TWI434150B - 光阻剝離劑組成物 - Google Patents
光阻剝離劑組成物 Download PDFInfo
- Publication number
- TWI434150B TWI434150B TW097116444A TW97116444A TWI434150B TW I434150 B TWI434150 B TW I434150B TW 097116444 A TW097116444 A TW 097116444A TW 97116444 A TW97116444 A TW 97116444A TW I434150 B TWI434150 B TW I434150B
- Authority
- TW
- Taiwan
- Prior art keywords
- alloy wiring
- forming
- photoresist stripper
- stripper composition
- group
- Prior art date
Links
- 229920002120 photoresistant polymer Polymers 0.000 title claims description 82
- 239000000203 mixture Substances 0.000 title claims description 51
- 229910052802 copper Inorganic materials 0.000 claims description 61
- 229910052782 aluminium Inorganic materials 0.000 claims description 52
- 229910000881 Cu alloy Inorganic materials 0.000 claims description 48
- 229910000838 Al alloy Inorganic materials 0.000 claims description 41
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 25
- 150000001412 amines Chemical class 0.000 claims description 17
- 150000005846 sugar alcohols Chemical class 0.000 claims description 13
- DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical compound CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 claims description 12
- 150000002391 heterocyclic compounds Chemical class 0.000 claims description 12
- 238000000034 method Methods 0.000 claims description 11
- 239000003495 polar organic solvent Substances 0.000 claims description 11
- ISAKRJDGNUQOIC-UHFFFAOYSA-N Uracil Chemical compound O=C1C=CNC(=O)N1 ISAKRJDGNUQOIC-UHFFFAOYSA-N 0.000 claims description 8
- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical compound CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 claims description 6
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 claims description 6
- 150000003973 alkyl amines Chemical group 0.000 claims description 6
- HXKKHQJGJAFBHI-UHFFFAOYSA-N 1-aminopropan-2-ol Chemical compound CC(O)CN HXKKHQJGJAFBHI-UHFFFAOYSA-N 0.000 claims description 5
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical compound NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 claims description 5
- FBPFZTCFMRRESA-FSIIMWSLSA-N D-Glucitol Natural products OC[C@H](O)[C@H](O)[C@@H](O)[C@H](O)CO FBPFZTCFMRRESA-FSIIMWSLSA-N 0.000 claims description 5
- FBPFZTCFMRRESA-JGWLITMVSA-N D-glucitol Chemical compound OC[C@H](O)[C@@H](O)[C@H](O)[C@H](O)CO FBPFZTCFMRRESA-JGWLITMVSA-N 0.000 claims description 5
- OPKOKAMJFNKNAS-UHFFFAOYSA-N N-methylethanolamine Chemical compound CNCCO OPKOKAMJFNKNAS-UHFFFAOYSA-N 0.000 claims description 5
- WUGQZFFCHPXWKQ-UHFFFAOYSA-N Propanolamine Chemical compound NCCCO WUGQZFFCHPXWKQ-UHFFFAOYSA-N 0.000 claims description 5
- TVXBFESIOXBWNM-UHFFFAOYSA-N Xylitol Natural products OCCC(O)C(O)C(O)CCO TVXBFESIOXBWNM-UHFFFAOYSA-N 0.000 claims description 5
- 229940028356 diethylene glycol monobutyl ether Drugs 0.000 claims description 5
- 229940113088 dimethylacetamide Drugs 0.000 claims description 5
- HEBKCHPVOIAQTA-UHFFFAOYSA-N meso ribitol Natural products OCC(O)C(O)C(O)CO HEBKCHPVOIAQTA-UHFFFAOYSA-N 0.000 claims description 5
- JCGNDDUYTRNOFT-UHFFFAOYSA-N oxolane-2,4-dione Chemical compound O=C1COC(=O)C1 JCGNDDUYTRNOFT-UHFFFAOYSA-N 0.000 claims description 5
- 239000000600 sorbitol Substances 0.000 claims description 5
- 239000000811 xylitol Substances 0.000 claims description 5
- 235000010447 xylitol Nutrition 0.000 claims description 5
- HEBKCHPVOIAQTA-SCDXWVJYSA-N xylitol Chemical compound OC[C@H](O)[C@@H](O)[C@H](O)CO HEBKCHPVOIAQTA-SCDXWVJYSA-N 0.000 claims description 5
- 229960002675 xylitol Drugs 0.000 claims description 5
- ZBCBWPMODOFKDW-UHFFFAOYSA-N diethanolamine Chemical compound OCCNCCO ZBCBWPMODOFKDW-UHFFFAOYSA-N 0.000 claims description 4
- XXJWXESWEXIICW-UHFFFAOYSA-N diethylene glycol monoethyl ether Chemical compound CCOCCOCCO XXJWXESWEXIICW-UHFFFAOYSA-N 0.000 claims description 4
- 229940075557 diethylene glycol monoethyl ether Drugs 0.000 claims description 4
- 229940035893 uracil Drugs 0.000 claims description 4
- DIIIISSCIXVANO-UHFFFAOYSA-N 1,2-Dimethylhydrazine Chemical compound CNNC DIIIISSCIXVANO-UHFFFAOYSA-N 0.000 claims description 3
- KODLUXHSIZOKTG-UHFFFAOYSA-N 1-aminobutan-2-ol Chemical compound CCC(O)CN KODLUXHSIZOKTG-UHFFFAOYSA-N 0.000 claims description 3
- SBASXUCJHJRPEV-UHFFFAOYSA-N 2-(2-methoxyethoxy)ethanol Chemical compound COCCOCCO SBASXUCJHJRPEV-UHFFFAOYSA-N 0.000 claims description 3
- SHVCSCWHWMSGTE-UHFFFAOYSA-N 6-methyluracil Chemical compound CC1=CC(=O)NC(=O)N1 SHVCSCWHWMSGTE-UHFFFAOYSA-N 0.000 claims description 3
- JPIGSMKDJQPHJC-UHFFFAOYSA-N 1-(2-aminoethoxy)ethanol Chemical compound CC(O)OCCN JPIGSMKDJQPHJC-UHFFFAOYSA-N 0.000 claims description 2
- VILCJCGEZXAXTO-UHFFFAOYSA-N 2,2,2-tetramine Chemical compound NCCNCCNCCN VILCJCGEZXAXTO-UHFFFAOYSA-N 0.000 claims 1
- 238000005260 corrosion Methods 0.000 description 32
- 230000007797 corrosion Effects 0.000 description 29
- 206010040844 Skin exfoliation Diseases 0.000 description 25
- 239000003795 chemical substances by application Substances 0.000 description 25
- 238000005530 etching Methods 0.000 description 22
- 239000007788 liquid Substances 0.000 description 17
- 239000000463 material Substances 0.000 description 16
- 238000011156 evaluation Methods 0.000 description 10
- 239000000758 substrate Substances 0.000 description 10
- 230000000052 comparative effect Effects 0.000 description 9
- 238000004519 manufacturing process Methods 0.000 description 9
- 150000001875 compounds Chemical class 0.000 description 7
- HDHQZCHIXUUSMK-UHFFFAOYSA-N 4-hydroxy-2-quinolone Chemical compound C1=CC=C2C(O)=CC(=O)NC2=C1 HDHQZCHIXUUSMK-UHFFFAOYSA-N 0.000 description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 238000005406 washing Methods 0.000 description 6
- 230000006866 deterioration Effects 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 229910052757 nitrogen Inorganic materials 0.000 description 5
- VXIXUWQIVKSKSA-UHFFFAOYSA-N 4-hydroxycoumarin Chemical compound C1=CC=CC2=C1OC(=O)C=C2O VXIXUWQIVKSKSA-UHFFFAOYSA-N 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000004973 liquid crystal related substance Substances 0.000 description 4
- SWELIMKTDYHAOY-UHFFFAOYSA-N 2,4-diamino-6-hydroxypyrimidine Chemical compound NC1=CC(=O)N=C(N)N1 SWELIMKTDYHAOY-UHFFFAOYSA-N 0.000 description 3
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 description 3
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- -1 amine compound Chemical class 0.000 description 3
- 239000000845 maltitol Substances 0.000 description 3
- 235000010449 maltitol Nutrition 0.000 description 3
- VQHSOMBJVWLPSR-WUJBLJFYSA-N maltitol Chemical compound OC[C@H](O)[C@@H](O)[C@@H]([C@H](O)CO)O[C@H]1O[C@H](CO)[C@@H](O)[C@H](O)[C@H]1O VQHSOMBJVWLPSR-WUJBLJFYSA-N 0.000 description 3
- 229940035436 maltitol Drugs 0.000 description 3
- 239000007800 oxidant agent Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- NSYSSMYQPLSPOD-UHFFFAOYSA-N triacetate lactone Chemical compound CC1=CC(O)=CC(=O)O1 NSYSSMYQPLSPOD-UHFFFAOYSA-N 0.000 description 3
- 238000001039 wet etching Methods 0.000 description 3
- AUFJTVGCSJNQIF-UHFFFAOYSA-N 2-Amino-4,6-dihydroxypyrimidine Chemical compound NC1=NC(O)=CC(=O)N1 AUFJTVGCSJNQIF-UHFFFAOYSA-N 0.000 description 2
- WHEQVHAIRSPYDK-UHFFFAOYSA-N 4,6-dimethyl-1h-pyrimidin-2-one Chemical compound CC1=CC(C)=NC(O)=N1 WHEQVHAIRSPYDK-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 125000000623 heterocyclic group Chemical group 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 229910052748 manganese Inorganic materials 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- PVXVWWANJIWJOO-UHFFFAOYSA-N 1-(1,3-benzodioxol-5-yl)-N-ethylpropan-2-amine Chemical compound CCNC(C)CC1=CC=C2OCOC2=C1 PVXVWWANJIWJOO-UHFFFAOYSA-N 0.000 description 1
- SERLAGPUMNYUCK-DCUALPFSSA-N 1-O-alpha-D-glucopyranosyl-D-mannitol Chemical compound OC[C@@H](O)[C@@H](O)[C@H](O)[C@H](O)CO[C@H]1O[C@H](CO)[C@@H](O)[C@H](O)[C@H]1O SERLAGPUMNYUCK-DCUALPFSSA-N 0.000 description 1
- CNJRPYFBORAQAU-UHFFFAOYSA-N 1-ethoxy-2-(2-methoxyethoxy)ethane Chemical compound CCOCCOCCOC CNJRPYFBORAQAU-UHFFFAOYSA-N 0.000 description 1
- VTSWSQGDJQFXHB-UHFFFAOYSA-N 2,4,6-trichloro-5-methylpyrimidine Chemical compound CC1=C(Cl)N=C(Cl)N=C1Cl VTSWSQGDJQFXHB-UHFFFAOYSA-N 0.000 description 1
- VSYFZULSKMFUJJ-UHFFFAOYSA-N 2,6-dimethylpyran-4-one Chemical group CC1=CC(=O)C=C(C)O1 VSYFZULSKMFUJJ-UHFFFAOYSA-N 0.000 description 1
- GOJUJUVQIVIZAV-UHFFFAOYSA-N 2-amino-4,6-dichloropyrimidine-5-carbaldehyde Chemical group NC1=NC(Cl)=C(C=O)C(Cl)=N1 GOJUJUVQIVIZAV-UHFFFAOYSA-N 0.000 description 1
- KWXIPEYKZKIAKR-UHFFFAOYSA-N 2-amino-4-hydroxy-6-methylpyrimidine Chemical compound CC1=CC(O)=NC(N)=N1 KWXIPEYKZKIAKR-UHFFFAOYSA-N 0.000 description 1
- MGFQUYGIHQXMSC-UHFFFAOYSA-N 2-ethoxybutan-2-ol Chemical compound CCOC(C)(O)CC MGFQUYGIHQXMSC-UHFFFAOYSA-N 0.000 description 1
- ZNQVEEAIQZEUHB-UHFFFAOYSA-N 2-ethoxyethanol Chemical compound CCOCCO ZNQVEEAIQZEUHB-UHFFFAOYSA-N 0.000 description 1
- 229910018464 Al—Mg—Si Inorganic materials 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- FBPFZTCFMRRESA-KVTDHHQDSA-N D-Mannitol Chemical compound OC[C@@H](O)[C@@H](O)[C@H](O)[C@H](O)CO FBPFZTCFMRRESA-KVTDHHQDSA-N 0.000 description 1
- QMMZSJPSPRTHGB-UHFFFAOYSA-N MDEA Natural products CC(C)CCCCC=CCC=CC(O)=O QMMZSJPSPRTHGB-UHFFFAOYSA-N 0.000 description 1
- 229930195725 Mannitol Natural products 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- LEHOTFFKMJEONL-UHFFFAOYSA-N Uric Acid Chemical compound N1C(=O)NC(=O)C2=C1NC(=O)N2 LEHOTFFKMJEONL-UHFFFAOYSA-N 0.000 description 1
- TVWHNULVHGKJHS-UHFFFAOYSA-N Uric acid Natural products N1C(=O)NC(=O)C2NC(=O)NC21 TVWHNULVHGKJHS-UHFFFAOYSA-N 0.000 description 1
- 229940037003 alum Drugs 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- 229910052790 beryllium Inorganic materials 0.000 description 1
- 239000003518 caustics Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical compound OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 229910001325 element alloy Inorganic materials 0.000 description 1
- 235000019441 ethanol Nutrition 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- OAKJQQAXSVQMHS-UHFFFAOYSA-N hydrazine Substances NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 239000003112 inhibitor Substances 0.000 description 1
- 150000007529 inorganic bases Chemical class 0.000 description 1
- 239000000832 lactitol Substances 0.000 description 1
- 235000010448 lactitol Nutrition 0.000 description 1
- VQHSOMBJVWLPSR-JVCRWLNRSA-N lactitol Chemical compound OC[C@H](O)[C@@H](O)[C@@H]([C@H](O)CO)O[C@@H]1O[C@H](CO)[C@H](O)[C@H](O)[C@H]1O VQHSOMBJVWLPSR-JVCRWLNRSA-N 0.000 description 1
- 229960003451 lactitol Drugs 0.000 description 1
- 229910052745 lead Inorganic materials 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000000594 mannitol Substances 0.000 description 1
- 235000010355 mannitol Nutrition 0.000 description 1
- 229960001855 mannitol Drugs 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 150000007522 mineralic acids Chemical class 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000000178 monomer Substances 0.000 description 1
- 125000004433 nitrogen atom Chemical group N* 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 150000007524 organic acids Chemical class 0.000 description 1
- 150000007530 organic bases Chemical class 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 239000002798 polar solvent Substances 0.000 description 1
- 150000003141 primary amines Chemical class 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 150000003335 secondary amines Chemical class 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 229940116269 uric acid Drugs 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007129699A JP4716225B2 (ja) | 2007-05-15 | 2007-05-15 | フォトレジスト剥離剤組成物 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200900884A TW200900884A (en) | 2009-01-01 |
| TWI434150B true TWI434150B (zh) | 2014-04-11 |
Family
ID=40002266
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW097116444A TWI434150B (zh) | 2007-05-15 | 2008-05-05 | 光阻剝離劑組成物 |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JP4716225B2 (enExample) |
| KR (1) | KR101420471B1 (enExample) |
| CN (1) | CN101681129B (enExample) |
| TW (1) | TWI434150B (enExample) |
| WO (1) | WO2008140076A1 (enExample) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102124414B (zh) * | 2009-04-17 | 2014-04-02 | 长瀬化成株式会社 | 光致抗蚀剂剥离剂组合物以及光致抗蚀剂剥离方法 |
| JP5890306B2 (ja) * | 2009-07-29 | 2016-03-22 | 東友ファインケム株式会社Ｄｏｎｇｗｏｏ Ｆｉｎｅ−Ｃｈｅｍ Ｃｏ．， Ｌｔｄ． | 洗浄液組成物及びこれを用いたパネルの洗浄方法 |
| JP5023128B2 (ja) * | 2009-10-07 | 2012-09-12 | 東京エレクトロン株式会社 | 塗布現像装置及び塗布現像方法 |
| JP5709075B2 (ja) * | 2010-09-10 | 2015-04-30 | ナガセケムテックス株式会社 | リン酸及び／又はリン酸塩の水溶液のパーティクル数経時安定化方法及びレジスト残渣剥離剤組成物 |
| KR101089211B1 (ko) * | 2010-12-02 | 2011-12-02 | 엘티씨 (주) | 1차 알칸올 아민을 포함하는 ｌｃｄ 제조용 포토레지스트 박리액 조성물 |
| JP5885046B1 (ja) * | 2015-03-24 | 2016-03-15 | パナソニックＩｐマネジメント株式会社 | レジスト剥離液 |
| CN111781808B (zh) * | 2015-09-16 | 2024-06-07 | 东友精细化工有限公司 | 抗蚀剂剥离液组合物、平板显示器基板及其制造方法 |
| WO2017065153A1 (ja) * | 2015-10-13 | 2017-04-20 | ナガセケムテックス株式会社 | フォトレジスト剥離液 |
| JP6160893B1 (ja) * | 2016-09-30 | 2017-07-12 | パナソニックＩｐマネジメント株式会社 | レジスト剥離液 |
| JP7176089B2 (ja) | 2018-07-20 | 2022-11-21 | インテグリス・インコーポレーテッド | 腐食防止剤を含む洗浄組成物 |
| KR102334425B1 (ko) * | 2019-11-21 | 2021-12-01 | 엘티씨 (주) | 디스플레이 제조용 포토레지스트 박리액 조성물 |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08262746A (ja) * | 1995-03-28 | 1996-10-11 | Mitsubishi Gas Chem Co Inc | フォトレジスト剥離剤組成物および剥離方法 |
| JP2001350276A (ja) * | 2000-06-05 | 2001-12-21 | Nagase Kasei Kogyo Kk | フォトレジスト剥離剤組成物及びその使用方法 |
| JP4692799B2 (ja) * | 2001-05-22 | 2011-06-01 | ナガセケムテックス株式会社 | レジスト剥離用組成物 |
| JP2004287288A (ja) * | 2003-03-24 | 2004-10-14 | Nagase Chemtex Corp | レジスト剥離用組成物及びレジスト剥離方法 |
| JP4628209B2 (ja) * | 2004-11-18 | 2011-02-09 | 花王株式会社 | 剥離剤組成物 |
| JP4692497B2 (ja) * | 2007-02-28 | 2011-06-01 | ナガセケムテックス株式会社 | フォトレジスト剥離剤組成物 |
-
2007
- 2007-05-15 JP JP2007129699A patent/JP4716225B2/ja active Active
-
2008
- 2008-05-05 TW TW097116444A patent/TWI434150B/zh active
- 2008-05-13 CN CN2008800160126A patent/CN101681129B/zh active Active
- 2008-05-13 KR KR1020097024223A patent/KR101420471B1/ko active Active
- 2008-05-13 WO PCT/JP2008/058750 patent/WO2008140076A1/ja not_active Ceased
Also Published As
| Publication number | Publication date |
|---|---|
| JP4716225B2 (ja) | 2011-07-06 |
| KR101420471B1 (ko) | 2014-07-16 |
| CN101681129A (zh) | 2010-03-24 |
| KR20100017192A (ko) | 2010-02-16 |
| WO2008140076A1 (ja) | 2008-11-20 |
| JP2008286881A (ja) | 2008-11-27 |
| CN101681129B (zh) | 2012-05-30 |
| TW200900884A (en) | 2009-01-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI434150B (zh) | 光阻剝離劑組成物 | |
| TWI546632B (zh) | A photoresist stripping agent composition, a sheet metal wiring substrate, and a method for manufacturing the same | |
| KR101668126B1 (ko) | 포토레지스트 박리제 조성물 및 포토레지스트 박리 방법 | |
| TWI261734B (en) | Photoresist removing solution and method for removing photoresist using same | |
| TW201533549A (zh) | 光阻剝離液 | |
| CN105676602A (zh) | 用于液晶显示器制造工艺的包含伯烷烃醇胺的光刻胶剥离组合物 | |
| TWI611276B (zh) | 光微影用剝離液及圖型形成方法 | |
| CN101750917A (zh) | 用于光致抗蚀剂的剥离剂组合物及剥离光致抗蚀剂的方法 | |
| JP2018523851A (ja) | フォトリソグラフィで使用されるフォトレジスト洗浄組成物及びそれを用いて基材を処理する方法 | |
| TW439013B (en) | Photoresist stripping composition | |
| TWI413874B (zh) | 光阻剝離劑組成物 | |
| KR20070003764A (ko) | 포토레지스트 박리용 조성물 및 박리방법 | |
| JP2000075506A (ja) | フォトレジスト用のストリッパ―組成物 | |
| CN101794087B (zh) | 用于光致抗蚀剂的剥离剂组合物及使用所述剥离剂组合物剥离光致抗蚀剂的方法 | |
| CN101981511A (zh) | 光致抗蚀剂剥离组合物及使用所述组合物剥离光致抗蚀剂的方法 | |
| TWI270749B (en) | Photoresist stripping liquid composition and a method of stripping photoresists using the same | |
| KR101213731B1 (ko) | 포토레지스트용 스트리퍼 조성물 | |
| TW546553B (en) | Photoresist stripping liquid composition and a method of stripping photoresists using the same | |
| JP2012514765A (ja) | フォトレジストストリッパー組成物及びこれを利用したフォトレジストの剥離方法 | |
| WO2002073319A1 (fr) | Composition de decapage de resine | |
| JP4229552B2 (ja) | ホトレジスト用剥離液組成物およびこれを用いたホトレジスト剥離方法 | |
| KR20030069266A (ko) | 레지스트 박리액 조성물 | |
| JP2015230333A (ja) | レジスト剥離剤及びそれを用いたレジスト剥離方法 | |
| TWI629576B (zh) | Photoresist stripper | |
| TWI228640B (en) | Photoresist remover composition |