KR101420471B1 - 포토레지스트 박리제조성물 - Google Patents
포토레지스트 박리제조성물 Download PDFInfo
- Publication number
- KR101420471B1 KR101420471B1 KR1020097024223A KR20097024223A KR101420471B1 KR 101420471 B1 KR101420471 B1 KR 101420471B1 KR 1020097024223 A KR1020097024223 A KR 1020097024223A KR 20097024223 A KR20097024223 A KR 20097024223A KR 101420471 B1 KR101420471 B1 KR 101420471B1
- Authority
- KR
- South Korea
- Prior art keywords
- weight
- photoresist
- sorbitol
- group
- uracil
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JPJP-P-2007-129699 | 2007-05-15 | ||
| JP2007129699A JP4716225B2 (ja) | 2007-05-15 | 2007-05-15 | フォトレジスト剥離剤組成物 |
| PCT/JP2008/058750 WO2008140076A1 (ja) | 2007-05-15 | 2008-05-13 | フォトレジスト剥離剤組成物 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20100017192A KR20100017192A (ko) | 2010-02-16 |
| KR101420471B1 true KR101420471B1 (ko) | 2014-07-16 |
Family
ID=40002266
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020097024223A Active KR101420471B1 (ko) | 2007-05-15 | 2008-05-13 | 포토레지스트 박리제조성물 |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JP4716225B2 (enExample) |
| KR (1) | KR101420471B1 (enExample) |
| CN (1) | CN101681129B (enExample) |
| TW (1) | TWI434150B (enExample) |
| WO (1) | WO2008140076A1 (enExample) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102124414B (zh) * | 2009-04-17 | 2014-04-02 | 长瀬化成株式会社 | 光致抗蚀剂剥离剂组合物以及光致抗蚀剂剥离方法 |
| JP5890306B2 (ja) * | 2009-07-29 | 2016-03-22 | 東友ファインケム株式会社Dongwoo Fine−Chem Co., Ltd. | 洗浄液組成物及びこれを用いたパネルの洗浄方法 |
| JP5023128B2 (ja) * | 2009-10-07 | 2012-09-12 | 東京エレクトロン株式会社 | 塗布現像装置及び塗布現像方法 |
| JP5709075B2 (ja) * | 2010-09-10 | 2015-04-30 | ナガセケムテックス株式会社 | リン酸及び/又はリン酸塩の水溶液のパーティクル数経時安定化方法及びレジスト残渣剥離剤組成物 |
| KR101089211B1 (ko) * | 2010-12-02 | 2011-12-02 | 엘티씨 (주) | 1차 알칸올 아민을 포함하는 lcd 제조용 포토레지스트 박리액 조성물 |
| JP5885046B1 (ja) * | 2015-03-24 | 2016-03-15 | パナソニックIpマネジメント株式会社 | レジスト剥離液 |
| CN111781808B (zh) * | 2015-09-16 | 2024-06-07 | 东友精细化工有限公司 | 抗蚀剂剥离液组合物、平板显示器基板及其制造方法 |
| WO2017065153A1 (ja) * | 2015-10-13 | 2017-04-20 | ナガセケムテックス株式会社 | フォトレジスト剥離液 |
| JP6160893B1 (ja) * | 2016-09-30 | 2017-07-12 | パナソニックIpマネジメント株式会社 | レジスト剥離液 |
| JP7176089B2 (ja) | 2018-07-20 | 2022-11-21 | インテグリス・インコーポレーテッド | 腐食防止剤を含む洗浄組成物 |
| KR102334425B1 (ko) * | 2019-11-21 | 2021-12-01 | 엘티씨 (주) | 디스플레이 제조용 포토레지스트 박리액 조성물 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001350276A (ja) | 2000-06-05 | 2001-12-21 | Nagase Kasei Kogyo Kk | フォトレジスト剥離剤組成物及びその使用方法 |
| JP2002351093A (ja) | 2001-05-22 | 2002-12-04 | Nagase Chemtex Corp | レジスト剥離用組成物 |
| JP2004287288A (ja) | 2003-03-24 | 2004-10-14 | Nagase Chemtex Corp | レジスト剥離用組成物及びレジスト剥離方法 |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08262746A (ja) * | 1995-03-28 | 1996-10-11 | Mitsubishi Gas Chem Co Inc | フォトレジスト剥離剤組成物および剥離方法 |
| JP4628209B2 (ja) * | 2004-11-18 | 2011-02-09 | 花王株式会社 | 剥離剤組成物 |
| JP4692497B2 (ja) * | 2007-02-28 | 2011-06-01 | ナガセケムテックス株式会社 | フォトレジスト剥離剤組成物 |
-
2007
- 2007-05-15 JP JP2007129699A patent/JP4716225B2/ja active Active
-
2008
- 2008-05-05 TW TW097116444A patent/TWI434150B/zh active
- 2008-05-13 CN CN2008800160126A patent/CN101681129B/zh active Active
- 2008-05-13 KR KR1020097024223A patent/KR101420471B1/ko active Active
- 2008-05-13 WO PCT/JP2008/058750 patent/WO2008140076A1/ja not_active Ceased
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001350276A (ja) | 2000-06-05 | 2001-12-21 | Nagase Kasei Kogyo Kk | フォトレジスト剥離剤組成物及びその使用方法 |
| JP2002351093A (ja) | 2001-05-22 | 2002-12-04 | Nagase Chemtex Corp | レジスト剥離用組成物 |
| JP2004287288A (ja) | 2003-03-24 | 2004-10-14 | Nagase Chemtex Corp | レジスト剥離用組成物及びレジスト剥離方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JP4716225B2 (ja) | 2011-07-06 |
| CN101681129A (zh) | 2010-03-24 |
| KR20100017192A (ko) | 2010-02-16 |
| WO2008140076A1 (ja) | 2008-11-20 |
| JP2008286881A (ja) | 2008-11-27 |
| CN101681129B (zh) | 2012-05-30 |
| TW200900884A (en) | 2009-01-01 |
| TWI434150B (zh) | 2014-04-11 |
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