-07 | Optovate Ltd | Illumination apparatus comprising multiple monolithic subarrays |
| JP5590837B2 (ja) | 2009-09-15 | 2014-09-17 | キヤノン株式会社 | 機能性領域の移設方法 |
| JP5534763B2 (ja) * | 2009-09-25 | 2014-07-02 | 株式会社東芝 | 半導体発光装置の製造方法及び半導体発光装置 |
| DE102009048401A1 (de) | 2009-10-06 | 2011-04-07 | Osram Opto Semiconductors Gmbh | Verfahren zum Herstellen eines optoelektronischen Halbleiterbauteils und optoelektronisches Halbleiterbauteil |
| KR101601622B1 (ko) | 2009-10-13 | 2016-03-09 | 삼성전자주식회사 | 발광다이오드 소자, 발광 장치 및 발광다이오드 소자의 제조방법 |
| DE102010009015A1 (de) | 2010-02-24 | 2011-08-25 | OSRAM Opto Semiconductors GmbH, 93055 | Verfahren zum Herstellen einer Mehrzahl von optoelektronischen Halbleiterchips |
| GB2484713A (en) | 2010-10-21 | 2012-04-25 | Optovate Ltd | Illumination apparatus |
| US8227271B1 (en) * | 2011-01-27 | 2012-07-24 | Himax Technologies Limited | Packaging method of wafer level chips |
| US8241932B1 (en) * | 2011-03-17 | 2012-08-14 | Tsmc Solid State Lighting Ltd. | Methods of fabricating light emitting diode packages |
| KR101766298B1 (ko) * | 2011-03-30 | 2017-08-08 | 삼성전자 주식회사 | 발광소자 및 그 제조방법 |
| US8907362B2 (en) | 2012-01-24 | 2014-12-09 | Cooledge Lighting Inc. | Light-emitting dies incorporating wavelength-conversion materials and related methods |
| US8896010B2 (en) | 2012-01-24 | 2014-11-25 | Cooledge Lighting Inc. | Wafer-level flip chip device packages and related methods |
| US20130187540A1 (en) | 2012-01-24 | 2013-07-25 | Michael A. Tischler | Discrete phosphor chips for light-emitting devices and related methods |
| JP6008940B2 (ja) * | 2012-03-13 | 2016-10-19 | シチズンホールディングス株式会社 | 半導体発光装置及びその製造方法 |
| WO2013150427A1 (en) * | 2012-04-05 | 2013-10-10 | Koninklijke Philips N.V. | Led thin-film device partial singulation prior to substrate thinning or removal |
| US20140048824A1 (en) | 2012-08-15 | 2014-02-20 | Epistar Corporation | Light-emitting device |
| US9356070B2 (en) | 2012-08-15 | 2016-05-31 | Epistar Corporation | Light-emitting device |
| US20140151630A1 (en) * | 2012-12-04 | 2014-06-05 | Feng-Hsu Fan | Protection for the epitaxial structure of metal devices |
| DE102013103079A1 (de) * | 2013-03-26 | 2014-10-02 | Osram Opto Semiconductors Gmbh | Optoelektronischer Halbleiterchip und Verfahren zur Herstellung eines optoelektronischen Halbleiterchips |
| DE102013107531A1 (de) * | 2013-07-16 | 2015-01-22 | Osram Opto Semiconductors Gmbh | Optoelektronischer Halbleiterchip |
| DE102013111496A1 (de) * | 2013-10-18 | 2015-04-23 | Osram Opto Semiconductors Gmbh | Verfahren zum Herstellen von optoelektronischen Halbleiterbauelementen und optoelektronisches Halbleiterbauelement |
| DE102014100542A1 (de) * | 2014-01-20 | 2015-07-23 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung einer lateral strukturierten Schicht und optoelektronisches Halbleiterbauteil mit einer solchen Schicht |
| WO2015119858A1 (en) | 2014-02-05 | 2015-08-13 | Cooledge Lighting Inc. | Light-emitting dies incorporating wavelength-conversion materials and related methods |
| CN117198903A (zh) * | 2014-07-20 | 2023-12-08 | 艾克斯展示公司技术有限公司 | 用于微转贴印刷的设备及方法 |
| CN105789196B (zh) | 2014-12-22 | 2019-10-08 | 日月光半导体制造股份有限公司 | 光学模块及其制造方法 |
| US9972740B2 (en) | 2015-06-07 | 2018-05-15 | Tesla, Inc. | Chemical vapor deposition tool and process for fabrication of photovoltaic structures |
| JP6537410B2 (ja) * | 2015-08-31 | 2019-07-03 | シチズン電子株式会社 | 発光装置の製造方法 |
| DE102015116983B4 (de) * | 2015-10-06 | 2025-09-18 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Verfahren zur Herstellung eines optoelektronischen Halbleiterbauteils und optoelektronisches Halbleiterbauteil |
| EP3913680B1 (fr) * | 2016-05-13 | 2025-07-23 | Commissariat à l'Energie Atomique et aux Energies Alternatives | Procédé de fabrication d'un dispositif optoélectronique comportant une pluralité de diodes au nitrure de gallium |
| US9748434B1 (en) | 2016-05-24 | 2017-08-29 | Tesla, Inc. | Systems, method and apparatus for curing conductive paste |
| US9954136B2 (en) | 2016-08-03 | 2018-04-24 | Tesla, Inc. | Cassette optimized for an inline annealing system |
| US10115856B2 (en) | 2016-10-31 | 2018-10-30 | Tesla, Inc. | System and method for curing conductive paste using induction heating |
| CN108122732B (zh) * | 2016-11-29 | 2020-08-25 | 中芯国际集成电路制造(上海)有限公司 | 一种半导体器件及其制造方法和电子装置 |
| DE102017101536B4 (de) | 2017-01-26 | 2022-06-02 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Verfahren zum Selektieren von Halbleiterchips |
| KR102514503B1 (ko) * | 2017-03-13 | 2023-03-27 | 서울반도체 주식회사 | 디스플레이 장치 제조 방법 |
| GB201705364D0 (en) | 2017-04-03 | 2017-05-17 | Optovate Ltd | Illumination apparatus |
| GB201705365D0 (en) | 2017-04-03 | 2017-05-17 | Optovate Ltd | Illumination apparatus |
| FR3065321B1 (fr) * | 2017-04-14 | 2019-06-21 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Procede de fabrication d'un dispositif d'affichage emissif a led |
| FR3066320B1 (fr) * | 2017-05-11 | 2019-07-12 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Procede de fabrication d'un dispositif d'affichage emissif a led |
| CN107818931B (zh) * | 2017-09-30 | 2021-10-19 | 厦门市三安光电科技有限公司 | 半导体微元件的转移方法及转移装置 |
| GB201718307D0 (en) | 2017-11-05 | 2017-12-20 | Optovate Ltd | Display apparatus |
| GB201800574D0 (en) | 2018-01-14 | 2018-02-28 | Optovate Ltd | Illumination apparatus |
| GB201803767D0 (en) | 2018-03-09 | 2018-04-25 | Optovate Ltd | Illumination apparatus |
| GB201807747D0 (en) | 2018-05-13 | 2018-06-27 | Optovate Ltd | Colour micro-LED display apparatus |
| DE102018120881B4 (de) * | 2018-08-27 | 2025-12-04 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Bauelement und Verfahren zur Herstellung eines Bauelements |
| US11302248B2 (en) | 2019-01-29 | 2022-04-12 | Osram Opto Semiconductors Gmbh | U-led, u-led device, display and method for the same |
| US11156759B2 (en) | 2019-01-29 | 2021-10-26 | Osram Opto Semiconductors Gmbh | μ-LED, μ-LED device, display and method for the same |
| DE112020000561A5 (de) | 2019-01-29 | 2021-12-02 | Osram Opto Semiconductors Gmbh | Videowand, treiberschaltung, ansteuerungen und verfahren derselben |
| US11610868B2 (en) | 2019-01-29 | 2023-03-21 | Osram Opto Semiconductors Gmbh | μ-LED, μ-LED device, display and method for the same |
| DE102019121672A1 (de) * | 2019-08-12 | 2021-02-18 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Verfahren und vorrichtung zum aufnehmen und ablegen von optoelektronischen halbleiterchips |
| US11271143B2 (en) | 2019-01-29 | 2022-03-08 | Osram Opto Semiconductors Gmbh | μ-LED, μ-LED device, display and method for the same |
| WO2020165185A1 (de) | 2019-02-11 | 2020-08-20 | Osram Opto Semiconductors Gmbh | Optoelektronisches bauelement, optoelektronische anordnung und verfahren |
| DE112019006996B4 (de) * | 2019-03-08 | 2025-07-31 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Verfahren zur herstellung optoelektronischer halbleiterbauelemente |
| US12471413B2 (en) | 2019-04-23 | 2025-11-11 | Osram Opto Semiconductors Gmbh | LED module, LED display module and method of manufacturing the same |
| US11538852B2 (en) | 2019-04-23 | 2022-12-27 | Osram Opto Semiconductors Gmbh | μ-LED, μ-LED device, display and method for the same |
| WO2020229013A1 (de) | 2019-05-13 | 2020-11-19 | Osram Opto Semiconductors Gmbh | Multi-chip trägerstruktur |
| KR102939949B1 (ko) | 2019-05-23 | 2026-03-17 | 에이엠에스-오스람 인터내셔널 게엠베하 | 조명 조립체, 광 안내 조립체 및 방법 |
| TWI912252B (zh) | 2019-07-02 | 2026-01-21 | 美商瑞爾D斯帕克有限責任公司 | 定向顯示設備 |
| EP4018236A4 (en) | 2019-08-23 | 2023-09-13 | RealD Spark, LLC | DEVICE FOR DIRECTIONAL LIGHTING AND VISIBILITY DISPLAY |
| WO2021050918A1 (en) | 2019-09-11 | 2021-03-18 | Reald Spark, Llc | Switchable illumination apparatus and privacy display |
| CN114730044B (zh) | 2019-09-11 | 2025-03-21 | 瑞尔D斯帕克有限责任公司 | 定向照明设备和隐私显示器 |
| JP7594578B2 (ja) | 2019-09-20 | 2024-12-04 | エイエムエス-オスラム インターナショナル ゲーエムベーハー | 光電子構造素子、半導体構造およびそれらに関する方法 |
| KR102937412B1 (ko) * | 2019-10-03 | 2026-03-12 | 리얼디 스파크, 엘엘씨 | 수동형 광학 나노구조를 포함하는 조명 장치 |
| KR102893134B1 (ko) | 2019-10-03 | 2025-12-02 | 리얼디 스파크, 엘엘씨 | 수동형 광학 나노구조를 포함하는 조명 장치 |
| US11287562B2 (en) | 2020-02-20 | 2022-03-29 | Reald Spark, Llc | Illumination apparatus including mask with plurality of apertures and display apparatus comprising same |
| US12158602B2 (en) | 2021-06-22 | 2024-12-03 | Reald Spark, Llc | Illumination apparatus |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5617384A (en) * | 1979-07-20 | 1981-02-19 | Tokyo Shibaura Electric Co | Production of display device |
| JPH11191642A (ja) * | 1997-12-26 | 1999-07-13 | Rohm Co Ltd | 半導体発光素子、半導体発光モジュール、およびこれらの製造方法 |
| JP2003209346A (ja) * | 2002-01-16 | 2003-07-25 | Sony Corp | 部品の実装方法及び電子装置 |
| JP2007123311A (ja) * | 2005-10-25 | 2007-05-17 | Kyocera Corp | 照明装置 |
Family Cites Families (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE4305296C3 (de) * | 1993-02-20 | 1999-07-15 | Vishay Semiconductor Gmbh | Verfahren zum Herstellen einer strahlungsemittierenden Diode |
| DE59814431D1 (de) * | 1997-09-29 | 2010-03-25 | Osram Opto Semiconductors Gmbh | Halbleiterlichtquelle und Verfahren zu ihrer Herstellung |
| JP4491948B2 (ja) * | 2000-10-06 | 2010-06-30 | ソニー株式会社 | 素子実装方法および画像表示装置の製造方法 |
| US6795751B2 (en) * | 2000-12-06 | 2004-09-21 | Honeywell International Inc. | System and method to accomplish high-accuracy mixing |
| JP4461616B2 (ja) * | 2000-12-14 | 2010-05-12 | ソニー株式会社 | 素子の転写方法、素子保持基板の形成方法、及び素子保持基板 |
| JP2002241586A (ja) * | 2001-02-19 | 2002-08-28 | Matsushita Electric Ind Co Ltd | 波長変換ペースト材料、複合発光素子、半導体発光装置及びそれらの製造方法 |
| US6417019B1 (en) * | 2001-04-04 | 2002-07-09 | Lumileds Lighting, U.S., Llc | Phosphor converted light emitting diode |
| CN100530705C (zh) * | 2003-01-31 | 2009-08-19 | 奥斯兰姆奥普托半导体有限责任公司 | 用于制造一个半导体元器件的方法 |
| JP4082242B2 (ja) * | 2003-03-06 | 2008-04-30 | ソニー株式会社 | 素子転写方法 |
| US7456035B2 (en) * | 2003-07-29 | 2008-11-25 | Lumination Llc | Flip chip light emitting diode devices having thinned or removed substrates |
| JP2005093649A (ja) * | 2003-09-17 | 2005-04-07 | Oki Data Corp | 半導体複合装置、ledプリントヘッド、及び、それを用いた画像形成装置 |
| US7408566B2 (en) * | 2003-10-22 | 2008-08-05 | Oki Data Corporation | Semiconductor device, LED print head and image-forming apparatus using same, and method of manufacturing semiconductor device |
| CN1918691A (zh) * | 2003-12-24 | 2007-02-21 | 吉尔科有限公司 | 从氮化物倒装芯片激光去除蓝宝石 |
| NL1029688C2 (nl) * | 2005-08-05 | 2007-02-06 | Lemnis Lighting Ip Gmbh | Werkwijze voor het vervaardigen van een elektrische schakeling voorzien van een veelvoud van LED's. |
| US7125734B2 (en) * | 2005-03-09 | 2006-10-24 | Gelcore, Llc | Increased light extraction from a nitride LED |
| US7290946B2 (en) * | 2005-03-11 | 2007-11-06 | Cortek Opto Corp. | Optical subassembly |
| US7673466B2 (en) * | 2005-08-31 | 2010-03-09 | Pacy David H | Auxiliary power device for refrigerated trucks |
| US8168989B2 (en) * | 2005-09-20 | 2012-05-01 | Renesas Electronics Corporation | LED light source and method of manufacturing the same |
| KR100714589B1 (ko) * | 2005-10-05 | 2007-05-07 | 삼성전기주식회사 | 수직구조 발광 다이오드의 제조 방법 |
| US20070200063A1 (en) * | 2006-02-28 | 2007-08-30 | Virgin Islands Microsystems, Inc. | Wafer-level testing of light-emitting resonant structures |
-
2007
- 2007-09-14 DE DE102007043877A patent/DE102007043877A1/de not_active Ceased
-
2008
- 2008-05-02 TW TW097116327A patent/TWI385825B/zh not_active IP Right Cessation
- 2008-05-07 EP EP08758035.3A patent/EP2162927B1/de not_active Not-in-force
- 2008-05-07 WO PCT/DE2008/000776 patent/WO2009003435A1/de not_active Ceased
- 2008-05-07 CN CN2008800180191A patent/CN101681964B/zh not_active Expired - Fee Related
- 2008-05-07 JP JP2010513638A patent/JP5334966B2/ja not_active Expired - Fee Related
- 2008-05-07 KR KR1020107001921A patent/KR101433423B1/ko not_active Expired - Fee Related
- 2008-05-07 US US12/663,669 patent/US20100171215A1/en not_active Abandoned
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5617384A (en) * | 1979-07-20 | 1981-02-19 | Tokyo Shibaura Electric Co | Production of display device |
| JPH11191642A (ja) * | 1997-12-26 | 1999-07-13 | Rohm Co Ltd | 半導体発光素子、半導体発光モジュール、およびこれらの製造方法 |
| JP2003209346A (ja) * | 2002-01-16 | 2003-07-25 | Sony Corp | 部品の実装方法及び電子装置 |
| JP2007123311A (ja) * | 2005-10-25 | 2007-05-17 | Kyocera Corp | 照明装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| CN101681964A (zh) | 2010-03-24 |
| CN101681964B (zh) | 2013-05-08 |
| JP5334966B2 (ja) | 2013-11-06 |
| TWI385825B (zh) | 2013-02-11 |
| JP2010532089A (ja) | 2010-09-30 |
| TW200905930A (en) | 2009-02-01 |
| EP2162927B1 (de) | 2018-10-24 |
| EP2162927A1 (de) | 2010-03-17 |
| KR20100045980A (ko) | 2010-05-04 |
| US20100171215A1 (en) | 2010-07-08 |
| WO2009003435A1 (de) | 2009-01-08 |
| DE102007043877A1 (de) | 2009-01-08 |
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