DE102007043877A1 - Verfahren zur Herstellung von optoelektronischen Bauelementen und optoelektronisches Bauelement - Google Patents

Verfahren zur Herstellung von optoelektronischen Bauelementen und optoelektronisches Bauelement Download PDF

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Publication number
DE102007043877A1
DE102007043877A1 DE102007043877A DE102007043877A DE102007043877A1 DE 102007043877 A1 DE102007043877 A1 DE 102007043877A1 DE 102007043877 A DE102007043877 A DE 102007043877A DE 102007043877 A DE102007043877 A DE 102007043877A DE 102007043877 A1 DE102007043877 A1 DE 102007043877A1
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Germany
Prior art keywords
semiconductor
component carrier
bodies
semiconductor body
component
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
DE102007043877A
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German (de)
English (en)
Inventor
Helmut Fischer
Dieter Dr. Eissler
Alexander Heindl
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ams Osram International GmbH
Original Assignee
Osram Opto Semiconductors GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Opto Semiconductors GmbH filed Critical Osram Opto Semiconductors GmbH
Priority to DE102007043877A priority Critical patent/DE102007043877A1/de
Priority to TW097116327A priority patent/TWI385825B/zh
Priority to JP2010513638A priority patent/JP5334966B2/ja
Priority to EP08758035.3A priority patent/EP2162927B1/de
Priority to PCT/DE2008/000776 priority patent/WO2009003435A1/de
Priority to KR1020107001921A priority patent/KR101433423B1/ko
Priority to CN2008800180191A priority patent/CN101681964B/zh
Priority to US12/663,669 priority patent/US20100171215A1/en
Publication of DE102007043877A1 publication Critical patent/DE102007043877A1/de
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/01—Manufacture or treatment
    • H10W74/014—Manufacture or treatment using batch processing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/111—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed
    • H10W74/129—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed forming a chip-scale package [CSP]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/82—Roughened surfaces, e.g. at the interface between epitaxial layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H10H20/8312—Electrodes characterised by their shape extending at least partially through the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7412—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support the auxiliary support including means facilitating the separation of a device or wafer from the auxiliary support
    • H10P72/7414—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support the auxiliary support including means facilitating the separation of a device or wafer from the auxiliary support the auxiliary support including means facilitating the selective separation of some of a plurality of devices from the auxiliary support
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7428—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used to support diced chips prior to mounting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7432—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used in a transfer process involving transfer directly from an origin substrate to a target substrate without use of an intermediate handle substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7438—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support with parts of the auxiliary support remaining in the finished device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/0198—Manufacture or treatment batch processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/072—Connecting or disconnecting of bump connectors
    • H10W72/07202—Connecting or disconnecting of bump connectors using auxiliary members
    • H10W72/07204—Connecting or disconnecting of bump connectors using auxiliary members using temporary auxiliary members, e.g. sacrificial coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/072—Connecting or disconnecting of bump connectors
    • H10W72/07231—Techniques
    • H10W72/07236—Soldering or alloying
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/074—Connecting or disconnecting of anisotropic conductive adhesives
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/251—Materials
    • H10W72/252—Materials comprising solid metals or solid metalloids, e.g. PbSn, Ag or Cu
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/30—Die-attach connectors
    • H10W72/351—Materials of die-attach connectors
    • H10W72/352—Materials of die-attach connectors comprising metals or metalloids, e.g. solders
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/30—Die-attach connectors
    • H10W72/351—Materials of die-attach connectors
    • H10W72/353—Materials of die-attach connectors not comprising solid metals or solid metalloids, e.g. ceramics
    • H10W72/354—Materials of die-attach connectors not comprising solid metals or solid metalloids, e.g. ceramics comprising polymers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/941—Dispositions of bond pads
    • H10W72/9415—Dispositions of bond pads relative to the surface, e.g. recessed, protruding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/951—Materials of bond pads
    • H10W72/952—Materials of bond pads comprising metals or metalloids, e.g. PbSn, Ag or Cu
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/01—Manufacture or treatment
    • H10W74/012—Manufacture or treatment of encapsulations on active surfaces of flip-chip devices, e.g. forming underfills
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/15—Encapsulations, e.g. protective coatings characterised by their shape or disposition on active surfaces of flip-chip devices, e.g. underfills
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/721—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
    • H10W90/724—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between a chip and a stacked insulating package substrate, interposer or RDL

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DE102007043877A 2007-06-29 2007-09-14 Verfahren zur Herstellung von optoelektronischen Bauelementen und optoelektronisches Bauelement Ceased DE102007043877A1 (de)

Priority Applications (8)

Application Number Priority Date Filing Date Title
DE102007043877A DE102007043877A1 (de) 2007-06-29 2007-09-14 Verfahren zur Herstellung von optoelektronischen Bauelementen und optoelektronisches Bauelement
TW097116327A TWI385825B (zh) 2007-06-29 2008-05-02 光電元件及其製造方法
JP2010513638A JP5334966B2 (ja) 2007-06-29 2008-05-07 光電構成素子の製造方法
EP08758035.3A EP2162927B1 (de) 2007-06-29 2008-05-07 Verfahren zur herstellung von optoelektronischen bauelementen
PCT/DE2008/000776 WO2009003435A1 (de) 2007-06-29 2008-05-07 Verfahren zur herstellung von optoelektronischen bauelementen und optoelektronisches bauelement
KR1020107001921A KR101433423B1 (ko) 2007-06-29 2008-05-07 광전 소자들의 제조 방법 및 광전 소자
CN2008800180191A CN101681964B (zh) 2007-06-29 2008-05-07 用于制造光电子器件的方法以及光电子器件
US12/663,669 US20100171215A1 (en) 2007-06-29 2008-05-07 Method of Producing Optoelectronic Components and Optoelectronic Component

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102007030314 2007-06-29
DE102007030314.0 2007-06-29
DE102007043877A DE102007043877A1 (de) 2007-06-29 2007-09-14 Verfahren zur Herstellung von optoelektronischen Bauelementen und optoelektronisches Bauelement

Publications (1)

Publication Number Publication Date
DE102007043877A1 true DE102007043877A1 (de) 2009-01-08

Family

ID=40092637

Family Applications (1)

Application Number Title Priority Date Filing Date
DE102007043877A Ceased DE102007043877A1 (de) 2007-06-29 2007-09-14 Verfahren zur Herstellung von optoelektronischen Bauelementen und optoelektronisches Bauelement

Country Status (8)

Country Link
US (1) US20100171215A1 (https=)
EP (1) EP2162927B1 (https=)
JP (1) JP5334966B2 (https=)
KR (1) KR101433423B1 (https=)
CN (1) CN101681964B (https=)
DE (1) DE102007043877A1 (https=)
TW (1) TWI385825B (https=)
WO (1) WO2009003435A1 (https=)

Cited By (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011033758A3 (en) * 2009-09-15 2011-07-14 Canon Kabushiki Kaisha Substrate structure including functional region and method for transferring functional region
US8431422B2 (en) 2008-06-30 2013-04-30 Osram Opto Semiconductors Gmbh Method for producing a multiplicity of optoelectronic components
EP2302703A3 (en) * 2009-09-25 2014-04-30 Kabushiki Kaisha Toshiba Method for manufacturing semiconductor light-emitting device and semiconductor light emitting device
WO2015055346A1 (de) * 2013-10-18 2015-04-23 Osram Opto Semiconductors Gmbh Optoelektronischens halbleiterbauelement und sein herstellungsverfahren
WO2020043466A1 (de) * 2018-08-27 2020-03-05 Osram Oled Gmbh Bauelement und verfahren zur herstellung eines bauelements
DE102019121672A1 (de) * 2019-08-12 2021-02-18 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren und vorrichtung zum aufnehmen und ablegen von optoelektronischen halbleiterchips
US11156759B2 (en) 2019-01-29 2021-10-26 Osram Opto Semiconductors Gmbh μ-LED, μ-LED device, display and method for the same
US11271143B2 (en) 2019-01-29 2022-03-08 Osram Opto Semiconductors Gmbh μ-LED, μ-LED device, display and method for the same
US11302248B2 (en) 2019-01-29 2022-04-12 Osram Opto Semiconductors Gmbh U-led, u-led device, display and method for the same
US11538852B2 (en) 2019-04-23 2022-12-27 Osram Opto Semiconductors Gmbh μ-LED, μ-LED device, display and method for the same
US11610868B2 (en) 2019-01-29 2023-03-21 Osram Opto Semiconductors Gmbh μ-LED, μ-LED device, display and method for the same
US12183261B2 (en) 2019-01-29 2024-12-31 Osram Opto Semiconductors Gmbh Video wall, driver circuits, controls and method thereof
US12189280B2 (en) 2019-05-23 2025-01-07 Osram Opto Semiconductors Gmbh Lighting arrangement, light guide arrangement and method
US12261256B2 (en) 2019-02-11 2025-03-25 Osram Opto Semiconductors Gmbh Optoelectronic component, optoelectronic arrangement and method
US12266641B2 (en) 2019-05-13 2025-04-01 Osram Opto Semiconductors Gmbh Multi-chip carrier structure
US12294039B2 (en) 2019-09-20 2025-05-06 Osram Opto Semiconductors Gmbh Optoelectronic component, semiconductor structure and method
US12471413B2 (en) 2019-04-23 2025-11-11 Osram Opto Semiconductors Gmbh LED module, LED display module and method of manufacturing the same
US12613423B2 (en) 2019-05-14 2026-04-28 Osram Opto Semiconductors Gmbh Illumination unit, method for producing an illumination unit, converter element for an optoelectronic component, radiation source including an LED and a converter element, outcoupling structure, and optoelectronic device

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Publication number Priority date Publication date Assignee Title
GB2464102A (en) * 2008-10-01 2010-04-07 Optovate Ltd Illumination apparatus comprising multiple monolithic subarrays
DE102009048401A1 (de) 2009-10-06 2011-04-07 Osram Opto Semiconductors Gmbh Verfahren zum Herstellen eines optoelektronischen Halbleiterbauteils und optoelektronisches Halbleiterbauteil
KR101601622B1 (ko) * 2009-10-13 2016-03-09 삼성전자주식회사 발광다이오드 소자, 발광 장치 및 발광다이오드 소자의 제조방법
DE102010009015A1 (de) * 2010-02-24 2011-08-25 OSRAM Opto Semiconductors GmbH, 93055 Verfahren zum Herstellen einer Mehrzahl von optoelektronischen Halbleiterchips
GB2484713A (en) 2010-10-21 2012-04-25 Optovate Ltd Illumination apparatus
US8227271B1 (en) * 2011-01-27 2012-07-24 Himax Technologies Limited Packaging method of wafer level chips
US8241932B1 (en) * 2011-03-17 2012-08-14 Tsmc Solid State Lighting Ltd. Methods of fabricating light emitting diode packages
KR101766298B1 (ko) * 2011-03-30 2017-08-08 삼성전자 주식회사 발광소자 및 그 제조방법
US8896010B2 (en) 2012-01-24 2014-11-25 Cooledge Lighting Inc. Wafer-level flip chip device packages and related methods
US8907362B2 (en) 2012-01-24 2014-12-09 Cooledge Lighting Inc. Light-emitting dies incorporating wavelength-conversion materials and related methods
WO2013112435A1 (en) 2012-01-24 2013-08-01 Cooledge Lighting Inc. Light - emitting devices having discrete phosphor chips and fabrication methods
US9269873B2 (en) * 2012-03-13 2016-02-23 Citizen Holdings Co., Ltd. Semiconductor light emitting device and method for manufacturing same
US9847445B2 (en) * 2012-04-05 2017-12-19 Koninklijke Philips N.V. LED thin-film device partial singulation prior to substrate thinning or removal
US9356070B2 (en) 2012-08-15 2016-05-31 Epistar Corporation Light-emitting device
US20140048824A1 (en) * 2012-08-15 2014-02-20 Epistar Corporation Light-emitting device
US20140151630A1 (en) * 2012-12-04 2014-06-05 Feng-Hsu Fan Protection for the epitaxial structure of metal devices
DE102013103079A1 (de) * 2013-03-26 2014-10-02 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip und Verfahren zur Herstellung eines optoelektronischen Halbleiterchips
DE102013107531A1 (de) * 2013-07-16 2015-01-22 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip
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