CN101681129B - 光致抗蚀剂剥离剂组合物 - Google Patents

光致抗蚀剂剥离剂组合物 Download PDF

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Publication number
CN101681129B
CN101681129B CN2008800160126A CN200880016012A CN101681129B CN 101681129 B CN101681129 B CN 101681129B CN 2008800160126 A CN2008800160126 A CN 2008800160126A CN 200880016012 A CN200880016012 A CN 200880016012A CN 101681129 B CN101681129 B CN 101681129B
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CN
China
Prior art keywords
weight
amine
release agent
photoresist
sorbitol
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CN2008800160126A
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English (en)
Chinese (zh)
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CN101681129A (zh
Inventor
山边崇史
西嶋佳孝
安江秀国
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Nagase Chemtex Corp
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Nagase Chemtex Corp
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Publication of CN101681129A publication Critical patent/CN101681129A/zh
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
CN2008800160126A 2007-05-15 2008-05-13 光致抗蚀剂剥离剂组合物 Active CN101681129B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP129699/2007 2007-05-15
JP2007129699A JP4716225B2 (ja) 2007-05-15 2007-05-15 フォトレジスト剥離剤組成物
PCT/JP2008/058750 WO2008140076A1 (ja) 2007-05-15 2008-05-13 フォトレジスト剥離剤組成物

Publications (2)

Publication Number Publication Date
CN101681129A CN101681129A (zh) 2010-03-24
CN101681129B true CN101681129B (zh) 2012-05-30

Family

ID=40002266

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2008800160126A Active CN101681129B (zh) 2007-05-15 2008-05-13 光致抗蚀剂剥离剂组合物

Country Status (5)

Country Link
JP (1) JP4716225B2 (enExample)
KR (1) KR101420471B1 (enExample)
CN (1) CN101681129B (enExample)
TW (1) TWI434150B (enExample)
WO (1) WO2008140076A1 (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010119753A1 (ja) * 2009-04-17 2010-10-21 ナガセケムテックス株式会社 フォトレジスト剥離剤組成物及びフォトレジスト剥離方法
CN102639686B (zh) * 2009-07-29 2014-09-03 东友Fine-Chem股份有限公司 清洁组成物及使用该组成物清洁面板的方法
JP5023128B2 (ja) 2009-10-07 2012-09-12 東京エレクトロン株式会社 塗布現像装置及び塗布現像方法
JP5709075B2 (ja) * 2010-09-10 2015-04-30 ナガセケムテックス株式会社 リン酸及び／又はリン酸塩の水溶液のパーティクル数経時安定化方法及びレジスト残渣剥離剤組成物
KR101089211B1 (ko) * 2010-12-02 2011-12-02 엘티씨 (주) 1차 알칸올 아민을 포함하는 ｌｃｄ 제조용 포토레지스트 박리액 조성물
JP5885046B1 (ja) * 2015-03-24 2016-03-15 パナソニックＩｐマネジメント株式会社 レジスト剥離液
CN106547177A (zh) * 2015-09-16 2017-03-29 东友精细化工有限公司 抗蚀剂剥离液组合物、平板显示器基板及其制造方法
JPWO2017065153A1 (ja) * 2015-10-13 2018-07-26 ナガセケムテックス株式会社 フォトレジスト剥離液
CN107995960B (zh) * 2016-09-30 2019-03-12 松下知识产权经营株式会社 抗蚀剂剥离液
KR20210024187A (ko) 2018-07-20 2021-03-04 엔테그리스, 아이엔씨. 부식 억제제를 갖는 세정 조성물
KR102334425B1 (ko) * 2019-11-21 2021-12-01 엘티씨 (주) 디스플레이 제조용 포토레지스트 박리액 조성물

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08262746A (ja) * 1995-03-28 1996-10-11 Mitsubishi Gas Chem Co Inc フォトレジスト剥離剤組成物および剥離方法
JP2001350276A (ja) * 2000-06-05 2001-12-21 Nagase Kasei Kogyo Kk フォトレジスト剥離剤組成物及びその使用方法
JP4692799B2 (ja) * 2001-05-22 2011-06-01 ナガセケムテックス株式会社 レジスト剥離用組成物
JP2004287288A (ja) * 2003-03-24 2004-10-14 Nagase Chemtex Corp レジスト剥離用組成物及びレジスト剥離方法
JP4628209B2 (ja) * 2004-11-18 2011-02-09 花王株式会社 剥離剤組成物
JP4692497B2 (ja) * 2007-02-28 2011-06-01 ナガセケムテックス株式会社 フォトレジスト剥離剤組成物

Also Published As

Publication number Publication date
WO2008140076A1 (ja) 2008-11-20
JP4716225B2 (ja) 2011-07-06
KR101420471B1 (ko) 2014-07-16
CN101681129A (zh) 2010-03-24
TW200900884A (en) 2009-01-01
KR20100017192A (ko) 2010-02-16
TWI434150B (zh) 2014-04-11
JP2008286881A (ja) 2008-11-27

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C06 Publication
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SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
EE01 Entry into force of recordation of patent licensing contract

Application publication date: 20100324

Assignee: Wuxi Xicheng microelectronic material Co., Ltd.

Assignor: Nagase Chemtex Corp.

Contract record no.: 2017990000400

Denomination of invention: Photoresist remover composition

Granted publication date: 20120530

License type: Common License

Record date: 20171017

EE01 Entry into force of recordation of patent licensing contract
EE01 Entry into force of recordation of patent licensing contract

Application publication date: 20100324

Assignee: Mianyang Chenghong Microelectronic Materials Co., Ltd.

Assignor: Nagase Chemtex Corp.

Contract record no.: 2018990000177

Denomination of invention: Positive photosensitive resist release agent compositions

Granted publication date: 20120530

License type: Common License

Record date: 20180705

EE01 Entry into force of recordation of patent licensing contract